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1. 外观设计

USD302828S Ink ribbon cassette for electronic typewriter 失效
公开(公告)号：USD302828S
公开(公告)日：1989-08-15
申请号：US43295
申请日：1987-04-28
申请人： Aiko Endo , Yasuo Ohba
设计人： Aiko Endo , Yasuo Ohba

2. 发明公开

US20240034580A1 SHEET PROCESSING APPARATUS, IMAGE FORMING APPARATUS, AND IMAGE FORMING SYSTEM 审中-公开
公开(公告)号：US20240034580A1
公开(公告)日：2024-02-01
申请号：US18356639
申请日：2023-07-21
申请人： Yusuke Tanaka , Kentaroh Fukami , Shigeyuki Itoh , Atsushi Kuriyama , Yuuki Nakagawa , Yiru Chen , Ken Sawada , Takuya Fukuhara , Ryoh Suzuki , Yasuo Ohba , Akikazu Iwata
发明人： Yusuke Tanaka , Kentaroh Fukami , Shigeyuki Itoh , Atsushi Kuriyama , Yuuki Nakagawa , Yiru Chen , Ken Sawada , Takuya Fukuhara , Ryoh Suzuki , Yasuo Ohba , Akikazu Iwata
IPC分类号： B65H5/06
CPC分类号： B65H5/062 , B65H2404/6111 , B65H2403/94 , B65H2402/44 , B65H2801/03 , B65H2801/24
摘要： A sheet processing apparatus includes a first guide plate and a second guide plate facing with a given space in a thickness direction and having second and third openings, a sheet conveyance passage between the first and second guide plates, and a sheet conveyor including a drive source, a drive roller, a first driven roller, and a second driven roller. The drive roller protrudes from the first guide plate toward the sheet conveyance passage through the first opening. The first driven roller faces the drive roller and protrudes from the second guide plate toward the sheet conveyance passage through the second opening. The second driven roller protrudes from the second guide plate toward the sheet conveyance passage through the third opening. The second driven roller is disposed at a position shifted from the drive roller in a width direction orthogonal to the sheet conveyance direction and the thickness direction.

3. 发明公开

US20230348223A1 SHEET PROCESSING APPARATUS, IMAGE FORMING APPARATUS, AND IMAGE FORMING SYSTEM 审中-公开
公开(公告)号：US20230348223A1
公开(公告)日：2023-11-02
申请号：US18304590
申请日：2023-04-21
申请人： Takuya Fukuhara , Ken Sawada , Ryoh Suzuki , Kentaroh Fukami , Atsushi Kuriyama , Yusuke Tanaka , Yuuki Nakagawa , Yasuo Ohba , Akikazu Iwata
发明人： Takuya Fukuhara , Ken Sawada , Ryoh Suzuki , Kentaroh Fukami , Atsushi Kuriyama , Yusuke Tanaka , Yuuki Nakagawa , Yasuo Ohba , Akikazu Iwata
IPC分类号： B65H39/06
CPC分类号： B65H39/06 , B65H2513/10 , B65H2513/51
摘要： A sheet processing apparatus includes a sheet conveyance passage, a sheet circulation passage, a first conveyor, a second conveyor, a third conveyor, and circuitry. In the sheet circulation passage, a sheet is circulated to be overlaid with a following sheet in the sheet conveyance passage. The circuitry circulates the sheet in the sheet circulation passage to overlay the sheet with the following sheet conveyed after the sheet in the first sheet conveyance passage, at an upstream position of the first sheet conveyance passage, and adjusts a sheet conveyance speed of the third conveyor to circulate the sheet, based on a reduction amount that is obtained when a preceding amount of a leading end of the following sheet with respect to a leading end of the sheet is reduced while the following sheet is temporarily stopped due to a temporary stop of the first conveyor.

