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1. 发明申请

WO2011028349A2 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
标题翻译：含硅薄膜沉积的远离氢等离子体源
公开(公告)号：WO2011028349A2
公开(公告)日：2011-03-10
申请号：PCT/US2010044133
申请日：2010-08-02
申请人： APPLIED MATERIALS INC , YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
发明人： YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
IPC分类号： H01L21/205 , H01L21/336 , H01L31/042
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/452 , C23C16/505 , H01J37/32357 , H01J37/32449 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
摘要翻译：提供了用于在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。在一个实施例中，用于在衬底上形成含硅层的方法包括将衬底提供到处理室中，将具有含硅气体的气体混合物提供到处理室中，从远程等离子体源提供含氢气体，处理室，向处理室施加小于17.5mWatt / cm 2的RF功率，以及在衬底上形成含硅层。

2. 发明申请

WO2010065473A3 GAS DISTRIBUTION BLOCKER APPARATUS 审中-公开
标题翻译：燃气分配阻塞装置
公开(公告)号：WO2010065473A3
公开(公告)日：2010-08-19
申请号：PCT/US2009066145
申请日：2009-11-30
申请人： APPLIED MATERIALS INC , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/45559 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
摘要翻译：本发明的实施例通常提供用于改变在处理腔室的喷头上供应的处理气体的流动和压差的装置和方法，以在设置于其中的基板的表面上提供改善的沉积均匀性。在一个实施例中，阻挡板布置在背板和喷头之间。在一个实施例中，阻挡板和喷头之间的距离是可调的。在另一个实施例中，阻挡板具有非平面表面轮廓。在另一个实施例中，区域阻挡板设置在背板和喷头之间。在另一个实施例中，中心阻挡板和外围阻挡板设置在背板和喷头之间。

3. 发明申请

WO2010048165A3 MULTIPLE GAS FEED APPARATUS AND METHOD 审中-公开
标题翻译：多种气体送料装置及方法
公开(公告)号：WO2010048165A3
公开(公告)日：2010-08-12
申请号：PCT/US2009061303
申请日：2009-10-20
申请人： APPLIED MATERIALS INC , TSO ALAN , TSUEI LUN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： TSO ALAN , TSUEI LUN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574
摘要： Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source.
摘要翻译：本发明的实施例通常提供用于将处理气体引入多个位置处的处理室中的装置和方法。在一个实施例中，喷头的中心区域和喷头的拐角区域从中心气体源供给处理气体，第一质量流量控制器调节中心区域中的流动，第二质量流量控制器调节角落中的流动区域。在另一个实施例中，喷头的中心区域从第一气体源供给工艺气体，并且喷头的拐角区域从第二气体源供给工艺气体。在另一个实施例中，喷头的中心区域从第一气体源供给工艺气体，喷头的每个拐角区域从单独的气体源供给工艺气体。

4. 发明申请

WO2010051233A2 ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
标题翻译：可调式燃气分配装置
公开(公告)号：WO2010051233A2
公开(公告)日：2010-05-06
申请号：PCT/US2009061893
申请日：2009-10-23
申请人： APPLIED MATERIALS INC , ZHANG LIN , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： ZHANG LIN , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32935 , C23C16/45565 , C23C16/45589 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.
摘要翻译：本发明的实施例一般提供用于改变处理室内的气体分配板的轮廓而不破坏室内的真空条件的设备和方法。在一个实施例中，调节中央支撑装置以相对于气体分配板的周边改变气体分配板的中心区域的高度。在另一个实施例中，调节多个中央支撑装置以改变气体分配板的中心区域相对于板的周边的高度。在又一个实施例中，调节多个中央支撑装置和多个中档支撑装置以改变气体分配板的某些区域相对于气体分配板的其他区域的高度。在一个实施例中，气体分配板的轮廓基于在处理室内检测到的变化而改变。

5. 发明申请

WO2010065474A3 MODULATION OF RF RETURNING STRAPS FOR UNIFORMITY CONTROL 审中-公开
标题翻译： RF均匀性控制回归带的调整
公开(公告)号：WO2010065474A3
公开(公告)日：2010-08-12
申请号：PCT/US2009066147
申请日：2009-11-30
申请人： APPLIED MATERIALS INC , TSO ALAN , HOFFMAN DANIEL J , TANAKA TSUTOMU TOM , TAYLOR WILLIAM NIXON JR , WANG RONGPING , WHITE JOHN M
发明人： TSO ALAN , HOFFMAN DANIEL J , TANAKA TSUTOMU TOM , TAYLOR WILLIAM NIXON JR , WANG RONGPING , WHITE JOHN M
IPC分类号： H01L21/205 , H05H1/36
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32183
摘要： Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof.
摘要翻译：本发明的实施例总体上涉及使用等离子体处理衬底的方法和装置。更具体地说，本发明的实施例提供了一种等离子体处理室，其具有耦合到多个RF返回带的电极，其中RF回程带的阻抗被设置和/或调整以调整处理期间的等离子体分布。在一个实施例中，RF返回带的阻抗通过改变RF返回带的长度，通过改变RF返回带的宽度，通过改变RF返回带的间隔，通过改变RF返回带的位置，通过添加电容器到RF返回带或通过它们的组合。

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