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1. 发明申请

WO2018102368A1 SPEAKER ADAPTATION WITH VOLTAGE-TO-EXCURSION CONVERSION 审中-公开
公开(公告)号：WO2018102368A1
公开(公告)日：2018-06-07
申请号：PCT/US2017/063635
申请日：2017-11-29
申请人： CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD. , HU, Rong , NAPOLI, Roberto , SU, Jie
发明人： HU, Rong , NAPOLI, Roberto , SU, Jie
IPC分类号： H04R3/00 , H04R29/00
摘要： A speaker model may implement a direct voltage-to-excursion model in an adaptive filter for modeling the speaker without developing a first electrical-only model and then converting the model to a mechanical model. The voltage-to-excursion model may allow for modeling of different kinds of speakers, such as sealed, ported, or vented speakers. A transfer function may be developed in the adaptive filter for the voltage-to-excursion model, and that transfer function re-used for prediction of excursion values based on an audio signal. Speaker protection may be performed to take steps to prevent speaker damage when a predicted excursion value exceeds safe limits. The voltage-to-excursion model may operate in displacement or displacement-related domains (e.g., velocity and back emf).

2. 发明申请

WO2012173824A3 ENHANCED MAGNESIUM INCORPORATION INTO GALLIUM NITRIDE FILMS THROUGH HIGH PRESSURE OR ALD-TYPE PROCESSING 审中-公开
公开(公告)号：WO2012173824A3
公开(公告)日：2012-12-20
申请号：PCT/US2012/040948
申请日：2012-06-05
申请人： APPLIED MATERIALS, INC. , SU, Jie , LU, Jiang , CHUNG, Hua , HSU, Wei-Yung , BOUR, David
发明人： SU, Jie , LU, Jiang , CHUNG, Hua , HSU, Wei-Yung , BOUR, David
IPC分类号： H01L21/318 , H01L21/205
摘要： Enhanced magnesium incorporation into gallium nitride films through high pressure or ALD-type processing is described. In an example, a method of fabricating a group ΙII-nitride film includes flowing a group IIΙ precursor, a nitrogen precursor, and a p-type dopant precursor into a reaction chamber having a substrate therein. A p- type doped group ΙII-nitride layer is formed in the reaction chamber, above the substrate, while a total pressure in the reaction chamber is approximately in the range of 300 - 760 Torr.

3. 发明申请

WO2012021321A3 COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY 审中-公开
标题翻译：用于直接加热和增加温度均匀性的复合基材
公开(公告)号：WO2012021321A3
公开(公告)日：2012-06-28
申请号：PCT/US2011046116
申请日：2011-08-01
申请人： APPLIED MATERIALS INC , SU JIE , OLGADO DONALD J K , KUTNEY MICHAEL C
发明人： SU JIE , OLGADO DONALD J K , KUTNEY MICHAEL C
IPC分类号： H01L21/205 , H01L21/683
CPC分类号： F27B17/0025 , C23C16/4586 , C23C16/46 , C30B23/063 , C30B25/105 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate.
摘要翻译：本发明的实施例一般涉及用于均匀加热衬底的装置和方法。该装置包括具有至少一个电极和介电涂层的可转移圆盘。可转移的圆盘可以相对于基板偏压组件偏置，并且在制造过程中独立于偏置组件传递，同时保持相对于基板的偏压。圆盘吸收来自热源的辐射热，并将热量均匀地传导到耦合到冰球的基底。圆盘具有高辐射率和高导热性，用于吸收并将辐射热传递到基底。高导热性允许跨基板的均匀温度分布，从而增加沉积均匀性。该方法包括将光吸收材料设置在光学透明基板上，并且用辐射热源辐射光吸收材料以加热光学透明基板。

4. 发明申请

WO2011123291A2 FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER 审中-公开
标题翻译：形成一个包含核心层的化合物 - 硝酸盐结构
公开(公告)号：WO2011123291A2
公开(公告)日：2011-10-06
申请号：PCT/US2011/029463
申请日：2011-03-22
申请人： APPLIED MATERIALS, INC. , SU, Jie
发明人： SU, Jie
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/007 , C23C16/301 , C23C16/303 , C23C16/54 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： The present invention generally provides apparatus and methods for forming LED structures. In one embodiment where a sapphire substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber while a separate processing chamber, such as a PVD, MOCVD, CVD, or ALD chamber, may be used to grow buffer layers on the sapphire substrate at lower growth rate. The buffer layer may be GaN, AlN, AlGaN, InGaN, or InAlGaN. In another embodiment where a silicon-based substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber in which an Al-free environment is provided while a separate processing chamber with a Ga-free environment is used to grow a Ga-free buffer layer, such as Al, AlN, or SiN, on the silicon-based substrate. The separate processing chamber may be a PVD, CVD, MOCVD, a plasma assisted MOCVD, or other vapor phase deposition techniques.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。在选择蓝宝石衬底的一个实施例中，本体III族氮化物的生长可以沉积在HVPE或MOCVD室中，而可以使用诸如PVD，MOCVD，CVD或ALD室的单独的处理室来以较低的生长速率在蓝宝石衬底上生长缓冲层。缓冲层可以是GaN，AlN，AlGaN，InGaN或InAlGaN。在选择硅基衬底的另一个实施方案中，本体III族氮化物的生长可以沉积在其中提供无Al环境的HVPE或MOCVD室中，而具有无Ga的环境的单独的处理室是用于在硅基衬底上生长诸如Al，AlN或SiN之类的无Ga缓冲层。分离的处理室可以是PVD，CVD，MOCVD，等离子体辅助MOCVD或其它气相沉积技术。