4. 发明授权

US08963177B2 Semiconductor light emitting element and semiconductor light emitting device 有权
标题翻译：半导体发光元件及半导体发光元件
公开(公告)号：US08963177B2
公开(公告)日：2015-02-24
申请号：US12718492
申请日：2010-03-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/50 , H01L33/46 , H01L33/40 , H01L33/60
CPC分类号： H01L33/46 , H01L33/32 , H01L33/405 , H01L33/42 , H01L33/504 , H01L33/60 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/0002 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer.
摘要翻译：一种半导体发光元件，包括：包括n型半导体层，p型半导体层和发光层的层叠结构体; 设置成与p型半导体层接触的p侧电极; 设置成与n型半导体层接触的n侧电极; 与n型半导体层接触而具有比n侧电极的反射率高的反射率的高反射性绝缘层; 以及设置在所述n侧电极的至少一部分上和所述高反射性绝缘层的至少一部分上并与n侧电极电连接的上金属层。与n型半导体层接触的n侧电极的区域的面积小于夹在n型半导体层和上层金属层之间的高反射性绝缘层的区域的面积。

5. 发明授权

US08329489B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08329489B2
公开(公告)日：2012-12-11
申请号：US12507539
申请日：2009-07-22
申请人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8和n 1; x 1和n 1; 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上层叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

6. 发明申请

US20110227033A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER 有权
标题翻译：半导体发光装置，散热器，制造半导体发光装置的方法及制造方法
公开(公告)号：US20110227033A1
公开(公告)日：2011-09-22
申请号：US12876685
申请日：2010-09-07
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0
摘要翻译：根据一个实施例，半导体发光器件包括第一层，第二层和发光部分。第一层包括n型GaN和n型AlGaN中的至少一种。第二层包括p型AlGaN。发光部分具有单个量子阱结构。单量子阱结构包括第一阻挡层，第二阻挡层和阱层。第一阻挡层设置在第一层和第二层之间，并且包括Al x Ga 1-x 1-y 1 In y N（0

7. 发明授权

US07964887B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07964887B2
公开(公告)日：2011-06-21
申请号：US12640174
申请日：2009-12-17
申请人： Yasuo Ohba
发明人： Yasuo Ohba
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L27/15 , H01L33/32 , H01L33/504 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014
摘要： A light emitting device includes a transparent substrate having first and second surfaces, a semiconductor layer provided on the first surface, a first light emission layer provided on the semiconductor layer and emitting first ultraviolet light including a wavelength corresponding to an energy larger than a forbidden bandwidth of a semiconductor of the semiconductor layer, a second light emission layer provided between the first light emission layer and the semiconductor layer, absorbing the first ultraviolet light emitted from the first light emission layer, and emitting second ultraviolet light including a wavelength corresponding to an energy smaller than the forbidden bandwidth of the semiconductor of the semiconductor layer, and first and second electrodes provided to apply electric power to the first light emission layer.
摘要翻译：发光装置包括具有第一表面和第二表面的透明基板，设置在第一表面上的半导体层，设置在半导体层上的第一发光层，并且发射包括对应于大于禁止带宽的能量的波长的第一紫外线设置在所述第一发光层和所述半导体层之间的第二发光层，吸收从所述第一发光层发射的所述第一紫外线，以及发射包括对应于能量的波长的第二紫外线小于半导体层的半导体的禁止带宽，以及设置成向第一发光层施加电力的第一和第二电极。

