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1. 发明授权

US09041097B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09041097B2
公开(公告)日：2015-05-26
申请号：US13849344
申请日：2013-03-22
申请人： Shigeru Kusunoki
发明人： Shigeru Kusunoki
IPC分类号： H01L29/66 , H01L29/16 , H01L29/423 , H01L29/739 , H01L29/49
CPC分类号： H01L29/66666 , H01L29/1602 , H01L29/1608 , H01L29/4232 , H01L29/4916 , H01L29/7397
摘要： A semiconductor device includes a channel layer formed on a substrate, an insulating layer formed in contact with the channel layer, an impurity-doped first semiconductor layer formed on an opposite side of the insulating layer from the channel layer, an impurity-doped second semiconductor layer formed on an opposite side of the first semiconductor layer from the insulating layer, and a gate electrode formed on an opposite side of the second semiconductor layer from the first semiconductor layer. A quotient of an impurity density of the first semiconductor layer divided by a relative permittivity of the first semiconductor layer is greater than a quotient of an impurity density of the second semiconductor layer divided by a relative permittivity of the second semiconductor layer.
摘要翻译：半导体器件包括形成在衬底上的沟道层，与沟道层接触形成的绝缘层，形成在绝缘层与沟道层相反的一侧的杂质掺杂的第一半导体层，杂质掺杂的第二半导体在第一半导体层的与绝缘层相反的一侧形成的层，以及形成在第二半导体层与第一半导体层相反的一侧上的栅电极。第一半导体层的杂质浓度除以第一半导体层的相对介电常数的商大于第二半导体层的杂质浓度除以第二半导体层的相对介电常数的商。

2. 发明授权

US08853737B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08853737B2
公开(公告)日：2014-10-07
申请号：US13493745
申请日：2012-06-11
申请人： Shigeru Kusunoki
发明人： Shigeru Kusunoki
IPC分类号： H01L29/739 , H01L27/088 , H01L29/78 , H01L29/40 , H01L49/02 , H01L29/06 , H01L27/092 , H01L21/8238 , H03K17/08
CPC分类号： H01L29/7396 , H01L21/823814 , H01L21/823878 , H01L27/0921 , H01L28/20 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/404 , H01L29/405 , H01L29/407 , H01L29/7397 , H01L29/7817 , H01L29/7824 , H01L2924/0002 , H03K17/08 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto.
摘要翻译：半导体器件包括半导体衬底，其包括半导体层，形成在半导体衬底中的功率器件，形成在半导体衬底中并围绕功率器件的多个同心保护环;以及电压施加装置，用于分别向多个同心保护环，最外面的同心保护环具有施加到其上的最高电压。

3. 发明授权

US08847290B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08847290B2
公开(公告)日：2014-09-30
申请号：US13729584
申请日：2012-12-28
申请人： Shigeru Kusunoki , Shinichi Ishizawa
发明人： Shigeru Kusunoki , Shinichi Ishizawa
IPC分类号： H01L29/66 , H01L27/06
CPC分类号： H01L27/0629
摘要： A semiconductor device includes: a rectifying element; an electrode pad electrically connected to the rectifying element; and a resistance and a depletion transistor arranged between the rectifying element and the electrode pad, and electrically connected to each other. The semiconductor device has a configuration in which the rectifying element, the resistance, the depletion transistor, and the electrode pad are serially connected. The semiconductor device is configured to generate a gate potential of the depletion transistor based on a difference in potential across the resistance and to produce a depletion layer in a channel of the depletion transistor based on the gate potential. As a result, a semiconductor device having reasonably large current at low voltage and small current at high voltage can be obtained.
摘要翻译：半导体器件包括：整流元件; 电连接到整流元件的电极垫; 以及布置在整流元件和电极焊盘之间的电阻和耗尽晶体管，并且彼此电连接。半导体器件具有其中整流元件，电阻，耗尽晶体管和电极焊盘串联连接的结构。半导体器件被配置为基于跨越电阻的电位差产生耗尽型晶体管的栅极电位，并且基于栅极电位在耗尽型晶体管的沟道中产生耗尽层。结果，可以获得在低电压下具有相当大的电流并且在高电压下具有小的电流的半导体器件。

