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1. 发明专利

BRPI0307155A8 plantas transgênicas expressando proteínas modificadas por civps ou inteínas e método relativo 未知
公开(公告)号：BRPI0307155A8
公开(公告)日：2018-04-24
申请号：BRPI0307155
申请日：2003-01-07
申请人： R MICHAEL RAAB
发明人： R MICHAEL RAAB
IPC分类号： A01H4/00 , A61K38/00 , A61K39/00 , A61P37/00 , C12N15/11 , C12N15/82
摘要： plantas transgênicas expressando proteínas modificadas por civps ou inteínas e método relativo. o presente invento se refere a plantas transgênicas que expressam proteínas modificadas por civps ou inteína,composições de matéria que as contenham, produtos de diversas aplicações feitos a partir das plantas transgênicas, métodos para construir as plantas transgênicas contendo os genes modificados por civps ou inteína, métodos para expressar proteínas modificadas por civps ou inteínas em plantas, e métodos de uso de plantas transgênicas.

2. 发明申请

US20130203125A1 CELLULOSIC PROCESSING TRAIT DEVELOPMENT USING A THERMOREGULATED, INTEIN-MODIFIED XYLANASE 有权
标题翻译：使用加热改性的XYLANASE进行的细胞处理过程开发
公开(公告)号：US20130203125A1
公开(公告)日：2013-08-08
申请号：US13818928
申请日：2011-08-23
申请人： Binzhang Shen , James Apgar , Oleg Bougri , R. Michael Raab
发明人： Binzhang Shen , James Apgar , Oleg Bougri , R. Michael Raab
IPC分类号： C12N15/82 , C12N9/24 , C12P19/14
CPC分类号： C12N15/8243 , C12N9/248 , C12N9/2482 , C12N15/8216 , C12N15/8246 , C12P19/14 , C12Y302/01008
摘要： In planta consolidated bioprocessing has the advantages of decreasing biomass pretreatment costs, utilizing excess plant protein production capacity for enzyme production, and decreasing mass transfer resistance of enzyme diffusion to its substrate. However, in planta expression of cell wall degrading (CWD) enzymes often leads to detrimental plant phenotypes that impact crop yield. To provide in planta CWD enzyme activity without any adverse phenotype, a thermostable xylanase, XynB (EC 3.2.1.8), was engineered with a thermoregulated intein, Tth-HB27 DnaE-1 (Tth intein), that controls its hydrolytic activity through conditional intein splicing. Maize plants expressing the heat inducible Tth intein-modified XynB developed normally, yet possessed enhanced post harvest glucose production from dried corn stover. Expression of CWD enzymes as dormant, intein-modified proteins that can be activated by heat treatment after harvest provides the basis for developing a novel cellulosic processing trait in plants.
摘要翻译：在植物中，综合生物处理具有降低生物量预处理成本，利用植物蛋白生产过剩的酶生产能力，降低酶扩散对其底物的传质阻力的优点。然而，在植物表达的细胞壁降解（CWD）酶通常导致有害的植物表型影响作物产量。为了在没有任何不良表型的情况下提供植物CWD酶活性，用热调节的内含肽Tth-HB27DnaE-1（第T个内含肽）设计热稳定的木聚糖酶XynB（EC 3.2.1.8），其通过条件内含肽来控制其水解活性拼接。表达热诱导性Tth内蛋白修饰的XynB的玉米植物正常发育，但是从干燥的玉米秸秆中获得增强的后收获葡萄糖产量。 CWD酶作为休眠后的内含肽修饰蛋白质的表达，可以在收获后通过热处理活化，为开发植物中新型纤维素加工性状提供依据。

