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1. 发明授权

US09691607B2 Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same 有权
公开(公告)号：US09691607B2
公开(公告)日：2017-06-27
申请号：US13639309
申请日：2011-04-07
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L21/02 , C30B25/10 , C30B29/36
CPC分类号： H01L21/02378 , C30B25/10 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661
摘要： Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

2. 发明授权

US08901570B2 Epitaxial silicon carbide single crystal substrate and process for producing the same 有权
标题翻译：外延碳化硅单晶基板及其制造方法
公开(公告)号：US08901570B2
公开(公告)日：2014-12-02
申请号：US13697211
申请日：2011-05-10
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/15 , H01L31/0312 , H01L21/02 , C30B25/02 , C30B29/36 , C30B25/18
CPC分类号： H01L21/02433 , C30B25/02 , C30B25/18 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/02573 , H01L21/0262
摘要： Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.
摘要翻译：提供了一种外延碳化硅单晶衬底，其中具有优异的掺杂密度的面内均匀性的碳化硅外延膜设置在具有在1°至6°之间的偏离角的碳化硅单晶衬底上。通过重复0.5μm以下的掺杂层和0.1μm以下的非掺杂层来生长外延膜。该原料气体中碳原子数与硅原子数之比（C / Si比）为1.5〜2.0的掺杂层形成，非掺杂层形成为C / Si比为 0.5以上但小于1.5。得到的外延碳化硅单晶衬底在具有小偏角的碳化硅单晶衬底上包括具有优异的掺杂密度的面内均匀性的高质量碳化硅外延膜。

3. 发明申请

US20130049014A1 EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：外延硅碳化物单晶基板及其制造方法
公开(公告)号：US20130049014A1
公开(公告)日：2013-02-28
申请号：US13697211
申请日：2011-05-10
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/16 , C30B25/16
CPC分类号： H01L21/02433 , C30B25/02 , C30B25/18 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/02573 , H01L21/0262
摘要： Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.
摘要翻译：提供了一种外延碳化硅单晶衬底，其中具有优异的掺杂密度的面内均匀性的碳化硅外延膜设置在具有在1°至6°之间的偏离角的碳化硅单晶衬底上。通过重复0.5μm以下的掺杂层和0.1μm以下的非掺杂层来生长外延膜。该原料气体中碳原子数与硅原子数之比（C / Si比）为1.5〜2.0的掺杂层形成，非掺杂层形成为C / Si比为 0.5以上但小于1.5。得到的外延碳化硅单晶衬底在具有小偏角的碳化硅单晶衬底上包括具有优异的掺杂密度的面内均匀性的高质量碳化硅外延膜。

4. 发明申请

US20130029158A1 PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE OBTAINED BY THE SAME 有权
标题翻译：单晶硅基碳化硅单晶及其异相碳化硅单晶基板的制造方法
公开(公告)号：US20130029158A1
公开(公告)日：2013-01-31
申请号：US13639309
申请日：2011-04-07
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： C30B25/16 , B32B9/04
CPC分类号： H01L21/02378 , C30B25/10 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661
摘要： Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.
摘要翻译：公开了通过化学气相沉积在单晶碳化硅衬底上外延生长碳化硅膜来制造外延单晶碳化硅衬底的工艺。该方法中的晶体生长步骤包括主要占据外延生长期的主晶体生长步骤和二次晶体生长步骤，其中生长温度在设定生长温度（T0）和设定生长温度（T2）分别低于和高于在主晶体生长步骤中使用的生长温度（T1）。抑制单晶碳化硅衬底的基面位错转移到外延膜。因此，形成高质量的外延膜。

5. 发明申请

US20110278596A1 Epitaxial silicon carbide monocrystalline substrate and method of production of same 审中-公开
标题翻译：外延碳化硅单晶基板及其生产方法相同
公开(公告)号：US20110278596A1
公开(公告)日：2011-11-17
申请号：US13138270
申请日：2010-01-29
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakasu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakasu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/24 , C30B25/02
CPC分类号： H01L21/02609 , C23C16/325 , C30B25/14 , C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02634
摘要： The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
摘要翻译：本发明提供一种外延SiC单晶衬底，其具有使用具有6°或更小的偏离角的衬底在外延生长中抑制发生步骤聚集的高质量外延膜的外延SiC单晶衬底及其制造方法，即外延该外延碳化硅单晶衬底由形成有碳化硅单晶薄膜的偏离角为6°以下的碳化硅单晶衬底构成，其特征在于，所述碳化硅单晶薄膜的表面具有 0.5nm以下的表面粗糙度（Ra值）及其制造方法。

