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1. 发明申请

WO2011003117A3 ARRANGEMENT FOR IDENTIFYING UNCONTROLLED EVENTS AT THE PROCESS MODULE LEVEL AND METHODS THEREOF 审中-公开
标题翻译：用于识别过程模块级未受控事件的安排及其方法
公开(公告)号：WO2011003117A3
公开(公告)日：2011-04-28
申请号：PCT/US2010042933
申请日：2010-07-22
申请人： LAM RES CORP , HUANG CHUNG HO , VENUGOPAL VIJAYAKUMAR C , LAM CONNIE , PODLESNIK DRAGAN
发明人： HUANG CHUNG HO , VENUGOPAL VIJAYAKUMAR C , LAM CONNIE , PODLESNIK DRAGAN
IPC分类号： H01L21/00
CPC分类号： G06F9/5027 , G05B19/4184 , G05B2219/31202 , G05B2219/31293 , G05B2219/31318 , G05B2219/31481 , G05B2219/32209 , G05B2219/45031 , G06F11/2035 , G06F11/2043 , Y02P90/14 , Y02P90/18
摘要： A process-level troubleshooting architecture (PLTA) configured to facilitate substrate processing in a plasma processing system is provided. The architecture includes a process module controller. The architecture also includes a plurality of sensors, wherein each sensor of the plurality of sensors communicates with the process module controller to collect sensed data about one or more process parameters. The architecture further includes a process-module-level analysis server, wherein the process-module-level analysis server communicates directly with the plurality of sensors and the process module controller. The process-module-level analysis server is configured for receiving data, wherein the data include at least one of the sensed data from the plurality of sensors and process module and chamber data from the process module controller. The process-module-level analysis server is also configured for analyzing the data and sending interdiction data directly to the process module controller when a problem is identified during the substrate processing.
摘要翻译：提供了配置为促进等离子体处理系统中的衬底处理的处理级故障排除体系结构（PLTA）。该架构包括一个过程模块控制器。该架构还包括多个传感器，其中多个传感器中的每个传感器与处理模块控制器通信以收集关于一个或多个处理参数的感测数据。该体系结构还包括过程模块级分析服务器，其中过程模块级分析服务器直接与多个传感器和过程模块控制器通信。处理模块级分析服务器被配置用于接收数据，其中该数据包括来自多个传感器和处理模块的感测数据和来自处理模块控制器的腔室数据中的至少一个。过程模块级分析服务器还被配置用于在衬底处理期间识别问题时分析数据并将阻断数据直接发送到过程模块控制器。

2. 发明申请

WO2011008376A3 DETERMINING PLASMA PROCESSING SYSTEM READINESS WITHOUT GENERATING PLASMA 审中-公开
标题翻译：在不产生等离子体的情况下确定等离子体处理系统的准备情况
公开(公告)号：WO2011008376A3
公开(公告)日：2011-03-10
申请号：PCT/US2010037936
申请日：2010-06-09
申请人： LAM RES CORP , CHOI BRIAN , YUN GUNSU , VENUGOPAL VIJAYAKUMAR C , WILLIAMS NORMAN
发明人： CHOI BRIAN , YUN GUNSU , VENUGOPAL VIJAYAKUMAR C , WILLIAMS NORMAN
IPC分类号： H01L21/66 , H01L21/00 , H01L21/02
CPC分类号： H01J37/32935
摘要： A test system for facilitating determining whether a plasma processing system (which includes a plasma processing chamber) is ready for processing wafers. The test system may include a computer-readable medium storing at least a test program. The test program may include code for receiving electric parameter values derived from signals detected by at least one sensor when no plasma is present in the plasma processing chamber. The test program may also include code for generating electric model parameter values using the electric parameter values and a mathematical model. The test program may also include code for comparing the electric model parameter values with baseline model parameter value information. The test program may also include code for determining readiness of the plasma processing system based on the comparison. The test system may also include circuit hardware for performing one or more tasks associated with the test program.
摘要翻译：一种便于确定等离子体处理系统（包括等离子体处理室）是否准备好处理晶片的测试系统。测试系统可以包括存储至少一个测试程序的计算机可读介质。测试程序可以包括用于当在等离子体处理室中不存在等离子体时接收由至少一个传感器检测到的信号导出的电参数值的代码。测试程序还可以包括用于使用电参数值和数学模型来生成电模型参数值的代码。测试程序还可以包括用于将电模型参数值与基线模型参数值信息进行比较的代码。测试程序还可以包括用于基于比较确定等离子体处理系统的准备状态的代码。测试系统还可以包括用于执行与测试程序相关联的一个或多个任务的电路硬件。

