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1. 发明申请

WO2013169559A1 SIOX PROCESS CHEMISTRY DEVELOPMENT USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：使用微波等离子体化学气相沉积的SIOX工艺化学发展
公开(公告)号：WO2013169559A1
公开(公告)日：2013-11-14
申请号：PCT/US2013/039341
申请日：2013-05-02
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , YIM, Dong-Kil , WHITE, John M. , KUDELA, Jozef
发明人： WON, Tae Kyung , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , YIM, Dong-Kil , WHITE, John M. , KUDELA, Jozef
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400°C, flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，将包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，向微波功率施加微波功率从反应气体产生微波等离子体，并在衬底的暴露表面的至少一部分上沉积氧化硅层。

2. 发明申请

WO2013151786A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：WO2013151786A1
公开(公告)日：2013-10-10
申请号：PCT/US2013/032990
申请日：2013-03-19
申请人： APPLIED MATERIALS, INC. , WANG, Qunhua , CHOI, Soo Young , TINER, Robin L. , WHITE, John M. , FURUTA, Gaku , PARK, Beom Soo
发明人： WANG, Qunhua , CHOI, Soo Young , TINER, Robin L. , WHITE, John M. , FURUTA, Gaku , PARK, Beom Soo
IPC分类号： H01L21/205
CPC分类号： C23C14/042 , C23C16/042
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

3. 发明申请

WO2013123431A1 METHOD FOR DEPOSITING AN ENCAPSULATING FILM 审中-公开
标题翻译：沉积膜的方法
公开(公告)号：WO2013123431A1
公开(公告)日：2013-08-22
申请号：PCT/US2013/026492
申请日：2013-02-15
申请人： APPLIED MATERIALS, INC. , CHEN, Jrjyan Jerry , WON, Tae Kyung , PARK, Beom Soo , CHOI, Young Jin , CHOI, Soo Young
发明人： CHEN, Jrjyan Jerry , WON, Tae Kyung , PARK, Beom Soo , CHOI, Young Jin , CHOI, Soo Young
IPC分类号： H01L51/56 , H05B33/10 , H05B33/04
CPC分类号： H01L51/5256 , C23C16/26 , C23C16/345
摘要： A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.
摘要翻译：描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分配板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对处理室内的气体混合物通电; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。在其他实施例中，有机介电层夹在无机封装层之间。

4. 发明申请

WO2013052298A1 METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION 审中-公开
标题翻译：用含有气体稀释剂的含硅层的方法
公开(公告)号：WO2013052298A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/056928
申请日：2012-09-24
申请人： APPLIED MATERIALS, INC. , WANG, Qunhua , WANG, Weijie , CHOI, Young Jin , CHO, Seon-Mee , CUI, Yi , PARK, Beom Soo , CHOI, Soo Young
发明人： WANG, Qunhua , WANG, Weijie , CHOI, Young Jin , CHO, Seon-Mee , CUI, Yi , PARK, Beom Soo , CHOI, Soo Young
IPC分类号： H01L29/786 , H01L21/205 , H01L21/31
CPC分类号： H01L21/31 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L29/66757 , H01L29/786 , H01L29/7869 , H01L2021/775
摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要翻译：本公开的实施例通常提供在TFT器件中形成含硅层的方法。硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅氧键保留以形成基本上无氢的含硅层。

5. 发明申请

WO2010132716A2 ANODIZED SHOWERHEAD 审中-公开
标题翻译：阳光淋浴
公开(公告)号：WO2010132716A2
公开(公告)日：2010-11-18
申请号：PCT/US2010/034806
申请日：2010-05-13
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , ANWAR, Suhail , FURUTA, Gaku , PARK, Beom Soo , TINER, Robin L. , WHITE, John M. , KURITA, Shinichi
发明人： CHOI, Soo Young , ANWAR, Suhail , FURUTA, Gaku , PARK, Beom Soo , TINER, Robin L. , WHITE, John M. , KURITA, Shinichi
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of het showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最接近室壁的淋浴喷头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

