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1. 发明授权

US07972704B2 Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom 有权
标题翻译：单晶碳化硅锭，以及从其获得的基板和外延晶片
公开(公告)号：US07972704B2
公开(公告)日：2011-07-05
申请号：US12735405
申请日：2009-01-14
申请人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
IPC分类号： B32B9/04
CPC分类号： H01L21/0262 , C30B23/00 , C30B23/002 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0254 , H01L21/02634 , H01L21/046 , H01L21/0495 , H01L29/6606 , Y10T428/24355
摘要： The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm−3 to 6×1020 cm−3 and acceptor-type impurity at a concentration of 1×1018 cm−3 to 5.99×1020 cm−3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm−3 to 5.99×1020 cm−3, and a substrate and epitaxial wafer obtained therefrom.
摘要翻译：本发明提供能够提供低位错缺陷的优质基板的单晶碳化硅锭，以及从其获得的基板和外延晶片。是含有浓度为2×1018 cm -3〜6×1020cm-3的供体型杂质和1×1018浓度的受主型杂质的单晶碳化硅单晶碳化硅锭 cm-3〜5.99×1020cm-3，其中施主型杂质的浓度大于受主型杂质的浓度，差为1×1018cm-3〜5.99×1020cm-3，从其获得的基板和外延晶片。

2. 发明申请

US20100089311A1 Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same 审中-公开
标题翻译：由碳化硅单晶构成的晶种及使用其制造锭的方法
公开(公告)号：US20100089311A1
公开(公告)日：2010-04-15
申请号：US12653229
申请日：2009-12-10
申请人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
IPC分类号： C30B23/02
CPC分类号： C30B25/20 , C30B23/00 , C30B23/005 , C30B25/00 , C30B29/36
摘要： The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.
摘要翻译：本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向从<0001>方向到[1-100]方向从-45度以上到45度以下。通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

3. 发明授权

US09915011B2 Low resistivity single crystal silicon carbide wafer 有权
公开(公告)号：US09915011B2
公开(公告)日：2018-03-13
申请号：US12592747
申请日：2009-12-01
申请人： Tatsuo Fujimoto , Noboru Ohtani , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Tatsuo Fujimoto , Noboru Ohtani , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： B32B5/00 , C30B29/36 , C30B23/00 , C30B25/02 , C30B29/40 , C30B33/02
CPC分类号： C30B29/36 , C30B23/00 , C30B25/02 , C30B29/403 , C30B33/02 , Y10T428/24355
摘要： The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.

4. 发明授权

US08044408B2 SiC single-crystal substrate and method of producing SiC single-crystal substrate 有权
标题翻译： SiC单晶衬底和SiC单晶衬底的制造方法
公开(公告)号：US08044408B2
公开(公告)日：2011-10-25
申请号：US12469299
申请日：2009-05-20
申请人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
发明人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
IPC分类号： H01L29/15
CPC分类号： H01L21/02378 , C30B23/00 , C30B29/36 , H01L21/02529 , H01L21/02631
摘要： The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.
摘要翻译：本发明提供一种高品质SiC单晶衬底，用于生产高质量SiC单晶衬底的晶种，以及制造高品质SiC单晶衬底的方法，其能够提高器件产量和稳定性。本发明提供一种SiC单晶基板，其中，当将SiC单晶基板分割为5mm见方的区域时，其位错对或位错列之间的位错端位置之间的间隔为5μm以下的区域存在于在基板表面处具有终点的位错占基板表面内所有这些区域的50％或更少，位错对或错位以外的位错基板中的位错密度为8,000 / cm 2。

5. 发明申请

US20090205565A1 APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE 有权
标题翻译：制造单晶碳化硅的装置
公开(公告)号：US20090205565A1
公开(公告)日：2009-08-20
申请号：US12416500
申请日：2009-04-01
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
IPC分类号： C30B15/10
CPC分类号： C30B29/36 , C30B23/00 , C30B23/066 , C30B35/00 , Y10T117/1068
摘要： The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
摘要翻译：本发明提供了一种用于稳定地制造质量好的单晶碳化硅而不形成裂纹等的装置，该装置包括：至少一个用于容纳碳化硅原料粉末和晶种的坩埚; 隔热材料安装在坩埚周围; 以及用于加热坩埚的加热装置，其中坩埚的外部轮廓包括至少一个比垂直相邻区域更窄直径的区域，绝缘材料也安装在留有直径差的空间中，绝缘材料的厚度在较窄直径区域处，比垂直相邻区域处的绝缘材料大。用于制造单晶碳化硅的装置能够精确地控制坩埚内的温度梯度，从而能够制造出优质的单晶碳化硅。