4. 发明申请

US20140077291A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140077291A1
公开(公告)日：2014-03-20
申请号：US13849344
申请日：2013-03-22
申请人： Shigeru KUSUNOKI
发明人： Shigeru KUSUNOKI
IPC分类号： H01L29/66 , H01L29/16
CPC分类号： H01L29/66666 , H01L29/1602 , H01L29/1608 , H01L29/4232 , H01L29/4916 , H01L29/7397
摘要： A semiconductor device includes a channel layer formed on a substrate, an insulating layer formed in contact with the channel layer, an impurity-doped first semiconductor layer formed on an opposite side of the insulating layer from the channel layer, an impurity-doped second semiconductor layer formed on an opposite side of the first semiconductor layer from the insulating layer, and a gate electrode formed on an opposite side of the second semiconductor layer from the first semiconductor layer. A quotient of an impurity density of the first semiconductor layer divided by a relative permittivity of the first semiconductor layer is greater than a quotient of an impurity density of the second semiconductor layer divided by a relative permittivity of the second semiconductor layer.
摘要翻译：半导体器件包括形成在衬底上的沟道层，与沟道层接触形成的绝缘层，形成在绝缘层与沟道层相反的一侧的杂质掺杂的第一半导体层，杂质掺杂的第二半导体在第一半导体层的与绝缘层相反的一侧形成的层，以及形成在第二半导体层与第一半导体层相反的一侧上的栅电极。第一半导体层的杂质浓度除以第一半导体层的相对介电常数的商大于第二半导体层的杂质浓度除以第二半导体层的相对介电常数的商。

5. 发明申请

US20110140165A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE 有权
标题翻译：高电压半导体器件
公开(公告)号：US20110140165A1
公开(公告)日：2011-06-16
申请号：US12899758
申请日：2010-10-07
申请人： Shigeru KUSUNOKI , Junji Yahiro , Yoshihiko Hirota
发明人： Shigeru KUSUNOKI , Junji Yahiro , Yoshihiko Hirota
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L24/06 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/0658 , H01L27/0761 , H01L29/0623 , H01L29/0661 , H01L29/404 , H01L29/8611 , H01L2224/0603 , H01L2224/48091 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2224/45099 , H01L2924/00
摘要： A high voltage semiconductor device includes a semiconductor substrate, a p type base region in a first main surface, an n+ type emitter region in the p type base region, an n+ type cathode region adjacent to an end surface of the semiconductor substrate and not penetrating the semiconductor substrate, a p+ type collector region in a second main surface, a first main electrode, a second main electrode, a third main electrode, and a connection portion connecting the second main electrode and the third main electrode. A resistance between the p type base region and the n+ type cathode region is greater than a resistance between the p type base region and the p+ type collector region. In the high voltage semiconductor device in which an IGBT and a free wheel diode are formed in a single semiconductor substrate, occurrence of a snap-back phenomenon is suppressed.
摘要翻译：高电压半导体器件包括半导体衬底，第一主表面中的ap型基极区域，p型基极区域中的n +型发射极区域，与半导体衬底的端面相邻的n +型阴极区域，并且不穿透半导体衬底，第二主表面中的p +型集电极区域，第一主电极，第二主电极，第三主电极和连接第二主电极和第三主电极的连接部分。 p型基极区域和n +型阴极区域之间的电阻大于p型基极区域和p +型集电极区域之间的电阻。在单个半导体基板中形成有IGBT和自由轮二极管的高电压半导体装置中，抑制了卡扣现象的发生。

6. 发明申请

US20100038707A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100038707A1
公开(公告)日：2010-02-18
申请号：US12580303
申请日：2009-10-16
申请人： Norifumi TOKUDA , Shigeru KUSUNOKI
发明人： Norifumi TOKUDA , Shigeru KUSUNOKI
IPC分类号： H01L29/78
CPC分类号： H01L29/0657 , H01L29/0834 , H01L29/32 , H01L29/47 , H01L29/66348 , H01L29/7397 , H01L29/872 , H01L2924/10155 , H01L2924/10158
摘要： A semiconductor device including: a semiconductor substrate; a first main electrode provided on a first main surface of said semiconductor substrate; a second main electrode provided on a second main surface of said semiconductor substrate, wherein a main current flows in a thickness direction of said semiconductor substrate; a trench that extends from the first main surface of said semiconductor substrate towards the second main surface; a gate insulating film covering an inner surface of said trench; and a gate electrode buried in said trench and surrounded by said gate insulating film.
摘要翻译：一种半导体器件，包括：半导体衬底; 设置在所述半导体衬底的第一主表面上的第一主电极; 设置在所述半导体衬底的第二主表面上的第二主电极，其中主电流在所述半导体衬底的厚度方向上流动; 从所述半导体衬底的第一主表面朝向所述第二主表面延伸的沟槽; 覆盖所述沟槽的内表面的栅极绝缘膜; 以及掩埋在所述沟槽中并被所述栅绝缘膜包围的栅电极。

