会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Method and apparatus for controlling the diameter of a silicon single
crystal
    • 用于控制硅单晶直径的方法和装置
    • US5246535A
    • 1993-09-21
    • US936071
    • 1992-08-26
    • Akihiro KawashimaTatsuo SatoToshio Okawa
    • Akihiro KawashimaTatsuo SatoToshio Okawa
    • G01B11/08
    • G01B11/08
    • A method of controlling the diameter of a silicon single crystal. In the course of manufacturing a silicon single crystal by pulling the silicon single crystal while rotating it relative to a crucible, a comparison between a measured diameter value of the pulled single crystal measured by optical means and a desired diameter value is made to determine a deviation so that the resulting deviation is subjected to an incomplete differential PID processing or the Smith method processing to calculate a pull rate and the pull rate is applied to a motor controller of a crystal pulling apparatus thereby performing the diameter control of the pulled single crystal through the manipulation of the pull rate. An apparatus for controlling the diameter of a silicon single crystal includes input means for receiving a measured diameter value of a pulled single crystal measured by optical means, incomplete differential PID computing means for making a comparison between a measured diameter value of the pulled single crystal and a desired diameter value a plurality of times at intervals of a unit rotational period to calculate a pull rate, and output means for applying the pull rate to a motor controller of a crystal pulling apparatus.
    • 一种控制硅单晶直径的方法。 在通过在相对于坩埚旋转的同时拉动硅单晶而制造硅单晶的过程中,通过光学装置测量的拉伸单晶的测量直径值与期望的直径值进行比较,以确定偏差 使得所得到的偏差受到不完全差分PID处理或史密斯方法处理以计算拉动率,并且拉伸速率被施加到晶体拉制装置的电动机控制器,由此通过所述拉伸单晶的直径控制 操纵拉力。 一种用于控制硅单晶直径的装置包括:输入装置,用于接收通过光学装置测量的拉伸单晶的测量直径值;不完全差分PID计算装置,用于比较被测单体的测量直径值与 以单位旋转周期的间隔多次进行期望的直径值,以计算牵引速度;以及输出装置,用于将牵引速率施加到晶体牵引装置的电动机控制器。