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1. 发明授权

US08491719B2 Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same 有权
标题翻译：碳化硅单晶，碳化硅单晶晶片及其制造方法
公开(公告)号：US08491719B2
公开(公告)日：2013-07-23
申请号：US12455243
申请日：2009-05-29
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/00
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译：本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×1015的未补偿杂质的碳化硅单晶 / cm3以上，并且含有小于所述未补偿杂质浓度的钒，通过加工和研磨碳化硅单晶而获得的碳化硅单晶晶片，室温下的电阻率为5×10 3Ωm·m以上，生产碳化硅单晶的方法。

2. 发明申请

US20110180765A1 MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：单晶硅碳化硅，单晶硅碳化硅及其制造方法
公开(公告)号：US20110180765A1
公开(公告)日：2011-07-28
申请号：US13040783
申请日：2011-03-04
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： H01B1/04
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

3. 发明授权

US07799305B2 Silicon carbide single crystal and single crystal wafer 有权
标题翻译：碳化硅单晶和单晶晶片
公开(公告)号：US07799305B2
公开(公告)日：2010-09-21
申请号：US11629377
申请日：2005-06-15
申请人： Mitsuru Sawamura , Tatsuo Fujimoto , Noboru Ohtani , Masashi Nakabayashi
发明人： Mitsuru Sawamura , Tatsuo Fujimoto , Noboru Ohtani , Masashi Nakabayashi
IPC分类号： C30B29/36
CPC分类号： C30B23/00 , C30B29/36
摘要： The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom.According to the present invention, by having vacancy clusters including vacancy pairs, the electrical conductivity can be reduced even when the nitrogen concentration is higher than the boron concentration and, in addition, a semi-insulating SiC single crystal resistant to change of the electrical conductivity even with heat treatment can be obtained.
摘要翻译：本发明提供一种半绝缘性碳化硅单晶，其特征在于，室温下的电阻率为1×10 5Ω·cm以上，半绝缘性碳化硅单晶的特征在于，在室温下具有电阻率 1×10 5Ω·cm·cm以上以及空位对（bivacancies）和半绝缘性碳化硅单晶，其特征在于，室温下的电阻率为1×10 5Ω·cm以上，并且含有晶体区域，平均寿命在液氮沸点温度（77K）以下的位置寿命的测定以及从其获得的晶片的寿命长于155ps。根据本发明，通过具有包括空位对的空位簇，即使当氮浓度高于硼浓度时也可以降低电导率，另外还可以降低电导率的变化的半绝缘SiC单晶甚至可以获得热处理。

4. 发明申请

US20090255458A1 Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same 有权
标题翻译：碳化硅单晶，碳化硅单晶晶片及其制造方法
公开(公告)号：US20090255458A1
公开(公告)日：2009-10-15
申请号：US12455243
申请日：2009-05-29
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/00
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译：本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×10 15 / cm 3的未补偿杂质的碳化硅单晶以上，并且含有少于所述未补偿杂质浓度的钒，通过在室温下加工和研磨碳化硅单晶而获得的电阻率为5×10 3Ωcm以上的碳化硅单晶晶片，以及制造方法碳化硅单晶。

5. 发明申请

US20080038531A1 Silicon Carbide Single Crystal And Single Crystal Wafer 有权
标题翻译：碳化硅单晶和单晶硅片
公开(公告)号：US20080038531A1
公开(公告)日：2008-02-14
申请号：US11629377
申请日：2005-06-15
申请人： Mitsuru Sawamura , Tatsuo Fujimoto , Noboru Ohtani , Masashi Nakabayashi
发明人： Mitsuru Sawamura , Tatsuo Fujimoto , Noboru Ohtani , Masashi Nakabayashi
IPC分类号： C04B35/52
CPC分类号： C30B23/00 , C30B29/36
摘要： The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom. According to the present invention, by having vacancy clusters including vacancy pairs, the electrical conductivity can be reduced even when the nitrogen concentration is higher than the boron concentration and, in addition, a semi-insulating SiC single crystal resistant to change of the electrical conductivity even with heat treatment can be obtained.
摘要翻译：本发明提供一种半绝缘碳化硅单晶，其特征在于在室温下具有1×10 5Ω或更大的电阻率，以及半绝缘碳化硅单晶，其特征在于具有电阻率在室温下为1×10 5Ωm以上，空位对（双峰）和半绝缘碳化硅单晶，其特征在于室温下的电阻率为1×10 5 / >以上，并且在液氮沸点温度（77K）以下的位置寿命的测定以及从其获得的晶片的含有位置平均寿命长于155ps的寿命的晶体区域。根据本发明，通过具有包括空位对的空位簇，即使当氮浓度高于硼浓度时也可以降低电导率，另外还可以降低电导率的变化的半绝缘SiC单晶甚至可以获得热处理。