7. 发明授权

US07504707B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US07504707B2
公开(公告)日：2009-03-17
申请号：US10515346
申请日：2003-06-05
申请人： Norifumi Tokuda , Shigeru Kusunoki
发明人： Norifumi Tokuda , Shigeru Kusunoki
IPC分类号： H01L23/58
CPC分类号： H01L29/0696 , H01L29/0649 , H01L29/0834 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.

8. 发明申请

US20090068815A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090068815A1
公开(公告)日：2009-03-12
申请号：US12271544
申请日：2008-11-14
申请人： Norifumi Tokuda , Shigeru Kusunoki
发明人： Norifumi Tokuda , Shigeru Kusunoki
IPC分类号： H01L21/762
CPC分类号： H01L29/0696 , H01L29/0649 , H01L29/0834 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.
摘要翻译：主电流沿半导体衬底的厚度方向流动的半导体器件，以获得所需的电特性。 P型半导体区域和N型半导体区域在半导体衬底的第二主表面的表面中的两个区域之间交替设置有间隔。在P型半导体区域和N型半导体区域之间，形成在半导体衬底的表面中的沟槽用绝缘体填充，从而形成沟槽隔离结构。此外，第二主电极形成为与P型半导体区域和N型半导体区域接触。

9. 发明授权

US07250345B2 Insulated gate transistor 有权
标题翻译：绝缘栅晶体管
公开(公告)号：US07250345B2
公开(公告)日：2007-07-31
申请号：US10976855
申请日：2004-11-01
申请人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
发明人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/456 , H01L29/495 , H01L29/4958 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 μm and no greater than 250 μm and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
摘要翻译：本发明的半导体器件具有电源装置，该功率器件具有：具有彼此相对的第一主表面和第二主表面的半导体衬底，以及在第一主表面侧的绝缘栅极结构，其中主电流在第一主表面和第二主表面之间流动，即具有绝缘栅型MOS晶体管结构，其中半导体衬底的厚度（t 1> 1）不小于50 在第一主表面上实施了不超过250个妈妈的低导通电压和高耐破坏能力。因此，可以实现低导通电压，耐击穿能力的保持和高压侧的开关损耗的降低。

10. 发明申请

US20050280029A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050280029A1
公开(公告)日：2005-12-22
申请号：US11204048
申请日：2005-08-16
申请人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
发明人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
IPC分类号： H01L29/06 , H01L29/40 , H01L29/417 , H01L29/45 , H01L29/739 , H01L31/0328
CPC分类号： H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/456 , H01L29/7395 , H01L29/7397
摘要： A semiconductor device of the present invention has an insulating gate type field effect transistor portion having an n-type emitter region (3) and an n− silicon substrate (1), which are opposed to each other sandwiching a p-type body region (2), as well as a gate electrode (5a) which is opposed to p-type body region (2) sandwiching a gate insulating film (4a), and also has a stabilizing plate (5b). This stabilizing plate (5b) is made of a conductor or a semiconductor, is opposed to n− silicon substrate (1) sandwiching an insulating film (4, 4b) for a plate, and forms together with n− silicon substrate (1), a capacitor. This stabilizing plate capacitor formed between stabilizing plate (5b) and n− silicon substrate (1) has a capacitance greater than that of the gate-drain capacitor formed between gate electrode (5a) and n− silicon substrate (1).
摘要翻译：本发明的半导体器件具有绝缘栅型场效应晶体管部分，其具有n型发射极区域（3）和n +硅衬底（1），它们彼此相对夹入 p型体区域（2）以及与栅极绝缘膜（4a）夹持的p型体区域（2）相对的栅电极（5a），还具有稳定板（5） b）。该稳定板（5b）由导体或半导体制成，与夹在板上的绝缘膜（4,4b）夹在一起的n +硅衬底（1）相对，并形成在一起与硅衬底（1），电容器。形成在稳定板（5b）和硅衬底（1）之间的稳定板电容器的电容大于在栅电极（5a）和n < 硅衬底（1）。

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