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1. 发明授权

US6348725B2 Plasma processes for depositing low dielectric constant films 有权
公开(公告)号：US6348725B2
公开(公告)日：2002-02-19
申请号：US24738199
申请日：1999-02-10
申请人： APPLIED MATERIALS INC
发明人： CHEUNG DAVID , YAU WAI-FAN , MANDAL ROBERT P , JENG SHIN-PUU , LIU KUO-WEI , LU YUNG-CHENG , BARNES MICHAEL , WILLECKE RALF B , MOGHADAM FARHAD , ISHIKAWA TETSUYA , POON TZE WING
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L23/58 , B32B9/04
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2-SiH-O-SiH-(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

2. 发明授权

US6303523B2 Plasma processes for depositing low dielectric constant films 有权
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US6303523B2
公开(公告)日：2001-10-16
申请号：US18555598
申请日：1998-11-04
申请人： APPLIED MATERIALS INC
发明人： CHEUNG DAVID , YAU WAI-FAN , MANDAL ROBERT P , JENG SHIN-PUU , LIU KUO-WEI , LU YUNG-CHENG , BARNES MICHAEL , WILLECKE RALF B , MOGHADAM FARHAD , ISHIKAWA TETSUYA , POON TZE WING
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , C23C16/505
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10W至约150W的恒定RF功率水平的反应或来自在20％至30％的占空比范围内约20 W至约250 W。

3. 发明专利

DE60038267D1 未知
公开(公告)号：DE60038267D1
公开(公告)日：2008-04-24
申请号：DE60038267
申请日：2000-07-25
申请人： APPLIED MATERIALS INC
发明人： WANG YAXIN , CHAN DIANA , SAHIN TURGUT , ISHIKAWA TETSUYA , MOGHADAM FARHAD
IPC分类号： C23C16/30 , H01L21/316 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31
摘要： A substrate processing system (100) includes a housing (102) defining a chamber for forming a film on the substrate (122) surface of a substrate disposed within the chamber. The system includes a first plurality of nozzles (136) that extend into the chamber for injecting a first chemical at a first distance from a periphery of the substrate (140) surface, and a second plurality of nozzles that extend into the chamber for injecting a second chemical at a second distance from the periphery of the substrate surface. The second distance is substantially equal to or smaller than the first distance. In one embodiment, the first chemical contains a dielectric material and the second chemical contains dopant species which react with the first chemical to deposit a doped dielectric material on the substrate. Injecting the dopant species closer to the substrate surface than previously done ensures that the dopant species are distributed substantially uniformly over the substrate surface and the deposition of a stable doped dielectric layer.

4. 发明专利

DE69717711T2 未知
公开(公告)号：DE69717711T2
公开(公告)日：2003-09-18
申请号：DE69717711
申请日：1997-05-13
申请人： APPLIED MATERIALS INC
发明人： LI SHIJIAN , WANG YAXIN , REDEKER FRED C , ISHIKAWA TETSUYA , COLLINS ALAN W
IPC分类号： C23C16/44 , C23C16/40 , C23C16/455 , H01L21/31 , H01L21/316
摘要： A method for depositing a film onto a substrate within a deposition chamber is provided comprising the steps of injecting a first process gas into the chamber at a plurality of positions surrounding a substrate within the chamber, injecting a second process gas into the chamber at a first region spaced apart from and located generally centrally above the substrate, and injecting a third process gas, preferably an oxygen-supplying gas, into the chamber at second region spaced apart from and located generally centrally above said substrate. An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in a uniform film having a uniformly low (under 3.4) dielectric constant across the film.

5. 发明专利

DE69717711D1 未知
公开(公告)号：DE69717711D1
公开(公告)日：2003-01-23
申请号：DE69717711
申请日：1997-05-13
申请人： APPLIED MATERIALS INC
发明人： LI SHIJIAN , WANG YAXIN , REDEKER FRED C , ISHIKAWA TETSUYA , COLLINS ALAN W
IPC分类号： C23C16/44 , C23C16/40 , C23C16/455 , H01L21/31 , H01L21/316
摘要： A method for depositing a film onto a substrate within a deposition chamber is provided comprising the steps of injecting a first process gas into the chamber at a plurality of positions surrounding a substrate within the chamber, injecting a second process gas into the chamber at a first region spaced apart from and located generally centrally above the substrate, and injecting a third process gas, preferably an oxygen-supplying gas, into the chamber at second region spaced apart from and located generally centrally above said substrate. An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in a uniform film having a uniformly low (under 3.4) dielectric constant across the film.

