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1. 发明授权

US5135726A Vertical gradient freezing apparatus for compound semiconductor single crystal growth 失效
标题翻译：用于化合物半导体单晶生长的垂直梯度冷冻装置
公开(公告)号：US5135726A
公开(公告)日：1992-08-04
申请号：US672563
申请日：1991-03-20
申请人： Suk Ki Min , Seung Chul Park , Chul Won Han , Young Ju Park , Kwang Bo Shim
发明人： Suk Ki Min , Seung Chul Park , Chul Won Han , Young Ju Park , Kwang Bo Shim
IPC分类号： C30B11/00 , C30B13/22 , C30B29/40 , C30B29/42 , H01L21/208
CPC分类号： C30B29/48 , C30B11/003 , C30B11/006 , C30B29/40 , Y10S117/90 , Y10T117/1012 , Y10T117/1092
摘要： A vertical gradient freeze single crystal growing apparatus utilizing a direct monitoring furnace which is possible to obtain rapid high temperature heating and uniform temperature distribution by using direct monitoring furnace as a higher temperature part furnace provided with double quartz tube applied with gold thin film, and also capable of observing entire process of single crystal growing directly by naked eye.The apparatus includes a direct monitoring furnace corresponding to higher temperature part furnace and lower temperature part furnace mounted on vertically standing guide rails so as to be moved upwardly and downwardly voluntarily thereon simultaneously or independently, and the direct monitoring furnace is provided with heater wires divided into more than two regions to inner side of protecting quartz tube provided within double quartz tube applied with gold thin film on its interior surface and formed with cooling water in and outlets and also crystal growing reaction tube capable of normal and reverse turning is provided thereto, and a number of thermocouples are provided to the furnaces.
摘要翻译：使用直接监测炉的垂直梯度冷冻单晶生长装置，其可以通过使用直接监测炉作为高温部分炉获得快速的高温加热和均匀的温度分布，所述高温部分炉具有应用金薄膜的双重石英管，并且还能够通过肉眼观察直接生长的单晶生长过程。该装置包括对应于高温部件炉和安装在垂直立式导轨上的低温部件炉的直接监控炉，以便同时或独立地向上和向下自主地向上和向下移动，并且直接监控炉具有分为提供在双层石英管的内侧保护石英管的两个以上的内侧，在其内表面上涂有金薄膜并形成冷却水，出口以及能够正转和反向转动的晶体生长反应管，一些热电偶被提供给炉子。

2. 发明授权

US5769944A Vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying axial magnetic field 失效
标题翻译：垂直梯度冻结和垂直布里奇曼复合半导体晶体生长装置能够施加轴向磁场
公开(公告)号：US5769944A
公开(公告)日：1998-06-23
申请号：US705000
申请日：1996-08-29
申请人： Young Ju Park , Suk-Ki Min
发明人： Young Ju Park , Suk-Ki Min
IPC分类号： H01L29/49 , C30B11/00 , C30B29/42 , C30B33/04 , C30B35/00
CPC分类号： C30B11/007 , Y10T117/10 , Y10T117/1016 , Y10T117/102 , Y10T117/1092
摘要： An improved vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying an axial magnetic field of about 1600G in the crystal growth axis direction using an electrical resistance type electromagnet which has a simple structure and can be installed easily, which includes a high temperature electric furnace arranged at an upper portion of the apparatus, a crystal growth reaction tube disposed within a low temperature electric furnace arranged below the high temperature electric furnace and having a reaction container disposed therein, and an electromagnet surrounding the intermediate portion of the high temperature electric furnace.
摘要翻译：一种改进的垂直梯度冷冻和垂直布里奇曼复合半导体晶体生长装置，其能够使用具有简单结构并且可以容易地安装的电阻型电磁体在晶体生长轴方向上施加约1600G的轴向磁场，其包括高设置在设备上部的高温电炉，设置在布置在高温电炉下方并具有设置在其中的反应容器的低温电炉内的晶体生长反应管和围绕高温中间部分的电磁体电炉

3. 发明授权

US07450092B2 Organic light-emitting device 有权
标题翻译：有机发光装置
公开(公告)号：US07450092B2
公开(公告)日：2008-11-11
申请号：US11002197
申请日：2004-12-03
申请人： Byeong Koo Kim , O Hyun Kim , Young Ju Park
发明人： Byeong Koo Kim , O Hyun Kim , Young Ju Park
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/0465 , G09G2300/0809 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2300/0876 , G09G2320/0233 , G09G2320/043
摘要： An organic light-emitting device includes a first transistor for applying a data voltage; a second transistor for applying a driving current depending on the data voltage and an initiation voltage to an organic light-emitting diode; a third transistor for generating a threshold voltage; a fourth transistor for applying an initiation voltage, the fourth transistor being connected to the third transistor; a fifth transistor for applying a power voltage; and a condenser provided between a first node connected to the third and fifth transistors and a second node connected to the first and second transistors, for maintaining the power voltage and the threshold voltage for compensation.
摘要翻译：有机发光器件包括用于施加数据电压的第一晶体管; 第二晶体管，用于根据数据电压和初始电压向有机发光二极管施加驱动电流; 用于产生阈值电压的第三晶体管; 用于施加起始电压的第四晶体管，所述第四晶体管连接到所述第三晶体管; 用于施加电源电压的第五晶体管; 以及冷凝器，设置在连接到第三和第五晶体管的第一节点和连接到第一和第二晶体管的第二节点之间，用于维持电源电压和用于补偿的阈值电压。