6. 发明申请

US20100080956A1 Low resistivity single crystal silicon carbide wafer 有权
标题翻译：低电阻率单晶碳化硅晶圆
公开(公告)号：US20100080956A1
公开(公告)日：2010-04-01
申请号：US12592747
申请日：2009-12-01
申请人： Tatsuo Fujimoto , Noboru Ohtani , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Tatsuo Fujimoto , Noboru Ohtani , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： B32B5/00
CPC分类号： C30B29/36 , C30B23/00 , C30B25/02 , C30B29/403 , C30B33/02 , Y10T428/24355
摘要： The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.
摘要翻译：本发明提供一种用于制造具有优异特性的半导体器件的低电阻率碳化硅单晶晶片。低电阻率碳化硅单晶晶片的比体积电阻为0.001＆OHgr; cm至0.012＆OHgr。cm，90％或更大的整个晶片表面积由粗糙度（Ra）为1.0的SiC单晶表面覆盖 nm以下。

7. 发明申请

US20050160965A1 Seed crystal of silicon carbide single crystal and method for producing ingot using same 审中-公开
标题翻译：碳化硅单晶晶种及其制造方法
公开(公告)号：US20050160965A1
公开(公告)日：2005-07-28
申请号：US10509923
申请日：2003-03-31
申请人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
IPC分类号： C30B23/00 , C30B25/00 , C30B25/20 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B1/00
CPC分类号： C30B25/20 , C30B23/00 , C30B23/005 , C30B25/00 , C30B29/36
摘要： The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.
摘要翻译：本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向从<0001>方向到[1-100]方向从-45度以上到45度以下。通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

8. 发明授权

US09068277B2 Apparatus for manufacturing single-crystal silicon carbide 有权
标题翻译：单晶碳化硅制造装置
公开(公告)号：US09068277B2
公开(公告)日：2015-06-30
申请号：US12416500
申请日：2009-04-01
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
IPC分类号： C30B23/00 , C30B29/36 , C30B35/00 , C30B23/06
CPC分类号： C30B29/36 , C30B23/00 , C30B23/066 , C30B35/00 , Y10T117/1068
摘要： The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
摘要翻译：本发明提供了一种用于稳定地制造质量好的单晶碳化硅而不形成裂纹等的装置，该装置包括：至少一个用于容纳碳化硅原料粉末和晶种的坩埚; 隔热材料安装在坩埚周围; 以及用于加热坩埚的加热装置，其中坩埚的外部轮廓包括至少一个比垂直相邻区域更窄直径的区域，绝缘材料也安装在留有直径差的空间中，绝缘材料的厚度在较窄直径区域处，比垂直相邻区域处的绝缘材料大。用于制造单晶碳化硅的装置能够精确地控制坩埚内的温度梯度，从而能够制造出优质的单晶碳化硅。

9. 发明申请

US20100289033A1 SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL WAFER OBTAINED THEREFROM 有权
标题翻译：单晶硅碳化硅，基板和外延晶体管
公开(公告)号：US20100289033A1
公开(公告)日：2010-11-18
申请号：US12735405
申请日：2009-01-14
申请人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
IPC分类号： H01L29/24 , B32B5/00 , B32B3/00 , C01B31/36
CPC分类号： H01L21/0262 , C30B23/00 , C30B23/002 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0254 , H01L21/02634 , H01L21/046 , H01L21/0495 , H01L29/6606 , Y10T428/24355
摘要： The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm−3 to 6×1020 cm3 and acceptor-type impurity at a concentration of 1×1018 cm−3 to 5.99×1020 cm−3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm−3 to 5.99×1020 cm−3, and a substrate and epitaxial wafer obtained therefrom.
摘要翻译：本发明提供能够提供低位错缺陷的优质基板的单晶碳化硅锭，以及从其获得的基板和外延晶片。是含有浓度为2×1018 cm -3〜6×1020cm 3的供体型杂质的浓度为1×1018 cm -1的受主型杂质的单晶碳化硅单晶碳化硅锭， 3〜5.99×1020cm-3，其中供体型杂质的浓度大于受主型杂质的浓度，差为1×1018cm-3〜5.99×1020cm-3，基板和由其获得的外延晶片。

10. 发明申请

US20100083897A1 Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same 审中-公开
标题翻译：由碳化硅单晶制成的晶种晶体及其制造方法
公开(公告)号：US20100083897A1
公开(公告)日：2010-04-08
申请号：US12592808
申请日：2009-12-02
申请人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Tatsuo Fujimoto
IPC分类号： C30B23/02
CPC分类号： C30B25/20 , C30B23/00 , C30B23/005 , C30B25/00 , C30B29/36
摘要： The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.
摘要翻译：本发明涉及一种由适用于制造用于电力装置的基板（晶片），高频装置等的碳化硅单晶构成的晶种及其制造方法。由碳化硅单晶构成的晶种的单晶生长面以相对于（11-20）面为3度以上至60度以下的角度倾斜至倾斜角度范围的方向从<0001>方向到[1-100]方向从-45度以上到45度以下。通过使用这样的晶种进行晶体生长，可以得到高质量的碳化硅单晶锭。根据本发明，可以获得由具有很少晶体缺陷如微管缺陷和堆垛层错的质量好的碳化硅单晶组成的材料，其直径适用于实际应用。

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