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1. 发明授权

US08821978B2 Methods of directed self-assembly and layered structures formed therefrom 有权
标题翻译：定向自组装方法和从其形成的分层结构
公开(公告)号：US08821978B2
公开(公告)日：2014-09-02
申请号：US12641959
申请日：2009-12-18
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff , Atsuko Ito
发明人： Joy Cheng , William D. Hinsberg , Hiroshi Ito , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff
IPC分类号： B32B3/10 , G03F7/16 , G03F7/38 , G03F7/40 , G03F7/30
CPC分类号： B82Y40/00 , B81C1/00031 , B81C2201/0149 , G03F7/0392 , G03F7/09 , G03F7/091 , G03F7/165 , G03F7/325 , G03F7/327 , G03F7/40
摘要： A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
摘要翻译：形成包括自组装材料的畴图案的分层结构的方法利用包含非交联显影光致抗蚀剂的负色调图案化光致抗蚀剂层。显影的光致抗蚀剂不溶于用于能够自组装的材料的有机浇铸溶剂中。显影的光致抗蚀剂可溶于含水碱性显影剂和/或第二有机溶剂。将包含能够自组装的材料和有机浇铸溶剂的溶液浇铸在图案化的光致抗蚀剂层上。在去除有机浇注溶剂时，材料自组装，从而形成层状结构。

2. 发明授权

US08623458B2 Methods of directed self-assembly, and layered structures formed therefrom 有权
标题翻译：定向自组装的方法和由其形成的分层结构
公开(公告)号：US08623458B2
公开(公告)日：2014-01-07
申请号：US12642018
申请日：2009-12-18
申请人： Joy Cheng , Matthew E. Colburn , Stefan Harrer , William D. Hinsberg , Steven J. Holmes , Ho-Cheol Kim , Daniel Paul Sanders
发明人： Joy Cheng , Matthew E. Colburn , Stefan Harrer , William D. Hinsberg , Steven J. Holmes , Ho-Cheol Kim , Daniel Paul Sanders
IPC分类号： B81C1/00 , C08J5/18 , C08J5/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A layered structure comprising a self-assembled material is formed by a method that includes forming a photochemically, thermally and/or chemically treated patterned photoresist layer disposed on a first surface of a substrate. The treated patterned photoresist layer comprises a non-crosslinked treated photoresist. An orientation control material is cast on the treated patterned photoresist layer, forming a layer containing orientation control material bound to a second surface of the substrate. The treated photoresist and, optionally, any non-bound orientation control material are removed by a development process, resulting in a pre-pattern for self-assembly. A material capable of self-assembly is cast on the pre-pattern. The casted material is allowed to self-assemble with optional heating and/or annealing to produce the layered structure.
摘要翻译：包括自组装材料的层状结构通过包括形成设置在衬底的第一表面上的光化学，热和/或化学处理的图案化光致抗蚀剂层的方法形成。经处理的图案化光刻胶层包括非交联处理的光致抗蚀剂。将取向控制材料浇铸在经处理的图案化的光致抗蚀剂层上，形成包含与基材的第二表面结合的取向控制材料的层。经处理的光致抗蚀剂和任选的任何未结合的取向控制材料通过显影过程被去除，从而形成用于自组装的预图案。能够自组装的材料在预制图案上铸造。允许铸造材料通过任选的加热和/或退火自组装以产生分层结构。

3. 发明授权

US08614047B2 Photodecomposable bases and photoresist compositions 有权
标题翻译：光可分解碱和光致抗蚀剂组合物
公开(公告)号：US08614047B2
公开(公告)日：2013-12-24
申请号：US13219599
申请日：2011-08-26
申请人： Ramakrishnan Ayothi , William D. Hinsberg , Sally A. Swanson , Gregory M. Wallraff
发明人： Ramakrishnan Ayothi , William D. Hinsberg , Sally A. Swanson , Gregory M. Wallraff
IPC分类号： C07C55/02 , G03F7/004 , G03F7/26
CPC分类号： C07C55/08 , C07C55/12 , C07C55/14 , C07C55/32 , C07C59/21 , C07C59/245 , C07C59/295 , C07C59/315 , C07C59/347 , C07C229/24 , C07D241/04 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： Provided are novel symmetrical and asymmetrical bifunctional photodecomposable bases (PDBs) with dicarboxylate anion groups that show increased imaging performance. Also provided are photoresist compositions prepared with the bifunctional dicarboxylated PDBs and lithography methods that use the photoresist compositions of the present invention.
摘要翻译：提供了具有显示增加的成像性能的具有二羧酸阴离子基团的新颖的对称和不对称双功能可光分解碱（PDB）。还提供了使用双功能二羧酸化PDB制备的光致抗蚀剂组合物和使用本发明的光致抗蚀剂组合物的光刻方法。

