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1. 发明公开

CN1088002A 制造液晶显示器基板及评价半导体晶体的方法与装置无效
公开(公告)号：CN1088002A
公开(公告)日：1994-06-15
申请号：CN93114676.3
申请日：1993-11-16
申请人：东京电子株式会社
发明人：今桥一成 , 浜贵一 , 烟次郎
IPC分类号： G02F1/133 , H01L21/26 , H01L25/00
CPC分类号： H01L21/02422 , C23C16/24 , G02F1/13454 , H01L21/02532 , H01L21/0262 , H01L21/02686 , Y10S148/006 , Y10S148/09 , Y10S148/15
摘要：用CVD法在一块玻璃基板上形成一层非晶硅膜，然后用一个激光束照射部件将与岛形区同样尺寸的激光束脉冲间隙性地照射在非晶硅膜上而将非晶硅膜的岛形区改变成排列成一行并以预定的距离互相分隔开的多个多晶硅区。包含作为半导体区的岛形区的开关元件是通过蚀刻与膜形成处理形成的，以构成一个驱动电路区。该区分成门驱动电路区与源驱动电路区用于驱动形成在一个象素区中的薄膜晶体管。

2. 发明公开

EP0339771A3 Etching method 失效
标题翻译：蚀刻方法
公开(公告)号：EP0339771A3
公开(公告)日：1989-11-15
申请号：EP89302063.6
申请日：1989-03-01
申请人： BRITISH TELECOMMUNICATIONS public limited company
发明人： Durose, Kenneth
IPC分类号： H01L21/306 , H01L21/205 , H01L21/20
CPC分类号： H01L21/30621 , H01L21/3086 , H01L21/31105 , H01L21/31654 , Y10S148/006 , Y10S148/051 , Y10S148/071 , Y10S148/094 , Y10S148/11 , Y10S438/913
摘要： MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching. To prevent pattern broadening by diffussion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing to substrate to 20% 0₂ + 80%N₂ for about 3 minutes at 450°C.

3. 发明申请

WO1989009489A2 ETCHING METHOD 审中-公开
标题翻译：蚀刻方法
公开(公告)号：WO1989009489A2
公开(公告)日：1989-10-05
申请号：PCT/GB1989000213
申请日：1989-03-01
申请人： BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY
发明人： BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY , DUROSE, Kenneth
IPC分类号： H01L21/20
CPC分类号： H01L21/30621 , H01L21/3086 , H01L21/31105 , H01L21/31654 , Y10S148/006 , Y10S148/051 , Y10S148/071 , Y10S148/094 , Y10S148/11 , Y10S438/913
摘要： MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching. To prevent pattern broadening by diffusion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing the substrate to 20 % O2 + 80 % N2 for about 3 minutes at 450°C.

4. 发明公开

EP0598394A2 Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals 失效
标题翻译：方法和装置用于制造液晶显示装置的基板，并且所述设备和方法用于半导体晶体的评估。
公开(公告)号：EP0598394A2
公开(公告)日：1994-05-25
申请号：EP93118519.3
申请日：1993-11-16
申请人： TOKYO ELECTRON LIMITED
发明人： Imahashi, Issei, c/o OPERATIONAL HEAD OFFICE , Hama, Kiichi, c/o OPERATIONAL HEAD OFFICE , Hata, Jiro, c/o OPERATIONAL HEAD OFFICE
IPC分类号： H01L21/82 , H01L21/20 , H01L21/68
CPC分类号： H01L21/02422 , C23C16/24 , G02F1/13454 , H01L21/02532 , H01L21/0262 , H01L21/02686 , Y10S148/006 , Y10S148/09 , Y10S148/15
摘要： An amorphous silicon film (2) is formed on a glass substrate (1) by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions (21) which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section (3). Switching elements including the island regions (21) as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section (4). The section (4) is divided to gate driving circuit sections (41) and source driving circuit sections (42) for driving thin film transistors formed in a pixel region (50).
摘要翻译：非晶硅薄膜 - （2）通过CVD法形成在玻璃（1），然后将非晶硅的冰岛区域薄膜被改变为多晶硅区的多个（21），它们是在一个线路基片布置并开的海誓山盟在预定通过间歇地照射每个具有相同的尺寸与所述区域冰岛的激光脉冲到非晶硅膜，电影，使用激光束照射部间隔（3）。开关包括作为半导体区域是通过蚀刻和成膜工艺形成，以构成驱动电路部分（4）的区域冰岛（21）的元件。的部分（4）被划分到栅极驱动电路部分（41）和源极驱动电路部（42），用于驱动在像素区域（50）形成的薄膜晶体管。

