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1. 发明授权

EP2657957B1 VAPORIZER 有权
公开(公告)号：EP2657957B1
公开(公告)日：2020-03-11
申请号：EP11849995.3
申请日：2011-12-21
申请人： Kabushiki Kaisha Watanabe Shoko , Kusuhara, Masaki , Umeda, Masaru , Toda, Masayuki
发明人： KUSUHARA, Masaki , UMEDA, Masaru , TODA Masayuki , FUKAGAWA, Mitsuru
IPC分类号： C23C16/448 , C23C16/455 , B01D1/00

2. 发明公开

EP2657957A1 VAPORIZER 有权
标题翻译： VERDAMPFER
公开(公告)号：EP2657957A1
公开(公告)日：2013-10-30
申请号：EP11849995.3
申请日：2011-12-21
申请人： Kabushiki Kaisha Watanabe Shoko , Kusuhara, Masaki , Umeda, Masaru , Toda, Masayuki
发明人： KUSUHARA, Masaki , UMEDA, Masaru , TODA Masayuki , FUKAGAWA, Mitsuru
IPC分类号： H01L21/31 , C23C16/448
CPC分类号： C23C16/4481 , B01D1/00
摘要： Provided is a vaporizer that can reduce ripples, particles, and a carbon content of a film and can supply a raw material capable of forming a film having a desired composition. Moreover, a vaporizer is obtained that sufficient vaporization can be performed without heating more than necessary and temperature management can be facilitated. A vaporizer includes a vaporizer main body (3) into which a carrier gas having a film forming liquid material dispersed is introduced and a heater main body (4) disposed in the vaporizer main body (3). The shape of the inlet portion of the heater main body is in a cone.
摘要翻译：提供一种蒸发器，其可以减少膜的波纹，颗粒和碳含量，并且可以提供能够形成具有期望组成的膜的原料。此外，获得能够在不需要加热的情况下进行充分蒸发的蒸发器，并且可以促进温度管理。蒸发器包括引入分散有成膜液体材料的载气的蒸发器主体（3）和设置在蒸发器主体（3）中的加热器主体（4）。加热器主体的入口部分的形状为锥形。

3. 发明公开

EP2657957A4 VAPORIZER 有权
标题翻译：式蒸发器
公开(公告)号：EP2657957A4
公开(公告)日：2014-05-28
申请号：EP11849995
申请日：2011-12-21
申请人： WATANABE M & CO LTD , KUSUHARA MASAKI , UMEDA MASARU , TODA MASAYUKI
发明人： KUSUHARA MASAKI , UMEDA MASARU , TODA MASAYUKI , FUKAGAWA MITSURU
IPC分类号： C23C16/448 , B01D1/00 , C23C16/455
CPC分类号： C23C16/4481 , B01D1/00
摘要： Provided is a vaporizer that can reduce ripples, particles, and a carbon content of a film and can supply a raw material capable of forming a film having a desired composition. Moreover, a vaporizer is obtained that sufficient vaporization can be performed without heating more than necessary and temperature management can be facilitated. A vaporizer includes a vaporizer main body (3) into which a carrier gas having a film forming liquid material dispersed is introduced and a heater main body (4) disposed in the vaporizer main body (3). The shape of the inlet portion of the heater main body is in a cone.

4. 发明申请

WO1993013548A1 WAFER SUSCEPTOR 审中-公开
公开(公告)号：WO1993013548A1
公开(公告)日：1993-07-08
申请号：PCT/JP1988000067
申请日：1988-01-28
申请人： OHMI, Tadahiro , UMEDA, Masaru
IPC分类号： H01L21/205
CPC分类号： H01L21/68757 , H01L21/67103 , H01L21/68771 , Y10S148/006 , Y10T29/413
摘要： The present invention relates to a wafer susceptor for supporting and heating semiconductor wafers that is provided in a reaction chamber of an apparatus for fabricating semiconductors. The wafer susceptor comprises a heat-generating support member for supporting and heating the wafer, and a fine coating deposited on the heat-generating support member, said coating having opening(s) through which impurity gases are released from the heat-generating support member.

