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1. 发明申请

US20090127746A1 HEAT TREATMENT JIG AND HEAT TREATMENT METHOD FOR SILICON WAFER 有权
标题翻译：热处理加热和硅热处理方法
公开(公告)号：US20090127746A1
公开(公告)日：2009-05-21
申请号：US12339118
申请日：2008-12-19
申请人： Yoshinobu NAKADA , Hiroyuki Shiraki , Takeshi Hasegawa
发明人： Yoshinobu NAKADA , Hiroyuki Shiraki , Takeshi Hasegawa
IPC分类号： B29C71/02
CPC分类号： F27D5/0037 , F27B17/0025 , H01L21/324 , H01L21/67109 , Y10T279/23
摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.
摘要翻译：在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度彼此围绕中心。利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

2. 发明授权

US08026182B2 Heat treatment jig and heat treatment method for silicon wafer 有权
标题翻译：硅片热处理夹具及热处理方法
公开(公告)号：US08026182B2
公开(公告)日：2011-09-27
申请号：US12339118
申请日：2008-12-19
申请人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
发明人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
IPC分类号： H01L21/302
CPC分类号： F27D5/0037 , F27B17/0025 , H01L21/324 , H01L21/67109 , Y10T279/23
摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.
摘要翻译：在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度彼此围绕中心。利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

3. 发明授权

US07481888B2 Heat treatment jig and heat treatment method for silicon wafer 有权
标题翻译：硅片热处理夹具及热处理方法
公开(公告)号：US07481888B2
公开(公告)日：2009-01-27
申请号：US10551695
申请日：2004-03-30
申请人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
发明人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
IPC分类号： C23C16/00
CPC分类号： F27D5/0037 , F27B17/0025 , H01L21/324 , H01L21/67109 , Y10T279/23
摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.
摘要翻译：在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度彼此围绕中心。利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

4. 发明申请

US20060208434A1 Silicon wafer heat treatment jig, and silicon wafer heat treatment method 有权
标题翻译：硅晶片热处理夹具，硅晶片热处理方法
公开(公告)号：US20060208434A1
公开(公告)日：2006-09-21
申请号：US10551695
申请日：2004-03-30
申请人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
发明人： Yoshinobu Nakada , Hiroyuki Shiraki , Takeshi Hasegawa
IPC分类号： B23B31/28 , B29C71/00
CPC分类号： F27D5/0037 , F27B17/0025 , H01L21/324 , H01L21/67109 , Y10T279/23
摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.
摘要翻译：在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度彼此围绕中心。利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

5. 发明授权

US06534774B2 Method and apparatus for evaluating the quality of a semiconductor substrate 有权
标题翻译：用于评估半导体衬底的质量的方法和装置
公开(公告)号：US06534774B2
公开(公告)日：2003-03-18
申请号：US09815208
申请日：2001-03-22
申请人： Takeshi Hasegawa , Terumi Ito , Hiroyuki Shiraki
发明人： Takeshi Hasegawa , Terumi Ito , Hiroyuki Shiraki
IPC分类号： G01N2164
CPC分类号： G01N21/6489 , G01N21/6408
摘要： A first chopper between a laser device and a semiconductor substrate chops an excitation light at a specific frequency, and a second chopper between the first chopper and the semiconductor substrate chops the excitation light at a variable frequency higher than the first chopper. A photoluminescence light emitted by the semiconductor substrate when the semiconductor substrate is intermittently irradiated with the excitation light is introduced into a monochromator. A controller obtains the decay time constant T of the photoluminescence light from variation of the average intensity of the photoluminescence light when gradually increasing the chopping frequency of the excitation light by controlling the second chopper, and computes the life time &tgr; of the semiconductor substrate from an expression “&tgr;=T/C”, where C is a constant. An object of the invention is to accurately evaluate impurities, defects and the like in a semiconductor substrate by obtaining quantitatively the life time of the semiconductor substrate having a long life time.
摘要翻译：激光装置与半导体基板之间的第一斩波器以特定频率切断激励光，第一斩波器与半导体基板之间的第二斩波器以比第一斩波器高的可变频率对激发光进行斩波。当半导体衬底间歇地用激发光照射时，由半导体衬底发射的光致发光被引入到单色器中。控制器通过控制第二斩波器逐渐增加激发光的斩波频率，从光致发光光的平均强度的变化中获得光致发光光的衰减时间常数T，并计算半导体衬底的寿命τ 表达式“tau = T / C”，其中C是常数。本发明的目的是通过定量地获得具有长寿命的半导体衬底的寿命来准确地评估半导体衬底中的杂质，缺陷等。

