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1. 发明申请

WO2009134291A3 NANOSCALE WIRE-BASED MEMORY DEVICES 审中-公开
标题翻译：基于纳米电路的存储器件
公开(公告)号：WO2009134291A3
公开(公告)日：2010-09-10
申请号：PCT/US2009000337
申请日：2009-01-21
申请人： HARVARD COLLEGE , LIEBER CHARLES M , DONG YAJIE , LU WEI , YU GUIHUA , MCALPINE MICHAEL
发明人： LIEBER CHARLES M , DONG YAJIE , LU WEI , YU GUIHUA , MCALPINE MICHAEL
IPC分类号： H01L27/10 , H01L29/06 , H01L29/16
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/0002 , G11C13/0069 , G11C2213/77 , G11C2213/81 , H01L27/10 , H01L27/101 , H01L29/0673 , H01L29/16 , H01L29/1602 , H01L29/1604 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to nanotechnology and sub- microelectronic devices that can be used in circuitry and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device. For example, in one embodiment, the cross point may exhibit a first conductance at a positive voltage, and the cross point may exhibit a second conductance at a negative voltage. Accordingly, by applying suitable voltages to the cross point, data may be stored at the cross point. Other aspects of the present invention are directed to systems and methods for making or using such devices, kits involving such devices, or the like.
摘要翻译：本发明一般涉及可用于电路中的纳米技术和亚微电子器件，特别涉及能够对数据进行编码的纳米线和其他纳米结构。本发明的一个方面涉及一种装置，其包括在交叉点处包括至少两根交叉线的电横排阵列。在一些情况下，交叉导线中的至少一个是纳米线，并且在某些情况下，交叉导线中的至少一个是纳米线，其包括芯和围绕芯的至少一个壳。例如，芯可以包括晶体（例如，晶体硅），并且壳可以是至少部分无定形的（例如非晶硅）。在某些实施例中，交叉点可以表现出固有的电流整流或其他电气行为，并且交叉点可以用作存储器件。例如，在一个实施例中，交叉点可以在正电压下呈现第一电导，并且交叉点可以在负电压下显示第二电导。因此，通过向交叉点施加合适的电压，可以在交叉点存储数据。本发明的其他方面涉及用于制造或使用这种装置的系统和方法，涉及这种装置的套件等。

2. 发明申请

WO2009134291A2 NANOSCALE WIRE-BASED MEMORY DEVICES 审中-公开
标题翻译：基于纳米电路的存储器件
公开(公告)号：WO2009134291A2
公开(公告)日：2009-11-05
申请号：PCT/US2009/000337
申请日：2009-01-21
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , DONG, Yajie , LU, Wei , YU, Guihua , MCALPINE, Michael
发明人： LIEBER, Charles, M. , DONG, Yajie , LU, Wei , YU, Guihua , MCALPINE, Michael
IPC分类号： H01L27/10 , H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/0002 , G11C13/0069 , G11C2213/77 , G11C2213/81 , H01L27/10 , H01L27/101 , H01L29/0673 , H01L29/16 , H01L29/1602 , H01L29/1604 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to nanotechnology and sub- microelectronic devices that can be used in circuitry and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device. For example, in one embodiment, the cross point may exhibit a first conductance at a positive voltage, and the cross point may exhibit a second conductance at a negative voltage. Accordingly, by applying suitable voltages to the cross point, data may be stored at the cross point. Other aspects of the present invention are directed to systems and methods for making or using such devices, kits involving such devices, or the like.
摘要翻译：本发明一般涉及可用于电路中的纳米技术和亚微电子器件，特别涉及能够对数据进行编码的纳米线和其他纳米结构。本发明的一个方面涉及一种装置，其包括在交叉点处包括至少两根交叉线的电横排阵列。在一些情况下，交叉导线中的至少一个是纳米线，并且在某些情况下，交叉导线中的至少一个是纳米线，其包括芯和围绕芯的至少一个壳。例如，芯可以包括晶体（例如，晶体硅），并且壳可以是至少部分无定形的（例如非晶硅）。在某些实施例中，交叉点可以表现出固有的电流整流或其他电气行为，并且交叉点可以用作存储器件。例如，在一个实施例中，交叉点可以在正电压下呈现第一电导，并且交叉点可以在负电压下显示第二电导。因此，通过向交叉点施加合适的电压，可以在交叉点存储数据。本发明的其他方面涉及用于制造或使用这种装置的系统和方法，涉及这种装置的套件等。

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