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1. 发明申请

US20130028825A1 MANUFACTURING METHOD FOR POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT 审中-公开
标题翻译：多晶硅和多晶硅的制造方法
公开(公告)号：US20130028825A1
公开(公告)日：2013-01-31
申请号：US13636490
申请日：2011-03-25
申请人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
发明人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
IPC分类号： C03B5/23 , C01B33/02
CPC分类号： C01B33/02 , C01B33/037 , C30B11/006 , C30B28/06 , C30B29/06 , C30B35/002
摘要： A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦X
摘要翻译：一种多晶硅锭的制造方法，其特征在于，包括：从所述硅熔体的底面单向上固化保持在坩埚中的硅熔体，其中，在侧壁的内表面和坩埚的底部，坩埚中的凝固过程被高分割成从0到X（10mm和nlE; X <30mm）的第一区域，从X到Y的第二区域（30mm＆amp; NlE; Y <100mm），Y以上的第三区域以坩埚的底部为基准，第一区域的固化率V1为10mm / h×nlE; V1＆lt; ll; 20mm / h，凝固率第二区域中的V2在1mm / h＆lt; lEE; V2＆nlE; 5mm / h的范围内。

2. 发明申请

US20090297425A1 METALLIC SILICON AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：金属硅及其制造方法
公开(公告)号：US20090297425A1
公开(公告)日：2009-12-03
申请号：US12438763
申请日：2007-08-31
申请人： Kouji Tsuzukihashi , Hiroshi Ikeda , Atsuo Yanagimachi , Saburo Wakita
发明人： Kouji Tsuzukihashi , Hiroshi Ikeda , Atsuo Yanagimachi , Saburo Wakita
IPC分类号： C01B33/021
CPC分类号： C01B33/037 , C30B11/00 , C30B29/06
摘要： This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon includes: solidifying molten crude metallic silicon in a mold which contains fine silica particles in an inner peripheral layer thereof by unidirectional solidification at a rate of 1 mm/min or less; and then cooling to 200° C. or below at a rate of 2° C./min or less.
摘要翻译：该金属硅是通过单向凝固精炼熔融的粗制金属硅来制造的，其纯度为3N以上且6N以下，平均晶粒直径为1mm以上。该金属硅的制造方法包括：通过以1mm / min以下的速度进行单向凝固，在其内周层中固化含有二氧化硅微粒的模具中的熔融粗制金属硅; 然后以2℃/ min以下的速度冷却至200℃以下。

3. 发明授权

US09388507B2 Method for manufacturing polycrystalline silicon ingot, and polycrystalline silicon ingot 有权
标题翻译：多晶硅锭和多晶硅锭的制造方法
公开(公告)号：US09388507B2
公开(公告)日：2016-07-12
申请号：US13637054
申请日：2011-03-25
申请人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
发明人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
IPC分类号： C30B11/00 , C01B33/021 , C30B29/06
CPC分类号： C30B11/00 , C01B33/021 , C30B11/002 , C30B11/003 , C30B29/06
摘要： A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm≦X
摘要翻译：多晶硅锭的制造方法包括从坩埚的底部向上单方向地固化熔融硅，其中，坩埚上设置有沉积在可弯曲的底部上的二氧化硅; 然后将坩埚中的凝固度分成0mm至X的第一区域（10mm和nlE; X <30mm），X至Y的第二区域（30mm＆amp; NlE; Y <100mm）和基于所述坩埚的底部的高度为Y以上的第三区域，其中，所述第一区域中的固化率V1被设定在10mm / h×nlE; V1＆lt; ll; 20mm / h的范围内，凝固率V2为第二区域设定在1mm / h和nlE; V2＆nlE; 5mm / h的范围内。