3. 发明申请

WO2011002811A3 ARRANGEMENT FOR IDENTIFYING UNCONTROLLED EVENTS AT THE PROCESS MODULE LEVEL AND METHODS THEREOF 审中-公开
公开(公告)号：WO2011002811A3
公开(公告)日：2011-01-06
申请号：PCT/US2010/040478
申请日：2010-06-29
申请人： LAM RESEARCH CORPORATION , ALBAREDE, Luc , VENUGOPAL, Vijayakumar C.
发明人： ALBAREDE, Luc , VENUGOPAL, Vijayakumar C.
IPC分类号： H01L21/00 , H01L21/02
摘要： A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.

4. 发明申请

WO2011002810A2 METHODS FOR CONSTRUCTING AN OPTIMAL ENDPOINT ALGORITHM 审中-公开
公开(公告)号：WO2011002810A2
公开(公告)日：2011-01-06
申请号：PCT/US2010040477
申请日：2010-06-29
申请人： LAM RES CORP , WANG JIANGXIN , PERRY ANDREW JAMES , VENUGOPAL VIJAYAKUMAR C
发明人： WANG JIANGXIN , PERRY ANDREW JAMES , VENUGOPAL VIJAYAKUMAR C
IPC分类号： H01L21/66 , H01L21/00 , H01L21/3065
CPC分类号： H01J37/3299 , H01J37/32935
摘要： A method for automatically identifying an optimal endpoint algorithm for qualifying a process endpoint during substrate processing within a plasma processing system is provided. The method includes receiving sensor data from a plurality of sensors during substrate processing of at least one substrate within the plasma processing system, wherein the sensor data includes a plurality of signal streams from a plurality of sensor channels. The method also includes identifying an endpoint domain, wherein the endpoint domain is an approximate period within which the process endpoint is expected to occur. The method further includes analyzing the sensor data to generate a set of potential endpoint signatures. The method yet also includes converting the set of potential endpoint signatures into a set of optimal endpoint algorithms. The method yet further includes importing one optimal endpoint algorithm of the set of optimal endpoint algorithms into production environment.

5. 发明申请

WO2011002800A2 METHODS AND ARRANGEMENTS FOR IN-SITU PROCESS MONITORING AND CONTROL FOR PLASMA PROCESSING TOOLS 审中-公开
标题翻译：用于等离子体处理工具的原位过程监测和控制的方法和装置
公开(公告)号：WO2011002800A2
公开(公告)日：2011-01-06
申请号：PCT/US2010/040456
申请日：2010-06-29
申请人： LAM RESEARCH CORPORATION , VENUGOPAL, Vijayakumar C. , BENJAMIN, Neil Martin Paul
发明人： VENUGOPAL, Vijayakumar C. , BENJAMIN, Neil Martin Paul
IPC分类号： H01L21/3065 , H01L21/00
CPC分类号： H01J37/3299 , H01J37/32935
摘要： An arrangement for implementing an automatic in-situ process control scheme during execution of a recipe is provided. The arrangement includes control-loop sensors configured at least for collecting a first set of sensor data to facilitate monitoring set points during the recipe execution, wherein the control-loop sensors being part of a process control loop. The arrangement also includes independent sensors configured at least for collecting a second set of sensor data, which is not part of the process control loop. The arrangement yet also includes a hub configured for at least receiving at least one of the first set of sensor data and the second set of sensor data. The arrangement yet further includes an analysis computer communicably coupled with the hub and configured for performing analysis of at least one of the first set of sensor data and the second set of sensor data.
摘要翻译：提供了在执行配方期间实现自动现场过程控制方案的配置。该装置包括控制回路传感器，该传感器被配置为至少用于收集第一组传感器数据以便于在配方执行期间监测设定点，其中，控制回路传感器是过程控制回路的一部分。该装置还包括独立的传感器，其被配置为至少用于收集第二组传感器数据，其不是过程控制回路的一部分。该装置还包括配置用于至少接收第一组传感器数据和第二组传感器数据中的至少一个的集线器。该装置还包括分析计算机，该分析计算机与集线器可通信地耦合并被配置为执行对第一组传感器数据和第二组传感器数据中的至少一个的分析。