5. 发明公开

EP0339771A2 Etching method 失效
标题翻译：方法zumÄtzen。
公开(公告)号：EP0339771A2
公开(公告)日：1989-11-02
申请号：EP89302063.6
申请日：1989-03-01
申请人： BRITISH TELECOMMUNICATIONS public limited company
发明人： Durose, Kenneth
IPC分类号： H01L21/306 , H01L21/205 , H01L21/20
CPC分类号： H01L21/30621 , H01L21/3086 , H01L21/31105 , H01L21/31654 , Y10S148/006 , Y10S148/051 , Y10S148/071 , Y10S148/094 , Y10S148/11 , Y10S438/913
摘要： MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching.
To prevent pattern broadening by diffussion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing to substrate to 20% 0₂ + 80%N₂ for about 3 minutes at 450°C.
摘要翻译： MOVPE生长和光蚀刻被集成到一个统一的序列中，而不需要从MOVPE反应器中移除工件。生长可以在蚀刻之前，之后或之前和之后进行。为了通过活性物质的扩散来防止图案变宽，基底优选由被照明除去的短片涂覆保护。天然氧化物涂层特别适用于InGaAsP基板。这些通过在450℃下暴露于基质至20％O 2 + 80％N 2约3分钟来方便地施用。

6. 发明公开

EP0513940A2 Etching method 失效
标题翻译： Ätzverfahren。
公开(公告)号：EP0513940A2
公开(公告)日：1992-11-19
申请号：EP92202432.8
申请日：1989-03-01
申请人： BRITISH TELECOMMUNICATIONS public limited company
发明人： Durose, Kenneth
IPC分类号： H01L21/306 , H01L21/308
CPC分类号： H01L21/30621 , H01L21/3086 , H01L21/31105 , H01L21/31654 , Y10S148/006 , Y10S148/051 , Y10S148/071 , Y10S148/094 , Y10S148/11 , Y10S438/913
摘要： It has been noticed that the patterns produced by photoetching are subject to pattern broadening where the results are not as sharp as expected. It has now been realised that this is partially caused by the diffussion of the active species away from the region where they were created. To reduce this pattern broadening, the substrate is protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing to substrate to 20⁰/o O₂ + 80⁰/oN₂ for about 3 minutes at 450⁰C.

7. 发明公开

EP0308946A2 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness 失效
标题翻译：为生产高品质的外延层的具有均匀密度化学气相沉积装置。
公开(公告)号：EP0308946A2
公开(公告)日：1989-03-29
申请号：EP88115622.8
申请日：1988-09-22
申请人： NEC CORPORATION
发明人： Shishiguchi, Seiichi, c/o NEC Corporation , Toyokawa, Fumitoshi, c/o NEC Corporation , Mikami, Masao, c/o NEC Corporation
IPC分类号： C30B25/14 , C30B25/12
CPC分类号： C30B25/12 , C30B25/14 , Y10S148/006 , Y10S438/935
摘要： A chemical vapor deposition apparatus includes a reaction tube, a substrate-holder installed in the reaction tube (7), the substrate-holder (6) holding a plurality of substrates in a vertical direction, surfaces of the substrates being held horizontally, a rotating-means for rotating the substrate-holder, a heating-means (13) for heating the substrates, a first gas-supply nozzle tube (9) installed vertically in the reaction tube, the first gas-supply nozzle tube having a first vertical gas-emission line of a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube (8) installed vertically in the reaction tube, the second gas-supply nozzle tube having a second vertical gas-emission line, a plurality of second gas-emission holes (10) aligned in a vertical direction, a first gas-emitting-axis of the first gas-emission holes intersecting with a second gas-emitting-axis of the second gas-emission holes at a first intersection over the substrate, the first intersection of the first and second gas-emitting axes being deviated from the rotation center of the substrate-holder.
摘要翻译：一种化学气相沉积设备包括反应管中，在衬底保持器安装在反应管（7）中，在基板保持器（6）保持基板的多个沿垂直方向，在基板的表面上被水平地保持，旋转 - 用于加热基板，第一供气喷嘴管旋转衬底保持器，一个加热装置（13）（9）在反应管垂直安装，具有第一垂直气体的第一气体供给喷嘴管在垂直方向上对齐的第一气体排放孔的多个，并且在反应管垂直安装的第二气体供给喷嘴管（8）的发射线，具有第二垂直气体排放第二气体供给喷嘴管线，第二气体排放孔在垂直方向上排列的多个（10）中，第一气体排放孔的第一气体排放轴与第二气体排放孔中的第二气体的发光轴相交在SUBSTR的第一交叉点吃，第一和第二气体的发光轴的第一交叉正在从基板保持器的旋转中心偏离。

