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1. 发明申请

WO2008073845A1 PLASMA IMMERSED ION IMPLANTATION PROCESS 审中-公开
标题翻译：等离子体离子植入过程
公开(公告)号：WO2008073845A1
公开(公告)日：2008-06-19
申请号：PCT/US2007/086848
申请日：2007-12-07
申请人： APPLIED MATERIALS, INC. , LI, Shijian , RAMASWAMY, Kartik , GALLO, Biagio , LEE, Dong Hyung , FOAD, Majeed A.
发明人： LI, Shijian , RAMASWAMY, Kartik , GALLO, Biagio , LEE, Dong Hyung , FOAD, Majeed A.
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子混合物进入底物。在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到室中，以及将离子从气体混合物注入到衬底中。

2. 发明申请

WO2009085965A1 REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 审中-公开
标题翻译：从基板上去除表面掺杂物
公开(公告)号：WO2009085965A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/087446
申请日：2008-12-18
申请人： APPLIED MATERIALS, INC. , RAMASWAMY, Kartik , COLLINS, Kenneth S. , GALLO, Biagio , HANAWA, Hiroji , FOAD, Majeed A. , HILKENE, Martin A. , SANTHANAM, Kartik , SCOTNEY-CASTLE, Matthew D.
发明人： RAMASWAMY, Kartik , COLLINS, Kenneth S. , GALLO, Biagio , HANAWA, Hiroji , FOAD, Majeed A. , HILKENE, Martin A. , SANTHANAM, Kartik , SCOTNEY-CASTLE, Matthew D.
IPC分类号： H01L21/265 , H01L21/306
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

3. 发明申请

WO2006008543A1 METHOD OF DETERMINING DOSE UNIFORMITY OF A SCANNING ION IMPLANTER 审中-公开
标题翻译：确定扫描离子植入物剂量均匀度的方法
公开(公告)号：WO2006008543A1
公开(公告)日：2006-01-26
申请号：PCT/GB2005/002886
申请日：2005-07-22
申请人： APPLIED MATERIALS, INC. , WAGNER, Dennis, W. , GALLO, Biagio , KINDERSLEY, Peter, Torin , ABERLE, David, E. , SIMMONS, Jonathon, Yancey
发明人： WAGNER, Dennis, W. , GALLO, Biagio , KINDERSLEY, Peter, Torin , ABERLE, David, E. , SIMMONS, Jonathon, Yancey
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/31703 , Y10S438/961
摘要： Dose uniformity of a scanning ion implanter is determined. A base beam current is measured at the beginning and/or the end of a complete scan over the whole substrate area. This base beam current is measured at a time when the measurement should be unaffected by outgassing from a substrate being implanted and a base dose distribution map is then calculated for the scan in question. During the scan itself beam instability events are detected and the magnitude and position in the scan of the detected instability events is measured. Corresponding deviations in the calculated base dose map are determined and subtracted from the previously calculated base dose distribution map to provide a corrected distribution map. By determining overall dose uniformity substractively in this way, good overall accuracy can be obtained with lesser accuracy in the measurement of the beam instability events.
摘要翻译：确定扫描离子注入机的剂量均匀性。在整个基板区域的完整扫描的开始和/或结束时测量基本束电流。在测量应不受植入衬底的放气影响的时候测量该基束电流，然后对所讨论的扫描计算基础剂量分布图。在扫描本身期间，检测到不稳定性事件，并且测量检测到的不稳定事件的扫描中的幅度和位置。确定计算的基础剂量图中的相应偏差并从先前计算的基础剂量分布图中减去以提供校正分布图。通过以这种方式减小整体剂量均匀性，可以在光束不稳定性事件的测量中以更低的精度获得良好的总体精度。

4. 发明申请

WO2007019500A1 COPPER CONDUCTOR ANNEALING PROCESS EMPLOYING HIGH SPEED OPTICAL ANNEALING WITH A LOW TEMPERATURE-DEPOSITED OPTICAL ABSORBER LAYER 审中-公开
标题翻译：铜导体退火工艺采用高温光学退火与低温沉积光吸收层
公开(公告)号：WO2007019500A1
公开(公告)日：2007-02-15
申请号：PCT/US2006/030888
申请日：2006-08-07
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash, J. , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H01L21/768 , B23K26/08 , B23K26/06
CPC分类号： B23K26/0738 , B23K26/0608 , B23K26/0876 , B23K26/361 , B23K26/40 , B23K2203/172 , B23K2203/50 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76886
摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.
摘要翻译：在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层比例开口，包括垂直侧壁，在第一阻挡层上沉积包含阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。该方法还包括通过以下步骤退火主导体层：（a）将来自连续波激光阵列的光引导至至少部分穿过薄膜结构延伸的光线，以及（b）相对于薄的平面薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。沉积非晶碳光吸收层的步骤包括将含碳处理气体引入反应器的反应器室中，该反应器室在反应器的处理区中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过处理区域并向衬底施加偏置电压。