6. 发明申请

WO2004015727A3 METHOD FOR CONTROLLING A RECESS ETCH PROCESS 审中-公开
标题翻译：控制回蚀处理的方法
公开(公告)号：WO2004015727A3
公开(公告)日：2004-04-29
申请号：PCT/US0325156
申请日：2003-08-12
申请人： LAM RES CORP , VENUGOPAL VIJAYAKUMAR C , PERRY ANDREW J
发明人： VENUGOPAL VIJAYAKUMAR C , PERRY ANDREW J
IPC分类号： G01B11/02 , G01B11/06 , G01N21/00 , G01N21/27 , G01N21/45 , H01L21/027 , H01L21/3065 , H01L21/334 , H01L21/8242 , H01L27/108 , H01L21/66
CPC分类号： G01B11/0683 , G01B11/0616 , G01B11/0625 , H01L27/1087 , H01L29/66181
摘要： A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.
摘要翻译：控制其中具有沟槽和沉积在沟槽中的材料柱的多层基板的凹槽蚀刻工艺的方法包括：通过获得所测量的基板的反射率来确定从基板的表面到基板中的参考点的第一尺寸包括沟槽的衬底的至少一部分，计算衬底的该部分的模型化的净反射率作为来自构成衬底的该部分的n1个不同区域的反射率的加权非相干和，确定提供紧密匹配的一组参数在所测量的净反射率和所建模的净反射率之间，并且从该组参数中提取第一维度; 根据所述第一尺寸和从所述参考点测量的期望的凹陷深度来计算所述过程的端点; 并从材料柱的表面向下蚀刻直至达到终点。

7. 发明申请

WO2004015727A2 METHOD FOR CONTROLLING A RECESS ETCH PROCESS 审中-公开
标题翻译：控制记忆蚀刻过程的方法
公开(公告)号：WO2004015727A2
公开(公告)日：2004-02-19
申请号：PCT/US2003/025156
申请日：2003-08-12
申请人： LAM RESEARCH CORPORATION , VENUGOPAL, Vijayakumar, C. , PERRY, Andrew, J.
发明人： VENUGOPAL, Vijayakumar, C. , PERRY, Andrew, J.
IPC分类号： H01G
CPC分类号： G01B11/0683 , G01B11/0616 , G01B11/0625 , H01L27/1087 , H01L29/66181
摘要： A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.
摘要翻译：控制其中具有沟槽的多层衬底的凹陷蚀刻工艺和沉积在沟槽中的材料柱的方法包括通过获得测量的净反射率来确定从衬底的表面到衬底中的参考点的第一维度衬底的至少一部分包括沟槽，计算衬底部分的建模净反射率作为来自构成衬底部分的n1个不同区域的反射率的加权非相干总和，确定提供紧密匹配的一组参数在测量的净反射率和建模的净反射率之间，并从该组参数中提取第一维度; 计算作为第一尺寸的函数的过程的端点和从参考点测量的期望的凹陷深度; 并且从材料柱的表面向下蚀刻直到达到端点。

8. 发明申请

WO2011008376A2 DETERMINING PLASMA PROCESSING SYSTEM READINESS WITHOUT GENERATING PLASMA 审中-公开
标题翻译：确定等离子体处理系统无需生成等离子体
公开(公告)号：WO2011008376A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/037936
申请日：2010-06-09
申请人： LAM RESEARCH CORPORATION , CHOI, Brian , YUN, Gunsu , VENUGOPAL, Vijayakumar C. , WILLIAMS, Norman
发明人： CHOI, Brian , YUN, Gunsu , VENUGOPAL, Vijayakumar C. , WILLIAMS, Norman
IPC分类号： H01L21/66 , H01L21/02 , H01L21/00
CPC分类号： H01J37/32935
摘要： A test system for facilitating determining whether a plasma processing system (which includes a plasma processing chamber) is ready for processing wafers. The test system may include a computer-readable medium storing at least a test program. The test program may include code for receiving electric parameter values derived from signals detected by at least one sensor when no plasma is present in the plasma processing chamber. The test program may also include code for generating electric model parameter values using the electric parameter values and a mathematical model. The test program may also include code for comparing the electric model parameter values with baseline model parameter value information. The test program may also include code for determining readiness of the plasma processing system based on the comparison. The test system may also include circuit hardware for performing one or more tasks associated with the test program.
摘要翻译：用于有助于确定等离子体处理系统（其包括等离子体处理室）是否准备好用于处理晶片的测试系统。测试系统可以包括至少存储测试程序的计算机可读介质。测试程序可以包括用于接收由等离子体处理室中没有等离子体时由至少一个传感器检测的信号导出的电参数值的代码。测试程序还可以包括使用电参数值和数学模型产生电模型参数值的代码。测试程序还可以包括用于将电模型参数值与基准模型参数值信息进行比较的代码。测试程序还可以包括用于基于比较来确定等离子体处理系统的准备状态的代码。测试系统还可以包括用于执行与测试程序相关联的一个或多个任务的电路硬件。

