专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011173105A Treatment method of greenhouse gas in high altitude 审中-公开
标题翻译：高寒地区温室气体处理方法
公开(公告)号：JP2011173105A
公开(公告)日：2011-09-08
申请号：JP2010055073
申请日：2010-02-23
申请人： Shigenobu Fujimoto , Tatsuo Fujimoto , 達男藤本 , 重信藤本
发明人： FUJIMOTO TATSUO , FUJIMOTO SHIGENOBU
IPC分类号： B01D53/62 , B01D53/14 , B01D53/72 , B64C39/02
CPC分类号： Y02P20/151
摘要： PROBLEM TO BE SOLVED: To solve problems wherein, mixed gas remaining at high atmospheric altitude includes carbon dioxide gas CO 2 and methane gas CH 4 remaining and increasing, surrounding the Earth like an egg shell at a roughly fixed altitude, with different concentrations respectively, causing climatic variation, adversely changing the life environmental conditions of the Earth, by a method and a technology of forcibly collecting the two global warming gases remaining at the high altitude for remove environmental pollution, is not available in the past. SOLUTION: Carbon dioxide gas CO 2 is soluble in sodium carbonate water as an original property, is an important substance used for the chemical industry material, not considered as the origin of the environmental pollution. Therefore, the carbon dioxide gas existing on the surfaces of the Earth and oceans is not the object of the environmental pollution. The prevention of the global warming is to remove and sweep the greenhouse gases of carbon dioxide gas CO 2 and methane gas CH 4 remaining at high atmospheric altitude. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了解决在高空气高度保持的混合气体包括二氧化碳气体CO 2 和甲烷气体CH 4 存在和增加的问题，周围地球像一个大致固定的高度的蛋壳，分别有不同的浓度，引起气候变化，对地球的生命环境条件产生不利影响，强制收集高海拔地区的两种全球变暖气体的方法和技术为了消除环境污染，过去不可用。
解决方案：二氧化碳气体CO 2 作为原始性质溶于碳酸钠水溶液，是化学工业材料中使用的重要物质，不被认为是环境污染的起源。因此，存在于地球和海洋表面的二氧化碳气体不是环境污染的对象。预防全球变暖是为了清除和清除二氧化碳气体CO 2 和甲烷气CH 4 的温室气体，保持在高空气高度。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010188334A Treatment method of carbon dioxide in mixed gas 审中-公开
标题翻译：二氧化碳在混合气中的处理方法
公开(公告)号：JP2010188334A
公开(公告)日：2010-09-02
申请号：JP2009060200
申请日：2009-02-19
申请人： Shigenobu Fujimoto , Tatsuo Fujimoto , Chieko Kawamura , Kunihiko Kawamura , チヱ子河村 , 邦彦河村 , 達男藤本 , 重信藤本
发明人： FUJIMOTO TATSUO , FUJIMOTO SHIGENOBU , KAWAMURA KUNIHIKO , KAWAMURA CHIEKO
IPC分类号： B01D53/62 , B01D53/14 , C01B32/50
CPC分类号： Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： PROBLEM TO BE SOLVED: To provide a treatment method of carbon dioxide in a mixed gas which captures, for example, only carbon dioxide CO 2 in a mixed gas by separation extraction notwithstanding the mixed proportion and detoxifies the same to release. SOLUTION: Carbon dioxide CO 2 is melted in an equal amount of water under 1 barometric pressure at an ordinary temperature as the original characteristics. Therefore, the method comprises steps of atomizing water to form the same phase of gas so that carbon dioxide CO 2 and water can be easily mixed with each other, bringing the mixed proportion close to the equal amount molten state in a countercurrent state with a gradient shape, then lowering the temperature to the dew point or lower to liquefy the same and conducting the separation extraction treatment of the water having the purified mixed gas and carbon dioxide CO 2 melted therein. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：为了提供混合气体中的二氧化碳的处理方法，其通过分离提取即可获得例如仅混合气体中的二氧化碳CO 2 SBS 2 ，尽管混合比例和解毒同样释放。解决方案：在常压下，在1个大气压力下，将二氧化碳CO 2 在等量的水中熔化，作为原始特性。因此，该方法包括使水雾化以形成相同的气相，使得二氧化碳CO 2和水容易混合，使混合比例接近等于熔融态在具有梯度形状的逆流状态下，将温度降低到露点以下使其液化，对具有纯化的混合气体和二氧化碳CO 2 的水进行分离提取处理在其中。版权所有（C）2010，JPO＆INPIT

3. 发明授权

US09691607B2 Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same 有权
公开(公告)号：US09691607B2
公开(公告)日：2017-06-27
申请号：US13639309
申请日：2011-04-07
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L21/02 , C30B25/10 , C30B29/36
CPC分类号： H01L21/02378 , C30B25/10 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661
摘要： Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