4. 发明授权

US08226838B2 Method of forming polymer features by directed self-assembly of block copolymers 有权
标题翻译：通过嵌段共聚物的定向自组装形成聚合物特征的方法
公开(公告)号：US08226838B2
公开(公告)日：2012-07-24
申请号：US12061693
申请日：2008-04-03
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders
发明人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders
IPC分类号： C03C15/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Disclosed are methods of forming polymer structures comprising: applying a solution of a block copolymer assembly comprising at least one block copolymer to a neutral substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and have a first spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains of the block copolymer that form by lateral segregation of the blocks in accordance with the underlying chemical pattern, wherein at least one domain of the block copolymer assembly has an affinity for the pinning regions, wherein a structure extending across the chemical pattern is produced, the structure having a uniform second spatial frequency given by the number of repeating sets of domains along the given direction that is at least twice that of the first spatial frequency.
摘要翻译：公开了形成聚合物结构的方法，包括：将包含至少一种嵌段共聚物的嵌段共聚物组合物溶液施加到其上具有化学图案的中性衬底上，所述化学图案包括化学上不同的交替的钉扎和中性区域，并且具有第一空间频率由衬底上沿着给定方向的成套组钉扎和中性区域的数量给出; 以及通过根据下面的化学图案横向分离块而形成嵌段共聚物的结构域，其中嵌段共聚物组合物的至少一个结构域对于钉扎区域具有亲和力，其中横跨化学图案延伸的结构是所述结构具有由给定方向上的至少是第一空间频率的两倍的畴的重复集合的数量给出的统一的第二空间频率。

5. 发明申请

US20130052585A1 PHOTODECOMPOSABLE BASES AND PHOTORESIST COMPOSITIONS 有权
标题翻译：光电复合基和光电组合物
公开(公告)号：US20130052585A1
公开(公告)日：2013-02-28
申请号：US13219599
申请日：2011-08-26
申请人： Ramakrishnan Ayothi , William D. Hinsberg , Sally A. Swanson , Gregory M. Wallraff
发明人： Ramakrishnan Ayothi , William D. Hinsberg , Sally A. Swanson , Gregory M. Wallraff
IPC分类号： G03F7/20 , G03F7/027 , C07C59/315 , C07C59/21 , C07C55/32 , C07C55/14 , C07C59/295 , C07C59/347 , C07C229/24 , C07C55/08 , C07C55/12 , G03F7/004 , C07D241/04
CPC分类号： C07C55/08 , C07C55/12 , C07C55/14 , C07C55/32 , C07C59/21 , C07C59/245 , C07C59/295 , C07C59/315 , C07C59/347 , C07C229/24 , C07D241/04 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： Provided are novel symmetrical and asymmetrical bifunctional photodecomposable bases (PDBs) with dicarboxylate anion groups that show increased imaging performance. Also provided are photoresist compositions prepared with the bifunctional dicarboxylated PDBs and lithography methods that use the photoresist compositions of the present invention.
摘要翻译：提供了具有显示增加的成像性能的具有二羧酸阴离子基团的新颖的对称和不对称双功能可光分解碱（PDB）。还提供了使用双功能二羧酸化PDB制备的光致抗蚀剂组合物和使用本发明的光致抗蚀剂组合物的光刻方法。

