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1. 发明授权

US09070837B2 Semiconductor light-emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09070837B2
公开(公告)日：2015-06-30
申请号：US12400396
申请日：2009-03-09
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00 , H01L33/44 , H01L33/38
CPC分类号： H01L33/44 , H01L33/0025 , H01L33/06 , H01L33/24 , H01L33/38 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/013 , H01L2924/01013
摘要： A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.
摘要翻译：半导体发光器件包括：层叠结构，第一电极，第二电极和电介质层压膜。层叠结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，其中第二半导体层和发光层被选择性地去除，并且第一半导体层的一部分暴露于第二半导体层侧的第一主表面。第一电极设置在层压结构的第一主表面上并连接到第一半导体层，并且具有包括设置在第一主表面的第一半导体层上的第一金属膜的第一区域和包括第二半导体层金属膜，其设置在第一半导体层上，并且对于从第一金属膜发射的发光层的光具有较高的反射率，并且相比于第一金属膜具有比第一半导体层更高的接触电阻。第二电极设置在层叠结构的第一主表面上并连接到第二半导体层。电介质层叠膜设置在不被第一和第二电极覆盖的第一和第二半导体层上，并且具有层叠具有不同折射率的多个电介质膜。

2. 发明授权

US09012888B2 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer 有权
标题翻译：半导体发光器件，晶片，半导体发光器件的制造方法以及晶片的制造方法
公开(公告)号：US09012888B2
公开(公告)日：2015-04-21
申请号：US13406705
申请日：2012-02-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一层n型和第二层p型，包括氮化物半导体，设置在第一和第二层之间的发光单元，第一层叠结构，第一层和发光单元，以及设置在第一层和第一堆叠结构之间的第二堆叠结构。发光单元包括阻挡层和设置在阻挡层之间的阱层。第一堆叠结构包括包括氮化物半导体的第三层和与第三层堆叠并包括GaInN的第四层。第四层具有比阱层更薄的厚度。第二堆叠结构包括包括氮化物半导体的第五层和与第五层堆叠并包括GaInN的第六层。第六层的厚度比井层薄。

3. 发明授权

US08937325B2 Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer 有权
标题翻译：半导体器件，晶片，半导体器件的制造方法以及晶片的制造方法
公开(公告)号：US08937325B2
公开(公告)日：2015-01-20
申请号：US13406740
申请日：2012-02-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit.
摘要翻译：根据一个实施例，半导体器件包括包括氮化物半导体的n型第一层，包括氮化物半导体的p型第二层，发光单元和第一层叠体。发光单元设置在第一和第二层之间。第一层叠体设置在第一层和发光单元之间。第一层叠体包括多个包含AlGaInN的第三层和与第三层交替堆叠并包括GaInN的多个第四层。第一层叠体具有面向发光单元的第一表面。第一层叠体具有设置在第一表面中的凹陷。发光单元的一部分嵌入凹部的一部分。第二层的一部分设置在发光单元的一部分上。

4. 发明授权

US08921886B2 Semiconductor light emitting device, semiconductor light emitting apparatus, and method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光器件，半导体发光器件和半导体发光器件的制造方法
公开(公告)号：US08921886B2
公开(公告)日：2014-12-30
申请号：US13204021
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/00 , H01L33/40
CPC分类号： H01L33/405 , H01L24/32 , H01L33/40 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体和电极。叠层结构体具有包括氮化物系半导体的第一导电型第一半导体层，包含氮化物系半导体的第二导电型第二半导体层和设置在第一半导体层与第二半导体层之间的发光层。电极具有第一，第二和第三金属层。第一金属层设置在第二半导体层上并且包括银或银合金。第二金属层设置在第一金属层上，并且包括铂，钯，铑，铱，钌，锇中的至少一种元素。第三金属层设置在第二金属层上。沿第一至第二半导体层的方向的第三金属层的厚度等于或大于第二金属层的厚度。

5. 发明授权

US08791498B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08791498B2
公开(公告)日：2014-07-29
申请号：US12719464
申请日：2010-03-08
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
摘要翻译：一种半导体发光器件，包括：堆叠结构单元，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极，所述第一金属层包括银或银合金，并且设置在与所述发光层相对的所述第二半导体层的一侧，所述第二金属层包括选自金的至少一种元素，铂，钯，铑，铱，钌和锇，并且设置在与第二半导体层相对的第一金属层的一侧。包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。

