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    • 2. 发明申请
    • Method of eliminating boron contamination in annealed wafer
    • 消除退火晶圆中硼污染的方法
    • US20060148249A1
    • 2006-07-06
    • US10525442
    • 2003-08-28
    • So BaeYoshinobu NakadaKenichi Kaneko
    • So BaeYoshinobu NakadaKenichi Kaneko
    • H01L21/44
    • H01L21/324H01L21/02046
    • A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided. The method includes, when annealing a silicon wafer having a surface on which a native oxide film has formed and boron of environmental origin or from chemical treatment prior to annealing has deposited, steps of carrying out temperature heat-up in a mixed gas atmosphere having a mixing ratio of hydrogen gas to inert gas of 5% to 100% so as to remove the boron-containing native oxide film, followed by annealing in an inert gas atmosphere.
    • 防止硅晶片在表面附近增加硼浓度并且在退火晶片的表面与硅体之间不产生硼浓度的差异以消除由退火处理引起的硅晶片中的硼污染的方法是 提供。 该方法包括:在退火之后退火具有形成有自然氧化膜的表面和环境来源的硼或退火之前的化学处理的硅晶片退火时,在具有 氢气与惰性气体的混合比为5%〜100%,除去含硼自然氧化膜,然后在惰性气体气氛中进行退火。
    • 6. 发明授权
    • Method of eliminating boron contamination in annealed wafer
    • 消除退火晶圆中硼污染的方法
    • US07199057B2
    • 2007-04-03
    • US10525442
    • 2003-08-28
    • So Ik BaeYoshinobu NakadaKenichi Kaneko
    • So Ik BaeYoshinobu NakadaKenichi Kaneko
    • H01L21/311H01L21/322
    • H01L21/324H01L21/02046
    • A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided. The method includes, when annealing a silicon wafer having a surface on which a native oxide film has formed and boron of environmental origin or from chemical treatment prior to annealing has deposited, steps of carrying out temperature heat-up in a mixed gas atmosphere having a mixing ratio of hydrogen gas to inert gas of 5% to 100% so as to remove the boron-containing native oxide film, followed by annealing in an inert gas atmosphere.
    • 防止硅晶片在表面附近增加硼浓度并且在退火晶片的表面与硅体之间不产生硼浓度的差异以消除由退火处理引起的硅晶片中的硼污染的方法是 提供。 该方法包括:在退火之后退火具有形成有自然氧化膜的表面和环境来源的硼或退火之前的化学处理的硅晶片退火时,在具有 氢气与惰性气体的混合比为5%〜100%,除去含硼自然氧化膜,然后在惰性气体气氛中进行退火。
    • 9. 发明授权
    • Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
    • 具有定向凝固结构的硅锭的制造方法及其制造方法
    • US06299682B1
    • 2001-10-09
    • US09658488
    • 2000-09-08
    • Saburo WakitaAkira MitsuhashiYoshinobu NakadaJun-ichi SasakiYuhji Ishiwari
    • Saburo WakitaAkira MitsuhashiYoshinobu NakadaJun-ichi SasakiYuhji Ishiwari
    • C30B1314
    • C30B29/06C30B11/003Y10S164/06
    • A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a crucible with a large cross-sectional area on the chill plate, providing an overhead heater over the crucible, and surrounding the circumference of the crucible with a heat insulator; heat-melting the silicon raw material by flowing an electric current through the underfloor heater and overhead heater; chilling the bottom of the crucible by halting the electric current through the underfloor heater after the silicon raw material has been completely melted to form a molten silicon; chilling the bottom of the crucible by flowing an inert gas through the chill plate; and intermittently or continuously lowering the temperature of the overhead heater by intermittently or continuously decreasing the electric current through the overhead heater, and an apparatus for producing the silicon ingot.
    • 一种制造具有定向凝固结构的硅锭的方法,包括以下步骤:将硅原料放入通过将冷却板安装在地板下加热器上构成的熔化装置的坩埚中,安装具有大横截面积的坩埚 在冷却板上,在坩埚上方提供顶部加热器,并用绝热体围绕坩埚的周边; 通过使电流流过地板加热器和塔顶加热器来热熔硅原料; 在硅原料完全熔化之后,通过停止通过地板下加热器的电流来冷却坩埚的底部以形成熔融硅; 通过使惰性气体流过冷却板来冷却坩埚的底部; 以及通过间歇地或连续地减少通过塔顶加热器的电流来间歇地或连续地降低塔顶加热器的温度,以及用于生产硅锭的装置。