专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011008376A3 DETERMINING PLASMA PROCESSING SYSTEM READINESS WITHOUT GENERATING PLASMA 审中-公开
标题翻译：在不产生等离子体的情况下确定等离子体处理系统的准备情况
公开(公告)号：WO2011008376A3
公开(公告)日：2011-03-10
申请号：PCT/US2010037936
申请日：2010-06-09
申请人： LAM RES CORP , CHOI BRIAN , YUN GUNSU , VENUGOPAL VIJAYAKUMAR C , WILLIAMS NORMAN
发明人： CHOI BRIAN , YUN GUNSU , VENUGOPAL VIJAYAKUMAR C , WILLIAMS NORMAN
IPC分类号： H01L21/66 , H01L21/00 , H01L21/02
CPC分类号： H01J37/32935
摘要： A test system for facilitating determining whether a plasma processing system (which includes a plasma processing chamber) is ready for processing wafers. The test system may include a computer-readable medium storing at least a test program. The test program may include code for receiving electric parameter values derived from signals detected by at least one sensor when no plasma is present in the plasma processing chamber. The test program may also include code for generating electric model parameter values using the electric parameter values and a mathematical model. The test program may also include code for comparing the electric model parameter values with baseline model parameter value information. The test program may also include code for determining readiness of the plasma processing system based on the comparison. The test system may also include circuit hardware for performing one or more tasks associated with the test program.
摘要翻译：一种便于确定等离子体处理系统（包括等离子体处理室）是否准备好处理晶片的测试系统。测试系统可以包括存储至少一个测试程序的计算机可读介质。测试程序可以包括用于当在等离子体处理室中不存在等离子体时接收由至少一个传感器检测到的信号导出的电参数值的代码。测试程序还可以包括用于使用电参数值和数学模型来生成电模型参数值的代码。测试程序还可以包括用于将电模型参数值与基线模型参数值信息进行比较的代码。测试程序还可以包括用于基于比较确定等离子体处理系统的准备状态的代码。测试系统还可以包括用于执行与测试程序相关联的一个或多个任务的电路硬件。

2. 发明申请

WO2011002804A3 METHODS AND APPARATUS TO PREDICT ETCH RATE UNIFORMITY FOR QUALIFICATION OF A PLASMA CHAMBER 审中-公开
标题翻译：用于预测等离子体室质量的蚀刻速率均匀性的方法和装置
公开(公告)号：WO2011002804A3
公开(公告)日：2011-03-03
申请号：PCT/US2010040468
申请日：2010-06-29
申请人： LAM RES CORP , CHOI BRIAN D , YUN GUNSU , VENUGOPAL VIJAYAKUMAR C
发明人： CHOI BRIAN D , YUN GUNSU , VENUGOPAL VIJAYAKUMAR C
IPC分类号： H05H1/24 , G06F17/40
CPC分类号： H01J37/3299 , H01J37/32935
摘要： A method for predicting etch rate uniformity for qualifying health status of a processing chamber during substrate processing of substrates is provided. The method includes executing a recipe and receiving processing data from a first set of sensors. The method further includes analyzing the processing data utilizing a subsystem health check predictive model to determine calculated data, which includes at least one of etch rate data and uniformity data. The subsystem health check predictive model is constructed by correlating measurement data from a set of film substrates with processing data collected during analogous processing of a set of non-film substrates. The method yet also includes performing a comparison of the calculated data against a set of control limits as defined by the subsystem health check predictive model. The method yet further includes generating a warning if the calculated data is outside of the set of control limits.
摘要翻译：提供了一种用于在衬底处理衬底期间预测处理室的合格健康状态的蚀刻速率均匀性的方法。该方法包括执行配方并从第一组传感器接收处理数据。该方法进一步包括利用子系统健康检查预测模型分析处理数据以确定计算数据，其包括蚀刻速率数据和均匀性数据中的至少一个。子系统健康检查预测模型通过将来自一组膜基底的测量数据与在一组非膜基底的类似处理期间收集的处理数据相关联来构建。该方法还包括将计算的数据与由子系统健康检查预测模型定义的一组控制限制进行比较。该方法还包括如果所计算的数据在该组控制极限之外则产生警告。

