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1. 发明申请

WO2010042860A3 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体处理室的RF返回路径
公开(公告)号：WO2010042860A3
公开(公告)日：2010-07-15
申请号：PCT/US2009060230
申请日：2009-10-09
申请人： APPLIED MATERIALS INC , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
发明人： WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和设备，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理腔室包括：腔室主体，其具有腔室侧壁，底部和由腔室侧壁支撑的盖组件，所述腔室侧壁限定处理区域;基板支撑件，其设置在腔室主体的处理区域中;阴影框架，衬底支撑组件的边缘以及RF返回路径，RF返回路径具有耦合到影子框架的第一端和耦合到腔室侧壁的第二端。

2. 发明申请

WO2011146571A3 TIGHTLY-FITTED CERAMIC INSULATOR ON LARGE-AREA ELECTRODE 审中-公开
标题翻译：大面积电极上的贴合陶瓷绝缘子
公开(公告)号：WO2011146571A3
公开(公告)日：2012-03-08
申请号：PCT/US2011036932
申请日：2011-05-18
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , BAEK JONGHOON , WHITE JOHN M , TINER ROBIN L , ANWAR SUHAIL
发明人： KUDELA JOZEF , BAEK JONGHOON , WHITE JOHN M , TINER ROBIN L , ANWAR SUHAIL
IPC分类号： C23C16/455 , C23C16/44 , H01L21/205
CPC分类号： B05B1/185 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32651 , Y10T137/6851
摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
摘要翻译：本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

3. 发明申请

WO2013040127A3 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线式大面积等离子体反应器中均匀工艺的气体输送和分配
公开(公告)号：WO2013040127A3
公开(公告)日：2013-05-02
申请号：PCT/US2012055009
申请日：2012-09-13
申请人： APPLIED MATERIALS INC , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
发明人： WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过需要喷气孔。具有较大气体注入孔的外管可围绕每个气体分配管。气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

4. 发明申请

WO2009082763A2 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：WO2009082763A2
公开(公告)日：2009-07-02
申请号：PCT/US2008088351
申请日：2008-12-24
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
发明人： KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber (200, 200', 200'') for depositing a film (231) on a substrate (232). The plasma processing chamber (200) includes a lid assembly (214) having a ground plate (225), a backing plate (240), and a non-uniformity (201) existing between the ground plate (225) and the backing plate (240). The non-uniformity (201) may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate (225) and backing plate (240). The non-uniformity (201) may include a structure (300) or a reduced spacing (400) of non-uniform surfaces. A reduced spacing (400) of non-uniform surfaces may exist where a first distance (d1, d2) between the ground plate (225) and the backing plate (240) at a first end (402) is different from a second distance (d3) between the ground plate (225) and the backing plate (240) at a second end (404). The structure (300) may be from 2cm to 10cm thick, cover from 20% to 50% of the backing plate (240), and be located away from a discontinuity (207) existing inside the chamber (200').
摘要翻译：系统，方法和装置包括用于在衬底（232）上沉积膜（231）的等离子体处理室（200,200'，200“）。等离子体处理室（200）包括具有接地板（225），背板（240）和存在于接地板（225）和背板（2）之间的不均匀性（201）的盖组件 240）。不均匀性（201）可能会干扰RF波均匀性，并导致接地板（225）和背板（240）的部分之间的阻抗不平衡。不均匀性（201）可以包括不均匀表面的结构（300）或减小的间隔（400）。可以存在不均匀表面的减小的间隔（400），其中在第一端（402）处的接地板（225）和背板（240）之间的第一距离（d1，d2）不同于第二距离 d3）在第二端（404）处于接地板（225）和背板（240）之间。结构（300）可以为2cm至10cm厚，覆盖背板（240）的20％至50％，并且位于远离存在于室（200'）内部的不连续（207）的位置。

5. 发明申请

WO2010094002A3 RF BUS AND RF RETURN BUS FOR PLASMA CHAMBER ELECTRODE 审中-公开
标题翻译：用于等离子体室电极的RF总线和RF返回总线
公开(公告)号：WO2010094002A3
公开(公告)日：2010-12-09
申请号：PCT/US2010024206
申请日：2010-02-13
申请人： APPLIED MATERIALS INC , SORENSEN CARL A , KUDELA JOZEF , TINER ROBIN L , ANWAR SUHAIL
发明人： SORENSEN CARL A , KUDELA JOZEF , TINER ROBIN L , ANWAR SUHAIL
IPC分类号： H05H1/36 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32174 , H01J37/32091
摘要： For coupling RF power from an RF input (40) of a plasma chamber to the interior (11) of a plasma chamber, an RF bus conductor (43, 44) is connected between the RF input and a plasma chamber electrode (20-26). In one embodiment, an RF return bus conductor (53, 54) is connected to an electrically grounded wall (14-18) of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
摘要翻译：为了将来自等离子体室的RF输入（40）的RF功率耦合到等离子体室的内部（11），RF总线导体（43,44）连接在RF输入和等离子体室电极（20-26）之间）。在一个实施例中，RF返回总线导体（53,54）连接到腔室的电接地壁（14-18），并且RF总线导体和RF返回总线导体具有相应的表面，所述表面平行且面对每个其他。在另一个实施例中，RF总线导体具有垂直于等离子体腔室电极的最靠近RF总线导体的表面定向的最长尺寸的横截面。

