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1. 发明专利

JP2002170779A APPARATUS FOR REDUCING PARTICLE RESIDUE IN SEMICONDUCTOR PROCESSING CHAMBER 审中-公开
公开(公告)号：JP2002170779A
公开(公告)日：2002-06-14
申请号：JP2001305705
申请日：2001-10-01
申请人： APPLIED MATERIALS INC
发明人： GUJER RUDOLF , CHO TOM K , KARAZIM MICHAEL P , ISHIKAWA TETSUYA
IPC分类号： H01L21/00 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for reducing particle residues in a semiconductor wafer processing system. SOLUTION: The apparatus is provided with a chamber and a chamber slot 196 which extends through a side wall of the chamber. A processing platform 120 having at least one side wall 121 is coupled to the chamber, and a wafer channel 131 extends through the side wall of the chamber and at least one side wall of the processing platform 120 such that the wafer channel 131 intersects the chamber slot 196. A chamber slit valve 190 extends through the chamber slot 196 and controls particle residues in the wafer channel 131.

2. 发明专利

JP2007247068A Uv curing system 有权
标题翻译： UV固化系统
公开(公告)号：JP2007247068A
公开(公告)日：2007-09-27
申请号：JP2007070851
申请日：2007-03-19
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： ROCHA-ALVAREZ JUAN CARLOS , NOWAK THOMAS , DALE R DU BOIS , BALUJA SANJEEV , HENDRICKSON SCOTT A , HO DUSTIN W , ANDRZEJ KASZUBA , CHO TOM K , M SAAD HICHEM , MUKUTI NDANKA O
IPC分类号： C23C16/48 , C23C16/42 , H01L21/316
CPC分类号： B05D3/067 , B29C71/04 , B29C2035/0827 , F26B3/28 , H01L21/67115
摘要： PROBLEM TO BE SOLVED: To improve an ultraviolet (UV) curing chamber for curing a dielectric substance provided on a substrate and a method for curing the dielectric substance by using a UV radial rays. SOLUTION: The substrate treatment tool by one embodiment includes a main body delineating a substrate treatment region, a substrate support adapted to support the substrate within the substrate treatment region, a UV lamp constituted to transmit the UV rays to the substrate arranged on the substrate support, and a motor coupled operatively so as to rotate at least either of the UV lamp or the substrate support at least 180° with each other. The substrate treatment tool can further includes a complementary high-strength region generating a substantially uniform irradiation pattern by being combined at the time of being rotated and one or more reflectors adapted to generate a flat pattern of the UV rays having a low-strength region on the substrate. Other embodiments are also disclosed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了改善用于固化设置在基板上的电介质的紫外线（UV）固化室以及通过使用UV径向射线来固化电介质的方法。解决方案：通过一个实施例的基板处理工具包括描绘基板处理区域的主体，适于在基板处理区域内支撑基板的基板支撑件，构造成将UV线透射到布置在基板上的基板的UV灯基板支撑件和可操作地耦合以使UV灯或基板支撑件中的至少一个彼此旋转至少180°的马达。基板处理工具还可以包括互补的高强度区域，其通过在旋转时被组合而产生基本上均匀的照射图案，以及适于产生具有低强度区域的UV线的平坦图案的一个或多个反射器底物。还公开了其他实施例。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2002198365A APPARATUS FOR CLEANING A SEMICONDUCTOR PROCESS CHAMBER 审中-公开
公开(公告)号：JP2002198365A
公开(公告)日：2002-07-12
申请号：JP2001356388
申请日：2001-11-21
申请人： APPLIED MATERIALS INC
发明人： PANG LILY L , CHO TOM K , ISHIKAWA TETSUYA
IPC分类号： H01L21/302 , C23C16/455 , F16L37/02 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for distributing a cleaning gas to a semiconductor substrate processing chamber. SOLUTION: The apparatus comprises a feed block disposed on top of the processing chamber and a support block disposed over the feed block. The feed block and the support block slidably interfit and are axially moveable with respect to one another.

