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1. 发明申请

WO2010021938A2 SHOWERHEAD AND SHADOW FRAME 审中-公开
标题翻译：喷头和阴影框架
公开(公告)号：WO2010021938A2
公开(公告)日：2010-02-25
申请号：PCT/US2009053922
申请日：2009-08-14
申请人： APPLIED MATERIALS INC , CHO TOM K , YUAN ZHENG , SHIEH BRIAN SY-YUAN
发明人： CHO TOM K , YUAN ZHENG , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/042 , C23C16/45565 , C23C16/505
摘要： The present invention generally relates to a gas distribution showerhead and a shadow frame for an apparatus. By extending the corners of the gas distribution showerhead the electrode area may be expanded relative to the anode and thus, uniform film properties may be obtained. Additionally, the expanded corners of the gas distribution showerhead may have gas passages extending therethrough. In one embodiment, hollow cathode cavities may be present on the bottom surface of the showerhead without permitting gas to pass therethrough. The shadow frame in the apparatus may also have its corner areas extended out to enlarge the anode in the corner areas of the substrate being processed and thus, may lead to deposition of a material on the substrate having substantially uniform properties.
摘要翻译：本发明总体上涉及用于设备的气体分配喷头和阴影框架。通过延伸气体分配喷头的角部，电极区域可以相对于阳极膨胀，并且因此可以获得均匀的膜特性。另外，气体分配喷头的扩展拐角可具有延伸穿过其中的气体通道。在一个实施例中，空心阴极腔可以存在于喷头的底表面上而不允许气体通过。装置中的阴影框架也可以使其角部区域伸出以扩大正被处理的衬底的角部区域中的阳极，并因此可导致在具有基本上均匀特性的衬底上沉积材料。

2. 发明申请

WO2009154889A3 GAS DISTRIBUTION SHOWERHEAD SKIRT 审中-公开
标题翻译：气体分配淋浴裙
公开(公告)号：WO2009154889A3
公开(公告)日：2010-02-25
申请号：PCT/US2009043189
申请日：2009-05-07
申请人： APPLIED MATERIALS INC , CHO TOM K , SHIEH BRIAN SY-YUAN , YUAN ZHENG
发明人： CHO TOM K , SHIEH BRIAN SY-YUAN , YUAN ZHENG
IPC分类号： H01L21/205
CPC分类号： C23C16/5096 , C23C16/45565 , C23C16/45587 , H01J37/3244
摘要： The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
摘要翻译：本发明通常包括从处理室中的气体分配喷头延伸的延伸部或裙部。当处理基板时，气体分配喷头可被电偏置。在某些情况下，电偏置喷头可以将处理气体点燃成等离子体状态。处理室和基座的壁可以相对于喷头接地。因此，与电偏压花洒相比，衬底的边缘可具有更大的接地触点表面积。由于边缘附近的接地增加，与衬底的中间相比，沉积在衬底上的材料可能具有不同的性质。通过将淋浴头边缘向下靠近基板延伸，可以获得材料的基本均匀的特性。

3. 发明申请

WO2010065473A3 GAS DISTRIBUTION BLOCKER APPARATUS 审中-公开
标题翻译：燃气分配阻塞装置
公开(公告)号：WO2010065473A3
公开(公告)日：2010-08-19
申请号：PCT/US2009066145
申请日：2009-11-30
申请人： APPLIED MATERIALS INC , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/45559 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
摘要翻译：本发明的实施例通常提供用于改变在处理腔室的喷头上供应的处理气体的流动和压差的装置和方法，以在设置于其中的基板的表面上提供改善的沉积均匀性。在一个实施例中，阻挡板布置在背板和喷头之间。在一个实施例中，阻挡板和喷头之间的距离是可调的。在另一个实施例中，阻挡板具有非平面表面轮廓。在另一个实施例中，区域阻挡板设置在背板和喷头之间。在另一个实施例中，中心阻挡板和外围阻挡板设置在背板和喷头之间。

4. 发明申请

WO2010048165A3 MULTIPLE GAS FEED APPARATUS AND METHOD 审中-公开
标题翻译：多种气体送料装置及方法
公开(公告)号：WO2010048165A3
公开(公告)日：2010-08-12
申请号：PCT/US2009061303
申请日：2009-10-20
申请人： APPLIED MATERIALS INC , TSO ALAN , TSUEI LUN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： TSO ALAN , TSUEI LUN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574
摘要： Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source.
摘要翻译：本发明的实施例通常提供用于将处理气体引入多个位置处的处理室中的装置和方法。在一个实施例中，喷头的中心区域和喷头的拐角区域从中心气体源供给处理气体，第一质量流量控制器调节中心区域中的流动，第二质量流量控制器调节角落中的流动区域。在另一个实施例中，喷头的中心区域从第一气体源供给工艺气体，并且喷头的拐角区域从第二气体源供给工艺气体。在另一个实施例中，喷头的中心区域从第一气体源供给工艺气体，喷头的每个拐角区域从单独的气体源供给工艺气体。