5. 发明申请

WO2011106215A2 GROWTH OF GROUP III-V MATERIAL LAYERS BY SPATIALLY CONFINED EPITAXY 审中-公开
标题翻译：第III-V组材料层的增长由空间限制的外延
公开(公告)号：WO2011106215A2
公开(公告)日：2011-09-01
申请号：PCT/US2011/025063
申请日：2011-02-16
申请人： APPLIED MATERIALS, INC. , SU, Jie , KRYLIOUK, Olga
发明人： SU, Jie , KRYLIOUK, Olga
IPC分类号： H01L33/20 , H01L33/16 , H01L21/20
CPC分类号： H01L21/02502 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/0265
摘要： Techniques for crack- free growth of GaN, and related, films on larger- size substrates via spatially confined epitaxy are described.
摘要翻译：描述了通过空间限制外延在大尺寸基板上无GaN生长的技术和相关的膜。

6. 发明申请

WO2011081941A3 SURFACE PASSIVATION TECHNIQUES FOR CHAMBER-SPLIT PROCESSING 审中-公开
标题翻译：表面钝化技术用于室内分解处理
公开(公告)号：WO2011081941A3
公开(公告)日：2011-08-25
申请号：PCT/US2010060326
申请日：2010-12-14
申请人： APPLIED MATERIALS INC , SU JIE
发明人： SU JIE
IPC分类号： H01L33/02 , H01L21/205 , H01L33/44
CPC分类号： H01L21/0254 , C23C16/18 , C23C16/20 , C23C16/56 , H01L21/0242 , H01L21/02458 , H01L21/02656 , H01L33/007
摘要： Surface passivation techniques for chamber- split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III- V material layer. The passivation layer is removed. Subsequently, a second Group III-V material layer is formed above the first Group III- V material layer.
摘要翻译：描述了室分裂处理的表面钝化技术。一种方法包括在衬底上形成第一III-V族材料层，第一III-V族材料层具有顶面。钝化层沉积在III-V族材料层的顶表面上。钝化层被去除。随后，在第一III-V族材料层上方形成第二III-V族材料层。

7. 发明申请

WO2011031521A2 METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN 审中-公开
标题翻译：清洗室内原位清洗后加工室的方法
公开(公告)号：WO2011031521A2
公开(公告)日：2011-03-17
申请号：PCT/US2010/046789
申请日：2010-08-26
申请人： APPLIED MATERIALS, INC. , SU, Jie , WASHINGTON, Lori , NIJHAWAN, Sandeep , KRYLIOUK, Olga , GRAYSON, Jacob , KANG, San Won , LEE, Dong Hyung , CHUNG, Hua
发明人： SU, Jie , WASHINGTON, Lori , NIJHAWAN, Sandeep , KRYLIOUK, Olga , GRAYSON, Jacob , KANG, San Won , LEE, Dong Hyung , CHUNG, Hua
IPC分类号： H01L21/302
CPC分类号： C23C16/4405 , C23C16/4404 , C23C16/45574 , H01L21/67115
摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.
摘要翻译：一种用于从处理室的内表面移除沉积产物并用于防止或减缓这种沉积产物的生长的方法和设备。向腔室提供含卤素的气体以蚀刻掉沉积产物。向腔室提供卤素清除气体以除去任何残留的卤素。卤素清除气体通常通过暴露于电磁能激活，或者通过热能在处理室内进行激活，或者通过电场，UV或者微波在远程室进行。可以将沉积前体添加到卤素清除气体中以在腔室的内表面上形成抗沉积膜。另外或者可选地，可以通过在PVD工艺中将抗沉积金属溅射到处理室的内部部件上来形成抗沉积膜。