3. 发明申请

WO2011002798A2 AUTOMATIC FAULT DETECTION AND CLASSIFICATION IN A PLASMA PROCESSING SYSTEM AND METHODS THEREOF 审中-公开
标题翻译：等离子体处理系统中的自动故障检测和分类及其方法
公开(公告)号：WO2011002798A2
公开(公告)日：2011-01-06
申请号：PCT/US2010040452
申请日：2010-06-29
申请人： LAM RES CORP , YUN GUNSU , VENUGOPAL VIJAYAKUMAR C
发明人： YUN GUNSU , VENUGOPAL VIJAYAKUMAR C
IPC分类号： H01L21/66 , H01L21/02 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/3299 , G06F17/00 , H01J37/32935
摘要： A method for automatically detecting fault conditions and classifying the fault conditions during substrate processing is provided. The method includes collecting processing data by a set of sensors during the substrate processing. The method also includes sending the processing data to a fault detection/classification component. The method further includes performing data manipulation of the processing data by the fault detection/classification component. The method yet also includes executing a comparison between the processing data and a plurality of fault models stored within a fault library. Each fault model of the plurality of fault models represents a set of data characterizing a specific fault condition. Each fault model includes at least a fault signature, a fault boundary, and a set of principal component analysis (PCA) parameters.
摘要翻译：提供了一种自动检测故障条件并对基板处理过程中的故障状况进行分类的方法。该方法包括在衬底处理期间通过一组传感器收集处理数据。该方法还包括将处理数据发送到故障检测/分类组件。该方法还包括通过故障检测/分类部件执行处理数据的数据操作。该方法还包括执行处理数据与存储在故障库内的多个故障模型之间的比较。多个故障模型的每个故障模型表示表征特定故障状况的一组数据。每个故障模型至少包括故障签名，故障边界和一组主成分分析（PCA）参数。

4. 发明申请

WO2011002803A3 METHODS AND APPARATUS FOR PREDICTIVE PREVENTIVE MAINTENANCE OF PROCESSING CHAMBERS 审中-公开
标题翻译：预处理炉预防性维护方法与装置
公开(公告)号：WO2011002803A3
公开(公告)日：2011-03-03
申请号：PCT/US2010040465
申请日：2010-06-29
申请人： LAM RES CORP , ALBAREDE LUC , PAPE ERIC , VENUGOPAL VIJAYAKUMAR C , CHOI BRIAN D
发明人： ALBAREDE LUC , PAPE ERIC , VENUGOPAL VIJAYAKUMAR C , CHOI BRIAN D
IPC分类号： H05H1/24 , G06F17/40
CPC分类号： H01J37/3299 , H01J37/32935
摘要： A method for assessing health status of a processing chamber is provided. The method includes executing a recipe. The method also includes receiving processing data from a set of sensors during execution of the recipe. The method further includes analyzing the processing data utilizing a set of multi-variate predictive models. The method yet also includes generating a set of component wear data values. The method yet further includes comparing the set of component wear data values against a set of useful life threshold ranges. The method moreover includes generating a warning if the set of component wear data values is outside of the set of useful life threshold ranges.
摘要翻译：提供了一种用于评估处理室的健康状况的方法。该方法包括执行食谱。该方法还包括在执行配方期间从一组传感器接收处理数据。该方法还包括利用一组多变量预测模型分析处理数据。该方法还包括生成一组组件磨损数据值。该方法还包括将组件磨损数据值集合与一组使用寿命阈值范围进行比较。该方法还包括如果组件磨损数据值的集合超出了使用寿命阈值范围的集合，则产生警告。

5. 发明申请

WO2011017716A2 SEASONING PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：季节等离子处理系统
公开(公告)号：WO2011017716A2
公开(公告)日：2011-02-10
申请号：PCT/US2010046757
申请日：2010-08-26
申请人： LAM RES CORP , CHOI BRIAN , VENUGOPAL VIJAYAKUMAR C
发明人： CHOI BRIAN , VENUGOPAL VIJAYAKUMAR C
IPC分类号： H01L21/00 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32935 , H01J37/32862
摘要： A system for facilitating seasoning a plasma processing chamber. The system includes a computer-readable medium storing a chamber seasoning program (or CS program). The CS program includes code for receiving a first plurality of values and a second plurality of values of a set of parameters related to operation of the plasma processing chamber. The CS program includes code for ascertaining, using the first plurality of values and the second plurality of values, whether current values of the parameters have stabilized. The CS program also includes code for determining, using the second plurality of values but not the first plurality of values, whether the current values of parameters have stabilized within a predetermined range. The system may also include circuit hardware for performing one or more tasks associated with the CS program.
摘要翻译：一种用于促进等离子体处理室的调味的系统。该系统包括存储室调味程序（或CS程序）的计算机可读介质。 CS程序包括用于接收与等离子体处理室的操作相关的一组参数的第一多个值和第二多个值的代码。 CS程序包括用于确定使用第一多个值和第二多个值来确定参数的当前值是否已经稳定的代码。 CS程序还包括用于使用第二多个值而不是第一多个值来确定参数的当前值是否已经稳定在预定范围内的代码。该系统还可以包括用于执行与CS程序相关联的一个或多个任务的电路硬件。

