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1. 发明申请

US20130215298A1 IMAGE PROCESSING METHOD, IMAGE PROCESSING APPARATUS AND IMAGE CAPTURING APPARATUS 有权
标题翻译：图像处理方法，图像处理装置和图像捕获装置
公开(公告)号：US20130215298A1
公开(公告)日：2013-08-22
申请号：US13882552
申请日：2011-10-27
申请人： Takashi Kawabe , Shigeyuki Ueda
发明人： Takashi Kawabe , Shigeyuki Ueda
IPC分类号： H04N5/217
CPC分类号： H04N5/217 , G06T5/006 , H04N5/23238 , H04N5/3572
摘要： An image processing method, an image processing apparatus and an image capturing apparatus are provided, which are capable of obtaining an output image exhibiting high visual recognizability while reducing the processing time with a circuit on a comparatively small scale. Datum plane system coordinates xdydzwith a datum plane DP serving as a basis and having a fixed positional relationship with a virtual projection plane VP are set, and there is provided a two-dimensional LUT stored with zd coordinates in a direction perpendicular to the datum plane with respect to xd- and yd-coordinates on the datum plane DP and based on a shape of the virtual projection plane VP, and image data is calculated, by calculating the coordinates of the pixels on the virtual projection plane VP in the world coordinate system on the basis of the two-dimensional LUT and converting the calculated coordinates of the pixels on the virtual projection plane in the world coordinate system into a camera coordinate system by using a distortion correction coefficient of an optical system.
摘要翻译：提供了一种图像处理方法，图像处理装置和图像捕获装置，其能够以比较小规模的电路减少处理时间来获得呈现高视觉可识别性的输出图像。基准平面系统坐标xdydz与基准平面DP作为基准并且与虚拟投影平面VP具有固定的位置关系，并且提供一个与垂直于基准平面的方向以zd坐标存储的二维LUT，相对于基准平面DP上的xd和yd坐标，并且基于虚拟投影平面VP的形状，并且通过计算世界坐标系中的虚拟投影平面VP上的像素的坐标来计算图像数据二维LUT的基础，并且通过使用光学系统的失真校正系数将所计算的世界坐标系中的虚拟投影平面上的像素的坐标转换为相机坐标系。

2. 发明授权

US06635962B2 Chip on chip semiconductor device 有权
标题翻译：片上半导体器件
公开(公告)号：US06635962B2
公开(公告)日：2003-10-21
申请号：US09950058
申请日：2001-09-12
申请人： Kazutaka Shibata , Shigeyuki Ueda , Toshio Enami
发明人： Kazutaka Shibata , Shigeyuki Ueda , Toshio Enami
IPC分类号： H01L2348
CPC分类号： H01L25/0652 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05184 , H01L2224/05571 , H01L2224/05572 , H01L2224/05644 , H01L2224/16145 , H01L2224/45144 , H01L2924/01322 , H01L2924/00 , H01L2224/05139 , H01L2924/00014 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171
摘要： In the case where a plurality of second semiconductor chips (2a and 2b) are bonded to the surface side of a first semiconductor chip (1) via bump electrodes (11 and 21), an interconnection (9) for directly connecting electrode terminals (22a and 22b) of the two second semiconductor chips (2a and 2b) is formed on the surface of a passivation film (17) of the first semiconductor chip (1). As a result, a semiconductor device of a COC type in which a plurality of second semiconductor chips are mounted, while obtaining generalization of the first semiconductor chip, a signal can be transmitted/received between the second semiconductor chips without changing the design of the semiconductor device in the first semiconductor chip and a method for manufacturing the semiconductor device can be provided.
摘要翻译：在通过凸块电极（11和21）将多个第二半导体芯片（2a和2b）接合到第一半导体芯片（1）的表面侧的情况下，用于直接连接电极端子（22a）的互连和第二半导体芯片（2a和2b）的表面形成在第一半导体芯片（1）的钝化膜（17）的表面上。结果，在获得第一半导体芯片的泛化的同时，在安装了多个第二半导体芯片的COC型半导体器件中，可以在不改变半导体的设计的情况下在第二半导体芯片之间发送/接收信号可以提供第一半导体芯片中的器件和半导体器件的制造方法。