6. 发明专利

DE69929771T2 未知
公开(公告)号：DE69929771T2
公开(公告)日：2006-10-12
申请号：DE69929771
申请日：1999-02-10
申请人： APPLIED MATERIALS INC
发明人： CHEUNG DAVID , YAU WAI-FAN , MANDAL P , JENG SHIN-PUU , LIU KUO-WEI , LU YUNG-CHENG , BARNES MIKE , WILLECKE B , MOGHADAM FARHAD , ISHIKAWA TETSUYA , POON TZE
IPC分类号： H01L21/316 , C23C16/40 , H01L21/768
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

7. 发明专利

DE69325633D1 未知
公开(公告)号：DE69325633D1
公开(公告)日：1999-08-19
申请号：DE69325633
申请日：1993-12-01
申请人： APPLIED MATERIALS INC
发明人： COLLINS KENNETH S , TROW JOHN R , TSUI JOSHUA CHIU-WING , RODERICK CRAIG A , BRIGHT NICOLAS J , MARKS JEFFREY , ISHIKAWA TETSUYA , DING JIAN
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683 , C23C14/50 , H01L21/00 , B23K26/00 , C23C16/44
摘要： The disclosure relates to an electrostatic chuck (10) for holding a wafer (12) in a plasma processing chamber. The chuck includes a pedestal (14) having a top surface (46), an internal manifold for carrying a cooling gas, and a first plurality of holes (48) leading from the internal manifold toward said top surface; and a dielectric layer (44) on the top surface of the pedestal. The dielectric layer has a top side (54) and second plurality of holes (58), each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes (48a to g) and the second hole (58) aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

8. 发明专利

DE68917561T2 未知
公开(公告)号：DE68917561T2
公开(公告)日：1995-04-13
申请号：DE68917561
申请日：1989-11-08
申请人： APPLIED MATERIALS INC
发明人： COLLINS KENNETH STUART , ISHIKAWA TETSUYA , TOSHIMA MASATO , CHENG DAVID
IPC分类号： C23C16/44 , C23C16/448 , C23C16/52 , H01L21/205 , H01L21/31 , C30B25/14

9. 发明专利

DE68917561D1 未知
公开(公告)号：DE68917561D1
公开(公告)日：1994-09-22
申请号：DE68917561
申请日：1989-11-08
申请人： APPLIED MATERIALS INC
发明人： COLLINS KENNETH STUART , ISHIKAWA TETSUYA , TOSHIMA MASATO , CHENG DAVID
IPC分类号： C23C16/44 , C23C16/448 , C23C16/52 , H01L21/205 , H01L21/31 , C30B25/14

10. 发明专利

DE60038267T2 未知
公开(公告)号：DE60038267T2
公开(公告)日：2009-04-30
申请号：DE60038267
申请日：2000-07-25
申请人： APPLIED MATERIALS INC
发明人： WANG YAXIN , CHAN DIANA , SAHIN TURGUT , ISHIKAWA TETSUYA , MOGHADAM FARHAD
IPC分类号： C23C16/30 , H01L21/316 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31
摘要： A substrate processing system (100) includes a housing (102) defining a chamber for forming a film on the substrate (122) surface of a substrate disposed within the chamber. The system includes a first plurality of nozzles (136) that extend into the chamber for injecting a first chemical at a first distance from a periphery of the substrate (140) surface, and a second plurality of nozzles that extend into the chamber for injecting a second chemical at a second distance from the periphery of the substrate surface. The second distance is substantially equal to or smaller than the first distance. In one embodiment, the first chemical contains a dielectric material and the second chemical contains dopant species which react with the first chemical to deposit a doped dielectric material on the substrate. Injecting the dopant species closer to the substrate surface than previously done ensures that the dopant species are distributed substantially uniformly over the substrate surface and the deposition of a stable doped dielectric layer.

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