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1. 发明授权

US08118347B2 Structure of mounting impact absorption material for use with vehicle 有权
标题翻译：用于车辆的安装冲击吸收材料的结构
公开(公告)号：US08118347B2
公开(公告)日：2012-02-21
申请号：US12791932
申请日：2010-06-02
申请人： Akihiro Kawashima , Masami Uratsu , Michinori Kawasumi , Eiji Fujii , Tomonari Masuda , Tadashi Nishimura , Mariko Wada , Mamoru Yamaguchi , Kenichi Uemori
发明人： Akihiro Kawashima , Masami Uratsu , Michinori Kawasumi , Eiji Fujii , Tomonari Masuda , Tadashi Nishimura , Mariko Wada , Mamoru Yamaguchi , Kenichi Uemori
IPC分类号： B60J7/00
CPC分类号： B60R21/04 , B60R21/0428 , B60R2021/0421
摘要： An aspect in accordance with the present invention is a structure of mounting an impact absorption material for use with a vehicle. The structure includes: a door trim 30, a holder, and an EA pad. The holder includes a base and a plurality of legs, the base of the holder being disposed on the compartment outer side surface of the EA pad. The plurality of legs are disposed at intervals around an outer peripheral edge of the base of the holder and extend from the base of the holder, along an outer peripheral side surface of the EA pad, and to the door trim, thereby fixing the base of the holder to the door trim.
摘要翻译：根据本发明的一个方面是安装用于车辆的冲击吸收材料的结构。该结构包括：门装饰件30，保持器和EA垫。保持器包括基部和多个腿，保持器的基部设置在EA垫的隔室外侧表面上。多个支腿围绕保持器的基部的外周边缘间隔设置，并且沿着EA垫的外周侧表面从保持器的基部延伸到门装饰件，从而将持有人到门饰。

2. 发明申请

US20100308621A1 STRUCTURE OF MOUNTING IMPACT ABSORPTION MATERIAL FOR USE WITH VEHICLE 有权
标题翻译：安装冲击吸收材料的结构与车辆的使用
公开(公告)号：US20100308621A1
公开(公告)日：2010-12-09
申请号：US12791932
申请日：2010-06-02
申请人： Akihiro Kawashima , Masami Uratsu , Michinori Kawasumi , Eiji Fujii , Tomonari Masuda , Tadashi Nishimura , Mariko Wada , Mamoru Yamaguchi , Kenichi Uemori
发明人： Akihiro Kawashima , Masami Uratsu , Michinori Kawasumi , Eiji Fujii , Tomonari Masuda , Tadashi Nishimura , Mariko Wada , Mamoru Yamaguchi , Kenichi Uemori
IPC分类号： B62D25/00
CPC分类号： B60R21/04 , B60R21/0428 , B60R2021/0421
摘要： An aspect in accordance with the present invention is a structure of mounting an impact absorption material for use with a vehicle. The structure includes: a door trim 30, a holder, and an EA pad. The holder includes a base and a plurality of legs, the base of the holder being disposed on the compartment outer side surface of the EA pad. The plurality of legs are disposed at intervals around an outer peripheral edge of the base of the holder and extend from the base of the holder, along an outer peripheral side surface of the EA pad, and to the door trim, thereby fixing the base of the holder to the door trim.
摘要翻译：根据本发明的一个方面是安装用于车辆的冲击吸收材料的结构。该结构包括：门装饰件30，保持器和EA垫。保持器包括基部和多个腿，保持器的基部设置在EA垫的隔室外侧表面上。多个支腿围绕保持器的基部的外周边缘间隔设置，并且沿着EA垫的外周侧表面从保持器的基部延伸到门装饰件，从而将持有人到门饰。

3. 发明授权

US06351014B2 Semiconductor device having different field oxide sizes 有权
标题翻译：具有不同场氧化物尺寸的半导体器件
公开(公告)号：US06351014B2
公开(公告)日：2002-02-26
申请号：US09519598
申请日：2000-03-06
申请人： Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
发明人： Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
IPC分类号： H01L2701
CPC分类号： H01L21/8238 , H01L21/84 , H01L23/4825 , H01L27/0921 , H01L27/1203 , H01L29/78609 , H01L29/78612 , H01L29/78615 , H01L29/78621 , H01L29/78645 , H01L29/78654 , H01L2924/0002 , H01L2924/00
摘要： According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.
摘要翻译：根据本发明的半导体器件，形成场致氧化膜以覆盖SOI层的主表面并到达掩埋氧化膜的主表面。结果，可以完全电隔离SOI的pMOS有源区和SOI的nMOS有源区。因此，可以完全防止闭锁。结果，可以提供使用SOI衬底的半导体器件，该SOI衬底可以通过消除源极和漏极之间的击穿电压的降低来实现高集成度，这是常规SOI场效应晶体管的问题，以及有效地设置妨碍高集成度的身体接触区域及其制造方法。