6. 发明授权

US06693286B2 Method for evaluating the quality of a semiconductor substrate 有权
标题翻译：用于评估半导体衬底的质量的方法
公开(公告)号：US06693286B2
公开(公告)日：2004-02-17
申请号：US10299148
申请日：2002-11-19
申请人： Takeshi Hasegawa , Terumi Ito , Hiroyuki Shiraki
发明人： Takeshi Hasegawa , Terumi Ito , Hiroyuki Shiraki
IPC分类号： G01N2164
CPC分类号： G01N21/6489 , G01N21/6408
摘要： A first chopper between a laser device and a semiconductor substrate chops an excitation light at a specific frequency, and a second chopper between the first chopper and the semiconductor substrate chops the excitation light at a variable frequency higher than the first chopper. A photoluminescence light emitted by the semiconductor substrate when the semiconductor substrate is intermittently irradiated with the excitation light is introduced into a monochromator. A controller obtains the decay time constant T of the photoluminescence light from variation of the average intensity of the photoluminescence light when gradually increasing the chopping frequency of the excitation light by controlling the second chopper, and computes the life time &tgr; of the semiconductor substrate from an expression “&tgr;=T/C”, where C is a constant. An object of the invention is to accurately evaluate impurities, defects and the like in a semiconductor substrate by obtaining quantitatively the life time of the semiconductor substrate having a long life time.
摘要翻译：激光装置与半导体基板之间的第一斩波器以特定频率切断激励光，第一斩波器与半导体基板之间的第二斩波器以比第一斩波器高的可变频率对激发光进行斩波。当半导体衬底间歇地用激发光照射时，由半导体衬底发射的光致发光被引入到单色器中。控制器通过控制第二斩波器逐渐增加激发光的斩波频率，从光致发光光的平均强度的变化中获得光致发光光的衰减时间常数T，并计算半导体衬底的寿命τ 表达式“tau = T / C”，其中C是常数。本发明的目的是通过定量地获得具有长寿命的半导体衬底的寿命来准确地评估半导体衬底中的杂质，缺陷等。

7. 发明申请

US20120130082A1 1-Substituted-4-Nitroimidazole Compound and Method for Preparing the Same 审中-公开
标题翻译： 1-取代的4-硝基咪唑化合物及其制备方法
公开(公告)号：US20120130082A1
公开(公告)日：2012-05-24
申请号：US13362646
申请日：2012-01-31
申请人： Fumitaka GOTO , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka GOTO , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D405/06 , C07D233/92 , C07D233/84
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH2RA的基团; X是卤素原子或基团-S（O）n -R1）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

8. 发明申请

US20090316152A1 Spectrometric analyzing device and spectrometric analyzing method 有权
标题翻译：光谱分析装置和光谱分析方法
公开(公告)号：US20090316152A1
公开(公告)日：2009-12-24
申请号：US12310865
申请日：2007-12-21
申请人： Takeshi Hasegawa
发明人： Takeshi Hasegawa
IPC分类号： G01N21/17
CPC分类号： G01N21/21 , G01J3/447 , G01N21/31 , G01N21/8422
摘要： A spectrometric analyzing device is capable of analyzing a thin film with high accuracy by using light having an arbitrary wavelength, such as not only infrared light but also visible light, ultraviolet light and X-ray, and using whatever refractive index of a supporting member of the thin film. A spectrometric analyzing device comprises a light source (1), a polarizing filter (2), a detection unit (3), a regression operation unit (4) and an absorbance spectrum calculation unit (5). The light source (1) emits light at n different angles of incidence (θn) to a measurement portion. The polarizing filter (2) shields an s-polarized component. The detection unit (3) detects transmitted spectra (S). The regression operation unit (4) uses the transmitted spectra (S) and a mixing ratio (R) to obtain an in-plane mode spectrum (sip) and an out-of-plane mode spectrum (sop) through a regression analysis. The absorbance spectrum calculation unit (5) calculates an in-plane mode absorbance spectrum (Aip) and an out-of-plane mode absorbance spectrum (Aop) of the thin film, based on the results from a state in which the thin film is on the supporting member and a state in which no thin film is on the supporting member.
摘要翻译：光谱分析装置能够通过使用具有任意波长的光，例如不仅具有红外光，还包括可见光，紫外光和X射线，并且使用任何波长的光的任何折射率，能够高精度地分析薄膜薄膜。光谱分析装置包括光源（1），偏振滤光器（2），检测单元（3），回归运算单元（4）和吸收光谱计算单元（5）。光源（1）将n个不同入射角（thetan）的光发射到测量部分。偏振滤光器（2）屏蔽s偏振分量。检测单元（3）检测发送光谱（S）。回归运算单元（4）使用透射光谱（S）和混合比（R），通过回归分析获得平面内模式谱（sip）和平面外模式谱（sop）。吸光度光谱计算单元（5）根据薄膜为（1）的状态的结果，计算出薄膜的面内模式吸收光谱（Aip）和平面外模式吸收光谱（Aop）在支撑构件上并且在支撑构件上没有薄膜的状态。

