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1. 发明授权

US08643069B2 Semiconductor device having metal gate and manufacturing method thereof 有权
标题翻译：具有金属栅极的半导体器件及其制造方法
公开(公告)号：US08643069B2
公开(公告)日：2014-02-04
申请号：US13180556
申请日：2011-07-12
申请人： Chun-Wei Hsu , Po-Cheng Huang , Teng-Chun Tsai , Chia-Lin Hsu , Chih-Hsun Lin , Yen-Ming Chen , Chia-Hsi Chen , Chang-Hung Kung
发明人： Chun-Wei Hsu , Po-Cheng Huang , Teng-Chun Tsai , Chia-Lin Hsu , Chih-Hsun Lin , Yen-Ming Chen , Chia-Hsi Chen , Chang-Hung Kung
IPC分类号： H01L29/76 , H01L21/02
CPC分类号： H01L21/28008 , H01L21/28123 , H01L21/31053 , H01L29/165 , H01L29/4966 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate.
摘要翻译：具有金属栅极的半导体器件包括具有形成在其中的至少一个金属栅极的多个浅沟槽隔离物（STI）的基板，以及分别位于金属的两侧的至少一对辅助虚设结构门和衬底上。

2. 发明授权

US08614132B2 Integrated circuit device with well controlled surface proximity and method of manufacturing same 有权
标题翻译：具有良好控制的表面接近的集成电路器件及其制造方法
公开(公告)号：US08614132B2
公开(公告)日：2013-12-24
申请号：US13240025
申请日：2011-09-22
申请人： Ming-Huan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
发明人： Ming-Huan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
IPC分类号： H01L21/336
CPC分类号： H01L29/66515 , H01L21/265 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.
摘要翻译：公开了一种用于制造集成电路器件的集成电路器件和方法。所公开的方法提供对集成电路器件的表面接近度和尖端深度的改进的控制。在一个实施例中，该方法通过在器件的源极和漏极区域中形成掺杂区域和轻掺杂源极和漏极（LDD）区域来实现改进的控制。掺杂区域注入与LDD区域相反的掺杂剂类型。

3. 发明申请

US20130277750A1 Semiconductor Device and Method for Forming Same 有权
公开(公告)号：US20130277750A1
公开(公告)日：2013-10-24
申请号：US13451261
申请日：2012-04-19
申请人： Jui-Yao Lai , Chun-Yi Lee , Shyh-Wei Wang , Yen-Ming Chen
发明人： Jui-Yao Lai , Chun-Yi Lee , Shyh-Wei Wang , Yen-Ming Chen
IPC分类号： H01L27/06 , H01L27/08
CPC分类号： H01L28/24 , H01L21/823842 , H01L23/5228 , H01L27/0629 , H01L27/0802 , H01L28/20 , H01L29/0649 , H01L29/0847 , H01L2924/0002 , H01L2924/00
摘要： A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers of conductive materials, with a dielectric layer filling the remainder of the U-shape. The resistor may be integrated with a dual metal gate manufacturing process or may be integrated with multiple types of resistors.

4. 发明申请

US20130105912A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130105912A1
公开(公告)日：2013-05-02
申请号：US13283603
申请日：2011-10-28
申请人： Chun-Wei Hsu , Po-Cheng Huang , Ren-Peng Huang , Jie-Ning Yang , Chia-Lin Hsu , Teng-Chun Tsai , Chih-Hsun Lin , Chang-Hung Kung , Yen-Ming Chen , Yu-Ting Li
发明人： Chun-Wei Hsu , Po-Cheng Huang , Ren-Peng Huang , Jie-Ning Yang , Chia-Lin Hsu , Teng-Chun Tsai , Chih-Hsun Lin , Chang-Hung Kung , Yen-Ming Chen , Yu-Ting Li
IPC分类号： H01L27/06 , H01L21/8234
CPC分类号： H01L27/0629
摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the substrate of the resistor region; forming a tank in the STI of the resistor region; and forming a resistor in the tank and on the surface of the STI adjacent to two sides of the tank.
摘要翻译：公开了半导体器件的制造方法。该方法包括以下步骤：提供具有晶体管区域和电阻器区域的衬底; 在电阻器区域的衬底上形成浅沟槽隔离（STI）; 在电阻区域的STI中形成槽; 并且在罐中形成电阻器，并且在与槽的两侧相邻的STI的表面上形成电阻器。