4. 发明授权

US06319805B1 Semiconductor device having metal silicide film and manufacturing method thereof 失效
标题翻译：具有金属硅化物膜的半导体器件及其制造方法
公开(公告)号：US06319805B1
公开(公告)日：2001-11-20
申请号：US09499733
申请日：2000-02-08
申请人： Toshiaki Iwamatsu , Yasuo Inoue , Yasuo Yamaguchi , Tadashi Nishimura
发明人： Toshiaki Iwamatsu , Yasuo Inoue , Yasuo Yamaguchi , Tadashi Nishimura
IPC分类号： H01L213205
CPC分类号： H01L21/26506 , H01L21/26586 , H01L21/84 , H01L27/1203 , H01L29/41783 , H01L29/458 , H01L29/66507 , H01L29/66659 , H01L29/66772 , H01L29/78621
摘要： A semiconductor device in which parasitic resistance of source/drain regions can be reduced than the parasitic resistance of the drain region, and manufacturing method thereof, can be obtained. In the semiconductor device, inactivating ions are implanted only to the source region of the semiconductor layer, so as to damage the crystal near the surface of the semiconductor layer, whereby siliciding reaction is promoted. Therefore, in the source region, a titanium silicide film which is thicker can be formed.
摘要翻译：可以获得其中源极/漏极区域的寄生电阻可以比漏极区域的寄生电阻降低的半导体器件及其制造方法。在半导体装置中，仅将钝化离子注入到半导体层的源极区域，以损坏半导体层的表面附近的晶体，从而促进了硅化反应。因此，在源极区域中，可以形成更厚的硅化钛膜。

5. 发明授权

US5619053A Semiconductor device having an SOI structure 失效
标题翻译：具有SOI结构的半导体器件
公开(公告)号：US5619053A
公开(公告)日：1997-04-08
申请号：US454816
申请日：1995-05-31
申请人： Toshiaki Iwamatsu , Yasuo Inoue , Tadashi Nishimura
发明人： Toshiaki Iwamatsu , Yasuo Inoue , Tadashi Nishimura
IPC分类号： H01L27/12 , H01L27/01
CPC分类号： H01L27/1203
摘要： Generation of parasitic transistor in active layer edge is prevented, in an NMOS region of a semiconductor layer (21) on an insulating film (20), boron ions are implanted by rotary oblique injection, using a nitride film (23) and a resist (253a) as mask. In the vicinity of a region for separating element by LOCOS method, that is, only in the edge region of the semiconductor layer (21) as the active layer of NMOS transistor, boron ions are implanted by about 3.times.10.sup.13 /cm.sup.2. After LOCOS oxidation, the impurity concentration is heightened to such a level as the boron ions may not be sucked up into the oxide film.
摘要翻译：在绝缘膜（20）上的半导体层（21）的NMOS区域中，通过旋转斜射注入硼离子，使用氮化物膜（23）和抗蚀剂（...）来防止在有源层边缘中产生寄生晶体管 253a）作为掩模。在通过LOCOS方法分离元件的区域附近，即仅在作为NMOS晶体管的有源层的半导体层（21）的边缘区域中，硼离子注入约3×10 13 / cm 2。在LOCOS氧化之后，杂质浓度提高到这样的水平，因为硼离子不能被吸入氧化膜中。

