专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08310055B2 Semiconductor devices having narrow conductive line patterns and related methods of forming such semiconductor devices 有权
标题翻译：具有窄导线图形的半导体器件和形成这种半导体器件的相关方法
公开(公告)号：US08310055B2
公开(公告)日：2012-11-13
申请号：US12645820
申请日：2009-12-23
申请人： Young-ju Park , Jae-ho Min , Myeong-cheol Kim , Dong-chan Kim , Jae-hwang Sim
发明人： Young-ju Park , Jae-ho Min , Myeong-cheol Kim , Dong-chan Kim , Jae-hwang Sim
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/528 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L23/522 , H01L27/0207 , H01L27/11519 , H01L27/11531 , H01L27/11548 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods of forming semiconductor devices are provided in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using double patterning. The semiconductor device includes a plurality of conductive lines each including a first line portion and a second line portion, where the first line portion extends on a substrate in a first direction, the second line portion extends from one end of the first line portion in a second direction, and the first direction is different from the second direction; a plurality of contact pads each of which is connected with a respective conductive line of the plurality of conductive lines via the second line portion of the corresponding conductive line; and a plurality of dummy conductive lines each including a first dummy portion extending from a respective contact pad of the plurality of contact pads, in parallel with the corresponding second line portion in the second direction.
摘要翻译：提供形成半导体器件的半导体器件和方法，其中同时形成多个图案以具有不同的宽度，并且使用双重图案化来增加一些区域的图案密度。半导体器件包括多个导线，每条导线包括第一线部分和第二线部分，其中第一线部分在第一方向上在衬底上延伸，第二线部分从第一线部分的一端延伸到第二方向，第一方向与第二方向不同; 多个接触焊盘，每个接触焊盘经由相应的导线的第二线部分与多条导线的相应导线连接; 以及多个虚设导电线，每个虚设导电线包括从所述多个接触焊盘的相应的接触焊盘延伸的第一虚设部分，与所述第二方向上的对应的第二线部分平行。

2. 发明申请

US20090246966A1 Method of fine patterning semiconductor device 有权
标题翻译：精细图案化半导体器件的方法
公开(公告)号：US20090246966A1
公开(公告)日：2009-10-01
申请号：US12217782
申请日：2008-07-09
申请人： Nam-Myun Cho , Myeong-Cheol Kim , Shi-Yong Yi , Young-Hoon Song , Young-Ju Park
发明人： Nam-Myun Cho , Myeong-Cheol Kim , Shi-Yong Yi , Young-Hoon Song , Young-Ju Park
IPC分类号： H01L21/308
CPC分类号： H01L21/02118 , H01L21/02282 , H01L21/0337 , H01L21/3086 , H01L21/31058 , H01L21/312 , H01L21/32139 , H01L27/105 , H01L27/1052
摘要： For integrated circuit fabrication, at least one spacer support structure is formed in a first area over a semiconductor substrate, and a mask material is deposited on exposed surfaces of the spacer support structure and on a second area over the semiconductor substrate. A masking structure is formed on a portion of the mask material in the second area, and the mask material is patterned to form spacers on sidewalls of the spacer support structure and to form a mask pattern under the masking structure. The spacer support structure and the masking structure are comprised of respective high carbon content materials that have been spin-coated and have substantially a same etch selectivity.
摘要翻译：对于集成电路制造，在半导体衬底上的第一区域中形成至少一个间隔件支撑结构，并且掩模材料沉积在间隔件支撑结构的暴露表面上并在半导体衬底上的第二区域上。在第二区域中的掩模材料的一部分上形成掩模结构，并且掩模材料被图案化以在间隔物支撑结构的侧壁上形成间隔物，并在掩模结构下方形成掩模图案。间隔物支撑结构和掩蔽结构由已经旋涂并具有基本上相同蚀刻选择性的相应的高碳含量材料构成。

