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1. 发明申请

US20050014667A1 Aqueous fluoride compositions for cleaning semiconductor devices 失效
标题翻译：氟化物组合物，用于清洁半导体器件
公开(公告)号：US20050014667A1
公开(公告)日：2005-01-20
申请号：US10826319
申请日：2004-04-19
申请人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
发明人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
IPC分类号： C11D7/08 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/50 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/768 , C11D1/00
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/263 , C11D7/28 , C11D7/3218 , C11D7/3263 , C11D7/5013 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76814
摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.
摘要翻译：本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

2. 发明授权

US07399365B2 Aqueous fluoride compositions for cleaning semiconductor devices 失效
标题翻译：氟化物组合物，用于清洁半导体器件
公开(公告)号：US07399365B2
公开(公告)日：2008-07-15
申请号：US10826319
申请日：2004-04-19
申请人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
发明人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
IPC分类号： B08B3/04 , C11D7/50
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/263 , C11D7/28 , C11D7/3218 , C11D7/3263 , C11D7/5013 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76814
摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.
摘要翻译：本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

3. 发明授权

US07250391B2 Cleaning composition for removing resists and method of manufacturing semiconductor device 失效
标题翻译：用于除去抗蚀剂的清洁组合物和制造半导体器件的方法
公开(公告)号：US07250391B2
公开(公告)日：2007-07-31
申请号：US10617128
申请日：2003-07-11
申请人： Itaru Kanno , Yasuhiro Asaoka , Masahiko Higashi , Yoshiharu Hidaka , Etsuro Kishio , Tetsuo Aoyama , Tomoko Suzuki , Toshitaka Hiraga , Toshihiko Nagai
发明人： Itaru Kanno , Yasuhiro Asaoka , Masahiko Higashi , Yoshiharu Hidaka , Etsuro Kishio , Tetsuo Aoyama , Tomoko Suzuki , Toshitaka Hiraga , Toshihiko Nagai
IPC分类号： C11D7/50
CPC分类号： H01L21/02063 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L21/76831 , H01L21/76838
摘要： The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.
摘要翻译：用于除去抗蚀剂的清洁组合物包括氢氟酸盐和不含金属的基质（A组分），水溶性有机溶剂（B1组分），至少一种有机酸或无机酸（C组分），水（ D成分）和任选的铵盐（E1成分），pH4〜8。因此，在制造诸如铜互连工艺的半导体器件时，蚀刻或灰化后除去抗蚀剂残留物和其它蚀刻残留物的效率提高，铜和绝缘膜的耐腐蚀性也得到改善。

4. 发明申请

US20090099051A1 Aqueous fluoride compositions for cleaning semiconductor devices 审中-公开
标题翻译：氟化物组合物，用于清洁半导体器件
公开(公告)号：US20090099051A1
公开(公告)日：2009-04-16
申请号：US12173352
申请日：2008-07-15
申请人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
发明人： Tetsuo Aoyama , Toshitaka Hiraga , Tomoko Suzuki
IPC分类号： C11D7/32
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/263 , C11D7/28 , C11D7/3218 , C11D7/3263 , C11D7/5013 , C11D11/0047 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76814
摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.
摘要翻译：本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

5. 发明授权

US07341827B2 Separation-material composition for photo-resist and manufacturing method of semiconductor device 失效
标题翻译：用于光刻胶的分离材料组合物和半导体器件的制造方法
公开(公告)号：US07341827B2
公开(公告)日：2008-03-11
申请号：US10640389
申请日：2003-08-14
申请人： Masafumi Muramatsu , Hayato Iwamoto , Kazumi Asada , Tomoko Suzuki , Toshitaka Hiraga , Tetsuo Aoyama
发明人： Masafumi Muramatsu , Hayato Iwamoto , Kazumi Asada , Tomoko Suzuki , Toshitaka Hiraga , Tetsuo Aoyama
IPC分类号： G03F7/26
CPC分类号： H01L21/32136 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76838
摘要： One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.
摘要翻译：根据本发明的用于光刻胶的分离材料组合物的一个实例包括5.0重量％的氨基磺酸，34.7重量％的H 2 O 3，0.3重量％的1位氢氟酸铵，30重量％的N，N-二甲基乙酰胺和30重量％的二甘醇单正丁醚。根据本发明的用于光致抗蚀剂的分离材料组合物的另一个实例包括1-羟基亚乙基-1.3.0重量％的1-二膦酸，0.12重量％的氟化铵，48.38重量％的H 2 O和48.5重量％的二甘醇单正丁基醚。用于光刻胶的分离材料组合物主要用于医用液体洗涤液/科学液体，以便在光刻胶掩模的灰化过程之后除去光致抗蚀剂残留物和副产物聚合物。可以提出用于光刻胶的分离材料组合物，使得光刻胶残留物和副产物聚合物在干蚀刻工艺之后容易除去，同时避免了低介电常数绝缘膜侵蚀和氧化。

