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1. 发明申请

US20090193408A1 INTERFACE AND METHOD FOR INTERFACING ELEMENT MANAGEMENT SERVER IN WIRELESS TELECOMMUNICATION SYSTEM 审中-公开
标题翻译：用于在无线电信系统中接收元件管理服务器的接口和方法
公开(公告)号：US20090193408A1
公开(公告)日：2009-07-30
申请号：US12373293
申请日：2007-07-12
申请人： Jung-Hyun Ok , Se-Whan Ko , Eun-Kyu Kim
发明人： Jung-Hyun Ok , Se-Whan Ko , Eun-Kyu Kim
IPC分类号： G06F9/44 , G06F15/16 , G06F15/177
CPC分类号： H04L41/0806 , H04L67/06 , H04L67/34 , H04L69/40
摘要： Disclosed is an interface for interfacing an element management server in a wireless telecommunication system and a method for the same. The element management server for managing an ACR and an RAS, which are elements of the wireless telecommunication system, are adapted to interwork with the ACR and the RAS, respectively, so that the server can directly manage the ACR and the RAS and, particularly, the RAS can be operated more efficiently and maintained/repaired more quickly. The element management server manages the version of a package regarding all processors of lower elements and software to be loaded, and respective processors of the lower elements store nothing but their setup information (e.g. software, version) so that, if necessary, the element management server can transmit specific software only to the lower elements. This guarantees fast software download and provides users with stable services.
摘要翻译：公开了一种用于在无线电信系统中对元件管理服务器进行接口的接口及其方法。用于管理作为无线电信系统的元件的ACR和RAS的元件管理服务器分别适于与ACR和RAS互通，使得服务器可以直接管理ACR和RAS，并且特别地， RAS可以更有效地运行，并能更快地维护/修理。元素管理服务器管理关于要加载的较低元素和软件的所有处理器的包的版本，并且下层元件的相应处理器仅存储其设置信息（例如，软件，版本），使得如果需要，元素管理服务器只能将特定的软件传输到较低的元素。这保证了快速的软件下载，并为用户提供稳定的服务。

2. 发明授权

US06683013B2 Method of formation for quantum dots array using tilted substrate 失效
标题翻译：使用倾斜衬底的量子点阵列的形成方法
公开(公告)号：US06683013B2
公开(公告)日：2004-01-27
申请号：US10099985
申请日：2002-03-19
申请人： Eun Kyu Kim , Yong Ju Park , Hyo Jin Kim , Tae Whan Kim
发明人： Eun Kyu Kim , Yong Ju Park , Hyo Jin Kim , Tae Whan Kim
IPC分类号： H01L2100
CPC分类号： B82Y10/00 , H01L21/02392 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/0259 , H01L21/0262 , H01L29/125 , H01L29/127
摘要： Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency in the lattice constant on a tilted substrate by using the binding property of atomic bonding due to chemical bonding steps of the tilted substrate, and the spacing of the wire-like quantum dots is varied by using the step width of the tilted substrate which is transformed due to a partial pressure of a source gas and the thickness of a buffer layer. The invention allows materials having an inconsistency in the lattice constant to be freely formed in the form of quantum wires with a growing technique only and accordingly to be used as base materials in use for manufacture of novel concept of optoelectronic devices which have not been obtained so far.
摘要翻译：公开了一种形成量子点阵列的方法。在本发明的方法中，通过使用由于倾斜的化学键合步骤引起的原子键合的结合特性，在倾斜的基板上的晶格常数不一致的材料中形成质量好的线状量子点的结构基板，并且通过使用由于源气体的分压和缓冲层的厚度而变换的倾斜基板的台阶宽度来改变线状量子点的间隔。本发明允许具有晶格常数不一致的材料以量子线的形式自由地形成为仅具有成长技术的材料，并因此被用作用于制造尚未获得的光电子器件的新概念的基础材料远。

3. 发明授权

US5904492A Quantum wire laser diode fabrication method 失效
标题翻译：量子线激光二极管制造方法
公开(公告)号：US5904492A
公开(公告)日：1999-05-18
申请号：US958404
申请日：1997-10-29
申请人： Suk-Ki Min , Eun Kyu Kim
发明人： Suk-Ki Min , Eun Kyu Kim
IPC分类号： H01S3/0941 , H01S5/34 , H01S5/40 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/341 , H01S5/4043
摘要： A quantum wire laser diode fabrication method includes the steps of forming a buffer layer and an epitaxial layer sequentially on a substrate, forming a V-grooved pattern into the epitaxial layer to form a current blocking layer, and forming another buffer layer thereon, forming a quantum wire laser structure on the V-grooved pattern, forming a contact layer, and forming an electrode. The fabrication method employs a current blocking layer formed outside the V-grooved pattern to interrupt the current from flowing thereinto, for thereby enabling the current to only flow into the active layer, without requiring any subsequent processes which allow the current to efficiently flow into the active layer, and further obtaining the low threshold current.
摘要翻译：量子线激光二极管制造方法包括以下步骤：在衬底上依次形成缓冲层和外延层，在外延层中形成V沟槽图案以形成电流阻挡层，并在其上形成另一个缓冲层，形成量子线激光器结构在V沟槽图案上，形成接触层，并形成电极。该制造方法采用形成在V沟槽图案之外的电流阻挡层来中断电流流入其中，从而使得电流仅能流入有源层，而不需要任何后续的工艺，其允许电流有效地流入有源层，进一步获得低阈值电流。