3. 发明授权

US06399419B1 Production of semiconductor device 失效
标题翻译：生产半导体器件
公开(公告)号：US06399419B1
公开(公告)日：2002-06-04
申请号：US09604747
申请日：2000-06-28
申请人： Kazutaka Shibata , Shigeyuki Ueda
发明人： Kazutaka Shibata , Shigeyuki Ueda
IPC分类号： H01L2144
CPC分类号： H01L24/81 , H01L2224/13144 , H01L2224/16 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/10329 , H01L2924/00
摘要： A method of opposing and joining a surface of a solid device and a surface of a semiconductor chip. A metal electrode portion formed in a raised state on the surface of the solid device and a metal electrode portion formed in a raised state on the surface of the semiconductor chip are directly abutted and pressed against each other. In the state, ultrasonic vibration is transmitted to the metal electrode portions which are pressed against each other, to join the metal electrode portions to each other.
摘要翻译：一种将固体器件的表面和半导体芯片的表面相对并接合的方法。在固体器件的表面上形成为升高状态的金属电极部分和在半导体芯片的表面上形成为升高状态的金属电极部分直接抵接并相互压靠。在该状态下，超声波振动被传递到彼此压靠的金属电极部分，以将金属电极部分彼此接合。

4. 发明授权

US07045900B2 Semiconductor chip and production thereof, and semiconductor device having semiconductor chip bonded to solid device 有权
标题翻译：半导体芯片及其制造方法以及具有半导体芯片的半导体器件与固态器件接合
公开(公告)号：US07045900B2
公开(公告)日：2006-05-16
申请号：US10797018
申请日：2004-03-11
申请人： Junichi Hikita , Goro Nakatani , Nobuhisa Kumamoto , Katsumi Sameshima , Kazutaka Shibata , Shigeyuki Ueda
发明人： Junichi Hikita , Goro Nakatani , Nobuhisa Kumamoto , Katsumi Sameshima , Kazutaka Shibata , Shigeyuki Ueda
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L24/81 , H01L23/49575 , H01L23/552 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/28 , H01L24/31 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/05124 , H01L2224/05166 , H01L2224/05599 , H01L2224/05644 , H01L2224/05669 , H01L2224/10135 , H01L2224/10165 , H01L2224/1147 , H01L2224/13099 , H01L2224/13144 , H01L2224/16145 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/73207 , H01L2224/81136 , H01L2224/81139 , H01L2224/81141 , H01L2224/81191 , H01L2224/81192 , H01L2224/81801 , H01L2224/85399 , H01L2225/06513 , H01L2225/06593 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01021 , H01L2924/01022 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10253 , H01L2924/10329 , H01L2924/181 , H01L2924/3011 , H01L2924/3511 , H01L2924/01031 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/013
摘要： A semiconductor chip having a functional bump provided on a surface of a semiconductor substrate thereof for electrical connection between an internal circuit thereof and a solid device, and a dummy bump not serving for the electrical connection between the internal circuit and the solid device. The dummy bump may be a stress relieving bump for relieving stresses exerted thereon. The dummy bump may be connected to a low impedance portion. The functional bump and the dummy bump may be provided on a surface protective film. In this case, the dummy bump is provided on a recess formed in the surface protective film.
摘要翻译：具有设置在其半导体衬底的表面上的用于在其内部电路和固体器件之间进行电连接的功能性凸块的半导体芯片和不用于内部电路和固体器件之间的电连接的虚拟凸起。虚拟凸块可以是用于减轻施加在其上的应力的应力消除凸块。虚拟凸块可以连接到低阻抗部分。可以在表面保护膜上设置功能性凸块和虚设凸块。在这种情况下，在形成在表面保护膜上的凹部上设置虚拟凸块。

5. 发明授权

US07009294B2 Production process for semiconductor device 失效
标题翻译：半导体器件的生产工艺
公开(公告)号：US07009294B2
公开(公告)日：2006-03-07
申请号：US10748327
申请日：2003-12-31
申请人： Junichi Hikita , Kazutaka Shibata , Shigeyuki Ueda
发明人： Junichi Hikita , Kazutaka Shibata , Shigeyuki Ueda
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L21/6835 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/11003 , H01L2224/11334 , H01L2224/1147 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10329 , H01L2924/19043 , H01L2224/05666 , H01L2924/00014 , H01L2224/05684 , H01L2224/05124
摘要： A production process for a semiconductor device having a metal electrode on a semiconductor substrate thereof. A metal electrode portion is formed on a surface of another substrate for electrode transfer. Then, the metal electrode portion is transferred from the electrode transfer substrate onto the semiconductor substrate by pressing together the electrode transfer substrate and the semiconductor substrate. The electrode transfer substrate has, for example, a seed film provided on the surface thereof, and the formation of the metal electrode portion on the electrode transfer substrate may be achieved by depositing a material for the metal electrode on the seed film by plating. The electrode transfer substrate may have an insulating film which covers a surface of the seed film except a portion thereof on which the metal electrode portion is to be formed.
摘要翻译：一种在其半导体衬底上具有金属电极的半导体器件的制造方法。金属电极部分形成在用于电极转移的另一基板的表面上。然后，通过将电极转移衬底和半导体衬底压在一起，将金属电极部分从电极转移衬底转移到半导体衬底上。电极转移基板具有例如设置在其表面上的种子膜，并且可以通过电镀在种子膜上沉积金属电极材料来实现电极转移基板上的金属电极部分的形成。电极转移基板可以具有覆盖除了要形成金属电极部分的部分之外的种子膜的表面的绝缘膜。