9. 发明授权

US07341280B2 Rehabilitating pipe and method for laying a rehabilitating pipe 有权
标题翻译：修复管道和铺设修复管道的方法
公开(公告)号：US07341280B2
公开(公告)日：2008-03-11
申请号：US11031256
申请日：2005-01-07
申请人： Takao Kamiyama , Koji Kaneta , Kenji Fujii , Takeshi Hasegawa , Makoto Ishida
发明人： Takao Kamiyama , Koji Kaneta , Kenji Fujii , Takeshi Hasegawa , Makoto Ishida
IPC分类号： F16L55/18
CPC分类号： E03F3/06 , E03F2003/065 , F16L55/1657
摘要： A rehabilitating pipe is assembled inside an existing pipe using segments to repair the existing pipe. A coupling member is inserted through a segment when it is coupled in the longitudinal direction to another segment coupled already, and the coupling member is joined to the coupling member of another segment already coupled. During joining the segment is clamped against another segment and both the segments are coupled in the longitudinal direction. Such steps are repeated to couple other segments to segments already coupled until the rehabilitating pipe is laid to a predetermined length.
摘要翻译：修复管道在现有的管道内组装，使用段来修复现有的管道。当联接构件在纵向方向上联接到已经联接的另一段时，联接构件被插入通过段，并且联接构件连接到已经联接的另一段的联接构件。在接合期间，该段被夹紧在另一段上，并且两个段在纵向方向上联接。重复这些步骤以将其他段连接到已经联接的段，直到修复管被铺设到预定长度。

10. 发明授权

US07308472B2 System allowing data input device to request management server to assign a data input job to itself 有权
标题翻译：执行数据输入作业的方法和系统
公开(公告)号：US07308472B2
公开(公告)日：2007-12-11
申请号：US10455615
申请日：2003-06-06
申请人： Takeshi Hasegawa
发明人： Takeshi Hasegawa
IPC分类号： G06F15/16
CPC分类号： H04L67/16 , H04L29/06 , H04L67/28 , H04L67/2852
摘要： A management server receives from a server storing information a request that a data input job be executed and from a data input device a request to assign a data input job to itself. The management server makes a list of information to be digitized through data input, based on information held on itself and input-specific information obtained from the server storing information, and transmits the list to a data input device adequate to the data input job. The data input device selects information as data input preference. The data input device obtains the selected information from the server storing information. Through the data input device, its operator inputs the obtained information as computer-usable data. The input data is transmitted to the server storing information. The management server stores, updates, and manages diverse data about input jobs.
摘要翻译：管理服务器从存储信息的服务器接收数据输入作业的请求，并从数据输入装置接收将数据输入作业分配给其自身的请求。管理服务器根据自身保存的信息和通过存储信息从服务器获取的输入特定信息，通过数据输入来进行数字化的信息列表的发送，并将该列表发送到数据输入作业的数据输入装置。数据输入设备选择信息作为数据输入偏好。数据输入装置从存储信息的服务器中获取选择的信息。通过数据输入设备，其操作员将所获得的信息输入为计算机可用的数据。将输入数据发送到存储信息的服务器。管理服务器存储，更新和管理有关输入作业的各种数据。

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