6. 发明申请

US20130092280A1 ELECTRIC RESISTANCE WELDED OIL COUNTRY TUBULAR GOODS AND MANUFACTURING METHOD OF ELECTRIC RESISTANCE WELDED OIL COUNTRY TUBULAR GOODS 有权
标题翻译：电阻焊油油国家管材及电阻焊制油国家管材的制造方法
公开(公告)号：US20130092280A1
公开(公告)日：2013-04-18
申请号：US13806688
申请日：2012-02-03
申请人： Mitsuru Sawamura , Hitoshi Asahi
发明人： Mitsuru Sawamura , Hitoshi Asahi
IPC分类号： B23K11/00 , F16L9/00
CPC分类号： B23K11/00 , B21C37/08 , B23K11/002 , B23K11/0073 , B23K2101/06 , B23K2101/10 , B23K2103/04 , C21D1/18 , C21D1/25 , C21D8/0226 , C21D8/0263 , C21D8/105 , C21D9/08 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/12 , C22C38/14 , F16L9/00 , F16L13/02
摘要： [Summary][Object] There are provided electric resistance welded oil country tubular goods having strength corresponding to API specification 5CT P110 without a heat treatment being performed on the whole steel pipe and further having excellent toughness, and a manufacturing method of an electric resistance welded oil country tubular goods.[Solution] Electric resistance welded oil country tubular goods according to the present invention have a chemical composition that contains, in mass %, C: 0.05 to 0.12%, Si: 0.03 to 0.5%, Mn: 0.80 to 2.2%, P: 0.03% or less, S: 0.003% or less, Al: 0.08% or less, Nb: 0.01% to 0.10%, Ti: 0.005 to 0.03%, B: 0.0005 to 0.0030%, and N: 0.008% or less, and in which Ti>3.4 N is satisfied, its balance is composed of Fe and inevitable impurities, and, VC90 is 15 to 40.
摘要翻译： [摘要]本发明提供具有对应于API规格5CT P110的强度的电阻焊油井筒，而在整个钢管上进行热处理，并具有优异的韧性，以及电阻焊接的制造方法石油管状物品。 [解决方案]本发明的电焊焊接油国家管状物具有以质量％计含有C：0.05〜0.12％，Si：0.03〜0.5％，Mn：0.80〜2.2％，P：0.03的化学组成％以下，S：0.003％以下，Al：0.08％以下，Nb：0.01〜0.10％，Ti：0.005〜0.03％，B：0.0005〜0.0030％，N：0.008％以下，其中Ti> 3.4N，其余量由Fe和不可避免的杂质构成，VC90为15〜40。

7. 发明授权

US08178389B2 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same 有权
标题翻译：单晶碳化硅锭，单晶碳化硅晶圆及其制造方法相同
公开(公告)号：US08178389B2
公开(公告)日：2012-05-15
申请号：US12708124
申请日：2010-02-18
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： H01L21/00
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

8. 发明申请

US20100147212A1 MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：单晶硅碳化硅，单晶硅碳化硅及其制造方法
公开(公告)号：US20100147212A1
公开(公告)日：2010-06-17
申请号：US12708124
申请日：2010-02-18
申请人： Masashi NAKABAYASHI , Tatsuo FUJIMOTO , Mitsuru SAWAMURA , Noboru OHTANI
发明人： Masashi NAKABAYASHI , Tatsuo FUJIMOTO , Mitsuru SAWAMURA , Noboru OHTANI
IPC分类号： C30B23/00
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

9. 发明申请

US20050083058A1 Superconducting magnet, process for producing the same and its magnetizing method 审中-公开
标题翻译：超导磁体，其制造方法及其磁化方法
公开(公告)号：US20050083058A1
公开(公告)日：2005-04-21
申请号：US10506206
申请日：2003-12-12
申请人： Ikuo Itoh , Hiroaki Otsuka , Mitsuru Sawamura
发明人： Ikuo Itoh , Hiroaki Otsuka , Mitsuru Sawamura
IPC分类号： H01F6/00 , H01F7/02 , H01F13/00 , H01F41/02 , G01V3/00
CPC分类号： H01F13/003 , H01F6/00 , H01F7/02 , H01F41/0253
摘要： A superconductive magnet comprised of a bulk member or sheet member of a type II superconductive material, wherein a distribution of the magnetic flux density component vertical to the surface directly above the surface of the bulk member or sheet member (a) has a maximum value at a center of said bulk member or sheet member and is about zero at its side edge, and (b) has at least one minimal value point between said center and side edge. A superconductor is cooled to not more than a critical temperature after applying a magnetic field Hex1 [A/m] near the magnetic field generation system in the normal conductive state, then the applied magnetic field is reduced to zero, then a magnetic field is applied until the applied magnetic field becomes −Hex2 [A/m] in the opposite direction to the trapped magnetic flux to make the trapped magnetic flux density Bin0 [T], then the applied magnetic field is again returned to zero, where Hex1>0 and Hex2>0.
摘要翻译：一种由II型超导材料的主体部件或片状部件组成的超导磁体，其中垂直于大块部件或片状部件（a）表面正上方的表面的磁通密度分量的分布在所述主体部件或片部件的中心在其侧边缘处约为零，并且（b）在所述中心和侧边之间具有至少一个最小值点。在正常导通状态下在磁场产生系统附近施加磁场Hex1 [A / m]后，将超导体冷却至临界温度，然后施加的磁场减小到零，然后施加磁场直到所施加的磁场与被捕获的磁通量相反的方向变为-Hex2 [A / m]，以使被捕获的磁通密度Bin0 [T]，则所施加的磁场再次返回到零，其中Hex1> 0和 Hex2> 0。

10. 发明授权

US08795624B2 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same 有权
标题翻译：单晶碳化硅锭，单晶碳化硅晶圆及其制造方法相同
公开(公告)号：US08795624B2
公开(公告)日：2014-08-05
申请号：US11663887
申请日：2005-10-05
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Mitsuru Sawamura , Noboru Ohtani
IPC分类号： C01B31/36 , H01L21/00 , B01J3/04 , H01B1/04 , H01B1/00 , H01L29/16 , H01L21/02 , C30B13/00 , C30B21/04 , C30B28/08
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译：提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

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