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    • 3. 发明申请
    • METHOD FOR DEPOSITING AN ENCAPSULATING FILM
    • 沉积膜的方法
    • WO2013123431A1
    • 2013-08-22
    • PCT/US2013/026492
    • 2013-02-15
    • APPLIED MATERIALS, INC.CHEN, Jrjyan JerryWON, Tae KyungPARK, Beom SooCHOI, Young JinCHOI, Soo Young
    • CHEN, Jrjyan JerryWON, Tae KyungPARK, Beom SooCHOI, Young JinCHOI, Soo Young
    • H01L51/56H05B33/10H05B33/04
    • H01L51/5256C23C16/26C23C16/345
    • A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.
    • 描述了用于将材料层(例如封装膜)沉积到基底上的方法和装置。 在一个实施方案中,封装膜形成方法包括将气体混合物输送到处理室中,所述气体混合物包含含硅氧烷气体,第一含氮气体,第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分配板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米,对处理室内的气体混合物通电; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。 在其他实施例中,有机介电层夹在无机封装层之间。