3. 发明授权

US07450092B2 Organic light-emitting device 有权
标题翻译：有机发光装置
公开(公告)号：US07450092B2
公开(公告)日：2008-11-11
申请号：US11002197
申请日：2004-12-03
申请人： Byeong Koo Kim , O Hyun Kim , Young Ju Park
发明人： Byeong Koo Kim , O Hyun Kim , Young Ju Park
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/0465 , G09G2300/0809 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2300/0876 , G09G2320/0233 , G09G2320/043
摘要： An organic light-emitting device includes a first transistor for applying a data voltage; a second transistor for applying a driving current depending on the data voltage and an initiation voltage to an organic light-emitting diode; a third transistor for generating a threshold voltage; a fourth transistor for applying an initiation voltage, the fourth transistor being connected to the third transistor; a fifth transistor for applying a power voltage; and a condenser provided between a first node connected to the third and fifth transistors and a second node connected to the first and second transistors, for maintaining the power voltage and the threshold voltage for compensation.
摘要翻译：有机发光器件包括用于施加数据电压的第一晶体管; 第二晶体管，用于根据数据电压和初始电压向有机发光二极管施加驱动电流; 用于产生阈值电压的第三晶体管; 用于施加起始电压的第四晶体管，所述第四晶体管连接到所述第三晶体管; 用于施加电源电压的第五晶体管; 以及冷凝器，设置在连接到第三和第五晶体管的第一节点和连接到第一和第二晶体管的第二节点之间，用于维持电源电压和用于补偿的阈值电压。

4. 发明授权

US06475886B2 Fabrication method of nanocrystals using a focused-ion beam 失效
标题翻译：使用聚焦离子束的纳米晶体的制造方法
公开(公告)号：US06475886B2
公开(公告)日：2002-11-05
申请号：US10025696
申请日：2001-12-26
申请人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
发明人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
IPC分类号： H01L21425
CPC分类号： C23C14/5833 , B82Y10/00 , B82Y30/00 , C23C14/5873 , C30B13/24 , C30B29/605 , H01L21/265 , Y10S977/949
摘要： Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.
摘要翻译：公开了一种形成纳米晶体的方法。在上述方法中，制备了在其上形成有金属膜或半导体膜的基板。聚焦离子束照射在金属膜或半导体膜的表面上的多个位置上，由此在聚焦离子束的焦点部分除去金属膜或半导体膜，但是在金属膜或半导体膜由于聚焦离子束的辐射效应而在聚焦离子束的重叠区域断裂，形成纳米晶体。该方法允许使用聚焦离子束容易且简单地形成几nm或更小尺寸的纳米晶体。结果，形成的纳米晶体具有能够在室温下抑制热波动现象的结合能，从而可以制造能够在室温下操作的隧道晶体管。此外，本发明在很大程度上有助于开发具有tera字节级或更高级别的存储电容的下一代超高密度存储器件。

5. 发明申请

US20140273432A1 FABRICATING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20140273432A1
公开(公告)日：2014-09-18
申请号：US13841132
申请日：2013-03-15
申请人： BYUNG-HEE KIM , Tae-Soo Kim , Seong-Ho Park , Young-Ju Park , Ju-Young Jung
发明人： BYUNG-HEE KIM , Tae-Soo Kim , Seong-Ho Park , Young-Ju Park , Ju-Young Jung
IPC分类号： H01L21/768
CPC分类号： H01L21/76816 , H01L21/31144
摘要： A semiconductor device is fabricated by forming a lower conductor in a first interlayer dielectric film. A second interlayer dielectric film is formed on the lower conductor and the first interlayer dielectric film. A first hard mask pattern is formed on the second interlayer dielectric film. The first mask pattern has a first opening extending in a first direction. A planarization layer is formed on the first hard mask pattern. A mask pattern is formed on the planarization layer. The mask pattern has a second opening extending in a second direction perpendicular to the first direction. The lower conductor is positioned under an region where the first opening and the second opening overlap. A via hole and a trench connected to the via hole is formed using the first hard mask pattern and the mask pattern. The via hole exposes an upper surface of the lower conductor.
摘要翻译：通过在第一层间电介质膜中形成下导体来制造半导体器件。第二层间电介质膜形成在下导体和第一层间电介质膜上。在第二层间电介质膜上形成第一硬掩模图案。第一掩模图案具有沿第一方向延伸的第一开口。在第一硬掩模图案上形成平坦化层。在平坦化层上形成掩模图案。掩模图案具有沿垂直于第一方向的第二方向延伸的第二开口。下导体位于第一开口和第二开口重叠的区域的下方。使用第一硬掩模图案和掩模图案形成通孔和连接到通孔的沟槽。通孔露出下导体的上表面。

