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1. 发明授权

US5135726A Vertical gradient freezing apparatus for compound semiconductor single crystal growth 失效
标题翻译：用于化合物半导体单晶生长的垂直梯度冷冻装置
公开(公告)号：US5135726A
公开(公告)日：1992-08-04
申请号：US672563
申请日：1991-03-20
申请人： Suk Ki Min , Seung Chul Park , Chul Won Han , Young Ju Park , Kwang Bo Shim
发明人： Suk Ki Min , Seung Chul Park , Chul Won Han , Young Ju Park , Kwang Bo Shim
IPC分类号： C30B11/00 , C30B13/22 , C30B29/40 , C30B29/42 , H01L21/208
CPC分类号： C30B29/48 , C30B11/003 , C30B11/006 , C30B29/40 , Y10S117/90 , Y10T117/1012 , Y10T117/1092
摘要： A vertical gradient freeze single crystal growing apparatus utilizing a direct monitoring furnace which is possible to obtain rapid high temperature heating and uniform temperature distribution by using direct monitoring furnace as a higher temperature part furnace provided with double quartz tube applied with gold thin film, and also capable of observing entire process of single crystal growing directly by naked eye.The apparatus includes a direct monitoring furnace corresponding to higher temperature part furnace and lower temperature part furnace mounted on vertically standing guide rails so as to be moved upwardly and downwardly voluntarily thereon simultaneously or independently, and the direct monitoring furnace is provided with heater wires divided into more than two regions to inner side of protecting quartz tube provided within double quartz tube applied with gold thin film on its interior surface and formed with cooling water in and outlets and also crystal growing reaction tube capable of normal and reverse turning is provided thereto, and a number of thermocouples are provided to the furnaces.
摘要翻译：使用直接监测炉的垂直梯度冷冻单晶生长装置，其可以通过使用直接监测炉作为高温部分炉获得快速的高温加热和均匀的温度分布，所述高温部分炉具有应用金薄膜的双重石英管，并且还能够通过肉眼观察直接生长的单晶生长过程。该装置包括对应于高温部件炉和安装在垂直立式导轨上的低温部件炉的直接监控炉，以便同时或独立地向上和向下自主地向上和向下移动，并且直接监控炉具有分为提供在双层石英管的内侧保护石英管的两个以上的内侧，在其内表面上涂有金薄膜并形成冷却水，出口以及能够正转和反向转动的晶体生长反应管，一些热电偶被提供给炉子。

2. 发明授权

US5186911A Single crystal growing apparatus and method 失效
标题翻译：单晶生长装置及方法
公开(公告)号：US5186911A
公开(公告)日：1993-02-16
申请号：US517564
申请日：1990-05-01
申请人： Suk Ki Min , Seung Chul Park , Chul Won Han
发明人： Suk Ki Min , Seung Chul Park , Chul Won Han
IPC分类号： C30B11/00
CPC分类号： C30B29/48 , C30B11/003 , C30B29/40 , C30B29/42 , Y10S117/90 , Y10T117/1012
摘要： A horizontal Bridgman single crystal growing apparatus using a direct monitoring electric furnace suitable for a single crystal growing of III-V, II-VI group compound semiconductor materials (InP, CdTe, etc.) including a gallium arsenide (GaAs). The apparatus is composed of: a heater wire being formed around a quartz tube for supporting, a cylindrical double quartz tube arranged with cooling water or gas inlet and outlet for circulation externally and coated with gold thin film on the internal wall surface thereof, thereby the high temperature heating over 1240.degree. C. is possible to obtain within a short period of time and also the cooling is possible, and whole process of the single crystal growing can be observed directly with naked eyes.
摘要翻译：一种使用适用于包括砷化镓（GaAs）的III-V，II-VI族化合物半导体材料（InP，CdTe等）的单晶生长的直接监测电炉的水平Bridgman单晶生长装置。该装置由以下部件构成：在石英管周围形成有用于支撑的加热丝线，配置有冷却水的圆柱形双重石英管或外部循环的气体入口和出口，在其内壁表面上涂覆有金薄膜，可以在短时间内获得1240℃以上的高温加热，还可以进行冷却，可以用肉眼直接观察单晶生长的全过程。

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