6. 发明授权

US5371381A Process for producing single crystal semiconductor layer and semiconductor device produced by said process 失效
标题翻译：通过所述方法制造单晶半导体层和半导体器件的制造方法
公开(公告)号：US5371381A
公开(公告)日：1994-12-06
申请号：US587500
申请日：1990-09-24
申请人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
发明人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
IPC分类号： H01L21/20 , H01L21/268 , H01L21/822 , H01L29/04 , H01L27/04
CPC分类号： H01L21/8221 , H01L21/2026 , H01L21/268 , H01L29/045 , Y10S117/904 , Y10S148/09 , Y10S148/091 , Y10S148/093
摘要： Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising stripes of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film to melt the polycrystalline or amorphous semiconductor and scanning the energy beam in a predetermined direction such that the direction of the crystal of the semiconductor re-solidified and converted into a single crystal accords with a {111} plane, to produce the single crystal of the semiconductor device. Also disclosed is a semiconductor device produced by the method, which comprises a single crystal layer having a wide range of a crystal in a predetermined direction relative to the facial orientation of the major surface of the substrate, and has a three-dimensional semiconductor circuit element construction.
摘要翻译：本发明公开了一种制造半导体器件的单晶层的方法，其包括以下步骤：在立方晶系的单晶半导体衬底的主表面上提供由用于接种的开口部分开的氧化物绝缘体层，提供在包括开口部分的绝缘体层的整个表面上的多晶或非晶半导体层，然后提供保护层，该保护层至少包括反射膜或防反射膜，该反射膜或防反射膜包含预定宽度的条，相对于开口部分并且以预定间隔，保护层能够控制对应于条纹的部分或不对应于条纹的部分的半导体层中的温度分布，从而完成用于制造半导体器件的基底，之后，通过条纹反射照射能量束 e或抗反射膜，以熔化多晶或非晶半导体并沿预定方向扫描能量束，使得半导体晶体的方向重新固化并转换成单晶符合{111}面，至产生半导体器件的单晶。还公开了一种通过该方法制造的半导体器件，该半导体器件包括相对于衬底的主表面的面取向在预定方向上具有宽范围的晶体的单晶层，并且具有三维半导体电路元件施工。

7. 发明授权

US5357365A Laser beam irradiating apparatus enabling uniform laser annealing 失效
标题翻译：激光束照射装置实现均匀的激光退火
公开(公告)号：US5357365A
公开(公告)日：1994-10-18
申请号：US62631
申请日：1993-05-18
申请人： Takashi Ipposhi , Tadashi Nishimura
发明人： Takashi Ipposhi , Tadashi Nishimura
IPC分类号： B01J19/12 , B23K26/06 , B23K26/08 , C30B1/08 , H01L21/268 , H01S3/101 , G02B26/08 , H01L21/477
CPC分类号： B23K26/08 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/082 , Y10S117/904 , Y10S359/90
摘要： A laser beam irradiating apparatus is capable of laser annealing with high precision and uniform over the entire surface of a sample. Luminous flux of the laser beam output from a laser source is expanded by a beam expander. The power of the laser beam which has passed through the beam expander is adjusted by a half-wave plate of synthetic quarts and a polarizing prism of synthetic quarts. The laser beam emitted from polarizing prism is guided to a prescribed position by mirrors, and swung in the direction of the X-axis by an X-axis rotation mirror. The laser beam reflected from X-axis rotation mirror has its diameter reduced by a f-.theta. lens to have a prescribed beam spot diameter on the surface of a silicon wafer, and laser beam scanning is carried out at a constant speed. Since half-wave plate and the polarizing prism are formed of synthetic quarts, thermal deformation of optical components caused by continuous irradiation of laser beam can be suppressed, beam profile of the laser beam can be stabilized, therefore highly uniform and highly precise laser annealing becomes possible.
摘要翻译：激光束照射装置能够在样品的整个表面上以高精度和均匀的激光退火。从激光源输出的激光束的光通量由光束扩展器扩展。已经通过扩束器的激光束的功率由合成夸脱的半波片和合成夸脱的偏振棱镜调节。从偏振棱镜发射的激光束被反射镜引导到规定位置，并通过X轴旋转镜在X轴的方向上摆动。从X轴旋转镜反射的激光束的直径通过f-θ透镜减小，以在硅晶片的表面上具有规定的光束点直径，并且以恒定的速度执行激光束扫描。由于半波片和偏光棱镜由合成石英形成，可以抑制由激光束的连续照射引起的光学部件的热变形，激光束的光束轮廓可以稳定，因此高度均匀且高精度的激光退火成为可能。

