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1. 发明申请

US20130069032A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER 有权
标题翻译：半导体发光装置，散热器，制造半导体发光装置的方法及制造方法
公开(公告)号：US20130069032A1
公开(公告)日：2013-03-21
申请号：US13406705
申请日：2012-02-28
申请人： Mitsuhiro KUSHIBE , Yasuo OHBA , Hiroshi KATSUNO , Kei KANEKO , Shinji YAMADA
发明人： Mitsuhiro KUSHIBE , Yasuo OHBA , Hiroshi KATSUNO , Kei KANEKO , Shinji YAMADA
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一层n型和第二层p型，包括氮化物半导体，设置在第一和第二层之间的发光单元，第一层叠结构，第一层和发光单元，以及设置在第一层和第一堆叠结构之间的第二堆叠结构。发光单元包括阻挡层和设置在阻挡层之间的阱层。第一堆叠结构包括包括氮化物半导体的第三层和与第三层堆叠并包括GaInN的第四层。第四层具有比阱层更薄的厚度。第二堆叠结构包括包括氮化物半导体的第五层和与第五层堆叠并包括GaInN的第六层。第六层的厚度比井层薄。

2. 发明申请

US20120217531A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置，半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20120217531A1
公开(公告)日：2012-08-30
申请号：US13204021
申请日：2011-08-05
申请人： Hiroshi KATSUNO , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi KATSUNO , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/40 , H01L33/50
CPC分类号： H01L33/405 , H01L24/32 , H01L33/40 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体和电极。叠层结构体具有包括氮化物系半导体的第一导电型第一半导体层，包含氮化物系半导体的第二导电型第二半导体层和设置在第一半导体层与第二半导体层之间的发光层。电极具有第一，第二和第三金属层。第一金属层设置在第二半导体层上并且包括银或银合金。第二金属层设置在第一金属层上，并且包括铂，钯，铑，铱，钌，锇中的至少一种元素。第三金属层设置在第二金属层上。沿第一至第二半导体层的方向的第三金属层的厚度等于或大于第二金属层的厚度。

3. 发明申请

US20130069033A1 SEMICONDUCTOR DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING WAFER 有权
标题翻译：半导体器件，滤波器，制造半导体器件的方法和制造方法
公开(公告)号：US20130069033A1
公开(公告)日：2013-03-21
申请号：US13406740
申请日：2012-02-28
申请人： Mitsuhiro KUSHIBE , Yasuo OHBA , Hiroshi KATSUNO , Kei KANEKO , Shinji YAMADA
发明人： Mitsuhiro KUSHIBE , Yasuo OHBA , Hiroshi KATSUNO , Kei KANEKO , Shinji YAMADA
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit.
摘要翻译：根据一个实施例，半导体器件包括包括氮化物半导体的n型第一层，包括氮化物半导体的p型第二层，发光单元和第一层叠体。发光单元设置在第一和第二层之间。第一层叠体设置在第一层和发光单元之间。第一层叠体包括多个包含AlGaInN的第三层和与第三层交替堆叠并包括GaInN的多个第四层。第一层叠体具有面向发光单元的第一表面。第一层叠体具有设置在第一表面中的凹陷。发光单元的一部分嵌入凹部的一部分。第二层的一部分设置在发光单元的一部分上。

4. 发明申请

US20100059734A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
标题翻译：半导体发光器件和散热器
公开(公告)号：US20100059734A1
公开(公告)日：2010-03-11
申请号：US12505053
申请日：2009-07-17
申请人： Kei KANEKO , Yasuo OHBA , Hiroshi KATSUNO , Mitsuhiro Kushibe
发明人： Kei KANEKO , Yasuo OHBA , Hiroshi KATSUNO , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/325
摘要： A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
摘要翻译：半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。发光部包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）构成的多个阻挡层，以及设置在每对多个阻挡层并由GaInN或AlGaInN制成。多个阻挡层具有最近的阻挡层和远的阻挡层。最近的阻挡层最接近多个阻挡层中的第二层。最近的阻挡层包括第一部分和第二部分。第一部分由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成。第二部分设置在第一部分和第二层之间，并由Al x Ga 1-x-y In y N（0＆lt; n 1; x，0＆n 1; y，x + y和n 1; 1）制成。第二部分中的Si浓度低于第一部分中的Si浓度，并且低于远阻隔层中的Si浓度。

5. 发明申请

US20130146914A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
公开(公告)号：US20130146914A1
公开(公告)日：2013-06-13
申请号：US13679109
申请日：2012-11-16
申请人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/58
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2224/05001 , H01L2224/05124 , H01L2224/05139 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/16145 , H01L2224/32013 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2924/00014 , H01L2924/013
摘要： A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.