6. 发明申请

US20110037175A1 INTERCONNECTION BETWEEN SUBLITHOGRAPHIC-PITCHED STRUCTURES AND LITHOGRAPHIC-PITCHED STRUCTURES 有权
标题翻译：分层抛光结构与平面抛光结构之间的互连
公开(公告)号：US20110037175A1
公开(公告)日：2011-02-17
申请号：US12540759
申请日：2009-08-13
申请人： Sarunya Bangsaruntip , Daniel C. Edelstein , William D. Hinsberg , Ho-Cheol Kim , Steven Koester , Paul M. Solomon
发明人： Sarunya Bangsaruntip , Daniel C. Edelstein , William D. Hinsberg , Ho-Cheol Kim , Steven Koester , Paul M. Solomon
IPC分类号： H01L23/48 , H05K1/11 , B05D5/12 , G03F7/20
CPC分类号： H01L21/76816 , H01L21/31144 , H01L21/76838 , H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.
摘要翻译：形成了亚光刻间距结构和光刻凸出结构之间的互连。具有亚光刻间距的多条导线可以被光刻图案化并且沿着与多根导线的长度方向成小于45度的角度的切割。或者，与均聚物混合的共聚物可以放置在凹陷区域中并自对准以形成在恒定宽度区域具有亚光刻间距的多条导线，以及在梯形区域处的相邻线之间的光刻尺寸。或者，具有亚光刻间距的第一多个导线和具有光刻间距的第二多个导线可以形成在相同的水平或不同的位置。

7. 发明授权

US07521094B1 Method of forming polymer features by directed self-assembly of block copolymers 有权
标题翻译：通过嵌段共聚物的定向自组装形成聚合物特征的方法
公开(公告)号：US07521094B1
公开(公告)日：2009-04-21
申请号：US12013957
申请日：2008-01-14
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders
发明人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders
IPC分类号： B05D3/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Disclosed herein is a method of forming polymer structures comprising applying a solution of a diblock copolymer assembly comprising at least one diblock copolymer that forms lamellae, to a neutral surface of a substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and which have a chemical pattern spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains comprising blocks of the diblock copolymer. The domains form by lateral segregation of the blocks. At least one domain has an affinity for the pinning regions and forms on the pinning region, the domains so formed on the pinning region are aligned with the underlying chemical pattern, and domains that do not form on the pinning region form adjacent to and are aligned with the domains formed on the pinning regions. In this way, a structure comprising repeating sets of domains is formed on the chemical pattern with a spatial frequency given by the number of repeating sets of domains in the given direction, that is at least twice that of the chemical pattern spatial frequency. Methods of forming the chemical patterns, and pattern transfer methods using patterned domains, are also disclosed.
摘要翻译：本文公开了形成聚合物结构的方法，包括将包含至少一种形成薄片的二嵌段共聚物的二嵌段共聚物组合物的溶液施加到其上具有化学图案的基材的中性表面上，所述化学图案包括交替的钉扎和中性区域其在化学上是不同的，并且具有由沿着衬底上的给定方向的成套组的钉扎和中性区域的数量给出的化学图案空间频率; 以及形成包含二嵌段共聚物嵌段的畴。这些区域由块的横向偏析形成。至少一个结构域对钉扎区域的钉扎区域和形成具有亲和性，因此形成在钉扎区域上的区域与下面的化学图案对准，并且不在钉扎区域上形成的区域形成为邻近并对齐其中所述域形成在钉扎区域上。以这种方式，在化学图案上形成包括重复的畴集合的结构，其空间频率由给定方向上的重复域集合的数量给出，即至少是化学图案空间频率的两倍。还公开了形成化学图案的方法和使用图案域的图案转印方法。

8. 发明授权

US5272042A Positive photoresist system for near-UV to visible imaging 失效
标题翻译：用于近紫外到可见成像的正性光致抗蚀剂系统
公开(公告)号：US5272042A
公开(公告)日：1993-12-21
申请号：US761183
申请日：1991-09-17
申请人： Robert D. Allen , William R. Brunsvold , Burton J. Carpenter , William D. Hinsberg , Joseph LaTorre , Michael G. McMaster , Melvin W. Montgomery , Wayne M. Moreau , Logan L. Simpson , Robert J. Tweig , Gregory M. Wallraff
发明人： Robert D. Allen , William R. Brunsvold , Burton J. Carpenter , William D. Hinsberg , Joseph LaTorre , Michael G. McMaster , Melvin W. Montgomery , Wayne M. Moreau , Logan L. Simpson , Robert J. Tweig , Gregory M. Wallraff
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30 , G03C1/73
CPC分类号： G03F7/039 , Y10S430/111 , Y10S430/121 , Y10S430/122 , Y10S430/126 , Y10S430/127
摘要： Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.
摘要翻译：公开了一种正性光致抗蚀剂。光致抗蚀剂具有基本上水和碱不溶性的光不稳定聚合物作为其聚合物组分。光致抗蚀剂还包括能够形成强酸的光酸产生剂。该光酸产生剂可以是衍生自N-羟基酰胺或N-羟基酰亚胺的磺酸酯。最后，光致抗蚀剂组合物包括适当的光敏剂。