4. 发明申请

US20130008371A1 METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT 有权
标题翻译：制造多晶硅硅酸盐的方法和多晶硅硅酸盐
公开(公告)号：US20130008371A1
公开(公告)日：2013-01-10
申请号：US13637054
申请日：2011-03-25
申请人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
发明人： Koji Tsuzukihashi , Hiroshi Ikeda , Masahiro Kanai , Saburo Wakita
IPC分类号： C30B11/00
CPC分类号： C30B11/00 , C01B33/021 , C30B11/002 , C30B11/003 , C30B29/06
摘要： A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm≦X
摘要翻译：多晶硅锭的制造方法包括从坩埚的底部向上单方向地固化熔融硅，其中，坩埚上设置有沉积在可弯曲的底部上的二氧化硅; 然后将坩埚中的凝固度分成0mm至X的第一区域（10mm和nlE; X <30mm），X至Y的第二区域（30min＆amp; Ne; Y <100mm）和基于所述坩埚的底部的高度为Y以上的第三区域，其中，所述第一区域中的固化率V1被设定在10mm / h×nlE; V1＆lt; ll; 20mm / h的范围内，凝固率V2为第二区域设定在1mm / h和nlE; V2＆nlE; 5mm / h的范围内。

5. 发明授权

US06334603B1 Mold for producing silicon ingot and method for fabricating the same 有权
标题翻译：用于生产硅锭的模具及其制造方法
公开(公告)号：US06334603B1
公开(公告)日：2002-01-01
申请号：US09258821
申请日：1999-02-26
申请人： Saburo Wakita , Akira Mitsuhashi , Jun-ichi Sasaki
发明人： Saburo Wakita , Akira Mitsuhashi , Jun-ichi Sasaki
IPC分类号： B22D706
CPC分类号： C30B11/002
摘要： A mold for producing a silicon ingot having a layered structure comprising an inner silica layer containing at least one layer in which a fused silica powder with a particle size of 100 &mgr;m or less and a fine fused silica sand with a particle size of 100-300 &mgr;m is bonded with a silica binder, and an outer silica layer containing at least one layer in which a fused silica powder with a particle size of 100 &mgr;m or less and a coarse fused silica sand with a particle size of 500-1500 &mgr;m is bonded with a silica binder.
摘要翻译：一种用于制造具有层状结构的硅锭的模具，其包括内部二氧化硅层，所述内部二氧化硅层含有至少一层，其中粒径为100μm以下的熔融二氧化硅粉末和粒径为100-300的细小熔融石英砂将母体与二氧化硅粘合剂结合，并且将至少含有粒径为100μm以下的熔融二氧化硅粉末和粒径为500〜1500μm的粗熔融石英砂的层的外部二氧化硅层接合与二氧化硅粘合剂。

6. 发明授权

US5529642A Nickel-based alloy with chromium, molybdenum and tantalum 失效
标题翻译：镍铬合金与铬，钼和钽
公开(公告)号：US5529642A
公开(公告)日：1996-06-25
申请号：US308424
申请日：1994-09-19
申请人： Katsuo Sugahara , Hideo Kitamura , Saburo Wakita , Koji Toyokura , Yoshio Takizawa , Tsutomu Takahashi
发明人： Katsuo Sugahara , Hideo Kitamura , Saburo Wakita , Koji Toyokura , Yoshio Takizawa , Tsutomu Takahashi
IPC分类号： C22C19/05 , C22C19/07
CPC分类号： C22C19/053
摘要： A nickel-based alloy which is excellent not only in anti-corrosion properties but also in workability is disclosed. The alloy contains 15 to 35 weight % of chromium; 6 to 24 weight % of molybdenum; wherein the sum of chromium plus molybdenum is no greater than 43 weight %; 1.1 to 8 weight % of tantalum; and balance nickel and unavoidable impurities. The alloy may optionally include no greater than 0.1 weight % of nitrogen; no greater than 0.3 weight % of magnesium, no greater than 3 weight % of manganese, no greater than 0.3 weight % of silicon, no greater than 0.1 weight % of carbon, no greater than 6 weight % of iron, no greater than 0.1 weight % of zirconium, no greater than 0.01 weight % of calcium, no greater than 1 weight % of niobium, no greater than 4 weight % of tungsten, no greater than 4 weight % of copper, no greater than 0.8 weight % of titanium, no greater than 0.8 weight % of aluminum, no greater than 5 weight % of cobalt, no greater than 0.5 weight % of vanadium, no greater than 2 weight % of hafnium, no greater than 3 weight % of rhenium, no greater than 1 weight % of osmium, no greater than 1 weight % of platinum, no greater than 1 weight % of ruthenium, no greater than 1 weight % of palladium, no greater than 0.1 weight % of lanthanum, no greater than 0.1 weight % of cerium, or no greater than 0.1 weight % of yttrium.
摘要翻译：公开了一种镍基合金，其不仅具有优异的耐腐蚀性，而且在加工性方面也是优异的。该合金含有15〜35重量％的铬; 6〜24重量％的钼; 其中铬和钼的总和不大于43重量％; 1.1〜8重量％的钽; 并平衡镍和不可避免的杂质。合金可以任选地包括不大于0.1重量％的氮; 不大于0.3重量％的镁，不大于3重量％的锰，不大于0.3重量％的硅，不大于0.1重量％的碳，不大于6重量％的铁，不大于0.1重量％的锆，不大于0.01重量％的钙，不大于1重量％的铌，不大于4重量％的钨，不大于4重量％的铜，不大于0.8重量％的钛，不大于0.8重量％的铝，不超过5重量％的钴，不大于0.5重量％的钒，不大于2重量％的铪，不大于3重量％的铼，不大于1重量％的锇，不大于1重量％的铂，不大于1重量％的钌，不大于1重量％的钯，不大于0.1重量％的镧，不大于0.1重量％的铈，或不大于0.1重量％的钇。