6. 发明授权

US06744140B1 Semiconductor chip and method of producing the same 有权
公开(公告)号：US06744140B1
公开(公告)日：2004-06-01
申请号：US09665663
申请日：2000-09-20
申请人： Shigeyuki Ueda
发明人： Shigeyuki Ueda
IPC分类号： H01L2328
CPC分类号： H01L24/03 , H01L24/10 , H01L24/13 , H01L24/45 , H01L2224/0401 , H01L2224/04073 , H01L2224/05639 , H01L2224/05644 , H01L2224/05669 , H01L2224/05678 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/13164 , H01L2224/13169 , H01L2224/16145 , H01L2224/45144 , H01L2224/48247 , H01L2224/48639 , H01L2224/48644 , H01L2224/48669 , H01L2224/73207 , H01L2924/01013 , H01L2924/01014 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/10253 , H01L2924/10329 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2224/48678 , H01L2924/00012
摘要： A semiconductor chip which is to be overlapped with and joined to a surface of another solid device. The semiconductor chip has a surface protective film for covering internal wiring, an external connection pad which is formed by partially exposing the internal wiring from the surface protective film, and a wire connecting portion which is formed using a metal material having oxidation resistance on the external connection pad and to which a wire for electrical connection to an external terminal is connected. It is preferable that the semiconductor chip further has an internal connection pad used for connection to the solid device and a bump formed on the pad.

7. 发明授权

US06724084B1 Semiconductor chip and production thereof, and semiconductor device having semiconductor chip bonded to solid device 有权
公开(公告)号：US06724084B1
公开(公告)日：2004-04-20
申请号：US09499384
申请日：2000-02-07
申请人： Junichi Hikita , Goro Nakatani , Nobuhisa Kumamoto , Katsumi Sameshima , Kazutaka Shibata , Shigeyuki Ueda
发明人： Junichi Hikita , Goro Nakatani , Nobuhisa Kumamoto , Katsumi Sameshima , Kazutaka Shibata , Shigeyuki Ueda
IPC分类号： H01L2348
CPC分类号： H01L24/81 , H01L23/49575 , H01L23/552 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/28 , H01L24/31 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/05124 , H01L2224/05166 , H01L2224/05599 , H01L2224/05644 , H01L2224/05669 , H01L2224/10135 , H01L2224/10165 , H01L2224/1147 , H01L2224/13099 , H01L2224/13144 , H01L2224/16145 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/73207 , H01L2224/81136 , H01L2224/81139 , H01L2224/81141 , H01L2224/81191 , H01L2224/81192 , H01L2224/81801 , H01L2224/85399 , H01L2225/06513 , H01L2225/06593 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01021 , H01L2924/01022 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10253 , H01L2924/10329 , H01L2924/181 , H01L2924/3011 , H01L2924/3511 , H01L2924/01031 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/013
摘要： A semiconductor chip having a functional bump provided on a surface of a semiconductor substrate thereof for electrical connection between an internal circuit thereof and a solid device, and a dummy bump not serving for the electrical connection between the internal circuit and the solid device. The dummy bump may be a stress relieving bump for relieving stresses exerted thereon. The dummy bump may be connected to a low impedance portion. The functional bump and the dummy bump may be provided on a surface protective film. In this case, the dummy bump is provided on a recess formed in the surface protective film.

