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1. 发明申请

WO2010118266A3 USE SPECIAL ION SOURCE APPARATUS AND IMPLANT WITH MOLECULAR IONS TO PROCESS HDD (HIGH DENSITY MAGNETIC DISKS) WITH PATTERNED MAGNETIC DOMAINS 审中-公开
标题翻译：使用特殊离子源装置和分子离子注入具有图形磁场的HDD（高密度磁性磁盘）
公开(公告)号：WO2010118266A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030442
申请日：2010-04-08
申请人： APPLIED MATERIALS INC , MOFFATT STEPHEN , FOAD MAJEED A
发明人： MOFFATT STEPHEN , FOAD MAJEED A
IPC分类号： G11B5/84 , G11B5/73
CPC分类号： G11B5/855 , B82Y10/00 , G11B5/746 , H01F10/16 , H01F10/265 , H01F41/34
摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically susceptible material, and a patterned resist layer is formed over the magnetically susceptible material. Atom groups are directed toward the substrate, penetrating the resist and implanting into the magnetically susceptible layer. Thick portions of the resist prevent implantation in some areas to form a pattern of magnetic properties on the substrate. Energy and composition of the atom groups, thickness and hardness of the resist, and lattice energy of the magnetically susceptible material may all be adjusted to yield desired fragmentation and implantation of the atom groups, including in some embodiments mere impact on the surface without implanting. A protective layer and a lubricating layer are formed over the patterned magnetically susceptible layer.
摘要翻译：提供了一种用于制造磁存储介质的方法和装置。用磁敏材料涂覆结构基材，并且在磁敏感材料上形成图案化的抗蚀剂层。原子团指向衬底，穿透抗蚀剂并注入到磁敏感层中。抗蚀剂的厚部分防止在一些区域中的注入以在基底上形成磁性的图案。原子组的能量和组成，抗蚀剂的厚度和硬度以及磁敏材料的晶格能都可以被调整以产生所需的原子团的分裂和注入，包括在一些实施方案中仅仅对表面的冲击而不会进行注入。在图案化的易磁化层上形成保护层和润滑层。

2. 发明申请

WO2010123707A3 ENHANCED SCAVENGING OF RESIDUAL FLUORINE RADICALS USING SILICON COATING ON PROCESS CHAMBER WALLS 审中-公开
公开(公告)号：WO2010123707A3
公开(公告)日：2010-10-28
申请号：PCT/US2010/030700
申请日：2010-04-12
申请人： APPLIED MATERIALS, INC. , CHOI, Dongwon , LEE, Dong Hyung , POON, Tze , VELLAIKAL, Manoj , PORSHNEV, Peter , FOAD, Majeed
发明人： CHOI, Dongwon , LEE, Dong Hyung , POON, Tze , VELLAIKAL, Manoj , PORSHNEV, Peter , FOAD, Majeed
IPC分类号： H01L21/265
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

3. 发明申请

WO2010090693A3 ION IMPLANTED SUBSTRATE HAVING CAPPING LAYER AND METHOD 审中-公开
公开(公告)号：WO2010090693A3
公开(公告)日：2010-08-12
申请号：PCT/US2009/069754
申请日：2009-12-29
申请人： APPLIED MATERIALS, INC. , DEL AGUA BORNIQUEL, Jose Ignacio , POON, Tze , SCHREUTELKAMP, Robert , FOAD, Majeed
发明人： DEL AGUA BORNIQUEL, Jose Ignacio , POON, Tze , SCHREUTELKAMP, Robert , FOAD, Majeed
IPC分类号： H01L21/265
摘要： In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.

4. 发明申请

WO2010090693A2 ION IMPLANTED SUBSTRATE HAVING CAPPING LAYER AND METHOD 审中-公开
标题翻译：具有覆盖层的离子植入衬底和方法
公开(公告)号：WO2010090693A2
公开(公告)日：2010-08-12
申请号：PCT/US2009069754
申请日：2009-12-29
申请人： APPLIED MATERIALS INC , DEL AGUA BORNIQUEL JOSE IGNACIO , POON TZE , SCHREUTELKAMP ROBERT , FOAD MAJEED
发明人： DEL AGUA BORNIQUEL JOSE IGNACIO , POON TZE , SCHREUTELKAMP ROBERT , FOAD MAJEED
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01L21/324 , H01L21/7682 , H01L21/76829 , H01L21/823814
摘要： In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.
摘要翻译：在离子注入方法中，将衬底放置在处理区中，并将离子注入到衬底的区域中以形成离子注入区。多孔覆盖层沉积在离子注入区上。在退火过程中，将衬底退火以挥发至少80％的覆盖离子注入区的多孔覆盖层。中间产品包括衬底，衬底上的多个离子注入区域和覆盖离子注入区域的多孔覆盖层。

5. 发明申请

WO2010048030A3 PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS 审中-公开
公开(公告)号：WO2010048030A3
公开(公告)日：2010-07-22
申请号：PCT/US2009060868
申请日：2009-10-15
申请人： APPLIED MATERIALS INC , NALAMASU OMKARAM , VERHAVERBEKE STEVEN , FOAD MAJEED , VENKATESAN MAHALINGAM , KRISHNA NETY M
发明人： NALAMASU OMKARAM , VERHAVERBEKE STEVEN , FOAD MAJEED , VENKATESAN MAHALINGAM , KRISHNA NETY M
IPC分类号： G11B5/84 , G11B5/74
CPC分类号： G11B5/855 , B82Y10/00 , C23C14/042 , C23C14/48 , C23C14/5826 , G11B5/743 , G11B5/746 , G11B5/82
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film may be subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

