专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08581293B2 Semiconductor light emitting device 有权
公开(公告)号：US08581293B2
公开(公告)日：2013-11-12
申请号：US13223877
申请日：2011-09-01
申请人： Yung Ho Ryu , Hae Yeon Hwang , Young Chul Shin
发明人： Yung Ho Ryu , Hae Yeon Hwang , Young Chul Shin
IPC分类号： H01L29/43
CPC分类号： H01L33/38 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/387 , H01L33/42 , H01L33/44 , H01L33/62
摘要： A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

2. 发明申请

US20120104449A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120104449A1
公开(公告)日：2012-05-03
申请号：US13223877
申请日：2011-09-01
申请人： Yung Ho RYU , Hae Yeon Hwang , Young Chul Shin
发明人： Yung Ho RYU , Hae Yeon Hwang , Young Chul Shin
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/387 , H01L33/42 , H01L33/44 , H01L33/62
摘要： A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.
摘要翻译：一种半导体发光器件包括：包括第一和第二区域的第一导电半导体层; 设置在所述第二区域上的有源层; 设置在所述有源层上的第二导电半导体层; 分别设置在第一和第二导电半导体层上的第一和第二电极分支; 电连接到所述第一电极分支并设置在所述第一电极分支上的第一电极焊盘; 以及电连接到第二电极分支并设置在第二电极分支上的第二电极焊盘。

3. 发明授权

US07473571B2 Method for manufacturing vertically structured light emitting diode 有权
标题翻译：制造垂直结构发光二极管的方法
公开(公告)号：US07473571B2
公开(公告)日：2009-01-06
申请号：US11541674
申请日：2006-10-03
申请人： Hae Yeon Hwang , Yung Ho Ryu , Da Mi Shim , Se Hwan Ahn
发明人： Hae Yeon Hwang , Yung Ho Ryu , Da Mi Shim , Se Hwan Ahn
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer.
摘要翻译：提供了一种制造能够容易地进行芯片分离处理的垂直结构的LED的方法。在该方法中，在具有多个器件区域和至少一个器件隔离区域的生长衬底上形成发光结构，其中，所述发光结构体具有n型覆盖层，有源层和p- 型覆盖层依次设置在生长基板上。在发光结构上形成p电极。此后，在p电极上形成第一镀层，使得它连接多个器件隔离区。在器件区域的第一镀层上形成第二镀层的图案。去除生长衬底，然后在n型覆盖层上形成n电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式