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1. 发明申请

WO2010123707A3 ENHANCED SCAVENGING OF RESIDUAL FLUORINE RADICALS USING SILICON COATING ON PROCESS CHAMBER WALLS 审中-公开
公开(公告)号：WO2010123707A3
公开(公告)日：2010-10-28
申请号：PCT/US2010/030700
申请日：2010-04-12
申请人： APPLIED MATERIALS, INC. , CHOI, Dongwon , LEE, Dong Hyung , POON, Tze , VELLAIKAL, Manoj , PORSHNEV, Peter , FOAD, Majeed
发明人： CHOI, Dongwon , LEE, Dong Hyung , POON, Tze , VELLAIKAL, Manoj , PORSHNEV, Peter , FOAD, Majeed
IPC分类号： H01L21/265
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

2. 发明申请

WO2008073845A1 PLASMA IMMERSED ION IMPLANTATION PROCESS 审中-公开
标题翻译：等离子体离子植入过程
公开(公告)号：WO2008073845A1
公开(公告)日：2008-06-19
申请号：PCT/US2007/086848
申请日：2007-12-07
申请人： APPLIED MATERIALS, INC. , LI, Shijian , RAMASWAMY, Kartik , GALLO, Biagio , LEE, Dong Hyung , FOAD, Majeed A.
发明人： LI, Shijian , RAMASWAMY, Kartik , GALLO, Biagio , LEE, Dong Hyung , FOAD, Majeed A.
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子混合物进入底物。在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到室中，以及将离子从气体混合物注入到衬底中。

3. 发明申请

WO2011031521A2 METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN 审中-公开
标题翻译：清洗室内原位清洗后加工室的方法
公开(公告)号：WO2011031521A2
公开(公告)日：2011-03-17
申请号：PCT/US2010/046789
申请日：2010-08-26
申请人： APPLIED MATERIALS, INC. , SU, Jie , WASHINGTON, Lori , NIJHAWAN, Sandeep , KRYLIOUK, Olga , GRAYSON, Jacob , KANG, San Won , LEE, Dong Hyung , CHUNG, Hua
发明人： SU, Jie , WASHINGTON, Lori , NIJHAWAN, Sandeep , KRYLIOUK, Olga , GRAYSON, Jacob , KANG, San Won , LEE, Dong Hyung , CHUNG, Hua
IPC分类号： H01L21/302
CPC分类号： C23C16/4405 , C23C16/4404 , C23C16/45574 , H01L21/67115
摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.
摘要翻译：一种用于从处理室的内表面移除沉积产物并用于防止或减缓这种沉积产物的生长的方法和设备。向腔室提供含卤素的气体以蚀刻掉沉积产物。向腔室提供卤素清除气体以除去任何残留的卤素。卤素清除气体通常通过暴露于电磁能激活，或者通过热能在处理室内进行激活，或者通过电场，UV或者微波在远程室进行。可以将沉积前体添加到卤素清除气体中以在腔室的内表面上形成抗沉积膜。另外或者可选地，可以通过在PVD工艺中将抗沉积金属溅射到处理室的内部部件上来形成抗沉积膜。

4. 发明申请

WO2010038917A1 OIL MIST DETECTING APPARATUS 审中-公开
标题翻译：油雾检测仪
公开(公告)号：WO2010038917A1
公开(公告)日：2010-04-08
申请号：PCT/KR2008/006016
申请日：2008-10-13
申请人： KWANGSAN CO., LTD. , KIM, Hong Soon , KANG, Bu Nyung , KIM, In Dong , LEE, Dong Hyung , LEE, Jin Woo , SEOH, Sang Won , MOON, Byung Chun , PARK, Ju Won
发明人： KIM, Hong Soon , KANG, Bu Nyung , KIM, In Dong , LEE, Dong Hyung , LEE, Jin Woo , SEOH, Sang Won , MOON, Byung Chun , PARK, Ju Won
IPC分类号： G01N21/88
CPC分类号： G01N21/85 , G01N21/15
摘要： Disclosed herein is an oil mist detecting apparatus. The oil mist detecting apparatus includes a body connected to a control unit, and provided with an engagement portion which is engaged with an installation hole formed in the crankcase; a detection tube attached to the body at one end thereof, provided with a light transmitting window fixedly installed in an inner portion thereof adjacent to the engagement portion, and provided with a plurality of oil mist holes; a cleaner pad configured to clean the light transmitting window; a main shaft connected to the cleaner pad and configured to enable the cleaner pad to be rotated; a light emitting unit disposed adjacent to the light transmitting window, and configured to send light into the detection tube; and a light receiving unit disposed adjacent to the light emitting unit, and configured to detect light scattered because of collision with the oil mist.
摘要翻译：这里公开了一种油雾检测装置。油雾检测装置包括与控制单元连接的主体，并且设置有与形成在曲轴箱中的安装孔接合的接合部; 检测管在其一端附接到主体，设置有固定地安装在其邻近接合部的内部的透光窗，并且设置有多个油雾孔; 清洁器衬垫，其构造成清洁透光窗; 连接到所述清洁器垫并构造成使所述清洁器垫能够旋转的主轴; 发光单元，邻近所述透光窗设置，并被配置为将光发射到所述检测管中; 以及与所述发光单元相邻设置的光接收单元，被配置为检测由于与所述油雾的碰撞而散射的光。