6. 发明申请

US20080076260A1 Separation-material composition for photo-resist and manufacturing method of semiconductor device 审中-公开
标题翻译：用于光刻胶的分离材料组合物和半导体器件的制造方法
公开(公告)号：US20080076260A1
公开(公告)日：2008-03-27
申请号：US11979582
申请日：2007-11-06
申请人： Masafumi Muramatsu , Hayato Iwamoto , Kazumi Asada , Tomoko Suzuki , Toshitaka Hiraga , Testu Aoyama
发明人： Masafumi Muramatsu , Hayato Iwamoto , Kazumi Asada , Tomoko Suzuki , Toshitaka Hiraga , Testu Aoyama
IPC分类号： G03C5/00 , G03F7/42 , H01L21/461
CPC分类号： H01L21/32136 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/31116 , H01L21/31133 , H01L21/76802 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76838
摘要： One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of ammonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthyl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.
摘要翻译：根据本发明的用于光刻胶的分离材料组合物的一个实例包括5.0重量％的氨基磺酸，34.7重量％的H 2 O 3，0.3重量％的1位氢氟酸铵，30重量％的N，N-二甲基乙酰胺和30重量％的二甘醇单正丁醚。根据本发明的光刻胶分离材料组合物的另一个实例包括1-羟基亚乙基-1.3.0重量％的1-二膦酸，0.12重量％的氟化铵，48.38重量％的H 2 O和48.5重量％的二甘醇单正丁醚。用于光刻胶的分离材料组合物主要用于医用液体洗涤液/科学液体，以便在光刻胶掩模的灰化过程之后除去光致抗蚀剂残留物和副产物聚合物。可以提出用于光刻胶的分离材料组合物，使得光刻胶残留物和副产物聚合物在干蚀刻工艺之后容易除去，同时避免了低介电常数绝缘膜侵蚀和氧化。

7. 发明授权

US07718590B2 Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material 有权
标题翻译：从具有铜和低k电介质材料的衬底上去除抗蚀剂，蚀刻残留物和氧化铜的方法
公开(公告)号：US07718590B2
公开(公告)日：2010-05-18
申请号：US11360810
申请日：2006-02-24
申请人： Tomoko Suzuki , Toshitaka Hiraga , Yasuo Katsuya , Chris Reid
发明人： Tomoko Suzuki , Toshitaka Hiraga , Yasuo Katsuya , Chris Reid
IPC分类号： C11D7/50
CPC分类号： G03F7/425 , C11D7/10 , C11D7/263 , C11D7/265 , C11D7/3218 , C11D7/3245 , C11D7/36 , C11D7/5004 , C11D11/0047 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/31133 , H01L21/32134
摘要： A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, typically for a period of 30 seconds to 30 minutes, and at a temperature between 25° and 45° C. The composition includes a fluoride-providing component; at least 1% by weight of a water miscible organic solvent; an organic acid; and at least 81% by weight water. Typically the composition further includes up to about 0.4% of one or more chelators.
摘要翻译：描述了特别适用于从包含铜和低k电介质材料的衬底去除一种或多种抗蚀剂，蚀刻残余物，平坦化残基和氧化铜的各种组合物。抗蚀剂，残余物和氧化铜通过将基底表面与组合物接触，通常在30秒至30分钟的时间内和在25℃至45℃之间的温度下除去。该组合物包括提供氟化物的组分 ; 至少1重量％的水混溶性有机溶剂; 有机酸; 和至少81重量％的水。通常，组合物还包含至多约0.4％的一种或多种螯合剂。