7. 发明授权

US5422072A Enhanced Co-based alloy 失效
标题翻译：增强型Co基合金
公开(公告)号：US5422072A
公开(公告)日：1995-06-06
申请号：US170384
申请日：1993-12-20
申请人： Akira Mitsuhashi , Kensho Sahira , Saburo Wakita
发明人： Akira Mitsuhashi , Kensho Sahira , Saburo Wakita
IPC分类号： C03B37/04 , C03B37/095 , C22C19/07 , C22C30/00
CPC分类号： C03B37/047 , C22C19/07 , F05B2280/10 , F05C2201/0448
摘要： A Co-based alloy exhibits superior high-temperature strength and resistance properties. In one embodiment, the Co-based alloy contains, in weight percent, from about 0.1 to about 1.2 of C; from about 0.01 to about 2 of at least one of Si and Mn; from about 22 to about 37 of Cr; from about 5 to about 15 of Ni; from about 0.1 to about 3.5 of Re; with a balance being Co and incidental impurities. Co and C, Si, Mn, Cr, Ni, Re, B, Zr, W, Mo, Ta, and Nb impart high-temperature wear resistance to the alloy to withstand repeated temperature cycling in a glass spinnaret. In one embodiment of the present invention, Hf is added to improve molten glass corrosion resistance, while Y and other rare earth elements are added in alternate embodiments to improve high-temperature oxidation resistance. Percentages by weight are disclosed for enhanced high-temperature oxidation resistance, increased fluid wear resistance and enhanced molten glass corrosion resistance.
摘要翻译： Co基合金表现出优异的高温强度和电阻性能。在一个实施方案中，Co基合金以重量百分比含有约0.1至约1.2的C; 约0.01至约2个Si和Mn中的至少一种; 从约22至约37的Cr; 约5至约15的Ni; 约0.1至约3.5的Re; 余量为Co和杂质。 Co和C，Si，Mn，Cr，Ni，Re，B，Zr，W，Mo，Ta和Nb赋予合金耐高温耐磨性，以耐受玻璃纺丝轮中的反复温度循环。在本发明的一个实施方案中，为了提高熔融玻璃的耐腐蚀性，添加了Hf，而在替代实施方案中添加了Y和其它稀土元素以改善耐高温抗氧化性。公开了重量百分比以提高高温抗氧化性，提高流体耐磨性和提高熔融玻璃耐腐蚀性。