6. 发明授权

US08044408B2 SiC single-crystal substrate and method of producing SiC single-crystal substrate 有权
标题翻译： SiC单晶衬底和SiC单晶衬底的制造方法
公开(公告)号：US08044408B2
公开(公告)日：2011-10-25
申请号：US12469299
申请日：2009-05-20
申请人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
发明人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
IPC分类号： H01L29/15
CPC分类号： H01L21/02378 , C30B23/00 , C30B29/36 , H01L21/02529 , H01L21/02631
摘要： The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.
摘要翻译：本发明提供一种高品质SiC单晶衬底，用于生产高质量SiC单晶衬底的晶种，以及制造高品质SiC单晶衬底的方法，其能够提高器件产量和稳定性。本发明提供一种SiC单晶基板，其中，当将SiC单晶基板分割为5mm见方的区域时，其位错对或位错列之间的位错端位置之间的间隔为5μm以下的区域存在于在基板表面处具有终点的位错占基板表面内所有这些区域的50％或更少，位错对或错位以外的位错基板中的位错密度为8,000 / cm 2。

7. 发明授权

US08927396B2 Production process of epitaxial silicon carbide single crystal substrate 有权
标题翻译：外延碳化硅单晶衬底的生产工艺
公开(公告)号：US08927396B2
公开(公告)日：2015-01-06
申请号：US13881231
申请日：2011-11-15
申请人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
IPC分类号： H01L21/20 , H01L21/02 , C30B25/18 , C30B29/36 , C30B25/02
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B25/186 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02658 , Y10S438/931
摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.
摘要翻译：本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度为0.0001〜0.0001，从而在1550〜1650℃的温度下进行0.1〜1μm深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

8. 发明申请

US20130320357A1 EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：外延硅碳化物单晶基板及其制造方法
公开(公告)号：US20130320357A1
公开(公告)日：2013-12-05
申请号：US13985810
申请日：2012-04-20
申请人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro , Wataru Ito
发明人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro , Wataru Ito
IPC分类号： H01L29/30
CPC分类号： H01L29/30 , C23C16/325 , C30B25/02 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L29/045 , H01L29/1608
摘要： Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm2 in total. Additionally, the method for producing the epitaxial silicon carbide single crystal substrate forms the epitaxial layer by using chlorosilane as a silicon-based material gas and hydrocarbon gas as a carbon-based gas, at a growth temperature of 1600° C. to 1700° C., at a C/Si ratio of 0.5 to 1.0, and at a growth rate of 1 to 3 μm/hr.
摘要翻译：本发明提供一种外延碳化硅单晶衬底，其具有在碳化硅单晶衬底上具有较少堆垛层错的高质量碳化硅单晶薄膜及其制造方法。外延碳化硅单晶衬底通过在偏离角为4°或更小的碳化硅单晶衬底上生长碳化硅外延层而制造，使得发射400至600nm波长的光的堆垛层错数通过底物上的光致发光总共小于10 / cm2。此外，外延碳化硅单晶衬底的制造方法在1600℃至1700℃的生长温度下，使用氯硅烷作为硅系材料气体和烃气体作为碳系气体，形成外延层，C / Si比为0.5〜1.0，生长速度为1〜3mum / hr。

9. 发明申请

US20130217213A1 PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE 有权
标题翻译：外壳碳化硅单晶基板的生产工艺
公开(公告)号：US20130217213A1
公开(公告)日：2013-08-22
申请号：US13881231
申请日：2011-11-15
申请人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
IPC分类号： H01L21/02
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B25/186 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02658 , Y10S438/931
摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle.According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.
摘要翻译：本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度从0.0001变为0.0001〜，从而在1550〜1650℃的温度下进行0.1〜1μm的深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

10. 发明授权

US08936680B2 Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method 有权
标题翻译：具有用于制造单晶碳化硅的槽的坩埚容器和坩埚盖，制造装置和方法
公开(公告)号：US08936680B2
公开(公告)日：2015-01-20
申请号：US13138526
申请日：2010-02-25
申请人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
发明人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
IPC分类号： C30B23/02 , C30B23/00 , C30B29/36 , H01L21/02
CPC分类号： C30B29/36 , C30B23/005 , H01L21/02378 , H01L21/02433 , H01L21/02529 , Y10T117/10
摘要： The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus.
摘要翻译：提供一种用于制造单晶碳化硅的坩埚的本发明以及能够以高产率稳定地生长结晶度良好的单晶碳化硅锭的单晶碳化硅的制造装置和制造方法是用于生产具有用于保持碳化硅原料的坩埚容器和用于附着晶种的坩埚盖的单晶碳化硅的坩埚，并且适于使坩埚容器中的碳化硅原料升华以提供碳化硅升华气体在连接到坩埚盖上的籽晶上生长晶种上的单晶碳化硅，在坩埚容器中设置用于制造单晶碳化硅的坩埚，并将具有螺纹部的坩埚盖螺纹连接在一起具有能够通过相对旋转来调节流速的升华气体排出槽或沟槽加入部分并且是配备有这种坩埚的单晶碳化硅的制造装置和利用该装置的单晶碳化硅的制造方法。

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