4. 发明专利

JP2002158180A METHOD OF GUIDING GAS FLOW IN SUBSTRATE PROCESSING CHAMBER 审中-公开
公开(公告)号：JP2002158180A
公开(公告)日：2002-05-31
申请号：JP2001239506
申请日：2001-08-07
申请人： APPLIED MATERIALS INC
发明人： LAXMAN MURUGESH , KRISHNARAJ PADMANABHAN , COX MICHAEL S , LAI CANFENG , DUBEY NARENDRA , CHO TOM K , GONDHALEKAR SUDHIR , PANG LILY L
IPC分类号： C23C16/44 , C23C16/455 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method useful for processing a substrate in a chamber, specifically useful, for example, for the cleaning of the chamber. SOLUTION: The substrate processing chamber 30 comprises a first gas distributor 65 so adapted as to supply a processing gas into the chamber 30 to process the substrate 5; a second gas distributor 215 so adapted as to supply a cleaning gas into the chamber 30 to clean the chamber; and an exhaust pipe 90 for exhausting the processing gas or cleaning gas out of the chamber 30.

5. 发明专利

SG136078A1 UV CURE SYSTEM 未知
公开(公告)号：SG136078A1
公开(公告)日：2007-10-29
申请号：SG2007019466
申请日：2007-03-15
申请人： APPLIED MATERIALS INC
发明人： ROCHA-ALVAREZ JUAN CARLOS , NOWAK THOMAS , BOIS DALE R DU , BALUJA SANJEEV , HENDRICKSON SCOTT A , HO DUSTIN W , KASZUBA ANDRZEI , CHO TOM K , MAESAAD HICHEM , MUKUTI NDANKA O
IPC分类号： G21K1/06 , B05D3/06
摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate (50) processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp (32) spaced apart from the substrate support, the lamp (32) configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors (36), (40) adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. other embodiments are also disclosed.

6. 发明专利

SG11201406626SA METHOD AND APPARATUS FOR SUBSTRATE SUPPORT WITH MULTI-ZONE HEATING 未知
公开(公告)号：SG11201406626SA
公开(公告)日：2015-03-30
申请号：SG11201406626S
申请日：2013-02-26
申请人： APPLIED MATERIALS INC
发明人： YANG YAO-HUNG , OH JEONGHOON , HOOSHDARAN FRANK F , CHO TOM K , HOU TAO
IPC分类号： H01L21/683 , C23C16/46 , H01L21/205 , H05B3/20

7. 发明申请

WO2010021938A2 SHOWERHEAD AND SHADOW FRAME 审中-公开
标题翻译：喷头和阴影框架
公开(公告)号：WO2010021938A2
公开(公告)日：2010-02-25
申请号：PCT/US2009053922
申请日：2009-08-14
申请人： APPLIED MATERIALS INC , CHO TOM K , YUAN ZHENG , SHIEH BRIAN SY-YUAN
发明人： CHO TOM K , YUAN ZHENG , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/042 , C23C16/45565 , C23C16/505
摘要： The present invention generally relates to a gas distribution showerhead and a shadow frame for an apparatus. By extending the corners of the gas distribution showerhead the electrode area may be expanded relative to the anode and thus, uniform film properties may be obtained. Additionally, the expanded corners of the gas distribution showerhead may have gas passages extending therethrough. In one embodiment, hollow cathode cavities may be present on the bottom surface of the showerhead without permitting gas to pass therethrough. The shadow frame in the apparatus may also have its corner areas extended out to enlarge the anode in the corner areas of the substrate being processed and thus, may lead to deposition of a material on the substrate having substantially uniform properties.
摘要翻译：本发明总体上涉及用于设备的气体分配喷头和阴影框架。通过延伸气体分配喷头的角部，电极区域可以相对于阳极膨胀，并且因此可以获得均匀的膜特性。另外，气体分配喷头的扩展拐角可具有延伸穿过其中的气体通道。在一个实施例中，空心阴极腔可以存在于喷头的底表面上而不允许气体通过。装置中的阴影框架也可以使其角部区域伸出以扩大正被处理的衬底的角部区域中的阳极，并因此可导致在具有基本上均匀特性的衬底上沉积材料。

