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    • 1. 发明授权
    • Semiconductor light-emitting device and method for manufacturing same
    • 半导体发光器件及其制造方法
    • US09070837B2
    • 2015-06-30
    • US12400396
    • 2009-03-09
    • Hiroshi KatsunoYasuo OhbaKei KanekoMitsuhiro Kushibe
    • Hiroshi KatsunoYasuo OhbaKei KanekoMitsuhiro Kushibe
    • H01L33/00H01L33/44H01L33/38
    • H01L33/44H01L33/0025H01L33/06H01L33/24H01L33/38H01L2224/05001H01L2224/05022H01L2224/05124H01L2224/05139H01L2224/05155H01L2224/05166H01L2224/05169H01L2224/05171H01L2224/05181H01L2224/05184H01L2224/05568H01L2224/05644H01L2224/05664H01L2224/05669H01L2224/13H01L2224/48091H01L2224/73265H01L2924/00014H01L2924/013H01L2924/01013
    • A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.
    • 半导体发光器件包括:层叠结构,第一电极,第二电极和电介质层压膜。 层叠结构包括第一半导体层,第二半导体层和设置在第一半导体层和第二半导体层之间的发光层,其中第二半导体层和发光层被选择性地去除,并且 第一半导体层的一部分暴露于第二半导体层侧的第一主表面。 第一电极设置在层压结构的第一主表面上并连接到第一半导体层,并且具有包括设置在第一主表面的第一半导体层上的第一金属膜的第一区域和包括第二半导体层 金属膜,其设置在第一半导体层上,并且对于从第一金属膜发射的发光层的光具有较高的反射率,并且相比于第一金属膜具有比第一半导体层更高的接触电阻。 第二电极设置在层叠结构的第一主表面上并连接到第二半导体层。 电介质层叠膜设置在不被第一和第二电极覆盖的第一和第二半导体层上,并且具有层叠具有不同折射率的多个电介质膜。
    • 5. 发明授权
    • Semiconductor light emitting device and method for manufacturing same
    • 半导体发光器件及其制造方法
    • US08791498B2
    • 2014-07-29
    • US12719464
    • 2010-03-08
    • Hiroshi KatsunoYasuo OhbaKei KanekoMitsuhiro Kushibe
    • Hiroshi KatsunoYasuo OhbaKei KanekoMitsuhiro Kushibe
    • H01L33/00
    • H01L33/405H01L33/0079
    • A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
    • 一种半导体发光器件,包括:堆叠结构单元,包括第一导电类型的第一半导体层,第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极,所述第一金属层包括银或银合金,并且设置在与所述发光层相对的所述第二半导体层的一侧,所述第二金属层包括选自金的至少一种元素 ,铂,钯,铑,铱,钌和锇,并且设置在与第二半导体层相对的第一金属层的一侧。 包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。
    • 9. 发明授权
    • Semiconductor light emitting device and wafer
    • 半导体发光器件和晶圆
    • US08324611B2
    • 2012-12-04
    • US13137728
    • 2011-09-08
    • Kei KanekoYasuo OhbaHiroshi KatsunoMitsuhiro Kushibe
    • Kei KanekoYasuo OhbaHiroshi KatsunoMitsuhiro Kushibe
    • H01L29/06
    • H01L33/0025H01L33/06H01L33/325
    • A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
    • 半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。 发光部包括由含Si的Al x Ga 1-x-y In y N(0&nl; x,0&nl; y,x + y≦̸ 1)构成的多个阻挡层,以及设置在每对多个阻挡层 并由GaInN或AlGaInN制成。 多个阻挡层具有最近的阻挡层和远的阻挡层。 最近的阻挡层最接近多个阻挡层中的第二层。 最近的阻挡层包括第一部分和第二部分。 第一部分由含Si的Al x Ga 1-x-y In y N(0&nl; x,0&nl; y,x + y≦̸ 1)制成。 第二部分设置在第一部分和第二层之间,并由Al x Ga 1-x-y In y N(0< n 1; x,0&n 1; y,x + y和n 1; 1)制成。 第二部分中的Si浓度低于第一部分中的Si浓度,并且低于远阻隔层中的Si浓度。