6. 发明申请

US20120080723A1 FABRICATING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME METHOD 审中-公开
标题翻译：使用相同方法制作的半导体器件和半导体器件的制造方法
公开(公告)号：US20120080723A1
公开(公告)日：2012-04-05
申请号：US13213364
申请日：2011-08-19
申请人： Jin-Wook LEE , Myeong-Cheol Kim , Sang-Min Lee , Young-Ju Park , Hyung-Yong Kim , Myung-Hoon Jung
发明人： Jin-Wook LEE , Myeong-Cheol Kim , Sang-Min Lee , Young-Ju Park , Hyung-Yong Kim , Myung-Hoon Jung
IPC分类号： H01L21/336 , H01L21/28 , H01L29/78 , H01L21/3065
CPC分类号： H01L29/7848 , H01L21/26506 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L21/823807 , H01L21/823814 , H01L27/11 , H01L29/66636 , H01L29/78
摘要： A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.
摘要翻译：半导体器件的制造方法包括提供具有第一区域和第二区域的衬底，在衬底的第一区域中形成多个第一栅极，使得第一栅极以第一间距相互间隔开，在所述衬底的所述第二区域中形成多个第二栅极，使得所述第二栅极以不同于所述第一间距的第二间距彼此间隔开，将蚀刻速率调节掺杂剂注入所述第二区域以形成注入区域，同时阻挡第一区域，通过蚀刻多个第一栅极之间的第一区域形成第一沟槽，并且通过蚀刻多个第二栅极之间的第二区域形成第二沟槽。

7. 发明授权

US07872644B2 Aging pad and flat panel display device having the same 有权
标题翻译：老化垫和具有相同功能的平板显示装置
公开(公告)号：US07872644B2
公开(公告)日：2011-01-18
申请号：US11473137
申请日：2006-06-23
申请人： Soon-Kwang Hong , Young-Ju Park
发明人： Soon-Kwang Hong , Young-Ju Park
IPC分类号： G09G5/00 , G09G3/10 , G09G3/30
CPC分类号： G02F1/136204 , G02F1/1345 , G02F1/13458 , G02F2001/136254
摘要： A flat panel display device includes: a display panel; a driving circuit unit for applying a drive signal to the display panel; and a plurality of aging pads connected with the driving circuit unit and applying aging signals to the display panel, wherein each aging pad includes a plurality of sub-aging pads.
摘要翻译：平板显示装置包括：显示面板; 驱动电路单元，用于向显示面板施加驱动信号; 以及与所述驱动电路单元连接并且将陈旧信号施加到所述显示面板的多个老化垫，其中每个老化垫包括多个次老化垫。

8. 发明申请

US20050253138A1 Silicon optoelectronic device using silicon nanowire and method for preparing the same 审中-公开
标题翻译：硅光电子器件采用硅纳米线及其制备方法
公开(公告)号：US20050253138A1
公开(公告)日：2005-11-17
申请号：US11012698
申请日：2004-12-16
申请人： Heon Choi , Jung-Chul Lee , Young Ju Park , Jae Gwan Park
发明人： Heon Choi , Jung-Chul Lee , Young Ju Park , Jae Gwan Park
IPC分类号： H01L29/06 , H01L29/08 , H01L33/18 , H01L33/20 , H01L33/34
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L33/18 , H01L33/20 , H01L33/34
摘要： The present invention relates to a silicon optoelectronic device using silicon nanowire and a method for preparing the same. More particularly, the present invention relates to a silicon optoelectronic device using silicon nanowire, which is prepared by doping erbium (Er) into silicon nanowire and form a silicon dioxide sheath on the surface of the silicon nanowire by oxidation, so that the diameter of the silicon nanowire is reduced to give quantum confinement effect and photoelectric transition effect, and a method for preparing the same. When an electric current is applied, light emitted by the photoelectric transition effect of the silicon nanowire excites and decays the doped erbium to effectively emit light having a wavelength of about 1.5 μm. The silicon dioxide sheath effectively amplifies the light by the microcavity effect of the silicon nanowire.
摘要翻译：本发明涉及使用硅纳米线的硅光电子器件及其制备方法。更具体地，本发明涉及使用硅纳米线的硅光电子器件，其通过将铒（Er）掺杂到硅纳米线中并通过氧化在硅纳米线的表面上形成二氧化硅鞘制备，使得直径硅纳米线被还原以产生量子限制效应和光电转换效应，以及其制备方法。当施加电流时，由硅纳米线的光电转换效应发射的光激发并衰减掺杂的铒以有效发射具有约1.5μm波长的光。二氧化硅护套通过硅纳米线的微腔效应有效地放大光。