6. 发明申请

WO2008077020A3 SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS 审中-公开
公开(公告)号：WO2008077020A3
公开(公告)日：2008-06-26
申请号：PCT/US2007/087894
申请日：2007-12-18
申请人： APPLIED MATERIALS, INC. , FOAD, Majeed, A. , VELLAIKAL, Manoj , SANTHANAM, Kartik
发明人： FOAD, Majeed, A. , VELLAIKAL, Manoj , SANTHANAM, Kartik
IPC分类号： G01R31/26
摘要： A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

7. 发明申请

WO2006064282A3 A METHOD OF ION IMPLANTATION TO REDUCE TRANSIENT ENHANCED DIFFUSION 审中-公开
公开(公告)号：WO2006064282A3
公开(公告)日：2006-09-21
申请号：PCT/GB2005004925
申请日：2005-12-19
申请人： APPLIED MATERIALS INC , GRAOUI HOUDA , FOAD MAJEED ALI , AL-BAYATI AMIR
发明人： GRAOUI HOUDA , FOAD MAJEED ALI , AL-BAYATI AMIR
IPC分类号： H01L21/265 , H01L21/324
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/268
摘要： A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.

8. 发明申请

WO2003081513A1 METHOD, SYSTEM AND MEDIUM FOR CONTROLLING SEMICONDUCTOR WAFER PROCESSES USING CRITICAL DIMENSION MEASUREMENTS 审中-公开
标题翻译：用于使用关键尺寸测量来控制半导体波长处理的方法，系统和介质
公开(公告)号：WO2003081513A1
公开(公告)日：2003-10-02
申请号：PCT/US2003/008513
申请日：2003-03-19
申请人： APPLIED MATERIALS, INC. , AL-BAYATI, Amir , ADIBI, Babak , FOAD, Majeed , SOMEKH, Sasson
发明人： AL-BAYATI, Amir , ADIBI, Babak , FOAD, Majeed , SOMEKH, Sasson
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L22/20 , Y10T29/41
摘要： Methods, systems, and mediums of controlling a semiconductor manufacturing process are described. The method comprises the steps of measuring at least one critical dimension of at least one device being fabricated on at least one of the plurality of wafers (703, 717), determining at least one process parameter value on the at least one measured dimension, and controlling at least one semiconductor manufacturing tool to process the at least one of the plurality of wafers based on the at least one parameter value (705). A variation in the at least one critical dimension causes undesirable variations in performance of the at least one device, and at least one process condition is directed to controlling the processing performed on the plurality of wafers. The at least one manufacturing tool includes at least one of an implanter (707, 709) tool and an annealing tool (711).
摘要翻译：描述了控制半导体制造工艺的方法，系统和介质。该方法包括以下步骤：测量在至少一个晶片（703,717）上制造的至少一个器件的至少一个临界尺寸，确定至少一个测量尺寸上的至少一个工艺参数值;以及控制至少一个半导体制造工具以基于所述至少一个参数值处理所述多个晶片中的所述至少一个晶片（705）。所述至少一个关键尺寸的变化导致所述至少一个装置的性能的不期望的变化，并且至少一个处理条件涉及控制在所述多个晶片上执行的处理。所述至少一个制造工具包括植入器（707,709）和退火工具（711）中的至少一个。

9. 发明申请

WO2012148621A4 APPARATUS AND METHODS FOR MICROWAVE PROCESSING OF SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：WO2012148621A4
公开(公告)日：2012-11-01
申请号：PCT/US2012/031140
申请日：2012-03-29
申请人： APPLIED MATERIALS, INC. , STOWELL, Michael W. , FOAD, Majeed A. , HOFMANN, Ralf , ADERHOLD, Wolfgang R. , MOFFATT, Stephen
发明人： STOWELL, Michael W. , FOAD, Majeed A. , HOFMANN, Ralf , ADERHOLD, Wolfgang R. , MOFFATT, Stephen
IPC分类号： H01L21/324
摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.

10. 发明申请

WO2011119611A3 DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE 审中-公开
标题翻译：用远离等离子体源的介质沉积
公开(公告)号：WO2011119611A3
公开(公告)日：2011-12-22
申请号：PCT/US2011029433
申请日：2011-03-22
申请人： APPLIED MATERIALS INC , HOFMANN RALF , FOAD MAJEED A
发明人： HOFMANN RALF , FOAD MAJEED A
IPC分类号： C23C14/34 , C23C14/35 , C23C14/50
CPC分类号： C23C14/3407 , C23C14/0036 , C23C14/06 , C23C14/354 , H01J37/32357 , H01J37/34 , H05H1/46 , H05H2001/4667
摘要： A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.
摘要翻译：溅射沉积系统包括真空室和等离子体源，真空室包括用于保持真空室中的真空的真空泵，用于向真空室供应处理气体的气体入口，溅射靶和在真空室内的基板保持器，到真空室并且远离溅射靶定位，等离子体源被配置为形成延伸到真空室中的高密度等离子体束。等离子体源可以包括矩形横截面源室，电磁体和射频线圈，其中矩形横截面源室和射频线圈被配置为给高密度等离子体束提供细长的卵形横截面。此外，溅射靶材的表面可以以非平面形式构造，以在基板支架上的基板表面处提供均匀的等离子体能量沉积到靶材和/或均匀的溅射沉积。溅射沉积系统可以包括等离子体扩散系统，用于整形高密度等离子体束以完全且均匀地覆盖溅射靶。

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