5. 发明授权

US08362573B2 Integrated circuits and manufacturing methods thereof 有权
标题翻译：集成电路及其制造方法
公开(公告)号：US08362573B2
公开(公告)日：2013-01-29
申请号：US12787966
申请日：2010-05-26
申请人： Chung-Cheng Wu , Ali Keshavarzi , Ka Hing Fung , Ta-Pen Guo , Jiann-Tyng Tzeng , Yen-Ming Chen , Shyue-Shyh Lin , Shyh-Wei Wang , Sheng-Jier Yang , Hsiang-Jen Tseng , David B. Scott , Min Cao
发明人： Chung-Cheng Wu , Ali Keshavarzi , Ka Hing Fung , Ta-Pen Guo , Jiann-Tyng Tzeng , Yen-Ming Chen , Shyue-Shyh Lin , Shyh-Wei Wang , Sheng-Jier Yang , Hsiang-Jen Tseng , David B. Scott , Min Cao
IPC分类号： H01L29/76
CPC分类号： H01L29/665 , H01L21/823807 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L27/0207 , H01L27/092 , H01L29/7848 , H01L2224/16225
摘要： An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is spaced from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. The first metallic layer is electrically coupled with the first source region. The first metallic layer and the first diffusion area overlap with a first distance. A second metallic layer is electrically coupled with the first drain region and the second drain region. The second metallic layer and the first diffusion area overlap with a second distance. The first distance is larger than the second distance.
摘要翻译：集成电路包括用于第一类型晶体管的第一扩散区域。第一类型晶体管包括第一漏极区域和第一源极区域。用于第二类型晶体管的第二扩散区域与第一扩散区域间隔开。第二类型晶体管包括第二漏极区域和第二源极区域。栅电极在布线方向上连续延伸穿过第一扩散区域和第二扩散区域。第一金属层与第一源区电耦合。第一金属层和第一扩散区域与第一距离重叠。第二金属层与第一漏极区域和第二漏极区域电耦合。第二金属层和第一扩散区域与第二距离重叠。第一距离大于第二距离。

6. 发明申请

US20130015524A1 SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：具有金属门的半导体器件及其制造方法
公开(公告)号：US20130015524A1
公开(公告)日：2013-01-17
申请号：US13180556
申请日：2011-07-12
申请人： Chun-Wei Hsu , Po-Cheng Huang , Teng-Chun Tsai , Chia-Lin Hsu , Chih-Hsun Lin , Yen-Ming Chen , Chia-Hsi Chen , Chang-Hung Kung
发明人： Chun-Wei Hsu , Po-Cheng Huang , Teng-Chun Tsai , Chia-Lin Hsu , Chih-Hsun Lin , Yen-Ming Chen , Chia-Hsi Chen , Chang-Hung Kung
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L21/28008 , H01L21/28123 , H01L21/31053 , H01L29/165 , H01L29/4966 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate.
摘要翻译：具有金属栅极的半导体器件包括具有形成在其中的至少一个金属栅极的至少一个金属栅极和分别位于该金属的两侧的至少一对辅助虚拟结构的基板，其中形成有多个浅沟槽隔离物（STI）门和衬底上。

7. 发明申请

US20120068568A1 Axial Winding Motor 审中-公开
标题翻译：轴向绕组电机
公开(公告)号：US20120068568A1
公开(公告)日：2012-03-22
申请号：US12938469
申请日：2010-11-03
申请人： Alex Horng , Yen-Ming Chen , Chung-Ken Cheng
发明人： Alex Horng , Yen-Ming Chen , Chung-Ken Cheng
IPC分类号： H02K1/27
CPC分类号： H02K1/145 , H02K21/22 , H02K29/03
摘要： An axial-winding motor includes a stator and a rotor. The stator has a winding assembly, a first magnetic-conducting plate and a second magnetic-conducting plate. The first and second magnetic-conducting plates are coupled with two ends of the winding assembly in an axial direction of the winding assembly. The first magnetic-conducting plate includes a plurality of first pole pieces on an outer periphery thereof, and the second magnetic-conducting plate includes a plurality of second pole pieces on an outer periphery thereof. The rotor is rotatably coupled with the stator and has a plurality of magnetic pole faces facing the stator. One of the first pole pieces is at least partially overlapped with adjacent one of the second pole pieces in an axial direction of the stator.
摘要翻译：轴向电动机包括定子和转子。定子具有绕组组件，第一导电板和第二导磁板。第一和第二导电板在绕组组件的轴向方向上与绕组组件的两端耦合。第一导电板包括在其外周上的多个第一极靴，并且第二导电板在其外周上包括多个第二极靴。转子与定子可旋转地联接并且具有面向定子的多个磁极面。第一极靴中的一个在定子的轴向方向上至少部分地与相邻的一个第二极靴重叠。