4. 发明申请

US20100211629A1 EXPANDABLE ELEMENT MANAGEMENT SYSTEM IN WIRELESS COMMUNICATION NETWORK 审中-公开
标题翻译：无线通信网络中的可扩展元素管理系统
公开(公告)号：US20100211629A1
公开(公告)日：2010-08-19
申请号：US12377385
申请日：2007-08-16
申请人： Jung-Hyun Ok , Se-Whan Ko , Eun-Kyu Kim
发明人： Jung-Hyun Ok , Se-Whan Ko , Eun-Kyu Kim
IPC分类号： G06F15/173 , G06F15/16
CPC分类号： H04L41/069 , H04B17/309 , H04L41/0213 , H04L41/044 , H04L43/16
摘要： Disclosed is an expandable EMS that can efficiently manage an RAS and an ACR (i.e. network elements of a wireless communication network) and flexibly expand performance and functions of a system according to an increase in the elements. The expansible EMS of a wireless communication network, the expansible EMS including: an EMS application server for performing at least one of a configuration management function, a fault management function, a download management function, and a status management function for elements, in response to a command transmitted from an EMS client; and at least one EMS element interface server directly connected with the elements, the at least one EMS element interface server receiving a message and data from the elements and providing the received message and data to the EMS application server, wherein the EMS element interface server is separated from the EMS application server.
摘要翻译：公开了可以有效地管理RAS和ACR（即，无线通信网络的网络元件）的可扩展EMS，并且根据元素的增加灵活地扩展系统的性能和功能。可扩展EMS包括：EMS应用服务器，用于执行配置管理功能，故障管理功能，下载管理功能和元素的状态管理功能中的至少一个，响应于从EMS客户端发送的命令; 以及至少一个EMS元件接口服务器，与所述元件直接连接，所述至少一个EMS元件接口服务器从所述元件接收消息和数据，并将所接收的消息和数据提供给所述EMS应用服务器，其中所述EMS元件接口服务器是与EMS应用服务器分离。

5. 发明授权

US06475886B2 Fabrication method of nanocrystals using a focused-ion beam 失效
标题翻译：使用聚焦离子束的纳米晶体的制造方法
公开(公告)号：US06475886B2
公开(公告)日：2002-11-05
申请号：US10025696
申请日：2001-12-26
申请人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
发明人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
IPC分类号： H01L21425
CPC分类号： C23C14/5833 , B82Y10/00 , B82Y30/00 , C23C14/5873 , C30B13/24 , C30B29/605 , H01L21/265 , Y10S977/949
摘要： Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.
摘要翻译：公开了一种形成纳米晶体的方法。在上述方法中，制备了在其上形成有金属膜或半导体膜的基板。聚焦离子束照射在金属膜或半导体膜的表面上的多个位置上，由此在聚焦离子束的焦点部分除去金属膜或半导体膜，但是在金属膜或半导体膜由于聚焦离子束的辐射效应而在聚焦离子束的重叠区域断裂，形成纳米晶体。该方法允许使用聚焦离子束容易且简单地形成几nm或更小尺寸的纳米晶体。结果，形成的纳米晶体具有能够在室温下抑制热波动现象的结合能，从而可以制造能够在室温下操作的隧道晶体管。此外，本发明在很大程度上有助于开发具有tera字节级或更高级别的存储电容的下一代超高密度存储器件。

6. 发明授权

US5882950A Fabrication method for horizontal direction semiconductor PN junction array 失效
标题翻译：水平方向半导体PN结阵列的制造方法
公开(公告)号：US5882950A
公开(公告)日：1999-03-16
申请号：US773185
申请日：1996-12-27
申请人： Suk-Ki Min , Seong-Il Kim , Eun Kyu Kim
发明人： Suk-Ki Min , Seong-Il Kim , Eun Kyu Kim
IPC分类号： H01L21/20 , H01L21/205 , H01L31/0352 , H01L31/04 , H01L31/10 , H01L33/16 , H01L33/30 , H01L21/00 , H01L21/36 , H01L21/425
CPC分类号： H01L21/02395 , H01L21/0243 , H01L21/02463 , H01L21/02546 , H01L21/0262 , H01L21/02639 , Y02E10/544 , Y02P70/521 , Y10S148/042 , Y10S148/05 , Y10S148/056 , Y10S148/168 , Y10S438/912 , Y10S438/915
摘要： A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl.sub.4 or CBr.sub.4 gas, includes forming a recess on an N type GaAs substrate by using a non-planar growth, performing a growth method of a P type epitaxial layer on the N type GaAs substrate by a metalorganic chemical vapor deposition method, and forming a horizontal direction PN junction array of P-GaAs/N-GaAs or P-AlGaAs/N-GaAs by introducing a gas comprising CCl.sub.4 or CBr.sub.4 .
摘要翻译：通过引入（或掺杂）少量CCl4或CBr4气体，通过金属有机化学气相沉积（MOCVD法）生长外延层时可以实现的水平方向半导体PN结阵列的制造方法包括形成凹陷通过使用非平面生长在N型GaAs衬底上，通过金属有机化学气相沉积法在N型GaAs衬底上进行P型外延层的生长方法，并且形成P-GaAs的水平方向PN结阵列 / N-GaAs或P-AlGaAs / N-GaAs，通过引入包含CCl 4或CBr 4的气体。