5. 发明申请

WO2007083936A1 INFORMATION PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：信息处理方法和装置
公开(公告)号：WO2007083936A1
公开(公告)日：2007-07-26
申请号：PCT/KR2007/000307
申请日：2007-01-19
申请人： KIM, Hyung Nam , WON, Yong Soo , LEE, Dong Hyung
发明人： KIM, Hyung Nam , WON, Yong Soo , LEE, Dong Hyung
IPC分类号： H04B1/40
CPC分类号： H04M1/274558 , H04M1/274508
摘要： The present invention relates to a method and apparatus for processing information. According to an embodiment of the present invention, at least one information field enabling characters, present in an input string input to perform a search operation, to be stored is selected from among a plurality of information fields related to a phone number. At least one entry related to the character string is searched for in the selected information field, and at least one found entry is displayed. According to an embodiment, characters can be classified into numbers, English alphabet letters, and Korean alphabet letters depending on the range of values of a converted character code. Further, according to an embodiment, a search sequence can be determined depending on the types of characters. Therefore, the user can quickly search for desired information with the minimum possible manipulation.
摘要翻译：本发明涉及一种处理信息的方法和装置。根据本发明的实施例，从与电话号码相关的多个信息字段中选择能够存储的存在于输入串输入中以执行搜索操作的字符的至少一个信息字段。在所选择的信息字段中搜索与字符串相关的至少一个条目，并且显示至少一个找到的条目。根据一个实施例，字符可以根据转换的字符代码的值的范围分为数字，英文字母和韩文字母。此外，根据实施例，可以根据字符的类型来确定搜索序列。因此，用户可以用尽可能少的操纵快速搜索所需的信息。

6. 发明申请

WO2009136674A1 FLAME ARRESTER 审中-公开
标题翻译：火焰报警器
公开(公告)号：WO2009136674A1
公开(公告)日：2009-11-12
申请号：PCT/KR2008/002803
申请日：2008-05-20
申请人： KWANGSAN CO., LTD. , KIM, Hong Soon , KANG, Bu Nyung , LEE, Dong Hyung , LEE, Jin Woo , LEE, Jeong Yeob , JANG, Byoung Woo
发明人： KIM, Hong Soon , KANG, Bu Nyung , LEE, Dong Hyung , LEE, Jin Woo , LEE, Jeong Yeob , JANG, Byoung Woo
IPC分类号： F02B77/10
CPC分类号： F02B77/10 , A62C4/00
摘要： The present invention relates to a flame arrester for internal combustion engines, which is installed in a port of a crank case of a main engine and a sub-engine of a ship or another vehicle. In the flame arrester of the present invention, a plurality of embossments of a flame arresting unit, which is formed by layering a plurality of metal strips for arresting flame belching from the crank case, are circumferentially placed such that they are inclined relative to a radial axis of the flame arresting unit, thus increasing the flame transferring distance and flame heat dissipating and cooling surface area, and realizing exclusion of oxygen, thereby efficiently arresting flame.
摘要翻译：本发明涉及一种用于内燃机的阻火器，其安装在船舶或其他车辆的主发动机和副发动机的曲轴箱的端口中。在本发明的阻火器中，通过分层多个用于阻止来自曲轴箱的火焰打击的金属带形成的多个火焰止动单元的凸起被周向地放置成使得它们相对于径向从而增加火焰传播距离和火焰散热和冷却表面积，实现排除氧气，从而有效地阻止火焰。

