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1. 发明申请

WO2009126827A2 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：WO2009126827A2
公开(公告)日：2009-10-15
申请号：PCT/US2009040105
申请日：2009-04-09
申请人： APPLIED MATERIALS INC , FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/205
CPC分类号： C23C16/452 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/32091 , H01J37/32357 , H01J37/3244
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

2. 发明申请

WO2010132716A3 ANODIZED SHOWERHEAD 审中-公开
标题翻译：阳光淋浴
公开(公告)号：WO2010132716A3
公开(公告)日：2011-02-10
申请号：PCT/US2010034806
申请日：2010-05-13
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , ANWAR SUHAIL , FURUTA GAKU , PARK BEOM SOO , TINER ROBIN L , WHITE JOHN M , KURITA SHINICHI
发明人： CHOI SOO YOUNG , ANWAR SUHAIL , FURUTA GAKU , PARK BEOM SOO , TINER ROBIN L , WHITE JOHN M , KURITA SHINICHI
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of het showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最接近室壁的淋浴喷头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

3. 发明申请

WO2009142911A3 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：WO2009142911A3
公开(公告)日：2010-03-04
申请号：PCT/US2009043001
申请日：2009-05-06
申请人： APPLIED MATERIALS INC , WHITE JOHN M , CHOI SOO YOUNG , PARK BEOM SOO , FURUTA GAKU , CHOI YOUNG JIN , TINER ROBIN L
发明人： WHITE JOHN M , CHOI SOO YOUNG , PARK BEOM SOO , FURUTA GAKU , CHOI YOUNG JIN , TINER ROBIN L
IPC分类号： H01L21/205 , H01L21/02 , H01L21/3065
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

4. 发明申请

WO2013133983A1 SUBSTRATE SUPPORT WITH CERAMIC INSULATION 审中-公开
标题翻译：陶瓷绝缘基片支持
公开(公告)号：WO2013133983A1
公开(公告)日：2013-09-12
申请号：PCT/US2013027168
申请日：2013-02-21
申请人： APPLIED MATERIALS INC , FURUTA GAKU , WHITE JOHN M , KURITA SHINICHI , CHOI SOO YOUNG , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , WHITE JOHN M , KURITA SHINICHI , CHOI SOO YOUNG , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/683 , C23C16/458 , G02F1/13 , H01L21/205
CPC分类号： C23C16/458 , C23C16/4585 , H01J37/32559 , H01J37/32577 , H01J37/32715
摘要： Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.
摘要翻译：本发明的实施例总体上涉及用于等离子体处理室中的衬底支撑件。金属衬底支撑件具有陶瓷插入物以防止衬底支撑件与用于在处理期间保护衬底支撑件的边缘的阴影框架之间发生电弧。在大面积衬底处理室中，阴影框架可以包括多个部件。各个部件可以连接在一起，但稍微间隔开一个间隙以允许热膨胀。陶瓷插入物定位在基底支撑件上，使得当阴影框架与其相邻定位时，陶瓷插入物位于阴影框架中的间隙附近。邻近间隙的陶瓷插入物防止和/或减少电弧放电，因为间隙位于电绝缘材料上而不是导电材料上。

5. 发明申请

WO2010091205A3 GROUND RETURN FOR PLASMA PROCESSES 审中-公开
标题翻译：等离子体处理的接地返回
公开(公告)号：WO2010091205A3
公开(公告)日：2010-11-25
申请号：PCT/US2010023236
申请日：2010-02-04
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
发明人： CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF装置之一或两者的位移电极实现接地返回路径，耦合到腔室的底部的RF装置和电极或其组合。

