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1. 发明授权

US07521381B2 Method for producing silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的制造方法
公开(公告)号：US07521381B2
公开(公告)日：2009-04-21
申请号：US10432861
申请日：2001-11-28
申请人： Yoshinobu Nakada , Hiroyuki Shiraki
发明人： Yoshinobu Nakada , Hiroyuki Shiraki
IPC分类号： H01L21/26 , H01L21/42 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/3225
摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
摘要翻译：将硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N2的可分解温度的氮化物气体，使得热退火在较低的温度或短时间以抑制滑移的产生并提供令人满意的表面粗糙度。

2. 发明申请

US20050130452A1 Production method for silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的生产方法
公开(公告)号：US20050130452A1
公开(公告)日：2005-06-16
申请号：US11053440
申请日：2005-02-09
申请人： Yoshinobu Nakada , Hiroyuki Shiraki
发明人： Yoshinobu Nakada , Hiroyuki Shiraki
IPC分类号： H01L21/322 , H01L21/324 , H01L21/66
CPC分类号： H01L21/3225
摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
摘要翻译：硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N 2分解温度的氮化物气体，使得热退火在较低温度或短时间内进行，以抑制滑动的产生并提供令人满意的表面粗糙度。

3. 发明授权

US08026182B2 Heat treatment jig and heat treatment method for silicon wafer 有权
标题翻译：硅片热处理夹具及热处理方法
公开(公告)号：US08026182B2
公开(公告)日：2011-09-27
申请号：US12339118
申请日：2008-12-19
申请人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
发明人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
IPC分类号： H01L21/302
CPC分类号： F27D5/0037 , F27B17/0025 , H01L21/324 , H01L21/67109 , Y10T279/23
摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.
摘要翻译：在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度彼此围绕中心。利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

4. 发明授权

US07670965B2 Production method for silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的生产方法
公开(公告)号：US07670965B2
公开(公告)日：2010-03-02
申请号：US11053440
申请日：2005-02-09
申请人： Yoshinobu Nakada , Hiroyuki Shiraki
发明人： Yoshinobu Nakada , Hiroyuki Shiraki
IPC分类号： H01L21/26 , H01L21/42 , H01L21/324 , H01L21/477 , H01L21/31
CPC分类号： H01L21/3225
摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
摘要翻译：将硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N2的可分解温度的氮化物气体，使得热退火在较低的温度或短时间以抑制滑移的产生并提供令人满意的表面粗糙度。

5. 发明授权

US07481888B2 Heat treatment jig and heat treatment method for silicon wafer 有权
标题翻译：硅片热处理夹具及热处理方法
公开(公告)号：US07481888B2
公开(公告)日：2009-01-27
申请号：US10551695
申请日：2004-03-30
申请人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
发明人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
IPC分类号： C23C16/00
CPC分类号： F27D5/0037 , F27B17/0025 , H01L21/324 , H01L21/67109 , Y10T279/23
摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.
摘要翻译：在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度彼此围绕中心。利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

6. 发明申请

US20060208434A1 Silicon wafer heat treatment jig, and silicon wafer heat treatment method 有权
标题翻译：硅晶片热处理夹具，硅晶片热处理方法
公开(公告)号：US20060208434A1
公开(公告)日：2006-09-21
申请号：US10551695
申请日：2004-03-30
申请人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
发明人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
IPC分类号： B23B31/28 , B29C71/00
CPC分类号： F27D5/0037 , F27B17/0025 , H01L21/324 , H01L21/67109 , Y10T279/23
摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.
摘要翻译：在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度彼此围绕中心。利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

7. 发明申请

US20060148249A1 Method of eliminating boron contamination in annealed wafer 有权
标题翻译：消除退火晶圆中硼污染的方法
公开(公告)号：US20060148249A1
公开(公告)日：2006-07-06
申请号：US10525442
申请日：2003-08-28
申请人： So Bae , Yoshinobu Nakada , Kenichi Kaneko
发明人： So Bae , Yoshinobu Nakada , Kenichi Kaneko
IPC分类号： H01L21/44
CPC分类号： H01L21/324 , H01L21/02046
摘要： A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided. The method includes, when annealing a silicon wafer having a surface on which a native oxide film has formed and boron of environmental origin or from chemical treatment prior to annealing has deposited, steps of carrying out temperature heat-up in a mixed gas atmosphere having a mixing ratio of hydrogen gas to inert gas of 5% to 100% so as to remove the boron-containing native oxide film, followed by annealing in an inert gas atmosphere.
摘要翻译：防止硅晶片在表面附近增加硼浓度并且在退火晶片的表面与硅体之间不产生硼浓度的差异以消除由退火处理引起的硅晶片中的硼污染的方法是提供。该方法包括：在退火之后退火具有形成有自然氧化膜的表面和环境来源的硼或退火之前的化学处理的硅晶片退火时，在具有氢气与惰性气体的混合比为5％〜100％，除去含硼自然氧化膜，然后在惰性气体气氛中进行退火。