5. 发明申请

WO2010051233A2 ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
标题翻译：可调式燃气分配装置
公开(公告)号：WO2010051233A2
公开(公告)日：2010-05-06
申请号：PCT/US2009061893
申请日：2009-10-23
申请人： APPLIED MATERIALS INC , ZHANG LIN , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： ZHANG LIN , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32935 , C23C16/45565 , C23C16/45589 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.
摘要翻译：本发明的实施例一般提供用于改变处理室内的气体分配板的轮廓而不破坏室内的真空条件的设备和方法。在一个实施例中，调节中央支撑装置以相对于气体分配板的周边改变气体分配板的中心区域的高度。在另一个实施例中，调节多个中央支撑装置以改变气体分配板的中心区域相对于板的周边的高度。在又一个实施例中，调节多个中央支撑装置和多个中档支撑装置以改变气体分配板的某些区域相对于气体分配板的其他区域的高度。在一个实施例中，气体分配板的轮廓基于在处理室内检测到的变化而改变。

6. 发明申请

WO2011028349A2 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
标题翻译：含硅薄膜沉积的远离氢等离子体源
公开(公告)号：WO2011028349A2
公开(公告)日：2011-03-10
申请号：PCT/US2010044133
申请日：2010-08-02
申请人： APPLIED MATERIALS INC , YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
发明人： YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
IPC分类号： H01L21/205 , H01L21/336 , H01L31/042
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/452 , C23C16/505 , H01J37/32357 , H01J37/32449 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
摘要翻译：提供了用于在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。在一个实施例中，用于在衬底上形成含硅层的方法包括将衬底提供到处理室中，将具有含硅气体的气体混合物提供到处理室中，从远程等离子体源提供含氢气体，处理室，向处理室施加小于17.5mWatt / cm 2的RF功率，以及在衬底上形成含硅层。

7. 发明申请

WO2011008805A3 PROCESSING CHAMBER WITH TRANSLATING WEAR PLATE FOR LIFT PIN 审中-公开
标题翻译：带升降磨损板的升降室
公开(公告)号：WO2011008805A3
公开(公告)日：2011-05-05
申请号：PCT/US2010041895
申请日：2010-07-14
申请人： APPLIED MATERIALS INC , WHITE JOHN M , OH JEONGHOON , CHO TOM K , JAMES SILJA , PAI UDAY , LOPEZ OSCAR , POLYAK ALEXANDER S
发明人： WHITE JOHN M , OH JEONGHOON , CHO TOM K , JAMES SILJA , PAI UDAY , LOPEZ OSCAR , POLYAK ALEXANDER S
IPC分类号： H01L21/68 , G02F1/13 , H01L21/02 , H01L21/683
CPC分类号： H01L21/68742
摘要： Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.
摘要翻译：提供了用于处理包括平移磨损板和/或衬套组件的大面积衬底的方法和装置的实施例，用于减小用于在衬底支撑件上在处理室或其他类型的室中间隔衬底的提升销上的应力。在另一个实施例中，一种用于处理基板的装置包括处理室，该处理室包括设置在室体中的基板支撑件衬套组件设置在衬底支撑件中。升降销穿过套管组件布置。提供磨损板，该磨损板联接到腔体并与升降销对齐。耐磨板可相对于腔室主体的中心线横向移动，以在接触耐磨板时适应提升销的横向运动。