6. 发明申请

WO2009082763A2 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：WO2009082763A2
公开(公告)日：2009-07-02
申请号：PCT/US2008088351
申请日：2008-12-24
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
发明人： KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber (200, 200', 200'') for depositing a film (231) on a substrate (232). The plasma processing chamber (200) includes a lid assembly (214) having a ground plate (225), a backing plate (240), and a non-uniformity (201) existing between the ground plate (225) and the backing plate (240). The non-uniformity (201) may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate (225) and backing plate (240). The non-uniformity (201) may include a structure (300) or a reduced spacing (400) of non-uniform surfaces. A reduced spacing (400) of non-uniform surfaces may exist where a first distance (d1, d2) between the ground plate (225) and the backing plate (240) at a first end (402) is different from a second distance (d3) between the ground plate (225) and the backing plate (240) at a second end (404). The structure (300) may be from 2cm to 10cm thick, cover from 20% to 50% of the backing plate (240), and be located away from a discontinuity (207) existing inside the chamber (200').
摘要翻译：系统，方法和装置包括用于在衬底（232）上沉积膜（231）的等离子体处理室（200,200'，200“）。等离子体处理室（200）包括具有接地板（225），背板（240）和存在于接地板（225）和背板（2）之间的不均匀性（201）的盖组件 240）。不均匀性（201）可能会干扰RF波均匀性，并导致接地板（225）和背板（240）的部分之间的阻抗不平衡。不均匀性（201）可以包括不均匀表面的结构（300）或减小的间隔（400）。可以存在不均匀表面的减小的间隔（400），其中在第一端（402）处的接地板（225）和背板（240）之间的第一距离（d1，d2）不同于第二距离 d3）在第二端（404）处于接地板（225）和背板（240）之间。结构（300）可以为2cm至10cm厚，覆盖背板（240）的20％至50％，并且位于远离存在于室（200'）内部的不连续（207）的位置。

7. 发明申请

WO2008106632A3 RF SHUTTER 审中-公开
标题翻译：射频快门
公开(公告)号：WO2008106632A3
公开(公告)日：2008-12-11
申请号：PCT/US2008055438
申请日：2008-02-29
申请人： APPLIED MATERIALS INC , TINER ROBIN L , FURUTA GAKU , ADACHI YUKINOBU
发明人： TINER ROBIN L , FURUTA GAKU , ADACHI YUKINOBU
IPC分类号： H01L21/20
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32651 , H01J2237/0206
摘要： The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition that occurs on undesired surfaces. By reducing the amount of deposition on undesired surfaces, particle flaking and thus, substrate contamination may be reduced.
摘要翻译：本发明通常包括用于等离子体处理装置的RF快门组件。 RF快门组件可以在处理期间减少基板和阴影框架下方的等离子体蠕变的量，从而减少在不期望的表面上发生的沉积量。通过减少不期望的表面上的沉积量，可能会降低颗粒剥落，从而可能降低底物污染。

8. 发明申请

WO2011056710A3 THIN FILM TRANSISTORS HAVING MULTIPLE DOPED SILICON LAYERS 审中-公开
标题翻译：具有多层掺杂硅层的薄膜晶体管
公开(公告)号：WO2011056710A3
公开(公告)日：2011-08-18
申请号：PCT/US2010054505
申请日：2010-10-28
申请人： APPLIED MATERIALS INC , FURUTA GAKU , CHOI SOO YOUNG , OMORI KENJI
发明人： FURUTA GAKU , CHOI SOO YOUNG , OMORI KENJI
IPC分类号： H01L29/786 , G02F1/136
CPC分类号： H01L29/66765 , G02F1/1362 , H01L29/78618
摘要： Embodiments of the present invention generally relate to a TFT and a method for its fabrication. The TFT disclosed herein is a silicon based TFT in which the active channel comprises amorphous silicon. Over the amorphous silicon, multiple layers of doped silicon are deposited in which the resistivity of the doped silicon layers is higher at the interface with the amorphous silicon layer as compared to the interface with the source and drain electrodes. Alternatively, a single doped silicon layer is deposited over the amorphous silicon in which the properties of the single doped layer change throughout the thickness. It is better to have a lower resistivity at the interface with the source and drain electrodes, but lower resistivity usually means less substrate throughput. By utilizing multiple or graded layers, low resistivity can be achieved. The embodiments disclosed herein include low resistivity without sacrificing substrate throughput.
摘要翻译：本发明的实施例一般涉及TFT及其制造方法。本文公开的TFT是其中有源沟道包括非晶硅的硅基TFT。在非晶硅上，沉积了多层掺杂的硅，其中掺杂硅层的电阻率在与非晶硅层的界面处比与源极和漏极的界面相比更高。或者，在非晶硅上沉积单个掺杂的硅层，其中单个掺杂层的性质在整个厚度上变化。在与源极和漏极的界面处具有较低的电阻率是更好的，但较低的电阻率通常意味着较少的衬底生产量。通过利用多层或分层，可以实现低电阻率。本文公开的实施例包括低电阻率而不牺牲基板生产量。

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