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1. 发明授权

US08329489B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08329489B2
公开(公告)日：2012-12-11
申请号：US12507539
申请日：2009-07-22
申请人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8和n 1; x 1和n 1; 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上层叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

2. 发明申请

US20130065340A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20130065340A1
公开(公告)日：2013-03-14
申请号：US13671580
申请日：2012-11-08
申请人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8和n 1; x 1和n 1; 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上堆叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

3. 发明授权

US08470627B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08470627B2
公开(公告)日：2013-06-25
申请号：US13671580
申请日：2012-11-08
申请人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8 @ x @ 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上堆叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

4. 发明授权

US08338844B2 Semiconductor light emitting apparatus having stacked reflective dielectric films 有权
标题翻译：具有层叠反射介电膜的半导体发光装置
公开(公告)号：US08338844B2
公开(公告)日：2012-12-25
申请号：US12549048
申请日：2009-08-27
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00 , H01L29/40 , H01L21/00
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2224/05001 , H01L2224/05124 , H01L2224/05139 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/16145 , H01L2224/32013 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2924/00014 , H01L2924/013
摘要： A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.
摘要翻译：一种制造半导体发光装置的方法包括使半导体发光器件和安装构件彼此面对。半导体发光器件包括层叠结构单元，其包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，设置在堆叠结构的主表面上的第一电极连接到第一半导体层的单元，设置在层叠结构单元的主表面上以连接到第二半导体层的第二电极，以及设置在主表面的第一半导体层和第二半导体层上的电介质堆叠膜不被第一电极和第二电极覆盖，由具有不同折射率的堆叠电介质膜形成，并且包括竖立在第一和第二电极中的至少一个的边缘的至少一部分上的突出部分。安装构件包括连接到第一和第二电极中的至少一个的连接构件。该方法还包括使用突出部分作为引导件使连接构件接触并连接到第一和第二电极中的至少一个。

5. 发明申请

US20110049541A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110049541A1
公开(公告)日：2011-03-03
申请号：US12719464
申请日：2010-03-08
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/02 , H01L33/12 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
摘要翻译：一种半导体发光器件，包括：堆叠结构单元，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极，所述第一金属层包括银或银合金，并且设置在与所述发光层相对的所述第二半导体层的一侧，所述第二金属层包括选自金的至少一种元素，铂，钯，铑，铱，钌和锇，并且设置在与第二半导体层相对的第一金属层的一侧。包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。

6. 发明申请

US20100051987A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100051987A1
公开(公告)日：2010-03-04
申请号：US12400396
申请日：2009-03-09
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L33/44 , H01L33/0025 , H01L33/06 , H01L33/24 , H01L33/38 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/013 , H01L2924/01013
摘要： A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.
摘要翻译：半导体发光器件包括：层叠结构，第一电极，第二电极和电介质层压膜。层叠结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，其中第二半导体层和发光层被选择性地去除，并且第一半导体层的一部分暴露于第二半导体层侧的第一主表面。第一电极设置在层压结构的第一主表面上并连接到第一半导体层，并且具有包括设置在第一主表面的第一半导体层上的第一金属膜的第一区域和包括第二半导体层金属膜，其设置在第一半导体层上，并且对于从第一金属膜发射的发光层的光具有较高的反射率，并且相比于第一金属膜具有比第一半导体层更高的接触电阻。第二电极设置在层叠结构的第一主表面上并连接到第二半导体层。电介质层叠膜设置在不被第一和第二电极覆盖的第一和第二半导体层上，并且具有层叠具有不同折射率的多个电介质膜。

7. 发明授权

US08963177B2 Semiconductor light emitting element and semiconductor light emitting device 有权
标题翻译：半导体发光元件及半导体发光元件
公开(公告)号：US08963177B2
公开(公告)日：2015-02-24
申请号：US12718492
申请日：2010-03-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/50 , H01L33/46 , H01L33/40 , H01L33/60
CPC分类号： H01L33/46 , H01L33/32 , H01L33/405 , H01L33/42 , H01L33/504 , H01L33/60 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/0002 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer.
摘要翻译：一种半导体发光元件，包括：包括n型半导体层，p型半导体层和发光层的层叠结构体; 设置成与p型半导体层接触的p侧电极; 设置成与n型半导体层接触的n侧电极; 与n型半导体层接触而具有比n侧电极的反射率高的反射率的高反射性绝缘层; 以及设置在所述n侧电极的至少一部分上和所述高反射性绝缘层的至少一部分上并与n侧电极电连接的上金属层。与n型半导体层接触的n侧电极的区域的面积小于夹在n型半导体层和上层金属层之间的高反射性绝缘层的区域的面积。

8. 发明申请

US20110227033A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER 有权
标题翻译：半导体发光装置，散热器，制造半导体发光装置的方法及制造方法
公开(公告)号：US20110227033A1
公开(公告)日：2011-09-22
申请号：US12876685
申请日：2010-09-07
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0
摘要翻译：根据一个实施例，半导体发光器件包括第一层，第二层和发光部分。第一层包括n型GaN和n型AlGaN中的至少一种。第二层包括p型AlGaN。发光部分具有单个量子阱结构。单量子阱结构包括第一阻挡层，第二阻挡层和阱层。第一阻挡层设置在第一层和第二层之间，并且包括Al x Ga 1-x 1-y 1 In y N（0

9. 发明申请

US20100051994A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US20100051994A1
公开(公告)日：2010-03-04
申请号：US12548939
申请日：2009-08-27
申请人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/05001 , H01L2224/05022 , H01L2224/05139 , H01L2224/05155 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05639 , H01L2224/05644 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode provided on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film provided on the second semiconductor layer; and a second film provided on a rim of the first film on the second semiconductor layer. The first film has a relatively low contact resistance with the second semiconductor layer. The second film has a relatively high contact resistance with the second semiconductor layer. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface.
摘要翻译：一种半导体发光器件，包括：层叠结构单元，包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层; 第一电极，设置在第二半导体层侧的层叠结构单元的第一主表面上，以连接到第一半导体层; 以及设置在层叠结构单元的第一主表面上以连接到第二半导体层的第二电极。第二电极包括：设置在第二半导体层上的第一膜; 以及设置在第二半导体层上的第一膜的边缘上的第二膜。第一膜与第二半导体层具有相对低的接触电阻。第二膜与第二半导体层具有较高的接触电阻。从第二膜的外边缘到第一膜的距离在中心部分比在第一主表面的周边部分处更小。

10. 发明授权

US09130127B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09130127B2
公开(公告)日：2015-09-08
申请号：US13204082
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/38 , H01L33/22
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。第一电极具有与第一半导体层接触的第一接触部分。第二电极具有与第二半导体层接触的部分。第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。第二部分是不规律的。不规则的间距比发光的峰值波长长。第一部分具有比第二部分更小的不规则性。

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