8. 发明申请

WO2011009007A2 IMPROVED LIFT PIN GUIDES 审中-公开
标题翻译：改进的提升引脚指南
公开(公告)号：WO2011009007A2
公开(公告)日：2011-01-20
申请号：PCT/US2010042199
申请日：2010-07-15
申请人： APPLIED MATERIALS INC , PAI UDAY , LOPEZ OSCAR , OH JEONGHOON , CHO TOM K , WHITE JOHN M , JAMES SILJA , POLYAK ALEXANDER S
发明人： PAI UDAY , LOPEZ OSCAR , OH JEONGHOON , CHO TOM K , WHITE JOHN M , JAMES SILJA , POLYAK ALEXANDER S
IPC分类号： H01L21/68 , G02F1/13 , H01L21/205
CPC分类号： H01L21/68742 , C23C14/50 , C23C16/4586
摘要： Lift pin guides include bearing elements with rollers having liners comprised of a material that provides both self lubrication and cushioning in order to prevent lift pin binding and extend the life of the lift pins and the lift pin guides. In one embodiment, each lift pin guide includes an upper bearing element near the upper surface of a substrate support and a lower bearing element disposed a distance beneath the substrate support in order to reduce stresses experienced by the lift pin. The lift pin guides may be used in a vacuum deposition chamber adapted to deposit materials onto substrates to form electronic devices such as thin film transistors, organic light emitting diodes, photovoltaic devices or solar cells, including chemical vapor deposition chambers and physical vapor deposition chambers. The lift pin guides may also be used in load lock chambers, etching chambers or other applications where lift pins are utilized.
摘要翻译：升降销引导件包括具有滚子的轴承元件，滚子具有由既提供自润滑又提供缓冲的材料组成的衬垫，以防止提升销结合并延长提升销和提升销引导件的寿命。在一个实施例中，每个提升销引导件包括靠近衬底支撑件的上表面的上支撑元件和布置在衬底支撑件下方一段距离处的下支撑元件，以便减少提升销所经受的应力。提升销引导件可以用于真空沉积室中，该真空沉积室适于将材料沉积到基底上以形成电子装置，例如薄膜晶体管，有机发光二极管，光伏装置或太阳能电池，包括化学气相沉积室和物理气相沉积室。升降杆引导件也可用于负载锁定室，蚀刻室或使用升降杆的其他应用场合。

9. 发明申请

WO2011017226A2 COMPOUND LIFT PIN TIP WITH TEMPERATURE COMPENSATED ATTACHMENT FEATURE 审中-公开
标题翻译：具有温度补偿附件功能的复合提升针尖
公开(公告)号：WO2011017226A2
公开(公告)日：2011-02-10
申请号：PCT/US2010043956
申请日：2010-07-30
申请人： APPLIED MATERIALS INC , POLYAK ALEXANDER S , CHO TOM K , GOMEZ OSCAR
发明人： POLYAK ALEXANDER S , CHO TOM K , GOMEZ OSCAR
IPC分类号： H01L21/68 , G02F1/13 , H01L21/683
CPC分类号： C23C16/4586 , H01L21/68742
摘要： A method and apparatus for a lift pin is described. In one embodiment, a lift pin head is described. The lift pin head includes a base member having a body made of a first material having a first coefficient of thermal expansion, and a tip disposed on the base member, the base member having a body made of a second material that is flexible at room temperature and having a second coefficient of thermal expansion, the first coefficient of thermal expansion being less than the second coefficient of thermal expansion.
摘要翻译：描述了用于升降销的方法和装置。在一个实施例中，描述了提升销头。提升销头包括具有由具有第一热膨胀系数的第一材料制成的主体的基座构件和设置在基座构件上的尖端，所述基座构件具有由在室温下是柔性的第二材料制成的主体并且具有第二热膨胀系数，所述第一热膨胀系数小于所述第二热膨胀系数。

10. 发明申请

WO2010081003A2 SYSTEMS, APPARATUS AND METHODS FOR MOVING SUBSTRATES 审中-公开
标题翻译：用于移动基板的系统，装置和方法
公开(公告)号：WO2010081003A2
公开(公告)日：2010-07-15
申请号：PCT/US2010020503
申请日：2010-01-08
申请人： APPLIED MATERIALS INC , CHINTALAPATI PRUDHVI R , SUNDAR SATISH , AXELROD BORIS , SILVETTI MARIO DAVE , CHO TOM K , BRODINE JAFFREY A , FOSTER JASON K , NG EDWARD
发明人： CHINTALAPATI PRUDHVI R , SUNDAR SATISH , AXELROD BORIS , SILVETTI MARIO DAVE , CHO TOM K , BRODINE JAFFREY A , FOSTER JASON K , NG EDWARD
IPC分类号： H01L21/677 , B25J15/08 , B65G49/07
CPC分类号： H01L21/67742 , H01L21/68707
摘要： Systems, methods and apparatus are provided for moving substrates in electronic device manufacturing. In some aspects, end effectors having a base portion and at least three pads are provided. Each of the pads has a contact surface, and at least one of the contact surfaces has a curved shape. A substrate supported by the end effector may be moved at a relatively high lateral g-force without significant slipping relative to the pads. Additional aspects are provided.
摘要翻译：提供了用于在电子设备制造中移动基板的系统，方法和装置。在一些方面，提供具有基部和至少三个垫的末端执行器。每个垫具有接触表面，并且至少一个接触表面具有弯曲的形状。由端部执行器支撑的衬底可以以相对较高的横向g力移动，而不会相对于衬垫显着滑动。还提供了其他方面。

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