7. 发明公开

EP2422359A2 ENHANCED SCAVENGING OF RESIDUAL FLUORINE RADICALS USING SILICON COATING ON PROCESS CHAMBER WALLS 审中-公开
标题翻译： REST FLUOR自由基的增强吸收利用硅涂装工艺室壁
公开(公告)号：EP2422359A2
公开(公告)日：2012-02-29
申请号：EP10767519.1
申请日：2010-04-12
申请人： Applied Materials, Inc.
发明人： CHOI, Dongwon , LEE, Dong Hyung , POON, Tze , VELLAIKAL, Manoj , PORSHNEV, Peter , FOAD, Majeed
IPC分类号： H01L21/265
CPC分类号： H01J37/32467 , C23C16/4404 , H01J37/32412 , H01J37/3244 , H01J37/32449 , H01J37/32477 , H01J37/32862 , H01J37/32871 , H01L21/2236
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

8. 发明申请

WO2022026257A1 HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM 审中-公开
公开(公告)号：WO2022026257A1
公开(公告)日：2022-02-03
申请号：PCT/US2021/042466
申请日：2021-07-21
申请人： APPLIED MATERIALS, INC.
发明人： PRASAD, Rajesh , BOBEK, Sarah , KULSHRESHTHA, Prashant Kumar , LEE, Kwangduk Douglas , WHITESELL, Harry , OSHIO, Hidetaka , LEE, Dong Hyung , RAJ MITTAL, Deven Matthew , FALK, Scott , CHAVVA, Venkataramana R.
IPC分类号： H01L21/033 , C23C16/505 , C23C16/26 , C23C16/56 , H01L21/311 , H01L21/02 , H01L21/3115
摘要： Methods and techniques for deposition of amorphous carbon films on a substrate are provided, In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

9. 发明申请

WO2019199822A3 RESOLVING SPONTANEOUS ARCING DURING THICK FILM DEPOSITION OF HIGH TEMPERATURE AMORPHOUS CARBON DEPOSITION 审中-公开
公开(公告)号：WO2019199822A3
公开(公告)日：2019-10-17
申请号：PCT/US2019/026576
申请日：2019-04-09
申请人： APPLIED MATERIALS, INC.
发明人： XU, Lu , KWON, Byung Seok , KALSEKAR, Viren , PRABHAKAR, Vinay K. , KULSHRESHTHA, Prashant Kumar , LEE, Dong Hyung , LEE, Kwangduk Douglas
IPC分类号： C23C16/458 , C23C16/505 , H01J37/32
摘要： Embodiments of the present invention generally relate to an apparatus for reducing arcing during thick film deposition in a plasma process chamber. In one embodiment, an edge ring including an inner edge diameter that is about 0.28 inches to about 0.38 inches larger than an outer diameter of a substrate is utilized when depositing a thick (greater than two microns) layer on the substrate. The layer may be a dielectric layer, such as a carbon hard mask layer, for example an amorphous carbon layer. With the 0.14 inches to 0.19 inches gap between the outer edge of substrate and the inner edge of the edge ring during the deposition of the thick layer, substrate support surface arcing is reduced while the layer thickness uniformity is maintained.

10. 发明申请

WO2022251161A1 TREATMENT FOR HIGH-TEMPERATURE CLEANS 审中-公开
公开(公告)号：WO2022251161A1
公开(公告)日：2022-12-01
申请号：PCT/US2022/030649
申请日：2022-05-24
申请人： APPLIED MATERIALS, INC.
发明人： BOBEK, Sarah Michelle , HUANG, Ruiyun , KHAJA, Abdul Aziz , BANSAL, Amit , LEE, Dong Hyung , BALASUBRAMANIAN, Ganesh , NGUYEN, Tuan Anh , HA, Sungwon , PATEL, Anjana M. , LIMDULPAIBOON, Ratsamee , JANAKIRAMAN, Karthik , LEE, Kwangduk Douglas
IPC分类号： C23C16/44 , C23C16/40 , C23C16/50 , H01J37/32
摘要： Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

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