8. 发明申请

US20100051994A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US20100051994A1
公开(公告)日：2010-03-04
申请号：US12548939
申请日：2009-08-27
申请人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/05001 , H01L2224/05022 , H01L2224/05139 , H01L2224/05155 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05639 , H01L2224/05644 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode provided on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film provided on the second semiconductor layer; and a second film provided on a rim of the first film on the second semiconductor layer. The first film has a relatively low contact resistance with the second semiconductor layer. The second film has a relatively high contact resistance with the second semiconductor layer. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface.
摘要翻译：一种半导体发光器件，包括：层叠结构单元，包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层; 第一电极，设置在第二半导体层侧的层叠结构单元的第一主表面上，以连接到第一半导体层; 以及设置在层叠结构单元的第一主表面上以连接到第二半导体层的第二电极。第二电极包括：设置在第二半导体层上的第一膜; 以及设置在第二半导体层上的第一膜的边缘上的第二膜。第一膜与第二半导体层具有相对低的接触电阻。第二膜与第二半导体层具有较高的接触电阻。从第二膜的外边缘到第一膜的距离在中心部分比在第一主表面的周边部分处更小。

9. 发明授权

US07615794B2 Semiconductor light emitting device and semiconductor light emitting apparatus 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US07615794B2
公开(公告)日：2009-11-10
申请号：US12195718
申请日：2008-08-21
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L29/22 , H01L29/207
CPC分类号： H01L33/40 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on the first semiconductor layer, a second electrode including a first metal film provided on the second semiconductor layer and containing at least one of silver and a silver alloy, and a second metal film provided on the first metal film and made of a metal substantially not containing silver, and a dielectric film spaced from the first metal film on the second semiconductor layer. The second metal film covers the first metal film, at least part of the dielectric film, and a surface of the second semiconductor layer exposed between the first metal film and the dielectric film.
摘要翻译：半导体发光器件包括第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，设置在第一半导体层上的第一电极，包括第一金属膜的第二电极设置在第二半导体层上并且包含银和银合金中的至少一种，以及设置在第一金属膜上并由基本上不含银的金属制成的第二金属膜，以及与第一金属膜间隔开的电介质膜第二半导体层。第二金属膜覆盖第一金属膜，介电膜的至少一部分，以及暴露在第一金属膜和电介质膜之间的第二半导体层的表面。

10. 发明申请

US20050036673A1 Image processing system, program, information storage medium, and image processing method 有权
标题翻译：图像处理系统，程序，信息存储介质和图像处理方法
公开(公告)号：US20050036673A1
公开(公告)日：2005-02-17
申请号：US10847447
申请日：2004-05-18
申请人： Yasuo Ohba , Kentaro Yamaguchi
发明人： Yasuo Ohba , Kentaro Yamaguchi
IPC分类号： G06T1/00 , G06K9/00 , H04N1/387 , H04N13/00 , H04N13/04
CPC分类号： G01C11/06 , H04N13/122 , H04N13/334
摘要： An original image area IMR is divided into divided image areas DR1 to DR4, texture coordinates specified by division point coordinates are obtained, and images of the divided image areas DR1 to DR4 are mapped onto polygons PL1 to PL4, based on the obtained texture coordinates. The original image area IMR is divided in such a manner that division spacing in a direction DIR1 towards a vanishing point VP1 from the original image becomes narrower as the divided image areas are closer to the vanishing point VP1 and texture coordinates are obtained, to implement correction processing for removing perspective of the original image. Correction processing is performed to remove perspective of images at a base surface of images IL1 and IR1 for the left eye and the right eye, the images IL2 and IR2 for the left eye and the right eye are generated, and a stereoscopic image is generated by synthesizing (by anaglyph processing) IL2 and IR2.
摘要翻译：原始图像区域IMR被划分为分割图像区域DR1至DR4，获得由分割点坐标指定的纹理坐标，并且基于获得的纹理坐标将划分的图像区域DR1至DR4的图像映射到多边形PL1至PL4上。原始图像区域IMR被划分成使得当分割图像区域更靠近消失点VP1并获得纹理坐标时，从原始图像朝向消失点VP1的方向DIR1上的分割间隔变窄，以实现校正用于去除原始图像的透视的处理。执行校正处理以去除左眼和右眼的图像IL1和IR1的基面处的图像的透视图，生成用于左眼和右眼的图像IL2和IR2，并且立体图像由合成（通过浮雕处理）IL2和IR2。

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