9. 发明授权

US5264325A Composition for photo imaging 失效
标题翻译：摄影成像的组成
公开(公告)号：US5264325A
公开(公告)日：1993-11-23
申请号：US918304
申请日：1992-07-21
申请人： Robert D. Allen , Richard A. Day , Donald H. Glatzel , William D. Hinsberg , John R. Mertz , David J. Russell , Gregory M. Wallraff
发明人： Robert D. Allen , Richard A. Day , Donald H. Glatzel , William D. Hinsberg , John R. Mertz , David J. Russell , Gregory M. Wallraff
IPC分类号： G03F7/038 , G03F7/20 , H05K3/00 , H05K3/28 , D04H1/08
CPC分类号： G03F7/2053 , G03F7/0385 , H05K3/0082 , H05K3/287
摘要： An improved photoimagable cationically polymerizable epoxy based coating material is provided, that is suitable for use on a variety of substrates. The material includes an epoxy resin system consisting essentially of between about 10% and about 80% by weight of a polyol resin which preferably is a condensation product of epichlorohydrin and bisphenol A having a molecular weight of between about 40,000 and 130,000; and between about 35% and 72% by weight of an epoxidized glycidyl ether of a brominated bisphenol A having a softening point of between about 60.degree. C. and about 110.degree. C. and a molecular weight of between about 600 and 2,500. A third resin, either an epoxy cresol novolak or a polyepoxy resin, is also added to the resin system. To this resin system is added about 0.1 to about 15 parts by weight per 100 parts of resin of a cationic photoinitiator capable of initiating polymerization of said epoxidized resin system upon exposure to actinic radiation; the system being further characterized by having an absorbance of light in the 330 to 700 nm region of less than 0.1 for a 2.0 mil thick film. Optionally a photosensitizer such as perylene and its derivatives or anthracene and its derivatives may be added.
摘要翻译：提供了一种改进的可光成像的可阳离子聚合的环氧基涂料，其适用于各种基材。该材料包括基本上由约10重量％至约80重量％的多元醇树脂组成的环氧树脂体系，多元醇树脂优选为分子量为约40,000至130,000的表氯醇和双酚A的缩合产物; 和约35重量％至72重量％的软化点为约60℃至约110℃，分子量为约600至2,500的溴化双酚A的环氧化缩水甘油醚。树脂体系中还加入第三树脂，环氧甲酚酚醛清漆或聚环氧树脂。向该树脂体系中添加约0.1〜约15重量份/ 100份阳离子光引发剂的树脂，其能够在暴露于光化辐射下引发所述环氧化树脂体系的聚合; 该系统的特征还在于，对于2.0密耳厚的膜，在330至700nm区域中的光的吸光度小于0.1。任选地，可加入光敏剂如苝及其衍生物或蒽及其衍生物。

10. 发明授权

US08828493B2 Methods of directed self-assembly and layered structures formed therefrom 有权
标题翻译：定向自组装方法和从其形成的分层结构
公开(公告)号：US08828493B2
公开(公告)日：2014-09-09
申请号：US12641987
申请日：2009-12-18
申请人： Joy Cheng , William D. Hinsberg , Charles Thomas Rettner , Daniel Paul Sanders
发明人： Joy Cheng , William D. Hinsberg , Charles Thomas Rettner , Daniel Paul Sanders
IPC分类号： B32B3/10 , G03F7/16 , G03F7/30 , G03F7/38 , G03F7/40 , G03F7/20 , G03F7/039 , G03F7/09
CPC分类号： G03F7/0392 , G03F7/091 , G03F7/165 , G03F7/2041 , G03F7/40
摘要： Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.
摘要翻译：公开了用于形成包括自组装材料的层状结构的方法。光化学，热学和/或化学处理初始图案化的光致抗蚀剂层以形成包含非交联处理的光致抗蚀剂的经处理的图案化光致抗蚀剂层。经处理的光致抗蚀剂不溶于适于铸造能够自组装的材料的有机溶剂中。将包含溶解在有机溶剂中的能够自组装的材料的溶液浇铸在处理层上，并除去有机溶剂。允许铸造材料通过任选的加热和/或退火自组装，从而形成包括自组装材料的层状结构。可以使用碱性水溶液和/或第二有机溶剂除去经处理的光致抗蚀剂。

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