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1. 发明申请

US20130065340A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20130065340A1
公开(公告)日：2013-03-14
申请号：US13671580
申请日：2012-11-08
申请人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8和n 1; x 1和n 1; 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上堆叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

2. 发明授权

US08470627B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08470627B2
公开(公告)日：2013-06-25
申请号：US13671580
申请日：2012-11-08
申请人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8 @ x @ 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上堆叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

3. 发明授权

US08329489B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08329489B2
公开(公告)日：2012-12-11
申请号：US12507539
申请日：2009-07-22
申请人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo Ohba , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8和n 1; x 1和n 1; 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上层叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

4. 发明申请

US20100055819A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20100055819A1
公开(公告)日：2010-03-04
申请号：US12507539
申请日：2009-07-22
申请人： Yasuo OHBA , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
发明人： Yasuo OHBA , Kei Kaneko , Toru Gotoda , Hiroshi Katsuno , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.
摘要翻译：提供一种制造半导体发光器件的方法。该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8和n 1; x 1和n 1; 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上堆叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

5. 发明授权

US08314437B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08314437B2
公开(公告)日：2012-11-20
申请号：US12874425
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.
摘要翻译：某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中形成n电极。

6. 发明申请

US20120056154A1 METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US20120056154A1
公开(公告)日：2012-03-08
申请号：US13037687
申请日：2011-03-01
申请人： Kotaro ZAIMA , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro ZAIMA , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/22
摘要： A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.
摘要翻译：通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上从第一金属层的与第一金属层的第一金属层相反的表面侧形成凹槽并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

7. 发明授权

US08822250B2 Semiconductor light emitting device and method for manufacturing the same 有权
公开(公告)号：US08822250B2
公开(公告)日：2014-09-02
申请号：US13665650
申请日：2012-10-31
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

8. 发明授权

US08470625B2 Method of fabricating semiconductor light emitting device and semiconductor light emitting device 有权
标题翻译：制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US08470625B2
公开(公告)日：2013-06-25
申请号：US13037687
申请日：2011-03-01
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/18 , H01L33/06 , H01L21/268 , H01L21/428
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/22
摘要： A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.
摘要翻译：通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上形成从第一基板上的第一金属层相反的表面侧的凹槽并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

9. 发明授权

US08178891B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08178891B2
公开(公告)日：2012-05-15
申请号：US12874475
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/04 , H01L33/06
摘要： Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.
摘要翻译：某些实施例提供一种半导体发光器件，包括：第一金属层; 包括p型氮化物半导体层，有源层和n型氮化物半导体层的堆叠膜; n电极; 第二金属层; 以及保护膜，其保护所述n型氮化物半导体层的上表面的外周区域，所述堆叠膜的侧面，除了与所述p型膜接触的区域以外的所述第二金属层的上表面的区域，氮化物半导体层以及与第二金属层接触的区域以外的第一金属层的上表面的区域。在n型氮化物半导体层的上表面的区域形成凹凸，该区域位于设置有n电极的区域的外部，并且覆盖有保护膜的区域之外。

10. 发明申请

US20110215292A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110215292A1
公开(公告)日：2011-09-08
申请号：US12874425
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/04 , H01L21/18
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.
摘要翻译：某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中形成n电极。

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