8. 发明申请

WO1993013548A1 WAFER SUSCEPTOR 审中-公开
公开(公告)号：WO1993013548A1
公开(公告)日：1993-07-08
申请号：PCT/JP1988000067
申请日：1988-01-28
申请人： OHMI, Tadahiro , UMEDA, Masaru
IPC分类号： H01L21/205
CPC分类号： H01L21/68757 , H01L21/67103 , H01L21/68771 , Y10S148/006 , Y10T29/413
摘要： The present invention relates to a wafer susceptor for supporting and heating semiconductor wafers that is provided in a reaction chamber of an apparatus for fabricating semiconductors. The wafer susceptor comprises a heat-generating support member for supporting and heating the wafer, and a fine coating deposited on the heat-generating support member, said coating having opening(s) through which impurity gases are released from the heat-generating support member.

9. 发明申请

WO8909489A3 ETCHING METHOD 审中-公开
标题翻译：蚀刻方法
公开(公告)号：WO8909489A3
公开(公告)日：1989-10-19
申请号：PCT/GB8900213
申请日：1989-03-01
申请人： BRITISH TELECOMM
发明人： DUROSE KENNETH
IPC分类号： H01L21/302 , H01L21/20 , H01L21/205 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/316
CPC分类号： H01L21/30621 , H01L21/3086 , H01L21/31105 , H01L21/31654 , Y10S148/006 , Y10S148/051 , Y10S148/071 , Y10S148/094 , Y10S148/11 , Y10S438/913
摘要： MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching. To prevent pattern broadening by diffusion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing the substrate to 20 % O2 + 80 % N2 for about 3 minutes at 450°C.
摘要翻译：将MOVPE生长和光刻集成到一个统一的序列中，不需要从MOVPE反应器中取出工件即可进行。生长可以在蚀刻之前，之后或之前和之后进行。为了防止活性物质扩散引起的图案变宽，基材优选通过由照明除去的易损涂层来保护。自然氧化物涂层特别适用于InGaAsP衬底。通过在450℃下将底物暴露于20％O 2 + 80％N 2约3分钟而方便地施用这些。

10. 发明公开

EP0513940A3 Etching method 失效
标题翻译：蚀刻方法
公开(公告)号：EP0513940A3
公开(公告)日：1993-01-20
申请号：EP92202432.8
申请日：1989-03-01
申请人： BRITISH TELECOMMUNICATIONS public limited company
发明人： Durose, Kenneth
IPC分类号： H01L21/306 , H01L21/308
CPC分类号： H01L21/30621 , H01L21/3086 , H01L21/31105 , H01L21/31654 , Y10S148/006 , Y10S148/051 , Y10S148/071 , Y10S148/094 , Y10S148/11 , Y10S438/913
摘要： It has been noticed that the patterns produced by photoetching are subject to pattern broadening where the results are not as sharp as expected. It has now been realised that this is partially caused by the diffussion of the active species away from the region where they were created. To reduce this pattern broadening, the substrate is protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing to substrate to 20⁰/o O₂ + 80⁰/oN₂ for about 3 minutes at 450⁰C.

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