4. 发明授权

US06475886B2 Fabrication method of nanocrystals using a focused-ion beam 失效
标题翻译：使用聚焦离子束的纳米晶体的制造方法
公开(公告)号：US06475886B2
公开(公告)日：2002-11-05
申请号：US10025696
申请日：2001-12-26
申请人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
发明人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
IPC分类号： H01L21425
CPC分类号： C23C14/5833 , B82Y10/00 , B82Y30/00 , C23C14/5873 , C30B13/24 , C30B29/605 , H01L21/265 , Y10S977/949
摘要： Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.
摘要翻译：公开了一种形成纳米晶体的方法。在上述方法中，制备了在其上形成有金属膜或半导体膜的基板。聚焦离子束照射在金属膜或半导体膜的表面上的多个位置上，由此在聚焦离子束的焦点部分除去金属膜或半导体膜，但是在金属膜或半导体膜由于聚焦离子束的辐射效应而在聚焦离子束的重叠区域断裂，形成纳米晶体。该方法允许使用聚焦离子束容易且简单地形成几nm或更小尺寸的纳米晶体。结果，形成的纳米晶体具有能够在室温下抑制热波动现象的结合能，从而可以制造能够在室温下操作的隧道晶体管。此外，本发明在很大程度上有助于开发具有tera字节级或更高级别的存储电容的下一代超高密度存储器件。

5. 发明授权

US07907104B2 Luminescent display device and method that drives the same 有权
标题翻译：发光显示装置及其驱动方法
公开(公告)号：US07907104B2
公开(公告)日：2011-03-15
申请号：US11472841
申请日：2006-06-22
申请人： Du Hwan Oh , Young Ju Park , Hoon Ju Chung
发明人： Du Hwan Oh , Young Ju Park , Hoon Ju Chung
IPC分类号： G09C3/30 , G09C3/10 , G11C19/00
CPC分类号： G09G3/3258 , G09G3/2022 , G09G3/3266 , G09G2300/0465 , G09G2300/0842 , G09G2310/0262 , G11C19/184
摘要： A luminescent display device and a method for driving the same are disclosed which are capable of increasing the aspect ratio of pixel regions. The luminescent display device includes a display including gate lines, and data lines extending orthogonally to the gate lines, a first shift register connected to one end of each of the gate lines, to sequentially supply first scan pulses to the gate lines, respectively, a second shift register connected to the other end of each of the gate lines, to sequentially supply second scan pulses to the gate lines, respectively, switching elements each adapted to switch an ON voltage or an OFF voltage from the associated data line in accordance with the first scan pulse from the associated gate line, and to switch an OFF voltage from the associated data line in accordance with the second scan pulse from the associated gate line, drive switching elements each adapted to generate current in accordance with the ON voltage from the associated switching element, each drive switching element being turned off in accordance with the OFF voltage from the associated switching element, capacitors each connected between gate and source terminals of an associated one of the drive switching elements, and light emitting elements each adapted to emit light in accordance with the current from the associated drive switching element.
摘要翻译：公开了能够增加像素区域的纵横比的发光显示装置及其驱动方法。发光显示装置包括显示器，其包括栅极线和与栅极线正交延伸的数据线，连接到每条栅极线的一端的第一移位寄存器，以分别向栅极线顺序地提供第一扫描脉冲，第二移位寄存器连接到每条栅极线的另一端，以分别顺序地向栅极线提供第二扫描脉冲，每个开关元件适于根据相关联的数据线切换导通电压或断开电压来自相关联的栅极线的第一扫描脉冲，以及根据来自关联的栅极线的第二扫描脉冲从相关联的数据线切换OFF电压，驱动开关元件，每个驱动开关元件适于根据来自相关联的栅极线的导通电压产生电流开关元件，每个驱动开关元件根据来自相关联的开关元件的OFF电压被切断，电容器各自连接在相关联的一个驱动开关元件的栅极和源极端子之间，以及各自适于根据来自相关联的驱动开关元件的电流发光的发光元件。

6. 发明申请

US20050253138A1 Silicon optoelectronic device using silicon nanowire and method for preparing the same 审中-公开
标题翻译：硅光电子器件采用硅纳米线及其制备方法
公开(公告)号：US20050253138A1
公开(公告)日：2005-11-17
申请号：US11012698
申请日：2004-12-16
申请人： Heon Choi , Jung-Chul Lee , Young Ju Park , Jae Gwan Park
发明人： Heon Choi , Jung-Chul Lee , Young Ju Park , Jae Gwan Park
IPC分类号： H01L29/06 , H01L29/08 , H01L33/18 , H01L33/20 , H01L33/34
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L33/18 , H01L33/20 , H01L33/34
摘要： The present invention relates to a silicon optoelectronic device using silicon nanowire and a method for preparing the same. More particularly, the present invention relates to a silicon optoelectronic device using silicon nanowire, which is prepared by doping erbium (Er) into silicon nanowire and form a silicon dioxide sheath on the surface of the silicon nanowire by oxidation, so that the diameter of the silicon nanowire is reduced to give quantum confinement effect and photoelectric transition effect, and a method for preparing the same. When an electric current is applied, light emitted by the photoelectric transition effect of the silicon nanowire excites and decays the doped erbium to effectively emit light having a wavelength of about 1.5 μm. The silicon dioxide sheath effectively amplifies the light by the microcavity effect of the silicon nanowire.
摘要翻译：本发明涉及使用硅纳米线的硅光电子器件及其制备方法。更具体地，本发明涉及使用硅纳米线的硅光电子器件，其通过将铒（Er）掺杂到硅纳米线中并通过氧化在硅纳米线的表面上形成二氧化硅鞘制备，使得直径硅纳米线被还原以产生量子限制效应和光电转换效应，以及其制备方法。当施加电流时，由硅纳米线的光电转换效应发射的光激发并衰减掺杂的铒以有效发射具有约1.5μm波长的光。二氧化硅护套通过硅纳米线的微腔效应有效地放大光。

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