专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009142911A3 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：WO2009142911A3
公开(公告)日：2010-03-04
申请号：PCT/US2009043001
申请日：2009-05-06
申请人： APPLIED MATERIALS INC , WHITE JOHN M , CHOI SOO YOUNG , PARK BEOM SOO , FURUTA GAKU , CHOI YOUNG JIN , TINER ROBIN L
发明人： WHITE JOHN M , CHOI SOO YOUNG , PARK BEOM SOO , FURUTA GAKU , CHOI YOUNG JIN , TINER ROBIN L
IPC分类号： H01L21/205 , H01L21/02 , H01L21/3065
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

2. 发明申请

WO2009126827A2 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：WO2009126827A2
公开(公告)日：2009-10-15
申请号：PCT/US2009040105
申请日：2009-04-09
申请人： APPLIED MATERIALS INC , FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/205
CPC分类号： C23C16/452 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/32091 , H01J37/32357 , H01J37/3244
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

3. 发明申请

WO2010132716A3 ANODIZED SHOWERHEAD 审中-公开
标题翻译：阳光淋浴
公开(公告)号：WO2010132716A3
公开(公告)日：2011-02-10
申请号：PCT/US2010034806
申请日：2010-05-13
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , ANWAR SUHAIL , FURUTA GAKU , PARK BEOM SOO , TINER ROBIN L , WHITE JOHN M , KURITA SHINICHI
发明人： CHOI SOO YOUNG , ANWAR SUHAIL , FURUTA GAKU , PARK BEOM SOO , TINER ROBIN L , WHITE JOHN M , KURITA SHINICHI
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of het showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最接近室壁的淋浴喷头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

4. 发明申请

WO2013133983A1 SUBSTRATE SUPPORT WITH CERAMIC INSULATION 审中-公开
标题翻译：陶瓷绝缘基片支持
公开(公告)号：WO2013133983A1
公开(公告)日：2013-09-12
申请号：PCT/US2013027168
申请日：2013-02-21
申请人： APPLIED MATERIALS INC , FURUTA GAKU , WHITE JOHN M , KURITA SHINICHI , CHOI SOO YOUNG , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , WHITE JOHN M , KURITA SHINICHI , CHOI SOO YOUNG , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/683 , C23C16/458 , G02F1/13 , H01L21/205
CPC分类号： C23C16/458 , C23C16/4585 , H01J37/32559 , H01J37/32577 , H01J37/32715
摘要： Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.
摘要翻译：本发明的实施例总体上涉及用于等离子体处理室中的衬底支撑件。金属衬底支撑件具有陶瓷插入物以防止衬底支撑件与用于在处理期间保护衬底支撑件的边缘的阴影框架之间发生电弧。在大面积衬底处理室中，阴影框架可以包括多个部件。各个部件可以连接在一起，但稍微间隔开一个间隙以允许热膨胀。陶瓷插入物定位在基底支撑件上，使得当阴影框架与其相邻定位时，陶瓷插入物位于阴影框架中的间隙附近。邻近间隙的陶瓷插入物防止和/或减少电弧放电，因为间隙位于电绝缘材料上而不是导电材料上。

5. 发明申请

WO2010091205A3 GROUND RETURN FOR PLASMA PROCESSES 审中-公开
标题翻译：等离子体处理的接地返回
公开(公告)号：WO2010091205A3
公开(公告)日：2010-11-25
申请号：PCT/US2010023236
申请日：2010-02-04
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
发明人： CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF装置之一或两者的位移电极实现接地返回路径，耦合到腔室的底部的RF装置和电极或其组合。

6. 发明申请

WO2010083271A3 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：天然气引进开口的基板支持
公开(公告)号：WO2010083271A3
公开(公告)日：2010-10-21
申请号：PCT/US2010020979
申请日：2010-01-14
申请人： APPLIED MATERIALS INC , KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
发明人： KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
IPC分类号： H01L21/683 , H01L21/203 , H01L21/205 , H01L21/687
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例总体上涉及用于将衬底基本上齐平地抵靠在处理室中的衬底支撑件上的设备和方法。当大面积衬底放置在衬底支撑件上时，由于可能存在于衬底和衬底支撑件之间的气穴，衬底可能不完全与衬底支撑件齐平。气穴会导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉出气体可以将衬底基本上与支撑件齐平。在沉积过程中，静电荷可能累积并导致基材粘附在基材支撑件上。通过在衬底和衬底支撑件之间引入气体，静电力可以被克服，使得衬底可以与较少的或不需要等离子体支撑的承受器分开，这需要额外的时间和气体。

