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    • 5. 发明申请
    • Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
    • 辐射敏感,湿发展底部抗反射涂层组合物及其在半导体制造中的应用
    • US20090098490A1
    • 2009-04-16
    • US11974946
    • 2007-10-16
    • Victor PhamRamakrishnan AyothiMark Slezak
    • Victor PhamRamakrishnan AyothiMark Slezak
    • G03C5/56
    • G03F7/091G03F7/0045G03F7/0046G03F7/0392G03F7/095
    • The present invention is directed to novel radiation-sensitive, wet developable bottom antireflective coating (DBARC) compositions and their use in semiconductor device manufacturing. The DBARC compositions contain a photoacid generator that produces a photoacid upon exposure to activating radiation. In a photolithographic imaging process, the relatively strong photoacid reduces or eliminates scumming. Further, the relatively large size of the photoacid limits its diffusion through the DBARC, thus minimizing or preventing undercut. The inventive method also limits diffusion of the photoacid by controlling the temperature of the post-exposure baking step. Use of the DBARC compositions with a photoresist in photolithography results in highly resolved features having essentially vertical profiles and no scumming and no undercut, which is critical as microelectronics and semiconductor components become increasingly miniaturized.
    • 本发明涉及新型的辐射敏感性,湿显影性底部抗反射涂层(DBARC)组合物及其在半导体器件制造中的应用。 DBARC组合物含有在暴露于活化辐射时产生光致酸的光致酸产生剂。 在光刻成像过程中,相对较强的光致酸降低或消除浮渣。 此外,较大尺寸的光致酸酸限制其通过DBARC的扩散,从而最小化或防止底切。 本发明的方法还通过控制曝光后烘烤步骤的温度来限制光致酸的扩散。 在光刻中使用具有光致抗蚀剂的DBARC组合物导致高度分辨的特征,其具有基本上垂直的轮廓并且没有浮渣和无底切,这在微电子学和半导体组件变得越来越小型化时是至关重要的。