5. 发明申请

WO1993013244A1 SURFACE REACTION FILM FORMATION APPARATUS 审中-公开
标题翻译：表面反应膜形成装置
公开(公告)号：WO1993013244A1
公开(公告)日：1993-07-08
申请号：PCT/JP1988000066
申请日：1988-01-28
申请人： OHMI, Tadahiro , UMEDA, Masaru
IPC分类号： C23C16/48
CPC分类号： C23C16/455 , C23C16/483
摘要： This invention relates to an apparatus for forming a high-quality thin film at a high speed. This invention is characterized by including an evacuation means, a starting gas supply means, a ceramic filter for blowing out a starting gas, disposed at a position facing a wafer susceptor equipped with a heating means and an activation means for the starting gas in order to improve adsoprtion probability of the starting gas to the wafer surface.

6. 发明申请

WO1989012909A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO1989012909A1
公开(公告)日：1989-12-28
申请号：PCT/JP1989000599
申请日：1989-06-15
申请人： OHMI, Tadahiro , SHIBATA, Tadashi , UMEDA, Masaru
IPC分类号： H01L21/203
CPC分类号： H01L29/66772 , H01L21/0242 , H01L21/02422 , H01L21/02491 , H01L21/02532 , H01L21/02631 , H01L21/84 , Y10S148/158
摘要： A method of fabricating semiconductor devices and, particularly, an art for forming thin-film semiconductor elements on a substrate. The fabrication method comprises a step for forming a conductor layer having a step on at least a portion on one main surface of the substrate, and a step for forming a semiconductor thin film on the substrate under the condition where a dc potential is being given to the conductor layer. The low-temperature process of the invention makes it possible to easily form a single-crystal semiconductor layer of high quality on any insulating substrate. Therefore, very high-speed semiconductor devices and high-performance flat panel displays can be manufactured.

7. 发明申请

WO1990000155A1 ULTRA-PURE WATER SUPPLY PIPING ARRANGEMENT APPARATUS 审中-公开
标题翻译：超纯水管道布置装置
公开(公告)号：WO1990000155A1
公开(公告)日：1990-01-11
申请号：PCT/JP1989000648
申请日：1989-06-29
申请人： OHMI, Tadahiro , KAWAKAMI, Michiya , SHIBATA, Tadashi , UMEDA, Masaru
IPC分类号： C02F01/00
CPC分类号： B01D61/22 , C02F1/006 , C02F1/32 , C02F1/444 , Y10S210/90
摘要： In a ultra-pure water supply piping arrangement apparatus including a circulation water tank (502) for storing primary pure water from a primary pure water production apparatus, a pump (503) for pressure-feeding the primary pure water from the circulation water tank, a return pipe (510) one of the ends of which is connected to a final purifier for purifying the primary pure water from the pump to ultra-pure water, a plurality of connection pipes (513 ∩ 515) to one end of which the other end of the return pipe is connected, branch pipes (516 ∩ 518) connected between the intermediate portions of the connection pipes and a ultra-pure water using apparatus and having branch valves (516 ∩ 518) for adjusting the feed water quantity and a return pipe (512) connected to the other end of each connection pipe and the circulation water tank, the present invention provides a piping arrangement apparatus which includes means for controlling the output of the pump by detecting the pressure of water passing through the return pipe so as to keep the pressure of passing water constant and supply always a predetermined quantity of ultra-pure water to the ultra-pure water using apparatus, which can prevent backflow from the return pipe to the ultra-pure water using apparatus and which can always supply stably the ultra-pure water having ultra-high purity.

8. 发明申请

WO02080260A9 DEPOSITION METHOD, DEPOSITION APPARATUS, INSULATING FILM AND SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
标题翻译：沉积方法，沉积装置，绝缘膜和半导体集成电路
公开(公告)号：WO02080260A9
公开(公告)日：2003-03-13
申请号：PCT/JP0202837
申请日：2002-03-25
申请人： WATANABE M & CO LTD , SUGINO TAKASHI , KUSUHARA MASAKI , UMEDA MASARU
发明人： SUGINO TAKASHI , KUSUHARA MASAKI , UMEDA MASARU
IPC分类号： C23C16/38 , C23C16/36 , C23C16/452 , C23C16/509 , H01L21/31 , H01L21/314 , H01L21/318 , H01L21/768 , H01L23/522
CPC分类号： H01L21/318 , C23C16/36 , C23C16/452 , C23C16/509
摘要： A deposition method and a deposition apparatus for depositing a boron carbon nitrogen film. A boron carbon nitride film (61) is deposited over a substrate (60) by generating a plasma (50) in a cylindrical enclosure (1), exciting mainly nitrogen atoms in the cylindrical enclosure (1), and then causing them to react with boron and carbon.
摘要翻译：一种用于沉积硼碳氮膜的沉积方法和沉积装置。通过在圆筒形外壳（1）中产生等离子体（50），主要激发圆筒形外壳（1）中的氮原子，然后使它们与硼和碳。