6. 发明申请

WO2012092020A2 THIN FILM DEPOSITION USING MICROWAVE PLASMA 审中-公开
标题翻译：薄膜沉积使用微波等离子体
公开(公告)号：WO2012092020A2
公开(公告)日：2012-07-05
申请号：PCT/US2011066124
申请日：2011-12-20
申请人： APPLIED MATERIALS INC , WON TAE KYUNG , NOMINANDA HELINDA , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF
发明人： WON TAE KYUNG , NOMINANDA HELINDA , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF
IPC分类号： H01L21/205
CPC分类号： C23C16/345 , C23C16/45578 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
摘要翻译：本发明的实施方案通常提供使用改进的微波辅助CVD室的含硅介电层的沉积工艺。在一个实施例中，提供了一种在处理室中处理衬底的方法。该方法通常包括将微波功率施加到耦合到设置在处理室内的微波源的天线，其中微波源设置在气体馈送源的相对上方，该气体馈送源被配置为提供覆盖基板整个表面的气体分布覆盖，并将衬底暴露于由气体供给源提供的处理气体产生的微波等离子体中，以在低于约200摄氏度的温度下将含硅层沉积在衬底上，微波等离子体使用约500毫瓦的微波功率 cm 2至约5,000毫瓦/ cm 2，频率约为1GHz至约10GHz。

7. 发明申请

WO2012177293A3 TRANSMISSION LINE RF APPLICATOR FOR PLASMA CHAMBER 审中-公开
标题翻译：用于等离子体室的传输线RF应用器
公开(公告)号：WO2012177293A3
公开(公告)日：2013-03-14
申请号：PCT/US2012000298
申请日：2012-06-21
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , TANAKA TSUTOMU , SORENSEN CARL A , ANWAR SUHAIL , WHITE JOHN M , SHINDE RANJIT INDRAJIT , CHO SEON-MEE , TRUONG DOUGLAS D
发明人： KUDELA JOZEF , TANAKA TSUTOMU , SORENSEN CARL A , ANWAR SUHAIL , WHITE JOHN M , SHINDE RANJIT INDRAJIT , CHO SEON-MEE , TRUONG DOUGLAS D
IPC分类号： H05H1/46 , H01L21/3065 , H01P3/10
CPC分类号： H05H1/46 , H01J37/3211 , H01J37/3222 , H05H2001/463
摘要： A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.
摘要翻译：用于将RF功率耦合到等离子体室中的等离子体的传输线RF施加装置和方法。该装置包括内部导体和一个或两个外部导体。一个或两个外部导体中的每一个的主要部分包括在外部导体的内表面和外表面之间延伸的多个孔。

8. 发明申请

WO2011137373A3 VERTICAL INLINE CVD SYSTEM 审中-公开
公开(公告)号：WO2011137373A3
公开(公告)日：2012-02-09
申请号：PCT/US2011034623
申请日：2011-04-29
申请人： APPLIED MATERIALS INC , KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
发明人： KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
IPC分类号： C23C16/50 , C23C16/44 , H01L21/205
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

9. 发明申请

WO2011062940A2 LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING 审中-公开
标题翻译：具有AT电极RF匹配的大面积等离子体处理室
公开(公告)号：WO2011062940A2
公开(公告)日：2011-05-26
申请号：PCT/US2010056946
申请日：2010-11-17
申请人： APPLIED MATERIALS INC , SORENSEN CARL , WHITE JOHN M , KUDELA JOZEF
发明人： SORENSEN CARL , WHITE JOHN M , KUDELA JOZEF
IPC分类号： H05H1/46 , H05H1/34
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供了具有电极间RF匹配的等离子体处理系统和使用该等离子体处理系统处理基板的方法。在一个实施例中，等离子体处理系统包括腔室主体，基板支架，电极，盖组件和RF调谐元件。基板支撑件设置在腔室主体中限定的处理容积中。电极位于基板支架上方并位于盖组件的盖下方。 RF调谐元件设置在盖和电极之间并且耦合到电极。

10. 发明申请

WO2011137373A4 VERTICAL INLINE CVD SYSTEM 审中-公开
标题翻译：垂直在线CVD系统
公开(公告)号：WO2011137373A4
公开(公告)日：2012-03-15
申请号：PCT/US2011034623
申请日：2011-04-29
申请人： APPLIED MATERIALS INC , KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
发明人： KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
IPC分类号： C23C16/50 , C23C16/44 , H01L21/205
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明总体上涉及一种具有能够处理多个基板的处理室的垂直CVD系统。多个衬底设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是一个水平居中的垂直等离子体发生器，它允许在等离子体发生器的两侧同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两条相同的处理线，各自具有其自己的处理室，彼此相邻地布置。多个机器人用于加载和卸载处理系统中的基板。每个机器人都可以访问系统内的两条生产线。

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