8. 发明授权

US06663708B1 Silicon wafer, and manufacturing method and heat treatment method of the same 有权
标题翻译：硅晶片及其制造方法和热处理方法相同
公开(公告)号：US06663708B1
公开(公告)日：2003-12-16
申请号：US09667885
申请日：2000-09-22
申请人： Etsuro Morita , Takaaki Shiota , Yoshihisa Nonogaki , Yoshinobu Nakada , Hisashi Furuya , Hiroshi Koya , Jun Furukawa , Hideo Tanaka , Yuji Nakata
发明人： Etsuro Morita , Takaaki Shiota , Yoshihisa Nonogaki , Yoshinobu Nakada , Hisashi Furuya , Hiroshi Koya , Jun Furukawa , Hideo Tanaka , Yuji Nakata
IPC分类号： C30B3302
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225
摘要： An ingot is manufactured by pulling it up such that V/Ga and V/Gb become 0.23 to 0.50 mm2/minute ° C., respectively, where V (mm/minute) is a pulling-up speed, and Ga (° C./mm) is and axial temperature gradient at the center of the ingot and Gb (° C./mm) is an axial temperature gradient at the edge of the ingot at temperatures in a range of 1,300° C. to a melting pointy of silicon. A wafer obtained by slicing the ingot is heat treated in a reductive atmosphere at temperature in a renge of 1,050° C. to 1,220° C. for 30 to 150 minutes. A silicon wafer free of OSF's, free of COP's, and substantially free of contamination such as Fe and of occurence of slip, is obtained.
摘要翻译：通过将其拉起来使得V / Ga和V / Gb分别变为0.23至0.50mm 2 /分钟℃来制造锭，其中V（mm /分钟）是拉升速度，Ga（ °C / mm）是在晶锭中心的轴向温度梯度，Gb（℃/ mm）是在锭的边缘处的温度在1300℃的温度下的轴向温度梯度到熔化硅尖锐通过将锭切片获得的晶片在1050℃至1220℃的温度下在还原气氛中热处理30至150分钟。没有OSF的硅晶片没有COP，并且基本上没有诸如Fe的污染和滑动的发生。

9. 发明申请

US20070076051A1 Liquid ejection head and manufacturing method thereof 审中-公开
标题翻译：液体喷射头及其制造方法
公开(公告)号：US20070076051A1
公开(公告)日：2007-04-05
申请号：US11528433
申请日：2006-09-28
申请人： Takamichi Fujii , Yoshinobu Nakada , Yukio Sakashita , Yoshikazu Hishinuma
发明人： Takamichi Fujii , Yoshinobu Nakada , Yukio Sakashita , Yoshikazu Hishinuma
IPC分类号： B41J2/155
CPC分类号： B41J2/161 , B41J2/14233 , B41J2/1626 , B41J2/1632 , B41J2/1646 , B41J2002/14491 , B41J2202/18
摘要： The liquid ejection head has a liquid ejection device which ejects liquid and is partially formed of a directionally solidified silicon substrate.
摘要翻译：液体喷射头具有喷射液体并部分地由定向凝固的硅基板形成的液体喷射装置。

10. 发明授权

US07199057B2 Method of eliminating boron contamination in annealed wafer 有权
标题翻译：消除退火晶圆中硼污染的方法
公开(公告)号：US07199057B2
公开(公告)日：2007-04-03
申请号：US10525442
申请日：2003-08-28
申请人： So Ik Bae , Yoshinobu Nakada , Kenichi Kaneko
发明人： So Ik Bae , Yoshinobu Nakada , Kenichi Kaneko
IPC分类号： H01L21/311 , H01L21/322
CPC分类号： H01L21/324 , H01L21/02046
摘要： A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided. The method includes, when annealing a silicon wafer having a surface on which a native oxide film has formed and boron of environmental origin or from chemical treatment prior to annealing has deposited, steps of carrying out temperature heat-up in a mixed gas atmosphere having a mixing ratio of hydrogen gas to inert gas of 5% to 100% so as to remove the boron-containing native oxide film, followed by annealing in an inert gas atmosphere.
摘要翻译：防止硅晶片在表面附近增加硼浓度并且在退火晶片的表面与硅体之间不产生硼浓度的差异以消除由退火处理引起的硅晶片中的硼污染的方法是提供。该方法包括：在退火之后退火具有形成有自然氧化膜的表面和环境来源的硼或退火之前的化学处理的硅晶片退火时，在具有氢气与惰性气体的混合比为5％〜100％，除去含硼自然氧化膜，然后在惰性气体气氛中进行退火。

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