4. 发明授权

US08936680B2 Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method 有权
标题翻译：具有用于制造单晶碳化硅的槽的坩埚容器和坩埚盖，制造装置和方法
公开(公告)号：US08936680B2
公开(公告)日：2015-01-20
申请号：US13138526
申请日：2010-02-25
申请人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
发明人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
IPC分类号： C30B23/02 , C30B23/00 , C30B29/36 , H01L21/02
CPC分类号： C30B29/36 , C30B23/005 , H01L21/02378 , H01L21/02433 , H01L21/02529 , Y10T117/10
摘要： The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus.
摘要翻译：提供一种用于制造单晶碳化硅的坩埚的本发明以及能够以高产率稳定地生长结晶度良好的单晶碳化硅锭的单晶碳化硅的制造装置和制造方法是用于生产具有用于保持碳化硅原料的坩埚容器和用于附着晶种的坩埚盖的单晶碳化硅的坩埚，并且适于使坩埚容器中的碳化硅原料升华以提供碳化硅升华气体在连接到坩埚盖上的籽晶上生长晶种上的单晶碳化硅，在坩埚容器中设置用于制造单晶碳化硅的坩埚，并将具有螺纹部的坩埚盖螺纹连接在一起具有能够通过相对旋转来调节流速的升华气体排出槽或沟槽加入部分并且是配备有这种坩埚的单晶碳化硅的制造装置和利用该装置的单晶碳化硅的制造方法。

5. 发明授权

US08178389B2 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same 有权
标题翻译：单晶碳化硅锭，单晶碳化硅晶圆及其制造方法相同
公开(公告)号：US08178389B2
公开(公告)日：2012-05-15
申请号：US12708124
申请日：2010-02-18
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： H01L21/00
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

6. 发明申请

US20100147212A1 MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：单晶硅碳化硅，单晶硅碳化硅及其制造方法
公开(公告)号：US20100147212A1
公开(公告)日：2010-06-17
申请号：US12708124
申请日：2010-02-18
申请人： Masashi NAKABAYASHI , Tatsuo FUJIMOTO , Mitsuru SAWAMURA , Noboru OHTANI
发明人： Masashi NAKABAYASHI , Tatsuo FUJIMOTO , Mitsuru SAWAMURA , Noboru OHTANI
IPC分类号： C30B23/00
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

7. 发明申请

US20100080956A1 Low resistivity single crystal silicon carbide wafer 有权
标题翻译：低电阻率单晶碳化硅晶圆
公开(公告)号：US20100080956A1
公开(公告)日：2010-04-01
申请号：US12592747
申请日：2009-12-01
申请人： Tatsuo Fujimoto , Noboru Ohtani , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Tatsuo Fujimoto , Noboru Ohtani , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： B32B5/00
CPC分类号： C30B29/36 , C30B23/00 , C30B25/02 , C30B29/403 , C30B33/02 , Y10T428/24355
摘要： The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.
摘要翻译：本发明提供一种用于制造具有优异特性的半导体器件的低电阻率碳化硅单晶晶片。低电阻率碳化硅单晶晶片的比体积电阻为0.001＆OHgr; cm至0.012＆OHgr。cm，90％或更大的整个晶片表面积由粗糙度（Ra）为1.0的SiC单晶表面覆盖 nm以下。

8. 发明申请

US20050160965A1 Seed crystal of silicon carbide single crystal and method for producing ingot using same 审中-公开
标题翻译：碳化硅单晶晶种及其制造方法
公开(公告)号：US20050160965A1
公开(公告)日：2005-07-28
申请号：US10509923
申请日：2003-03-31
申请人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
IPC分类号： C30B23/00 , C30B25/00 , C30B25/20 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B1/00
CPC分类号： C30B25/20 , C30B23/00 , C30B23/005 , C30B25/00 , C30B29/36
摘要： The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.
摘要翻译：本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向从<0001>方向到[1-100]方向从-45度以上到45度以下。通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

9. 发明授权

US5201963A Rare earth magnets and method of producing same 失效
标题翻译：稀土磁铁及其制造方法
公开(公告)号：US5201963A
公开(公告)日：1993-04-13
申请号：US800712
申请日：1991-12-04
申请人： Toshio Mukai , Tatsuo Fujimoto , Toru Inaguma
发明人： Toshio Mukai , Tatsuo Fujimoto , Toru Inaguma
IPC分类号： B22F3/14 , H01F1/057
CPC分类号： H01F1/0576 , B22F3/14
摘要： Rare earth magnets comprising 12 to 20 at % R (where R denotes rare earth elements including at least one selected from neodymium and praseodymium) and 2 to 10 at % boron, with the remainder being TM (where TM=Fe.sub.1-x Co.sub.x (0.ltoreq.x.ltoreq.0.4)) and unavoidable impurities, wherein 50 to 100 vol % of the magnet is formed of recrystallization grains of R.sub.2 Fe.sub.14 B intermetallic compound having a tetragonal crystal structure with an average grain size of 1 to 100 .mu.m and an induced anisotropy P of 0.1 or more (where P=(Br(.parallel.)-Br(.perp.))/(Br(.parallel.)+Br(.perp.)), Br(.parallel.) being residual magnetic flux density along the easy magnetization axis and Br(.perp.) being residual magnetic flux density perpendicular to the easy magnetization axis), and the method of producing the rare earth magnets.
摘要翻译：包含12至20at％R（其中R表示包括选自钕和镨中的至少一种的稀土元素）和2至10at％硼的稀土磁体，其余为TM（其中TM = Fe1-xCox（0 < /=x

10. 发明授权

US08927396B2 Production process of epitaxial silicon carbide single crystal substrate 有权
标题翻译：外延碳化硅单晶衬底的生产工艺
公开(公告)号：US08927396B2
公开(公告)日：2015-01-06
申请号：US13881231
申请日：2011-11-15
申请人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
IPC分类号： H01L21/20 , H01L21/02 , C30B25/18 , C30B29/36 , C30B25/02
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B25/186 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02658 , Y10S438/931
摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.
摘要翻译：本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度为0.0001〜0.0001，从而在1550〜1650℃的温度下进行0.1〜1μm深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式