6. 发明申请

US20140054594A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20140054594A1
公开(公告)日：2014-02-27
申请号：US13729563
申请日：2012-12-28
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/62 , H01L29/20
CPC分类号： H01L33/42 , H01L29/2003 , H01L33/0025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，电介质层，第一电极，第二电极和支撑衬底。第一层具有第一和第二表面。第二层设置在第一层的第二表面的一侧。发光层设置在第一和第二层之间。电介质层接触第二表面，折射率低于第一层的折射率。第一电极包括第一和第二部分。第一部分接触第二表面并邻近介电层设置。第二部分与第一半导体层与电介质层的相对侧接触。第二电极与第二层与发光层的相对侧接触。

7. 发明申请

US20130234298A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130234298A1
公开(公告)日：2013-09-12
申请号：US13601120
申请日：2012-08-31
申请人： Satoshi MITSUGI , Toshiyuki OKA , Shinya NUNOUE , Hiroshi KATSUNO
发明人： Satoshi MITSUGI , Toshiyuki OKA , Shinya NUNOUE , Hiroshi KATSUNO
IPC分类号： H01L23/34 , B23K26/20 , H01L23/00
CPC分类号： H01L23/34 , B23K26/0006 , B23K26/009 , B23K26/18 , B23K26/20 , B23K2103/56 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/0079 , H01L2224/29099 , H01L2224/291 , H01L2224/29139 , H01L2224/29144 , H01L2224/29149 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29171 , H01L2224/29172 , H01L2224/29184 , H01L2224/32502 , H01L2224/32506 , H01L2224/75262 , H01L2224/75985 , H01L2224/83 , H01L2224/83193 , H01L2224/83224 , H01L2224/83399 , H01L2224/834 , H01L2224/83449 , H01L2224/83455 , H01L2224/83457 , H01L2224/8346 , H01L2224/83466 , H01L2224/83471 , H01L2224/83472 , H01L2224/83484 , H01L2224/83805 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01032 , H01L2924/00
摘要： According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.
摘要翻译：根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。

8. 发明授权

US08377724B2 Method for producing semiconductor light-emitting element 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08377724B2
公开(公告)日：2013-02-19
申请号：US12929365
申请日：2011-01-19
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.
摘要翻译：半导体发光元件包括：第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，连接到第一半导体层的第一电极和第二电极，在第二半导体层上。面向第二半导体层的第二电极的一侧由银和银合金中的至少一种构成。第二电极具有在与第二半导体层相对的第二电极的平面中具有发光波长或更小的发光波长的空隙。

9. 发明授权

US08324611B2 Semiconductor light emitting device and wafer 有权
标题翻译：半导体发光器件和晶圆
公开(公告)号：US08324611B2
公开(公告)日：2012-12-04
申请号：US13137728
申请日：2011-09-08
申请人： Kei Kaneko , Yasuo Ohba , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Kei Kaneko , Yasuo Ohba , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L29/06
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/325
摘要： A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
摘要翻译：半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。发光部包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）构成的多个阻挡层，以及设置在每对多个阻挡层并由GaInN或AlGaInN制成。多个阻挡层具有最近的阻挡层和远的阻挡层。最近的阻挡层最接近多个阻挡层中的第二层。最近的阻挡层包括第一部分和第二部分。第一部分由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成。第二部分设置在第一部分和第二层之间，并由Al x Ga 1-x-y In y N（0＆lt; n 1; x，0＆n 1; y，x + y和n 1; 1）制成。第二部分中的Si浓度低于第一部分中的Si浓度，并且低于远阻隔层中的Si浓度。

10. 发明申请

US20120292631A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120292631A1
公开(公告)日：2012-11-22
申请号：US13222302
申请日：2011-08-31
申请人： Hiroshi KATSUNO , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
发明人： Hiroshi KATSUNO , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一电极，第二电极和电介质体部分。叠层结构体包括具有与第一部分并置的第一部分和第二部分的第一半导体层，设置在第二部分上的发光层，设置在发光层上的第二半导体层。第一电极包括设置在第一部分上并接触第一层的接触部分。第二电极包括设置在第二半导体层上并与第二层接触的第一部分，以及与第一部分电连接的第二部分，并且当从第一层朝向第二层时，包括与接触部分重叠的部分。电介质体部分设置在接触部分和第二部分之间。

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