8. 发明申请

WO2011008805A3 PROCESSING CHAMBER WITH TRANSLATING WEAR PLATE FOR LIFT PIN 审中-公开
标题翻译：带升降磨损板的升降室
公开(公告)号：WO2011008805A3
公开(公告)日：2011-05-05
申请号：PCT/US2010041895
申请日：2010-07-14
申请人： APPLIED MATERIALS INC , WHITE JOHN M , OH JEONGHOON , CHO TOM K , JAMES SILJA , PAI UDAY , LOPEZ OSCAR , POLYAK ALEXANDER S
发明人： WHITE JOHN M , OH JEONGHOON , CHO TOM K , JAMES SILJA , PAI UDAY , LOPEZ OSCAR , POLYAK ALEXANDER S
IPC分类号： H01L21/68 , G02F1/13 , H01L21/02 , H01L21/683
CPC分类号： H01L21/68742
摘要： Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.
摘要翻译：提供了用于处理包括平移磨损板和/或衬套组件的大面积衬底的方法和装置的实施例，用于减小用于在衬底支撑件上在处理室或其他类型的室中间隔衬底的提升销上的应力。在另一个实施例中，一种用于处理基板的装置包括处理室，该处理室包括设置在室体中的基板支撑件衬套组件设置在衬底支撑件中。升降销穿过套管组件布置。提供磨损板，该磨损板联接到腔体并与升降销对齐。耐磨板可相对于腔室主体的中心线横向移动，以在接触耐磨板时适应提升销的横向运动。

9. 发明申请

WO2011009007A2 IMPROVED LIFT PIN GUIDES 审中-公开
标题翻译：改进的提升引脚指南
公开(公告)号：WO2011009007A2
公开(公告)日：2011-01-20
申请号：PCT/US2010042199
申请日：2010-07-15
申请人： APPLIED MATERIALS INC , PAI UDAY , LOPEZ OSCAR , OH JEONGHOON , CHO TOM K , WHITE JOHN M , JAMES SILJA , POLYAK ALEXANDER S
发明人： PAI UDAY , LOPEZ OSCAR , OH JEONGHOON , CHO TOM K , WHITE JOHN M , JAMES SILJA , POLYAK ALEXANDER S
IPC分类号： H01L21/68 , G02F1/13 , H01L21/205
CPC分类号： H01L21/68742 , C23C14/50 , C23C16/4586
摘要： Lift pin guides include bearing elements with rollers having liners comprised of a material that provides both self lubrication and cushioning in order to prevent lift pin binding and extend the life of the lift pins and the lift pin guides. In one embodiment, each lift pin guide includes an upper bearing element near the upper surface of a substrate support and a lower bearing element disposed a distance beneath the substrate support in order to reduce stresses experienced by the lift pin. The lift pin guides may be used in a vacuum deposition chamber adapted to deposit materials onto substrates to form electronic devices such as thin film transistors, organic light emitting diodes, photovoltaic devices or solar cells, including chemical vapor deposition chambers and physical vapor deposition chambers. The lift pin guides may also be used in load lock chambers, etching chambers or other applications where lift pins are utilized.
摘要翻译：升降销引导件包括具有滚子的轴承元件，滚子具有由既提供自润滑又提供缓冲的材料组成的衬垫，以防止提升销结合并延长提升销和提升销引导件的寿命。在一个实施例中，每个提升销引导件包括靠近衬底支撑件的上表面的上支撑元件和布置在衬底支撑件下方一段距离处的下支撑元件，以便减少提升销所经受的应力。提升销引导件可以用于真空沉积室中，该真空沉积室适于将材料沉积到基底上以形成电子装置，例如薄膜晶体管，有机发光二极管，光伏装置或太阳能电池，包括化学气相沉积室和物理气相沉积室。升降杆引导件也可用于负载锁定室，蚀刻室或使用升降杆的其他应用场合。

10. 发明申请

WO2011028349A2 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
标题翻译：含硅薄膜沉积的远离氢等离子体源
公开(公告)号：WO2011028349A2
公开(公告)日：2011-03-10
申请号：PCT/US2010044133
申请日：2010-08-02
申请人： APPLIED MATERIALS INC , YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
发明人： YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
IPC分类号： H01L21/205 , H01L21/336 , H01L31/042
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/452 , C23C16/505 , H01J37/32357 , H01J37/32449 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
摘要翻译：提供了用于在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。在一个实施例中，用于在衬底上形成含硅层的方法包括将衬底提供到处理室中，将具有含硅气体的气体混合物提供到处理室中，从远程等离子体源提供含氢气体，处理室，向处理室施加小于17.5mWatt / cm 2的RF功率，以及在衬底上形成含硅层。

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