6. 发明申请

WO2010111286A3 HIGH TEMPERATURE THIN FILM TRANSISTOR ON SODA LIME GLASS 审中-公开
公开(公告)号：WO2010111286A3
公开(公告)日：2010-09-30
申请号：PCT/US2010/028341
申请日：2010-03-23
申请人： APPLIED MATERIALS, INC. , YANG, Ya-Tang , PARK, Beom Soo , WON, Tae K. , CHOI, Soo Young
发明人： YANG, Ya-Tang , PARK, Beom Soo , WON, Tae K. , CHOI, Soo Young
IPC分类号： H01L29/786 , H01L21/205
摘要： The present invention generally comprises a low cost TFT and a method of manufacturing a TFT. For TFTs, soda lime glass would be an attractive alternative to non-alkali glass, but a soda lime glass substrate will permit sodium to diffuse into the active layer and degrade the performance of the TFT. Substrates comprising a polyimide, because they are flexible, would also be attractive to utilize instead of non-alkali glass substrates, but the plastic substrates permit carbon to diffuse into the active layer. By depositing a silicon oxynitride adhesion layer over the soda lime glass substrate and a silicon rich barrier layer over the adhesion layer, diffusion may be reduced and deposition may occur at high temperatures. Thus, a lower cost TFT may be produced with a soda lime glass substrate or a substrate comprising a polyimide as compared to a non-alkali glass substrate.

7. 发明申请

WO2010083271A2 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：基础支持与气体介绍开幕
公开(公告)号：WO2010083271A2
公开(公告)日：2010-07-22
申请号：PCT/US2010/020979
申请日：2010-01-14
申请人： APPLIED MATERIALS, INC. , KIM, Sam H. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , TINER, Robin L. , PARK, Beom Soo
发明人： KIM, Sam H. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , TINER, Robin L. , PARK, Beom Soo
IPC分类号： H01L21/683 , H01L21/687 , H01L21/203 , H01L21/205
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当大面积基板被放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全地与基板支撑件齐平。气囊可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并导致基板粘附到基板支撑件。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

8. 发明申请

WO2009142911A2 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：WO2009142911A2
公开(公告)日：2009-11-26
申请号：PCT/US2009/043001
申请日：2009-05-06
申请人： APPLIED MATERIALS, INC. , WHITE, John, M. , CHOI, Soo, Young , PARK, Beom, Soo , FURUTA, Gaku , CHOI, Young, Jin , TINER, Robin, L.
发明人： WHITE, John, M. , CHOI, Soo, Young , PARK, Beom, Soo , FURUTA, Gaku , CHOI, Young, Jin , TINER, Robin, L.
IPC分类号： H01L21/205 , H01L21/3065 , H01L21/02
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

9. 发明申请

WO2009126827A3 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
公开(公告)号：WO2009126827A3
公开(公告)日：2009-10-15
申请号：PCT/US2009/040105
申请日：2009-04-09
申请人： APPLIED MATERIALS, INC. , FURUTA, Gaku , CHOI, Young-Jin , CHOI, Soo Young , PARK, Beom, Soo , WHITE, John, M. , ANWAR, Suhail , TINER, Robin, L.
发明人： FURUTA, Gaku , CHOI, Young-Jin , CHOI, Soo Young , PARK, Beom, Soo , WHITE, John, M. , ANWAR, Suhail , TINER, Robin, L.
IPC分类号： H01L21/205
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.

10. 发明申请

WO2009126827A2 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：WO2009126827A2
公开(公告)日：2009-10-15
申请号：PCT/US2009040105
申请日：2009-04-09
申请人： APPLIED MATERIALS INC , FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/205
CPC分类号： C23C16/452 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/32091 , H01J37/32357 , H01J37/3244
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

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