5. 发明申请

WO2007019467A3 SEMICONDUCTOR SUBSTRATE PROCESS USING A LOW TEMPERATURE-DEPOSITED CARBON-CONTAINING HARD MASK 审中-公开
公开(公告)号：WO2007019467A3
公开(公告)日：2007-02-15
申请号：PCT/US2006/030792
申请日：2006-08-07
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash, J. , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H01L21/027 , H01L21/033 , H01L21/3213 , C23C16/26 , C23C16/507 , H01L21/311
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

6. 发明申请

WO2006124967A2 LOW TEMPERATURE PLASMA DEPOSITION PROCESS FOR CARBON LAYER DEPOSITION 审中-公开
标题翻译：低温等离子体沉积碳沉积过程
公开(公告)号：WO2006124967A2
公开(公告)日：2006-11-23
申请号：PCT/US2006/019029
申请日：2006-05-16
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H01L21/31
CPC分类号： C23C16/26 , C23C16/505 , C23C16/52 , H01L21/268 , H01L21/3146
摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.
摘要翻译：在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳处理气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

7. 发明申请

WO2007019455A2 COPPER BARRIER REFLOW PROCESS EMPLOYING HIGH SPEED OPTICAL ANNEALING 审中-公开
标题翻译：使用高速光学退火的铜阻挡反射过程
公开(公告)号：WO2007019455A2
公开(公告)日：2007-02-15
申请号：PCT/US2006/030746
申请日：2006-08-07
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash, J. , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76843 , H01L21/76864 , H01L21/76873
摘要： A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the Line of light relative to the thin film structure in a direction transverse to the line of light.
摘要翻译：在半导体衬底上形成用于薄膜结构的阻挡层的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层纵横比开口，包括垂直侧壁，并且在第一阻挡层上沉积包含阻挡金属的金属阻挡层。该方法还包括通过（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构延伸的光线中来回流金属阻挡层，以及（b）将光线相对于薄膜薄膜结构在横向于光线的方向上。

8. 发明申请

WO2006124965A1 A SEMICONDUCTOR JUNCTION FORMATION PROCESS INCLUDING LOW TEMPERATURE PLASMA DEPOSITION OF AN OPTICAL ABSORPTION LAYER AND HIGH SPEED OPTICAL ANNEALING 审中-公开
标题翻译：一种半导体结构形成过程，包括光吸收层的低温等离子体沉积和高速光学退火
公开(公告)号：WO2006124965A1
公开(公告)日：2006-11-23
申请号：PCT/US2006/019027
申请日：2006-05-16
申请人： APPLIED MATERIALS, INC
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H01L21/04
CPC分类号： H01L21/268 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/02321 , H01L21/26513 , H01L21/3127 , H01L21/314 , H01L21/3146
摘要： A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.
摘要翻译：在工件的半导体材料中形成半导体结的方法包括在半导体材料的选定区域中的离子注入掺杂剂杂质，将光吸收材料前体气体引入到包含工件的腔室中，产生可折回的RF振荡环形等离子体电流路径，其包括通过施加RF源功率覆盖工件的工艺区域，以便在工件上沉积光吸收材料层，并对工件进行光学退火，以激活半导体材料中的掺杂剂杂质。

9. 发明申请

WO2006116577A2 ELECTROSTATIC CHUCK WITH SMART LIFT-PIN MECHANISM FOR PLASMA REACTOR 审中-公开
标题翻译：具有用于等离子体反应器的智能引脚机构的静电卡盘
公开(公告)号：WO2006116577A2
公开(公告)日：2006-11-02
申请号：PCT/US2006/015971
申请日：2006-04-26
申请人： APPLIED MATERIALS, INC.
发明人： HANAWA, Hiroji , NGUYEN, Andrew , COLLINS, Kenneth, S. , RAMASWAMY, Kartik , GALLO, Biagio , AL-BAYATI, Amir
IPC分类号： H01T23/00
CPC分类号： H01L21/68742 , H01L21/6831
摘要： A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small forms detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.
摘要翻译：用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。升降台面向销的底端，并可在与升降方向大致平行的方向上平移。小型检测器感测由提升销施加的力足够大以指示夹紧的晶片并且足够小以避免剥离晶片。大力检测器感测由提升销施加的力在足以脱扣的范围内晶圆。

10. 发明申请

WO2006124966A3 LOW TEMPERATURE ABSORPTION LAYER DEPOSITION AND HIGH SPEED OPTICAL ANNEALING SYSTEM 审中-公开
公开(公告)号：WO2006124966A3
公开(公告)日：2006-11-23
申请号：PCT/US2006/019028
申请日：2006-05-16
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： C23C16/00 , H01L21/306
摘要： An integrated system for processing a semiconductor wafer includes a toroidal source plasma reactor for depositing a heat absorbing layer, the reactor including a wafer support, a reactor chamber, an external reentrant toroidal conduit coupled to said chamber on generally opposing sides thereof, an RF source power applicator for coupling power to a section of said external reentrant conduit and a process gas source containing a heat absorbing material precursor gas. The integrated system further includes an optical annealing chamber.

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