6. 发明申请

WO2009005993A2 METHOD AND APPARATUS FOR A HIGHLY COLLIMATED LIGHT COLLECTION ARRANGEMENT 审中-公开
标题翻译：用于高收缩光收集装置的方法和装置
公开(公告)号：WO2009005993A2
公开(公告)日：2009-01-08
申请号：PCT/US2008066706
申请日：2008-06-12
申请人： LAM RES CORP , VENUGOPAL VIJAYAKUMAR C , PAPE ERIC A
发明人： VENUGOPAL VIJAYAKUMAR C , PAPE ERIC A
IPC分类号： H01L21/3065
CPC分类号： H05H1/0025 , G02B27/30
摘要： A method for optical interrogation of plasma during plasma processing in a plasma processing chamber is provided. The method includes providing an optical viewport. The method also includes providing a collimator arrangement. The collimator arrangement is configured with a plurality of collimators, wherein a first collimator of the plurality of collimators is separated by a connecting region from a second collimator in the plurality of collimators. The method further includes collecting optical signals, through the collimator arrangement, from the plasma within the plasma processing chamber while a substrate is being processed, resulting in highly collimated optical signals.
摘要翻译：提供了一种在等离子体处理室中的等离子体处理期间对等离子体进行光询问的方法。该方法包括提供光学视口。该方法还包括提供准直器装置。准直器装置配置有多个准直器，其中多个准直器中的第一准直仪由多个准直器中的第二准直器的连接区域分开。该方法还包括在正在处理衬底的同时通过准直器装置从等离子体处理室内的等离子体收集光信号，导致高度准直的光信号。

7. 发明申请

WO2011002811A2 ARRANGEMENT FOR IDENTIFYING UNCONTROLLED EVENTS AT THE PROCESS MODULE LEVEL AND METHODS THEREOF 审中-公开
标题翻译：在过程模块级别识别非受控事件的安排及其方法
公开(公告)号：WO2011002811A2
公开(公告)日：2011-01-06
申请号：PCT/US2010040478
申请日：2010-06-29
申请人： LAM RES CORP , ALBAREDE LUC , VENUGOPAL VIJAYAKUMAR C
发明人： ALBAREDE LUC , VENUGOPAL VIJAYAKUMAR C
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01J37/3299 , H01J37/32935
摘要： A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.
摘要翻译：提供了一种用于在衬底处理期间检测处理室内的原位快速瞬变事件的方法。该方法包括将数据集与一组标准（原位快速瞬变事件）进行比较的一组传感器，以确定第一数据集是否包括潜在的原位快速瞬变事件。如果第一数据集包括潜在的原位快速瞬变事件，则该方法还包括保存在潜在的原位快速瞬变事件发生的时间段内发生的电特征。该方法还包括将电特征与一组存储的电弧特征进行比较。如果确定匹配，则该方法还包括将电特征分类为第一原位快速瞬时事件，并且基于预定义的一组阈值范围来确定第一原位快速瞬变事件的严重性级别。