7. 发明申请

WO2008079742A3 PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL 审中-公开
标题翻译：防止膜电沉积在PECVD工艺室壁上
公开(公告)号：WO2008079742A3
公开(公告)日：2008-10-30
申请号：PCT/US2007087597
申请日：2007-12-14
申请人： APPLIED MATERIALS INC , WHITE JOHN M , PARK BEOM SOO , TINER ROBIN L , CHOI SOO YOUNG
发明人： WHITE JOHN M , PARK BEOM SOO , TINER ROBIN L , CHOI SOO YOUNG
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： C23C16/4585 , C23C16/4586 , H01J37/32495 , H01J37/32623
摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.
摘要翻译：提供了一种用于处理衬底的方法和设备。腔室主体包括腔室底部和具有狭缝阀的侧壁。包括支撑体的基板支撑件设置在室主体中。至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。至少一个延伸杆沿着支撑体的外围边缘定位。该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电的等离子体。

8. 发明申请

WO2006017136A3 PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER CURVATURE 审中-公开
标题翻译：气体扩散器曲率的等离子体均匀性控制
公开(公告)号：WO2006017136A3
公开(公告)日：2006-09-21
申请号：PCT/US2005024165
申请日：2005-07-07
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , TINER ROBIN L
发明人： CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , TINER ROBIN L
IPC分类号： C23C16/455 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过的气体通道和在气体通道的下游侧的空心阴极腔的扩散板。扩散板的下游侧具有曲率以改善通过PECVD沉积的薄膜，特别是SiN和非晶硅膜的厚度均匀性和膜性能均匀性。曲率优选由圆或椭圆的弧形描述，其顶点位于扩散板的中心点处。一方面，扩散器的空心阴极腔体积密度，表面积密度或腔体密度从扩散器的中心到外边缘增加。还提供了制造这种扩散板的方法。

9. 发明申请

WO2010042860A3 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体处理室的RF返回路径
公开(公告)号：WO2010042860A3
公开(公告)日：2010-07-15
申请号：PCT/US2009060230
申请日：2009-10-09
申请人： APPLIED MATERIALS INC , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
发明人： WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和设备，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理腔室包括：腔室主体，其具有腔室侧壁，底部和由腔室侧壁支撑的盖组件，所述腔室侧壁限定处理区域;基板支撑件，其设置在腔室主体的处理区域中;阴影框架，衬底支撑组件的边缘以及RF返回路径，RF返回路径具有耦合到影子框架的第一端和耦合到腔室侧壁的第二端。

10. 发明申请

WO2009082763A2 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：WO2009082763A2
公开(公告)日：2009-07-02
申请号：PCT/US2008088351
申请日：2008-12-24
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
发明人： KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber (200, 200', 200'') for depositing a film (231) on a substrate (232). The plasma processing chamber (200) includes a lid assembly (214) having a ground plate (225), a backing plate (240), and a non-uniformity (201) existing between the ground plate (225) and the backing plate (240). The non-uniformity (201) may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate (225) and backing plate (240). The non-uniformity (201) may include a structure (300) or a reduced spacing (400) of non-uniform surfaces. A reduced spacing (400) of non-uniform surfaces may exist where a first distance (d1, d2) between the ground plate (225) and the backing plate (240) at a first end (402) is different from a second distance (d3) between the ground plate (225) and the backing plate (240) at a second end (404). The structure (300) may be from 2cm to 10cm thick, cover from 20% to 50% of the backing plate (240), and be located away from a discontinuity (207) existing inside the chamber (200').
摘要翻译：系统，方法和装置包括用于在衬底（232）上沉积膜（231）的等离子体处理室（200,200'，200“）。等离子体处理室（200）包括具有接地板（225），背板（240）和存在于接地板（225）和背板（2）之间的不均匀性（201）的盖组件 240）。不均匀性（201）可能会干扰RF波均匀性，并导致接地板（225）和背板（240）的部分之间的阻抗不平衡。不均匀性（201）可以包括不均匀表面的结构（300）或减小的间隔（400）。可以存在不均匀表面的减小的间隔（400），其中在第一端（402）处的接地板（225）和背板（240）之间的第一距离（d1，d2）不同于第二距离 d3）在第二端（404）处于接地板（225）和背板（240）之间。结构（300）可以为2cm至10cm厚，覆盖背板（240）的20％至50％，并且位于远离存在于室（200'）内部的不连续（207）的位置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式