9. 发明申请

WO1992009103A1 DEVICE AND METHOD FOR CARRYING THIN PLATE-LIKE SUBSTRATE 审中-公开
标题翻译：用于承载薄板状基板的装置和方法
公开(公告)号：WO1992009103A1
公开(公告)日：1992-05-29
申请号：PCT/JP1991001469
申请日：1991-10-28
申请人： KABUSHIKI-KAISHA WATANABE SHOKO , TODA, Masayuki , ONODA, Tohru , OHMI, Tadahiro , UMEDA, Masaru , KANNO, Yoichi
发明人： KABUSHIKI-KAISHA WATANABE SHOKO
IPC分类号： H01L21/68
CPC分类号： H01L21/67787 , B65G51/03 , H01L21/67784 , Y10S414/135 , Y10S414/136
摘要： A device for carrying a thin plate-like substrate such as a semiconductor wafer and controlling its position by floating it with an inert gas of low impurity concentration. A transferring unit and a controlling unit are respectively provided with gas nozzles for floating a thin plate-like substrate and with a gas exhausting and circulating system, and a plurality of them are in combination with each other in a sealing state. The controlling unit, further, has a vacuum suction hole at its controlling center, and is provided with nozzles for controlling the thin plate-like substrate in its radial and cirumferential direction respectively and with nozzles for stopping the thin plate-like substrate or sending out it to the next unit too. On the bottom face of a control space, grooves extending from the vacuum suction hole are formed for improving the positional accuracy of stopping the thin plate-like substrate, and they are closed on the insides of their circumferential parts when the center of the thin plate-like substrate has coincided with the controlling center of the controlling unit.

10. 发明申请

WO1990000633A1 GAS SUPPLY PIPELINE SYSTEM FOR PROCESS EQUIPMENT 审中-公开
标题翻译：用于过程设备的气体供应管道系统
公开(公告)号：WO1990000633A1
公开(公告)日：1990-01-25
申请号：PCT/JP1989000690
申请日：1989-07-07
申请人： OHMI, Tadahiro , NAKAHARA, Fumio , SATOH, Tuyosi , UMEDA, Masaru
IPC分类号： C23C16/44
CPC分类号： B08B9/0325 , C23C14/564 , C23C16/4402 , C23C16/4404
摘要： A gas supply pipeline system for process equipment, adapted to supply at least two kinds of process gas, and provided with at least two valves (135, 136, 139, 140) installed in each of independent flow passages formed between process gas supply pipelines and a purge gas supply pipe line, and at least two valves (137, 138, 141, 142) installed in each of a plurality of flow passages formed between the process gas supply pipelines and the pipelines in the process equipment. Each of the process gas supply pipelines and each of the pipelines in the process equipment can be purged and vacuumed by at least two valves in each of these flow passages that are opened or closed independently, and the stagnation of a gas in the pipelines not in use can be prevented by introducing a purge gas constantly thereinto.
摘要翻译：一种用于工艺设备的气体供应管道系统，适于提供至少两种工艺气体，并且设置有至少两个安装在过程气体供应管线和工艺气体供应管线之间形成的独立流动通道中的阀门（135,136,139,140）吹扫气体供给管线和至少两个安装在处理设备中的处理气体供应管线和管道之间形成的多个流动通道中的每一个中的阀门（137,138,141,142）。处理设备中的每个工艺气体供应管线和每个管道可以通过独立打开或关闭的这些流动通道中的每一个中的至少两个阀进行清洗和抽真空，并且管道中的气体停滞在可以通过恒定地引入吹扫气体来防止使用。

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