8. 发明申请

US20060199749A1 Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material 有权
标题翻译：从具有铜和低k电介质材料的衬底上去除抗蚀剂，蚀刻残留物和氧化铜的方法
公开(公告)号：US20060199749A1
公开(公告)日：2006-09-07
申请号：US11360810
申请日：2006-02-24
申请人： Tomoko Suzuki , Toshitaka Hiraga , Yasuo Katsuya , Chris Reid
发明人： Tomoko Suzuki , Toshitaka Hiraga , Yasuo Katsuya , Chris Reid
IPC分类号： C11D7/32
CPC分类号： G03F7/425 , C11D7/10 , C11D7/263 , C11D7/265 , C11D7/3218 , C11D7/3245 , C11D7/36 , C11D7/5004 , C11D11/0047 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/31133 , H01L21/32134
摘要： A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, typically for a period of 30 seconds to 30 minutes, and at a temperature between 25° and 45° C. The composition includes a fluoride-providing component; at least 1% by weight of a water miscible organic solvent; an organic acid; and at least 81% by weight water. Typically the composition further includes up to about 0.4% of one or more chelators.
摘要翻译：描述了特别适用于从包含铜和低k电介质材料的衬底去除一种或多种抗蚀剂，蚀刻残余物，平坦化残基和氧化铜的各种组合物。抗蚀剂，残余物和氧化铜通过将基底表面与组合物接触，通常在30秒至30分钟的时间内和在25℃至45℃之间的温度下除去。该组合物包括提供氟化物的组分 ; 至少1重量％的水混溶性有机溶剂; 有机酸; 和至少81重量％的水。通常，组合物还包含至多约0.4％的一种或多种螯合剂。

9. 发明授权

US07087563B2 Resist stripping composition and method of producing semiconductor device using the same 有权
标题翻译：抗剥离组合物及使用其制造半导体器件的方法
公开(公告)号：US07087563B2
公开(公告)日：2006-08-08
申请号：US10467354
申请日：2002-12-04
申请人： Hayato Iwamoto , Ryuichi Kanamura , Ai Endou , Tomoko Suzuki , Toshitaka Hiraga
发明人： Hayato Iwamoto , Ryuichi Kanamura , Ai Endou , Tomoko Suzuki , Toshitaka Hiraga
IPC分类号： C11D7/50
CPC分类号： G03F7/425 , G03F7/422 , G03F7/423 , H01L21/02052 , H01L21/76802
摘要： A resist stripping composition capable of reliably stripping off resist residue or polymer residue and keeping damage to the interconnects to a minimum and a method of producing a semiconductor device using the same, where the resist stripping composition comprises a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and has a hydrogen ion concentration of at least 8. The method of production of a semiconductor device comprises dry etching a metal layer or a semiconductor layer on a semiconductor substrate to form an interconnect layer having a predetermined pattern or forming an insulation layer on a semiconductor substrate formed with an interconnect layer and dry etching this to a predetermined pattern, then performing chemical treatment using a resist stripping composition comprising a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and having a hydrogen ion concentration of at least 8.
摘要翻译：能够可靠地剥离抗蚀剂残留物或聚合物残余物并将互连件的损伤保持最小化的抗蚀剂剥离组合物和使用其的制造半导体器件的方法，其中抗蚀剂剥离组合物包含氢氟酸盐和不含碱包括金属，有机溶剂，糖醇如木糖醇和水，并且具有至少8的氢离子浓度。半导体器件的制造方法包括在半导体衬底上干蚀刻金属层或半导体层以形成具有预定图案的互连层或在形成有互连层的半导体衬底上形成绝缘层，并将其干蚀刻至预定图案，然后使用包含氢氟酸盐和碱的抗蚀剂剥离组合物进行化学处理不包括金属，有机溶剂，糖醇如木糖醇，以及水和氢离子浓度至少为8。

10. 发明授权

US08497087B2 Method for producing target substance by fermentation 有权
标题翻译：通过发酵生产目标物质的方法
公开(公告)号：US08497087B2
公开(公告)日：2013-07-30
申请号：US11275900
申请日：2006-02-02
申请人： Nobuharu Tsujimoto , Tomoko Suzuki , Hisao Ito
发明人： Nobuharu Tsujimoto , Tomoko Suzuki , Hisao Ito
IPC分类号： C12P1/00 , C12P13/04 , C12P13/22 , C12P13/08 , C12N1/21
CPC分类号： C07K14/245 , C12P13/04 , C12P13/08 , C12P13/222
摘要： A method for producing a target substance by utilizing a microorganism by culturing the microorganism in a medium to produce and accumulate the target substance in the medium and collecting the target substance from the culture is described. The microorganism is a mutant recombinant strain in which maltose assimilation is controlled by reducing or eliminating the interaction between IIAGlc protein of the glucose PTS and a protein involved in non-PTS uptake of maltose.
摘要翻译：描述了通过在培养基中培养微生物来生产和积累目标物质并从培养物中收集目标物质的微生物生产目标物质的方法。该微生物是通过减少或消除葡萄糖PTS的IIAGlc蛋白与参与非PTS摄取麦芽糖的蛋白质之间的相互作用来控制麦芽糖同化的突变重组菌株。

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