9. 发明申请

WO2011002804A2 METHODS AND APPARATUS TO PREDICT ETCH RATE UNIFORMITY FOR QUALIFICATION OF A PLASMA CHAMBER 审中-公开
标题翻译：预测等离子体室质量的方法和装置预测
公开(公告)号：WO2011002804A2
公开(公告)日：2011-01-06
申请号：PCT/US2010/040468
申请日：2010-06-29
申请人： LAM RESEARCH CORPORATION , CHOI, Brian D. , YUN, Gunsu , VENUGOPAL, Vijayakumar C.
发明人： CHOI, Brian D. , YUN, Gunsu , VENUGOPAL, Vijayakumar C.
IPC分类号： H05H1/24 , G06F17/40
CPC分类号： H01J37/3299 , H01J37/32935
摘要： A method for predicting etch rate uniformity for qualifying health status of a processing chamber during substrate processing of substrates is provided. The method includes executing a recipe and receiving processing data from a first set of sensors. The method further includes analyzing the processing data utilizing a subsystem health check predictive model to determine calculated data, which includes at least one of etch rate data and uniformity data. The subsystem health check predictive model is constructed by correlating measurement data from a set of film substrates with processing data collected during analogous processing of a set of non-film substrates. The method yet also includes performing a comparison of the calculated data against a set of control limits as defined by the subsystem health check predictive model. The method yet further includes generating a warning if the calculated data is outside of the set of control limits.
摘要翻译：提供了一种用于在衬底的衬底处理期间预测用于限定处理室的健康状况的蚀刻速率均匀性的方法。该方法包括执行食谱并从第一组传感器接收处理数据。该方法还包括利用子系统健康检查预测模型来分析处理数据，以确定计算出的数据，其包括蚀刻速率数据和均匀性数据中的至少一个。通过将来自一组膜基底的测量数据与在一组非膜基底的类似处理期间收集的处理数据相关联来构建子系统健康检查预测模型。该方法还包括执行计算数据与由子系统健康检查预测模型定义的一组控制限制的比较。所述方法还包括如果所计算的数据在所述一组控制限度之外，则产生警告。

10. 发明申请

WO2011002798A3 AUTOMATIC FAULT DETECTION AND CLASSIFICATION IN A PLASMA PROCESSING SYSTEM AND METHODS THEREOF 审中-公开
公开(公告)号：WO2011002798A3
公开(公告)日：2011-01-06
申请号：PCT/US2010/040452
申请日：2010-06-29
申请人： LAM RESEARCH CORPORATION , YUN, Gunsu , VENUGOPAL, Vijayakumar C.
发明人： YUN, Gunsu , VENUGOPAL, Vijayakumar C.
IPC分类号： H01L21/66 , H01L21/3065 , H01L21/205 , H01L21/02
摘要： A method for automatically detecting fault conditions and classifying the fault conditions during substrate processing is provided. The method includes collecting processing data by a set of sensors during the substrate processing. The method also includes sending the processing data to a fault detection/classification component. The method further includes performing data manipulation of the processing data by the fault detection/classification component. The method yet also includes executing a comparison between the processing data and a plurality of fault models stored within a fault library. Each fault model of the plurality of fault models represents a set of data characterizing a specific fault condition. Each fault model includes at least a fault signature, a fault boundary, and a set of principal component analysis (PCA) parameters.

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