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    • 8. 发明授权
    • Cooling arrangement for semiconductor devices and method of making the
same
    • 用于半导体器件的冷却装置及其制造方法
    • US5133403A
    • 1992-07-28
    • US423386
    • 1989-10-19
    • Hitoshi YokonoTakao TerabayashiNobuo KayabaTakahiro DaikokuShigekazu KiedaFumiyuki KobayashiShizuo Zushi
    • Hitoshi YokonoTakao TerabayashiNobuo KayabaTakahiro DaikokuShigekazu KiedaFumiyuki KobayashiShizuo Zushi
    • H01L23/373H01L23/433H01L23/473H05K7/20
    • H01L23/4338H01L23/3733F28F2255/18H01L2224/16225
    • A cooling device for cooling semiconductor elements by removing heat generated from the semiconductor elements such as, for example, semiconductor integrated chips in a large-sized electronic computer. The cooling device is fashioned of a composite AlN-BN sintered material having a Vickers hardness not higher than one-fifth of that of an AlN material, and an anisotropic property of thermal conductivity in a two dimensional direction is higher than that of AlN which is isotropic in thermal conductivity. The cooling device may be mass-produced while nevertheless having a high transfer performance matching the quantity of heat generated for each semiconductor element even if the composite sintered material is uniform in shape and size. The composite sintered material is formed by a mixture of a hexagonal BN powder having an average particle diameter of not less than 1 .mu.m and an AlN powder having an average particle diameter of about 2 .mu.m, with a sintering aid being added and the powdery mixture being subjected to a hot press sintering whereby the sintered material is low in thermal conductivity in a direction parallel to an axis of a shaft of the hot press.
    • 一种用于通过从大型电子计算机中的诸如半导体集成芯片的半导体元件产生的热量来冷却半导体元件的冷却装置。 该冷却装置由维氏硬度不高于AlN材料的五分之一的复合AlN-BN烧结材料制成,并且二维方向的热导率的各向异性特性比AlN的各向异性高 各向同性的导热性。 即使复合烧结体的形状和尺寸一致,冷却装置也可以批量生产,同时具有与每个半导体元件产生的热量匹配的高转印性能。 复合烧结材料由平均粒径不小于1μm的六方晶BN粉末和平均粒径约2μm的AlN粉末的混合物形成,并加入烧结助剂。 混合物进行热压烧结,由此烧结材料在与热压机的轴的轴线平行的方向上的导热性低。
    • 10. 发明授权
    • Photosensitive resin composition and method for forming fine patterns
with said composition
    • 光敏树脂组合物和用所述组合物形成精细图案的方法
    • US4554237A
    • 1985-11-19
    • US452198
    • 1982-12-22
    • Fumio KataokaFusaji ShojiHitoshi YokonoDaisuke MakinoShigeru KoibuchiAsao Isobe
    • Fumio KataokaFusaji ShojiHitoshi YokonoDaisuke MakinoShigeru KoibuchiAsao Isobe
    • G03C1/72G03F7/008G03C1/52G03C1/60G03C5/16
    • G03F7/008Y10S430/128
    • Disclosed are photosensitive resin composition useful for formation of fine patterns on semiconductor devices, magnetic bubble devices, etc. which is highly sensitive and is excellent in developability and which has no problem such as precipitation of azide compounds and remaining azide particles after development and a method for forming fine patterns with said composition.Said photosensitive resin composition comprises (a) at least one polymer compound selected from the group consisting of a novolak resin and a polyhydroxystyrene resin and (b) an azide compound represented by the general formula (1): ##STR1## [wherein X is --N.sub.3 or --SO.sub.2 N.sub.3, Y is ##STR2## R.sup.1 is a lower alkylene such as --CH.sub.2 CH.sub.2 --, --CH.sub.2 CH.sub.2 CH.sub.2 --, or --CH.sub.2 CH.sub.2 OCH.sub.2 CH.sub.2 CH.sub.2 --, a hydroxyalkylene or an aminoalkylene such as ##STR3## (wherein R.sup.4 and R.sup.5 are lower alkyl or hydrogen, R.sup.6 -R.sup.8 are lower alkyl groups, R.sup.3 is hydrogen, a lower alkyl group or --CH.sub.2 CH.sub.2 O).sub.n R.sup.9 wherein n is an integer of 3 or less and R.sup.9 is hydrogen or a lower alkyl group)].
    • 公开了用于在半导体器件上形成精细图案的光敏树脂组合物,具有高度敏感性和显影性优异的并且没有问题,例如显影后的叠氮化合物和剩余的叠氮化物颗粒的沉淀,以及方法 用于用所述组合物形成精细图案。 所述光敏树脂组合物包含(a)至少一种选自酚醛清漆树脂和聚羟基苯乙烯树脂的聚合物化合物和(b)由通式(1)表示的叠氮化合物:其中 X是-N3或-SO2N3,Y是低级亚烷基,例如-CH2CH2-,-CH2CH2CH2-或-CH2CH2OCH2CH2CH2-,羟基亚烷基或氨基亚烷基,例如