8. 发明授权

US06696347B1 Production process for semiconductor device 失效
公开(公告)号：US06696347B1
公开(公告)日：2004-02-24
申请号：US09511800
申请日：2000-02-23
申请人： Junichi Hikita , Kazutaka Shibata , Shigeyuki Ueda
发明人： Junichi Hikita , Kazutaka Shibata , Shigeyuki Ueda
IPC分类号： H01L2176
CPC分类号： H01L24/11 , H01L21/6835 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/11003 , H01L2224/11334 , H01L2224/1147 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10329 , H01L2924/19043 , H01L2224/05666 , H01L2924/00014 , H01L2224/05684 , H01L2224/05124
摘要： A production process for a semiconductor device having a metal electrode on a semiconductor substrate thereof. A metal electrode portion is formed on a surface of another substrate for electrode transfer. Then, the metal electrode portion is transferred from the electrode transfer substrate onto the semiconductor substrate by pressing together the electrode transfer substrate and the semiconductor substrate. The electrode transfer substrate has, for example, a seed film provided on the surface thereof, and the formation of the metal electrode portion on the electrode transfer substrate may be achieved by depositing a material for the metal electrode on the seed film by plating. The electrode transfer substrate may have an insulating film which covers a surface of the seed film except a portion thereof on which the metal electrode portion is to be formed.

9. 发明授权

US06391685B1 Method of forming through-holes in a wafer and then dicing to form stacked semiconductor devices 有权
标题翻译：在晶片中形成通孔然后切割以形成堆叠的半导体器件的方法
公开(公告)号：US06391685B1
公开(公告)日：2002-05-21
申请号：US09511106
申请日：2000-02-23
申请人： Junichi Hikita , Kazutaka Shibata , Shigeyuki Ueda
发明人： Junichi Hikita , Kazutaka Shibata , Shigeyuki Ueda
IPC分类号： H01L2144
CPC分类号： H01J9/142 , H01J9/146 , H01J29/076 , H01L21/76898 , H01L23/481 , H01L24/02 , H01L25/0657 , H01L25/50 , H01L2224/04042 , H01L2225/06513 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , H01L2924/19041 , H01L2924/19043
摘要： A semiconductor chip in which a through hole penetrating through its surface and reverse surface is formed in a scribe line region in the vicinity of an active region where a functional device is formed, and a conductive member is arranged in the through portion. The through portion may be a groove opening sideward on a sidewall surface of the semiconductor chip. The through portion may be a through hole blocked from a side part of the semiconductor chip. The semiconductor chip further includes wiring for electrically connecting an internal circuit formed in the active region and the conductive member to each other.
摘要翻译：在形成有功能元件的有源区域附近的划线区域形成贯通其表面和反面的通孔的半导体芯片，并且在贯通部配置导电部件。贯通部分可以是在半导体芯片的侧壁表面上的侧向槽的开口。贯通部分可以是从半导体芯片的侧部阻挡的通孔。半导体芯片还包括用于将形成在有源区域中的内部电路和导电构件彼此电连接的布线。

10. 发明授权

US08436467B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08436467B2
公开(公告)日：2013-05-07
申请号：US12663563
申请日：2008-06-13
申请人： Tadahiro Morifuji , Shigeyuki Ueda
发明人： Tadahiro Morifuji , Shigeyuki Ueda
IPC分类号： H01L23/48
CPC分类号： H01L24/13 , H01L23/3128 , H01L23/3171 , H01L23/3192 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05014 , H01L2224/05027 , H01L2224/05541 , H01L2224/05555 , H01L2224/05557 , H01L2224/05561 , H01L2224/05583 , H01L2224/0569 , H01L2224/10122 , H01L2224/1147 , H01L2224/11902 , H01L2224/13006 , H01L2224/13023 , H01L2224/1308 , H01L2224/13099 , H01L2224/1356 , H01L2224/16 , H01L2224/8121 , H01L2224/81815 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2924/3512 , H01L2924/207 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion formed on the upper surface of a semiconductor substrate, a passivation layer so formed on the upper surface of the semiconductor substrate as to overlap a part of the electrode pad portion and having a first opening portion where the upper surface of the electrode pad portion is exposed, a barrier metal layer formed on the electrode pad portion, and a solder bump formed on the barrier metal layer. The barrier metal layer is formed such that an outer peripheral end lies within the first opening portion of the passivation layer when viewed in plan.
摘要翻译：公开了抑制可靠性降低的半导体器件。半导体器件包括形成在半导体衬底的上表面上的电极焊盘部分，钝化层，其形成在半导体衬底的上表面上，以与电极焊盘部分的一部分重叠，并具有第一开口部分，露出电极焊盘部分的表面，形成在电极焊盘部分上的阻挡金属层和形成在阻挡金属层上的焊料凸块。阻挡金属层形成为当在平面图中观察时外周端位于钝化层的第一开口部分内。

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