6. 发明申请

US20100051978A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100051978A1
公开(公告)日：2010-03-04
申请号：US12400236
申请日：2009-03-09
申请人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/05026 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2924/00014 , H01L2924/01013 , H01L2924/013 , H01L2924/01078
摘要： A semiconductor light emitting device includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer; a first electrode connected to the n-type semiconductor layer and containing at least one of silver and a silver alloy; and a second electrode connected to the p-type semiconductor layer.
摘要翻译：半导体发光器件包括：包括n型半导体层，p型半导体层和设置在n型半导体层和p型半导体层之间的发光层的层叠结构体; 连接到n型半导体层并且包含银和银合金中的至少一种的第一电极; 以及连接到p型半导体层的第二电极。

7. 发明申请

US20100051995A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
标题翻译：制造半导体发光装置和半导体发光装置的方法
公开(公告)号：US20100051995A1
公开(公告)日：2010-03-04
申请号：US12549048
申请日：2009-08-27
申请人： Hiroshi KATSUNO , Yasuo OHBA , Kei KANEKO , Mitsuhiro KUSHIBE
发明人： Hiroshi KATSUNO , Yasuo OHBA , Kei KANEKO , Mitsuhiro KUSHIBE
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2224/05001 , H01L2224/05124 , H01L2224/05139 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/16145 , H01L2224/32013 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2924/00014 , H01L2924/013
摘要： A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.
摘要翻译：一种制造半导体发光装置的方法包括使半导体发光器件和安装构件彼此面对。半导体发光器件包括层叠结构单元，其包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，设置在堆叠结构的主表面上的第一电极连接到第一半导体层的单元，设置在层叠结构单元的主表面上以连接到第二半导体层的第二电极，以及设置在主表面的第一半导体层和第二半导体层上的电介质堆叠膜不被第一电极和第二电极覆盖，由具有不同折射率的堆叠电介质膜形成，并且包括竖立在第一和第二电极中的至少一个的边缘的至少一部分上的突出部分。安装构件包括连接到第一和第二电极中的至少一个的连接构件。该方法还包括使用突出部分作为引导件使连接构件接触并连接到第一和第二电极中的至少一个。

8. 发明申请

US20100051994A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US20100051994A1
公开(公告)日：2010-03-04
申请号：US12548939
申请日：2009-08-27
申请人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/05001 , H01L2224/05022 , H01L2224/05139 , H01L2224/05155 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05639 , H01L2224/05644 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode provided on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film provided on the second semiconductor layer; and a second film provided on a rim of the first film on the second semiconductor layer. The first film has a relatively low contact resistance with the second semiconductor layer. The second film has a relatively high contact resistance with the second semiconductor layer. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface.
摘要翻译：一种半导体发光器件，包括：层叠结构单元，包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层; 第一电极，设置在第二半导体层侧的层叠结构单元的第一主表面上，以连接到第一半导体层; 以及设置在层叠结构单元的第一主表面上以连接到第二半导体层的第二电极。第二电极包括：设置在第二半导体层上的第一膜; 以及设置在第二半导体层上的第一膜的边缘上的第二膜。第一膜与第二半导体层具有相对低的接触电阻。第二膜与第二半导体层具有较高的接触电阻。从第二膜的外边缘到第一膜的距离在中心部分比在第一主表面的周边部分处更小。

9. 发明申请

US20090230422A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20090230422A1
公开(公告)日：2009-09-17
申请号：US12401473
申请日：2009-03-10
申请人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/38 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.
摘要翻译：半导体发光元件包括：第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，连接到第一半导体层的第一电极和第二电极，在第二半导体层上。面向第二半导体层的第二电极的一侧由银和银合金中的至少一种构成。第二电极具有在与第二半导体层相对的第二电极的平面中具有发光波长或更小的发光波长的空隙。

10. 发明申请

US20090050916A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US20090050916A1
公开(公告)日：2009-02-26
申请号：US12195718
申请日：2008-08-21
申请人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko
发明人： Hiroshi KATSUNO , Yasuo Ohba , Kei Kaneko
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on the first semiconductor layer, a second electrode including a first metal film provided on the second semiconductor layer and containing at least one of silver and a silver alloy, and a second metal film provided on the first metal film and made of a metal substantially not containing silver, and a dielectric film spaced from the first metal film on the second semiconductor layer. The second metal film covers the first metal film, at least part of the dielectric film, and a surface of the second semiconductor layer exposed between the first metal film and the dielectric film.
摘要翻译：半导体发光器件包括第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，设置在第一半导体层上的第一电极，包括第一金属膜的第二电极设置在第二半导体层上并且包含银和银合金中的至少一种，以及设置在第一金属膜上并由基本上不含银的金属制成的第二金属膜，以及与第一金属膜间隔开的电介质膜第二半导体层。第二金属膜覆盖第一金属膜，介电膜的至少一部分，以及暴露在第一金属膜和电介质膜之间的第二半导体层的表面。

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