9. 发明授权

US06534385B2 Method of fusion for heteroepitaxial layers and overgrowth thereon 失效
公开(公告)号：US06534385B2
公开(公告)日：2003-03-18
申请号：US10003999
申请日：2001-11-14
申请人： Young-Ju Park , Sung-Min Hwang , Eun-Kyu Kim
发明人： Young-Ju Park , Sung-Min Hwang , Eun-Kyu Kim
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/02381 , H01L21/02392 , H01L21/02463 , H01L21/02494 , H01L21/02546 , H01L21/02658 , H01L21/2007 , H01L21/76248
摘要： The present invention relates to a method of fusion for heteroepitaxial layers and overgrowth thereon. According to the present invention, a high quality heteroepilayer can be formed by patterning a fused semiconductor layer, overgrowing it with a persistent patterned character, and fusing other semiconductors having different lattice constants by means of utilizing the rate difference between the lateral growth rate and the vertical growth rate exhibited, on the above process. Further, according to the present invention, the lattice constant difference of the two semiconductors can be overcome and a high quality quantum structure can be formed. According to the present invention, the junction of two semiconductor materials having different lattice constants, as well as a good overgrowth on heteroepitaxial layers can be carried out. Accordingly to the present invention, the base material from which the new, as yet on realized, conceptive optoelectronic device can be made.

10. 发明授权

US5135726A Vertical gradient freezing apparatus for compound semiconductor single crystal growth 失效
标题翻译：用于化合物半导体单晶生长的垂直梯度冷冻装置
公开(公告)号：US5135726A
公开(公告)日：1992-08-04
申请号：US672563
申请日：1991-03-20
申请人： Suk Ki Min , Seung Chul Park , Chul Won Han , Young Ju Park , Kwang Bo Shim
发明人： Suk Ki Min , Seung Chul Park , Chul Won Han , Young Ju Park , Kwang Bo Shim
IPC分类号： C30B11/00 , C30B13/22 , C30B29/40 , C30B29/42 , H01L21/208
CPC分类号： C30B29/48 , C30B11/003 , C30B11/006 , C30B29/40 , Y10S117/90 , Y10T117/1012 , Y10T117/1092
摘要： A vertical gradient freeze single crystal growing apparatus utilizing a direct monitoring furnace which is possible to obtain rapid high temperature heating and uniform temperature distribution by using direct monitoring furnace as a higher temperature part furnace provided with double quartz tube applied with gold thin film, and also capable of observing entire process of single crystal growing directly by naked eye.The apparatus includes a direct monitoring furnace corresponding to higher temperature part furnace and lower temperature part furnace mounted on vertically standing guide rails so as to be moved upwardly and downwardly voluntarily thereon simultaneously or independently, and the direct monitoring furnace is provided with heater wires divided into more than two regions to inner side of protecting quartz tube provided within double quartz tube applied with gold thin film on its interior surface and formed with cooling water in and outlets and also crystal growing reaction tube capable of normal and reverse turning is provided thereto, and a number of thermocouples are provided to the furnaces.
摘要翻译：使用直接监测炉的垂直梯度冷冻单晶生长装置，其可以通过使用直接监测炉作为高温部分炉获得快速的高温加热和均匀的温度分布，所述高温部分炉具有应用金薄膜的双重石英管，并且还能够通过肉眼观察直接生长的单晶生长过程。该装置包括对应于高温部件炉和安装在垂直立式导轨上的低温部件炉的直接监控炉，以便同时或独立地向上和向下自主地向上和向下移动，并且直接监控炉具有分为提供在双层石英管的内侧保护石英管的两个以上的内侧，在其内表面上涂有金薄膜并形成冷却水，出口以及能够正转和反向转动的晶体生长反应管，一些热电偶被提供给炉子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式