8. 发明授权

US5122206A Precipitation hardening nickel base single crystal cast alloy 失效
标题翻译：降低镍基镍基单晶铸造合金
公开(公告)号：US5122206A
公开(公告)日：1992-06-16
申请号：US521323
申请日：1990-05-09
申请人： Saburo Wakita , Junji Hoshi , Toshiyuki Shimamura , Akira Mitsuhashi , Toshio Yonezawa
发明人： Saburo Wakita , Junji Hoshi , Toshiyuki Shimamura , Akira Mitsuhashi , Toshio Yonezawa
IPC分类号： C22C19/05 , C30B11/00
CPC分类号： C22C19/056 , C22C19/055 , C30B11/00 , C30B29/52
摘要： A precipitation strengthening type nickel base single crystal alloy, which consists essentially of, on a weight percent basis,10-30% chromium,0.1-5% niobium,0.1-8% titanium,0.1-8% aluminum,optionally one or more components selected from the group consisting of 0.1-3% tantalum, 0.05-0.5% copper, 0.05-3% hafnium, 0.05-3% rhenium, 0.05-3% molybdenum, 0.05-3% tungsten, 0.05-0.5% boron, 0.05-0.5% zirconium, andthe remainder being nickel and incidental impurities, and exhibits a narrow solidification temperature range.

9. 发明授权

US06540828B2 Method for producing crystalline silicon 有权
公开(公告)号：US06540828B2
公开(公告)日：2003-04-01
申请号：US10103797
申请日：2002-03-25
申请人： Saburo Wakita , Yoshinobu Nakada , Junichi Sasaki , Yuji Ishiwari
发明人： Saburo Wakita , Yoshinobu Nakada , Junichi Sasaki , Yuji Ishiwari
IPC分类号： C30B2502
CPC分类号： C30B29/06 , C30B11/007 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024
摘要： A simple and inexpensive method and apparatus for producing crystalline silicon comprising the steps of melting silicon in a mold, then cooling the bottom of the mold is cooled to create a positive temperature gradient from the bottom of the mold upward, thereby causing the molten silicon to crystallize from the inner bottom of the mold upward so that the solid-liquid phase boundary, separating the crystallized silicon from the molten silicon, moves upward as the molten silicon crystallizes. As the silicon crystallizes, an inert gas is blown onto the surface of the molten silicon from a position above the surface of the molten silicon, thereby vibrating the surface of the molten silicon in such a manner that cavities are formed in the surface of the molten silicon.

10. 发明授权

US06383285B1 Method for producing crystalline silicon 有权
标题翻译：晶体硅的制造方法
公开(公告)号：US06383285B1
公开(公告)日：2002-05-07
申请号：US09551568
申请日：2000-04-18
申请人： Saburo Wakita , Yoshinobu Nakada , Junichi Sasaki , Yuji Ishiwari
发明人： Saburo Wakita , Yoshinobu Nakada , Junichi Sasaki , Yuji Ishiwari
IPC分类号： C30B1328
CPC分类号： C30B29/06 , C30B11/007 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024
摘要： A simple and inexpensive method and apparatus for producing crystalline silicon comprising the steps of melting silicon in a mold, then cooling the bottom of the mold is cooled to create a positive temperature gradient from the bottom of the mold upward, thereby causing the molten silicon to crystallize from the inner bottom of the mold upward so that the solid-liquid phase boundary, separating the crystallized silicon from the molten silicon, moves upward as the molten silicon crystallizes. As the silicon crystallizes, an inert gas is blown onto the surface of the molten silicon from a position above the surface of the molten silicon, thereby vibrating the surface of the molten silicon in such a manner that cavities are formed in the surface of the molten silicon.
摘要翻译：一种用于制造晶体硅的简单且便宜的方法和装置，包括以下步骤：将模具中的硅熔化，然后冷却模具的底部，以从模具底部向上产生正温度梯度，从而使熔融硅从模具的内底部向上结晶，从而使结晶硅与熔融硅分离的固液相界面随熔融硅结晶而向上移动。当硅结晶时，惰性气体从熔融硅表面上方的位置吹到熔融硅的表面上，从而以熔融硅的表面振动熔融硅的表面，使得在熔融硅表面形成空腔硅。

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