8. 发明申请

US20110291197A1 INTEGRATED CIRCUITS AND MANUFACTURING METHODS THEREOF 有权
标题翻译：集成电路及其制造方法
公开(公告)号：US20110291197A1
公开(公告)日：2011-12-01
申请号：US12787966
申请日：2010-05-26
申请人： Chung-Cheng WU , Ali KESHAVARZI , Ka Hing FUNG , Ta-Pen GUO , Jiann-Tyng TZENG , Yen-Ming CHEN , Shyue-Shyh LIN , Shyh-Wei WANG , Sheng-Jier YANG , Hsiang-Jen TSENG , David B. SCOTT , Min CAO
发明人： Chung-Cheng WU , Ali KESHAVARZI , Ka Hing FUNG , Ta-Pen GUO , Jiann-Tyng TZENG , Yen-Ming CHEN , Shyue-Shyh LIN , Shyh-Wei WANG , Sheng-Jier YANG , Hsiang-Jen TSENG , David B. SCOTT , Min CAO
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L29/665 , H01L21/823807 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L27/0207 , H01L27/092 , H01L29/7848 , H01L2224/16225
摘要： An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is spaced from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. The first metallic layer is electrically coupled with the first source region. The first metallic layer and the first diffusion area overlap with a first distance. A second metallic layer is electrically coupled with the first drain region and the second drain region. The second metallic layer and the first diffusion area overlap with a second distance. The first distance is larger than the second distance.
摘要翻译：集成电路包括用于第一类型晶体管的第一扩散区域。第一类型晶体管包括第一漏极区域和第一源极区域。用于第二类型晶体管的第二扩散区域与第一扩散区域间隔开。第二类型晶体管包括第二漏极区域和第二源极区域。栅电极在布线方向上连续延伸穿过第一扩散区域和第二扩散区域。第一金属层与第一源区电耦合。第一金属层和第一扩散区域与第一距离重叠。第二金属层与第一漏极区域和第二漏极区域电耦合。第二金属层和第一扩散区域与第二距离重叠。第一距离大于第二距离。

9. 发明申请

US20090194742A1 Reforming system for methanol and method thereof 审中-公开
标题翻译：甲醇改造体系及其方法
公开(公告)号：US20090194742A1
公开(公告)日：2009-08-06
申请号：US12068136
申请日：2008-02-04
申请人： Ryan Yeh , Yen-Ming Chen , Chun-Hsien Wu , Chung-Ming Lin , Yu-Cheng Lin
发明人： Ryan Yeh , Yen-Ming Chen , Chun-Hsien Wu , Chung-Ming Lin , Yu-Cheng Lin
IPC分类号： C01B3/38 , B01J19/24
CPC分类号： B01J8/0214 , B01J4/002 , B01J8/0278 , B01J8/0285 , B01J2208/00176 , B01J2208/00203 , B01J2208/00309 , B01J2208/00628 , C01B3/323 , C01B3/56 , C01B2203/0233 , C01B2203/042 , C01B2203/0475 , C01B2203/0811 , C01B2203/12 , C01B2203/1223 , C01B2203/1276
摘要： A reforming system for methanol comprises a reactor and a fuel unit disposed in front of the reactor. The reactor comprises an inlet, an outlet, a reaction chamber between the inlet and the outlet, and a combustion chamber surrounding the reaction chamber. The reaction chamber has a catalyzing unit thereinside. The reactor is constructed for maintaining the reaction chamber at a predetermined temperature so that at least one reactant acts to produce at least one product in the reaction chamber. The fuel unit comprises a first fuel container, a second fuel container, a mixing chamber connected to the first fuel container and the second fuel container, and a nebulizing device connected to the mixing chamber. The reforming system for methanol can produce hydrogen (H2) and the secondary products are recycled.
摘要翻译：用于甲醇的重整系统包括设置在反应器前面的反应器和燃料单元。反应器包括入口，出口，入口和出口之间的反应室以及围绕反应室的燃烧室。反应室内有催化单元。反应器被构造用于将反应室保持在预定温度，使得至少一个反应物起作用以在反应室中产生至少一种产物。燃料单元包括第一燃料容器，第二燃料容器，连接到第一燃料容器和第二燃料容器的混合室以及连接到混合室的雾化装置。甲醇的重整体系可以产生氢气（H2），二次产物回收利用。

10. 发明申请

US20090179816A1 Antenna system for producing circular polarized waves with PIFAs 审中-公开
标题翻译：用PIFAs产生圆偏振波的天线系统
公开(公告)号：US20090179816A1
公开(公告)日：2009-07-16
申请号：US12116966
申请日：2008-05-08
申请人： Yen-Ming Chen , Cheng-Chi Hu
发明人： Yen-Ming Chen , Cheng-Chi Hu
IPC分类号： H01Q1/50 , H01Q1/38
CPC分类号： H01Q21/24 , H01Q9/0421
摘要： Two PIFAs substantially perpendicular to each other have feed points facing each other and ends connected. A phase transformer is coupled to one of the PIFAs to produce a phase difference of 90 degrees in electric fields generated by these two PIFAs so as to generate circular polarized waves.
摘要翻译：基本上彼此垂直的两个PIFA具有彼此相对并且端部连接的馈电点。相变器耦合到一个PIF以产生由这两个PIFA产生的电场中90度的相位差，以产生圆极化波。

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