8. 发明申请

WO2011003117A3 ARRANGEMENT FOR IDENTIFYING UNCONTROLLED EVENTS AT THE PROCESS MODULE LEVEL AND METHODS THEREOF 审中-公开
标题翻译：用于识别过程模块级未受控事件的安排及其方法
公开(公告)号：WO2011003117A3
公开(公告)日：2011-04-28
申请号：PCT/US2010042933
申请日：2010-07-22
申请人： LAM RES CORP , HUANG CHUNG HO , VENUGOPAL VIJAYAKUMAR C , LAM CONNIE , PODLESNIK DRAGAN
发明人： HUANG CHUNG HO , VENUGOPAL VIJAYAKUMAR C , LAM CONNIE , PODLESNIK DRAGAN
IPC分类号： H01L21/00
CPC分类号： G06F9/5027 , G05B19/4184 , G05B2219/31202 , G05B2219/31293 , G05B2219/31318 , G05B2219/31481 , G05B2219/32209 , G05B2219/45031 , G06F11/2035 , G06F11/2043 , Y02P90/14 , Y02P90/18
摘要： A process-level troubleshooting architecture (PLTA) configured to facilitate substrate processing in a plasma processing system is provided. The architecture includes a process module controller. The architecture also includes a plurality of sensors, wherein each sensor of the plurality of sensors communicates with the process module controller to collect sensed data about one or more process parameters. The architecture further includes a process-module-level analysis server, wherein the process-module-level analysis server communicates directly with the plurality of sensors and the process module controller. The process-module-level analysis server is configured for receiving data, wherein the data include at least one of the sensed data from the plurality of sensors and process module and chamber data from the process module controller. The process-module-level analysis server is also configured for analyzing the data and sending interdiction data directly to the process module controller when a problem is identified during the substrate processing.
摘要翻译：提供了配置为促进等离子体处理系统中的衬底处理的处理级故障排除体系结构（PLTA）。该架构包括一个过程模块控制器。该架构还包括多个传感器，其中多个传感器中的每个传感器与处理模块控制器通信以收集关于一个或多个处理参数的感测数据。该体系结构还包括过程模块级分析服务器，其中过程模块级分析服务器直接与多个传感器和过程模块控制器通信。处理模块级分析服务器被配置用于接收数据，其中该数据包括来自多个传感器和处理模块的感测数据和来自处理模块控制器的腔室数据中的至少一个。过程模块级分析服务器还被配置用于在衬底处理期间识别问题时分析数据并将阻断数据直接发送到过程模块控制器。

9. 发明申请

WO2011002810A2 METHODS FOR CONSTRUCTING AN OPTIMAL ENDPOINT ALGORITHM 审中-公开
公开(公告)号：WO2011002810A2
公开(公告)日：2011-01-06
申请号：PCT/US2010040477
申请日：2010-06-29
申请人： LAM RES CORP , WANG JIANGXIN , PERRY ANDREW JAMES , VENUGOPAL VIJAYAKUMAR C
发明人： WANG JIANGXIN , PERRY ANDREW JAMES , VENUGOPAL VIJAYAKUMAR C
IPC分类号： H01L21/66 , H01L21/00 , H01L21/3065
CPC分类号： H01J37/3299 , H01J37/32935
摘要： A method for automatically identifying an optimal endpoint algorithm for qualifying a process endpoint during substrate processing within a plasma processing system is provided. The method includes receiving sensor data from a plurality of sensors during substrate processing of at least one substrate within the plasma processing system, wherein the sensor data includes a plurality of signal streams from a plurality of sensor channels. The method also includes identifying an endpoint domain, wherein the endpoint domain is an approximate period within which the process endpoint is expected to occur. The method further includes analyzing the sensor data to generate a set of potential endpoint signatures. The method yet also includes converting the set of potential endpoint signatures into a set of optimal endpoint algorithms. The method yet further includes importing one optimal endpoint algorithm of the set of optimal endpoint algorithms into production environment.

10. 发明申请

WO2004015727A3 METHOD FOR CONTROLLING A RECESS ETCH PROCESS 审中-公开
标题翻译：控制回蚀处理的方法
公开(公告)号：WO2004015727A3
公开(公告)日：2004-04-29
申请号：PCT/US0325156
申请日：2003-08-12
申请人： LAM RES CORP , VENUGOPAL VIJAYAKUMAR C , PERRY ANDREW J
发明人： VENUGOPAL VIJAYAKUMAR C , PERRY ANDREW J
IPC分类号： G01B11/02 , G01B11/06 , G01N21/00 , G01N21/27 , G01N21/45 , H01L21/027 , H01L21/3065 , H01L21/334 , H01L21/8242 , H01L27/108 , H01L21/66
CPC分类号： G01B11/0683 , G01B11/0616 , G01B11/0625 , H01L27/1087 , H01L29/66181
摘要： A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.
摘要翻译：控制其中具有沟槽和沉积在沟槽中的材料柱的多层基板的凹槽蚀刻工艺的方法包括：通过获得所测量的基板的反射率来确定从基板的表面到基板中的参考点的第一尺寸包括沟槽的衬底的至少一部分，计算衬底的该部分的模型化的净反射率作为来自构成衬底的该部分的n1个不同区域的反射率的加权非相干和，确定提供紧密匹配的一组参数在所测量的净反射率和所建模的净反射率之间，并且从该组参数中提取第一维度; 根据所述第一尺寸和从所述参考点测量的期望的凹陷深度来计算所述过程的端点; 并从材料柱的表面向下蚀刻直至达到终点。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式