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    • 6. 发明公开
    • 기판처리장치
    • 基板加工设备
    • KR1020150069661A
    • 2015-06-24
    • KR1020130156058
    • 2013-12-16
    • 주성엔지니어링(주)
    • 이명진최종성하윤규
    • H01L21/205
    • 기판처리장치가개시된다. 본발명에따른기판처리장치는, 리드와제1플레이트사이의공간인확산공간에설치된제2플레이트가제1플레이트를지지하는지지부재에지지되어처지는것이방지된다. 그러면, 리드와제2플레이트사이의간격및 제2플레이트와제1플레이트사이의간격이각각균일하므로, 제2플레이트에서분사되는공정가스가균일하다. 따라서, 제1플레이트에서분사되는공정가스도더욱균일하므로, 기판에균일한막이형성되는효과가있다.
    • 公开了一种基板处理装置。 根据本发明的基板处理装置具有安装在扩散空间中的第二板,扩散空间是引导件和由支撑构件支撑的第一板之间的空间,以防止其下垂。 然后,引线和第二板之间的距离以及第二板和第一板之间的距离是均匀的,从而具有从第二板喷射的均匀的工艺气体。 因此,从第一板喷射的工艺气体可以更均匀,从而具有在基板上形成均匀的膜的效果。
    • 7. 发明公开
    • 기판 처리 장치 및 기판 처리 방법
    • 装置和处理基板的方法
    • KR1020130142972A
    • 2013-12-30
    • KR1020130087988
    • 2013-07-25
    • 주성엔지니어링(주)
    • 임재용김성국하윤규
    • H01L21/205H01L21/3065
    • H01J37/3244H01J37/32568
    • The present invention relates to a device for processing substrates and a method for processing substrates capable of minimizing damage to substrates and membranous degradation caused by plasma discharge by preventing the plasma discharge from being delivered to the substrate. The device for processing substrates according to the present invention comprises: a process chamber providing a reaction space; a substrate support unit arranged inside the process chamber and supporting the substrates; a chamber lead installed at the top of the process chamber to face the substrate support unit; first and second gas buffer spaces installed at the lower surface of the chamber lead and divided in order for first and second gases to be separately supplied; and a gas spraying module for activating and spraying the second gas to the substrates. The gas spraying module includes an earth electrode and a plasma electrode alternatively arranged to be aligned and separated from the top of the substrates. A distance between the substrate and the plasma electrode is greater than a distance between the earth electrode and the plasma electrode.
    • 本发明涉及一种用于处理衬底的器件,以及一种用于处理能够最小化对衬底的损伤的衬底的方法和通过防止等离子体放电被输送到衬底而由等离子体放电引起的膜性劣化的方法。 根据本发明的用于处理基板的装置包括:提供反应空间的处理室; 衬底支撑单元,布置在处理室内部并支撑衬底; 安装在处理室顶部以与衬底支撑单元相对的腔室引线; 第一和第二气体缓冲空间安装在腔室引线的下表面并分开,以便分开供应第一和第二气体; 以及用于将第二气体活化并喷射到基板的气体喷射模块。 气体喷射模块包括接地电极和等离子体电极,其交替地布置成与基板的顶部对准和分离。 基板和等离子体电极之间的距离大于接地电极和等离子体电极之间的距离。