8. 发明授权

US4993835A Apparatus for detecting three-dimensional configuration of object employing optical cutting method 失效
标题翻译：使用光学切割方法检测物体的三维构型的装置
公开(公告)号：US4993835A
公开(公告)日：1991-02-19
申请号：US424979
申请日：1989-10-23
申请人： Yasuo Inoue , Tadashi Nishimura
发明人： Yasuo Inoue , Tadashi Nishimura
IPC分类号： G01B11/24 , G01B11/25
CPC分类号： G01B11/25
摘要： Disclosed is an apparatus for detecting the three-dimensional configuration of an object employing an optical cutting method. A light projector pulse-flashes slit-shaped light and causes the light to scan an object at a predetermined speed. An image sensor having a plurality of pixels is disposed in opposition to the object. An optical system forms on the image sensor an image of an optical cutting line formed on the surface of the object by the light. A difference detector detects the difference between the on- and off- levels of each of pulses of the image detected by the pixels of the sensor. A time calculator calculates the time at which the image has passed each of the pixels, on the basis of the difference detected by the difference detector. A configuration calculator calculates the three-dimensional configuration of the object on the basis of the calculated passage time and the scanning speed of the slit-shaped light. Since the difference between the levels of each pulse of the image is obtained, any optical signals resulting from a factor other than the pertinent pulses, such as influence by the background of the object, or a flash can be excluded, and the configuration can be detected with a high level of precision.
摘要翻译：公开了一种使用光学切割方法检测物体的三维构造的装置。光投射器脉冲闪烁狭缝状光，并使光以预定速度扫描物体。具有多个像素的图像传感器设置成与物体相对。光学系统在图像传感器上形成通过光形成在物体表面上的光学切割线的图像。差分检测器检测由传感器的像素检测的图像的每个脉冲的开和关电平之间的差异。时间计算器基于由差分检测器检测到的差异来计算图像已经通过每个像素的时间。配置计算器基于所计算的通过时间和狭缝状光的扫描速度来计算物体的三维配置。由于获得图像的每个脉冲的电平之间的差异，所以可以排除由诸如对象的背景或闪光的相关脉冲之外的因素产生的任何光信号，并且可以将配置以高精度检测。

9. 发明授权

US4822751A Method of producing a thin film semiconductor device 失效
标题翻译：薄膜半导体器件的制造方法
公开(公告)号：US4822751A
公开(公告)日：1989-04-18
申请号：US30904
申请日：1987-03-31
申请人： Akira Ishizu , Tadashi Nishimura , Yasuo Inoue
发明人： Akira Ishizu , Tadashi Nishimura , Yasuo Inoue
IPC分类号： H01L27/12 , H01L21/20 , H01L21/205 , H01L21/263 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/268
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02491 , H01L21/02532 , H01L21/02639 , H01L27/1214 , H01L29/66757 , H01L29/78633 , Y10S148/091 , Y10S148/093
摘要： A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer, which is self-aligned to the pattern of the metal thin film, by laser CVD.
摘要翻译：通过准备基板来形成薄膜半导体器件，在基板上形成金属薄膜图案，在金属薄膜上形成绝缘层，并形成自对准的半导体薄膜有源层的图案通过激光CVD到金属薄膜的图案。

10. 发明授权

US4787740A Apparatus and method for determining crystal orientation 失效
标题翻译：用于确定晶体取向的装置和方法
公开(公告)号：US4787740A
公开(公告)日：1988-11-29
申请号：US11329
申请日：1987-02-05
申请人： Yasuo Inoue , Tadashi Nishimura , Kazuyuki Sugahara , Shigeru Kusunoki
发明人： Yasuo Inoue , Tadashi Nishimura , Kazuyuki Sugahara , Shigeru Kusunoki
IPC分类号： H01L21/66 , G01N21/00 , G01N21/21 , G01N21/65 , G01N21/84
CPC分类号： G01N21/65 , G01N2021/656 , G01N2021/8477 , G01N21/21 , G01N21/658
摘要： An apparatus for determining crystal orientation comprises: a polarizer for polarizing an incident light beam; a polarization analyzer for selecting light having a selected polarization direction in Raman scattered light; and a synchronizer for enabling synchronous rotations of the polarizer and the polarization analyzer.
摘要翻译：一种用于确定晶体取向的装置包括：用于偏振入射光束的偏振器; 偏振分析器，用于选择拉曼散射光中具有所选偏振方向的光; 以及用于实现偏振器和偏振分析器的同步旋转的同步器。

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