8. 发明申请

WO2011017222A2 METHOD AND APPARATUS FOR DRY CLEANING A COOLED SHOWERHEAD 审中-公开
标题翻译：干燥清洗冷却水的方法和装置
公开(公告)号：WO2011017222A2
公开(公告)日：2011-02-10
申请号：PCT/US2010043940
申请日：2010-07-30
申请人： APPLIED MATERIALS INC , GRIFFIN KEVIN , KRYLIOUK OLGA , SU JIE
发明人： GRIFFIN KEVIN , KRYLIOUK OLGA , SU JIE
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/45572
摘要： The present invention generally provides a method and apparatus for cleaning a showerhead of a deposition chamber, such as a metal organic chemical vapor deposition (MOCVD) chamber. In one embodiment, the showerhead is cleaned without exposing the chamber to the atmosphere outside of the chamber (i.e., in situ cleaning). In one embodiment, flow of liquid coolant through a cooling system that is in fluid communication with the showerhead is redirected to bypass the showerhead, and the liquid coolant is drained from the showerhead. In one embodiment, any remaining coolant is flushed from the showerhead via a pressurized gas source. In one embodiment, the showerhead is then heated to an appropriate cleaning temperature. In one embodiment, the flow of liquid coolant from the cooling system is then redirected to the showerhead and the system is adjusted for continued processing. Thus, the entire showerhead cleaning process is performed with minimal change to the flow of coolant through the cooling system.
摘要翻译：本发明总体上提供了一种用于清洁诸如金属有机化学气相沉积（MOCVD）室的沉积室的喷头的方法和装置。在一个实施例中，清洁喷头而不将室暴露于室外的大气（即，原位清洁）。在一个实施例中，通过与喷头流体连通的冷却系统的液体冷却剂的流动被重定向以绕过喷头，并且液体冷却剂从喷头排出。在一个实施例中，任何剩余的冷却剂经由加压气体源从喷头冲洗。在一个实施例中，然后将喷头加热到适当的清洁温度。在一个实施例中，来自冷却系统的液体冷却剂的流动然后被重定向到喷头，并且系统被调节以用于继续处理。因此，通过冷却系统的冷却剂流动的最小变化来执行整个喷头清洁过程。

9. 发明申请

WO2009099776A1 CLOSED LOOP MOCVD DEPOSITION CONTROL 审中-公开
标题翻译：闭环MOCVD沉积控制
公开(公告)号：WO2009099776A1
公开(公告)日：2009-08-13
申请号：PCT/US2009031831
申请日：2009-01-23
申请人： APPLIED MATERIALS INC , SU JIE , WASHINGTON LORI D , BOUR DAVID , GRAYSON JACOB , NIJHAWAN SANDEEP , STEVENS RONALD
发明人： SU JIE , WASHINGTON LORI D , BOUR DAVID , GRAYSON JACOB , NIJHAWAN SANDEEP , STEVENS RONALD
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： H01L21/67115 , C23C16/303 , C23C16/46 , C23C16/481 , C23C16/52 , C23C16/54 , H01L21/0254 , H01L21/0262 , H01L21/67207
摘要： A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group Ill-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group Ill-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.
摘要翻译：提供了一种用于监测和控制利用化学气相沉积和/或氢化物气相外延（HVPE）沉积的簇工具的衬底处理参数的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺将III族氮化物膜沉积在处理室内的多个衬底上。闭环控制系统执行III族氮化物膜生长速率的原位监测，并根据需要调整膜生长参数以维持目标生长速率。在另一个实施例中，闭环控制系统执行用于一个或多个成膜系统的多个处理室的膜生长参数的原位监测。

10. 发明申请

WO2008067379A2 SYSTEM AND METHOD FOR DEPOSITING A GASEOUS MIXTURE ONTO A SUBSTRATE SURFACE USING A SHOWERHEAD APPARATUS 审中-公开
标题翻译：使用淋浴器将气体混合物沉积在基底表面上的系统和方法
公开(公告)号：WO2008067379A2
公开(公告)日：2008-06-05
申请号：PCT/US2007/085763
申请日：2007-11-28
申请人： APPLIED MATERIALS, INC. , BOUR, David , WASHINGTON, Lori , NIJHAWAN, Sandeep , STEVENS, Ronald , SMITH, Jacob , TAM, Alexander , MYO, Nyi O. , PARK, Steve , TWIST, Rosemary , KWONG, Garry , SU, Jie
发明人： BOUR, David , WASHINGTON, Lori , NIJHAWAN, Sandeep , STEVENS, Ronald , SMITH, Jacob , TAM, Alexander , MYO, Nyi O. , PARK, Steve , TWIST, Rosemary , KWONG, Garry , SU, Jie
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45572 , C23C16/45574
摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.
摘要翻译：使用喷头将气体混合物沉积到基底表面上。喷头的第一增压室具有与处理室的内部流体耦合的多个通道。第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

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