7. 发明授权

US5827754A Fabrication method for high-output quantum wire array diode structure 失效
标题翻译：高输出量子线阵二极管结构的制作方法
公开(公告)号：US5827754A
公开(公告)日：1998-10-27
申请号：US770957
申请日：1996-12-20
申请人： Suk-Ki Min , Eun Kyu Kim
发明人： Suk-Ki Min , Eun Kyu Kim
IPC分类号： H01L31/00 , H01S5/34 , H01S5/40 , H01L21/00
CPC分类号： B82Y20/00 , H01S5/341 , H01S5/4043
摘要： A fabrication method for a high output quantum wire array laser diode structure having a low threshold current and a high output is formed by fabricating a short period GaAs quantum wire array and removing an unnecessary quantum well layer with laser holographic lithography techniques and a metalorganic chemical vapor deposition and by forming a current blocking layer which is required in fabricating a laser diode with lithography techniques using a photoresist mask on a micro-patterned structure.
摘要翻译：通过制造短周期GaAs量子线阵列并用激光全息光刻技术和金属有机化学气相沉积去除不必要的量子阱层，形成具有低阈值电流和高输出的高输出量子线阵列激光二极管结构的制造方法并且通过在微图案结构上使用光致抗蚀剂掩模的光刻技术形成在制造激光二极管中所需的电流阻挡层。

8. 发明授权

US06696313B2 Method for aligning quantum dots and semiconductor device fabricated by using the same 失效
标题翻译：用于对准量子点的方法和使用该半导体器件制造的半导体器件
公开(公告)号：US06696313B2
公开(公告)日：2004-02-24
申请号：US09947375
申请日：2001-09-07
申请人： Yong Ju Park , Eun Kyu Kim , Kwang Moo Kim
发明人： Yong Ju Park , Eun Kyu Kim , Kwang Moo Kim
IPC分类号： H01L2100
CPC分类号： H01L33/08 , B82Y10/00 , B82Y20/00 , H01L29/127 , H01L31/0352 , H01L31/18 , H01L33/0062 , H01L33/06 , H01S5/12 , H01S5/3412 , Y10S438/938 , Y10S438/962
摘要： A method for aligning quantum dots effectively controls a growth position of the quantum dots for obviating an irregularity of a position of spontaneous formation quantum dots, and thus aligns the quantum dots in one-dimension (1-D) or two-dimension (2-D). A semiconductor device fabricated using the method manufactures a superlattice layer layer for adjusting an internal strain distribution by alternately depositing two semiconductor materials having different lattice constant, and grows spontaneous formation quantum dots on the superlattice layer. As a result, a strained force caused by the superlattice layer influences on the quantum dots so that the quantum dots can be regularly aligned.
摘要翻译：用于对准量子点的方法有效地控制量子点的生长位置，以消除自发形成量子点的位置的不规则性，从而使量子点在一维（1-D）或二维（2- D）。使用该方法制造的半导体器件制造超晶格层层，用于通过交替沉积具有不同晶格常数的两种半导体材料来调节内部应变分布，并且在超晶格层上生长自发形成量子点。结果，由超晶格层引起的应变力影响量子点，使得量子点可以规则地排列。

9. 发明授权

US06534385B2 Method of fusion for heteroepitaxial layers and overgrowth thereon 失效
公开(公告)号：US06534385B2
公开(公告)日：2003-03-18
申请号：US10003999
申请日：2001-11-14
申请人： Young-Ju Park , Sung-Min Hwang , Eun-Kyu Kim
发明人： Young-Ju Park , Sung-Min Hwang , Eun-Kyu Kim
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/02381 , H01L21/02392 , H01L21/02463 , H01L21/02494 , H01L21/02546 , H01L21/02658 , H01L21/2007 , H01L21/76248
摘要： The present invention relates to a method of fusion for heteroepitaxial layers and overgrowth thereon. According to the present invention, a high quality heteroepilayer can be formed by patterning a fused semiconductor layer, overgrowing it with a persistent patterned character, and fusing other semiconductors having different lattice constants by means of utilizing the rate difference between the lateral growth rate and the vertical growth rate exhibited, on the above process. Further, according to the present invention, the lattice constant difference of the two semiconductors can be overcome and a high quality quantum structure can be formed. According to the present invention, the junction of two semiconductor materials having different lattice constants, as well as a good overgrowth on heteroepitaxial layers can be carried out. Accordingly to the present invention, the base material from which the new, as yet on realized, conceptive optoelectronic device can be made.

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