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    • 2. 发明申请
    • NANOSCALE WIRE-BASED MEMORY DEVICES
    • 基于纳米电路的存储器件
    • WO2009134291A3
    • 2010-09-10
    • PCT/US2009000337
    • 2009-01-21
    • HARVARD COLLEGELIEBER CHARLES MDONG YAJIELU WEIYU GUIHUAMCALPINE MICHAEL
    • LIEBER CHARLES MDONG YAJIELU WEIYU GUIHUAMCALPINE MICHAEL
    • H01L27/10H01L29/06H01L29/16
    • H01L29/0665B82Y10/00G11C13/0002G11C13/0069G11C2213/77G11C2213/81H01L27/10H01L27/101H01L29/0673H01L29/16H01L29/1602H01L29/1604H01L2924/0002H01L2924/00
    • The present invention generally relates to nanotechnology and sub- microelectronic devices that can be used in circuitry and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device. For example, in one embodiment, the cross point may exhibit a first conductance at a positive voltage, and the cross point may exhibit a second conductance at a negative voltage. Accordingly, by applying suitable voltages to the cross point, data may be stored at the cross point. Other aspects of the present invention are directed to systems and methods for making or using such devices, kits involving such devices, or the like.
    • 本发明一般涉及可用于电路中的纳米技术和亚微电子器件,特别涉及能够对数据进行编码的纳米线和其他纳米结构。 本发明的一个方面涉及一种装置,其包括在交叉点处包括至少两根交叉线的电横排阵列。 在一些情况下,交叉导线中的至少一个是纳米线,并且在某些情况下,交叉导线中的至少一个是纳米线,其包括芯和围绕芯的至少一个壳。 例如,芯可以包括晶体(例如,晶体硅),并且壳可以是至少部分无定形的(例如非晶硅)。 在某些实施例中,交叉点可以表现出固有的电流整流或其他电气行为,并且交叉点可以用作存储器件。 例如,在一个实施例中,交叉点可以在正电压下呈现第一电导,并且交叉点可以在负电压下显示第二电导。 因此,通过向交叉点施加合适的电压,可以在交叉点存储数据。 本发明的其他方面涉及用于制造或使用这种装置的系统和方法,涉及这种装置的套件等。
    • 3. 发明申请
    • NANOSCALE WIRE-BASED MEMORY DEVICES
    • 基于纳米电路的存储器件
    • WO2009134291A2
    • 2009-11-05
    • PCT/US2009/000337
    • 2009-01-21
    • PRESIDENT AND FELLOWS OF HARVARD COLLEGELIEBER, Charles, M.DONG, YajieLU, WeiYU, GuihuaMCALPINE, Michael
    • LIEBER, Charles, M.DONG, YajieLU, WeiYU, GuihuaMCALPINE, Michael
    • H01L27/10H01L29/06
    • H01L29/0665B82Y10/00G11C13/0002G11C13/0069G11C2213/77G11C2213/81H01L27/10H01L27/101H01L29/0673H01L29/16H01L29/1602H01L29/1604H01L2924/0002H01L2924/00
    • The present invention generally relates to nanotechnology and sub- microelectronic devices that can be used in circuitry and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device. For example, in one embodiment, the cross point may exhibit a first conductance at a positive voltage, and the cross point may exhibit a second conductance at a negative voltage. Accordingly, by applying suitable voltages to the cross point, data may be stored at the cross point. Other aspects of the present invention are directed to systems and methods for making or using such devices, kits involving such devices, or the like.
    • 本发明一般涉及可用于电路中的纳米技术和亚微电子器件,特别涉及能够对数据进行编码的纳米线和其他纳米结构。 本发明的一个方面涉及一种装置,其包括在交叉点处包括至少两根交叉线的电横排阵列。 在一些情况下,交叉导线中的至少一个是纳米线,并且在某些情况下,交叉导线中的至少一个是纳米线,其包括芯和围绕芯的至少一个壳。 例如,芯可以包括晶体(例如,晶体硅),并且壳可以是至少部分无定形的(例如非晶硅)。 在某些实施例中,交叉点可以表现出固有的电流整流或其他电气行为,并且交叉点可以用作存储器件。 例如,在一个实施例中,交叉点可以在正电压下呈现第一电导,并且交叉点可以在负电压下显示第二电导。 因此,通过向交叉点施加合适的电压,可以在交叉点存储数据。 本发明的其他方面涉及用于制造或使用这种装置的系统和方法,涉及这种装置的套件等。
    • 4. 发明申请
    • NANOBIOELECTRONICS
    • WO2008027078A2
    • 2008-03-06
    • PCT/US2007006545
    • 2007-03-15
    • HARVARD COLLEGEPATOLSKY FERNANDOTIMKO BRIAN PYU GUIHUALIEBER CHARLES M
    • PATOLSKY FERNANDOTIMKO BRIAN PYU GUIHUALIEBER CHARLES M
    • G01N33/5058B82Y10/00H01L29/0665H01L29/0673H01L29/1606
    • The present invention generally relates to nanobioelectronics and, in some cases, to circuits comprising nanoelectronic elements, such as nanotubes and/or nanowires, and biological components, such as neurons. In one aspect, cells, such as neurons, are positioned in electrical communication with one or more nanoscale wires. The nanoscale wires may be used to stimulate the cells, and/or determine an electrical condition of the cells. More than one nanoscale wire may be positioned in electrical communication with the cell, for example, in distinct regions of the cell. However, the nanoscale wires may be positioned such that they are relatively close together, for example, spaced apart by no more than about 200 nm. The nanoscale wires may be disposed on a substrate, for example, between electrodes, and the cells may be adhered to the substrate, for example, using cell adhesion factors such as polylysine. Also provided in other aspects of the invention are methods for making and using such devices, kits for using the same, and the like.
    • 本发明一般涉及纳米生物电子学,并且在一些情况下涉及包含纳米电子元件(例如纳米管和/或纳米线)和生物组分(例如神经元)的电路。 在一个方面,诸如神经元的细胞被定位成与一个或多个纳米级导线电连通。 纳米级线可用于刺激细胞,和/或确定细胞的电状况。 例如,在电池的不同区域中,可以放置多于一根的纳米级电线与电池电连通。 然而,纳米级线材可以定位成使得它们相对靠近在一起,例如间隔不超过约200nm。 纳米级线可以设置在例如电极之间的基板上,并且例如可以使用细胞粘附因子例如聚赖氨酸将细胞粘附到基板。 在本发明的其他方面也提供了制造和使用这种装置的方法,使用它们的试剂盒等。