3. 发明授权

US08420387B2 Intein-modified enzymes, their production and industrial applications 有权
标题翻译：内因酶修饰酶，其生产和工业应用
公开(公告)号：US08420387B2
公开(公告)日：2013-04-16
申请号：US12590444
申请日：2009-11-06
申请人： Binzhang Shen , Gabor Lazar , Humberto de la Vega , James Apgar , Philip Lessard , R. Michael Raab
发明人： Binzhang Shen , Gabor Lazar , Humberto de la Vega , James Apgar , Philip Lessard , R. Michael Raab
IPC分类号： C12N15/09 , C12N9/00 , C12N15/00 , C12N15/52 , C12N15/63
CPC分类号： C12N9/2482 , C12N9/2437 , C12N9/248 , C12N15/8216 , C12N15/8241 , C12N15/8246 , C12Y302/01004 , C12Y302/01008
摘要： A method of predicting an intein insertion site in a protein that will lead to a switching phenotype is provided. The method includes identifying a plurality of C/T/S sites within the protein; selecting from the plurality of C/T/S/ sites those that are ranked 0.75 or higher by a support vector machine, within ten angstroms of the active site of the protein, and at or near a loop-β-sheet junction or a loop-α-helix junction. A method of controlling protein activity and hosts including proteins with controlled activity are also provided. Also, intein modified proteins and plants containing intein modified proteins are provided.
摘要翻译：提供了一种预测蛋白质中的内含肽插入位点将导致切换表型的方法。该方法包括鉴定蛋白内的多个C / T / S位点; 从多个C / T / S /位点中选择由支持向量机排列为0.75或更高的那些，在蛋白质的活性位点的10埃内，以及在环 - 环α螺旋结。还提供了控制蛋白质活性的方法和包含具有受控活性的蛋白质的宿主。此外，提供了内含肽修饰的蛋白质和含有内含肽修饰的蛋白质的植物。

4. 发明申请

US20130071884A1 PLANTS EXPRESSING CELL WALL DEGRADING ENZYMES AND EXPRESSION VECTORS 审中-公开
标题翻译：植物表达细胞壁降解酶和表达载体
公开(公告)号：US20130071884A1
公开(公告)日：2013-03-21
申请号：US13508280
申请日：2010-11-05
申请人： R. Michael Raab , Vlad Samoylov , Oleg Bougri , Nathan Ekborg
发明人： R. Michael Raab , Vlad Samoylov , Oleg Bougri , Nathan Ekborg
IPC分类号： A01H5/00 , C12P19/14 , C12N15/82
CPC分类号： C12P19/14 , C12N9/2437 , C12N9/248 , C12N15/8216 , C12N15/8245 , C12N15/8246 , C12N15/8257 , C12N15/8261 , C12N15/8287 , C12P19/02 , C12Y302/01 , C12Y302/01004 , C12Y302/01008 , Y02A40/146
摘要： Vectors for expression of proteins in plants are described. The proteins may be enzymes and the enzymes can be but are not limited to cell wall degrading enzymes. A number of plants designed to express specific cell wall degrading enzymes are provided. The plants may have industrial and/or agricultural applications. Methods and materials for making the expression vectors and for making the plants are provided. Processes for which the plants could be used in industrial and agricultural applications are also provided.
摘要翻译：描述了用于在植物中表达蛋白质的载体。蛋白质可以是酶，酶可以但不限于细胞壁降解酶。提供了许多旨在表达特定细胞壁降解酶的植物。这些植物可能具有工业和/或农业应用。提供用于制备表达载体和制备植物的方法和材料。还提供了可在工业和农业应用中使用植物的方法。

5. 发明申请

US20080115243A1 Transgenic Plants Expressing Intein Modified Proteins and Associated Processes for Bio-Pharmaceutical Production 审中-公开
标题翻译：转基因植物表达用于生物药物生产的蛋白质修饰蛋白和相关过程
公开(公告)号：US20080115243A1
公开(公告)日：2008-05-15
申请号：US11596821
申请日：2005-05-19
申请人： R. Michael Raab , Kyle L. Jensen , Karl Ruping
发明人： R. Michael Raab , Kyle L. Jensen , Karl Ruping
IPC分类号： C12N15/87 , A01H1/00 , C12P21/04 , C12N5/00
CPC分类号： C12N15/8257 , C07K14/505 , C07K14/61 , C12N15/8216
摘要： Transgenic plants that express CIVPS or intein modified therapeutic proteins, compositions of matter comprising them, therapeutic proteins made from the transgenic plants, methods to construct the transgenic plants containing CIVPS or intein modified therapeutic genes, methods to express CIVPS or intein modified therapeutic proteins in plants, and methods of using the transgenic plants.
摘要翻译：表达CIVPS或内含肽修饰的治疗蛋白质的转基因植物，包含它们的物质组合物，由转基因植物制备的治疗性蛋白质，构建含有CIVPS或内含肽修饰的治疗基因的转基因植物的方法，在植物中表达CIVPS或内含肽修饰的治疗蛋白质的方法，以及使用转基因植物的方法。

6. 发明授权

US07316975B2 Method of forming sidewall spacers 有权
标题翻译：形成侧墙的方法
公开(公告)号：US07316975B2
公开(公告)日：2008-01-08
申请号：US11177216
申请日：2005-07-08
申请人： Markus Lenski , Wolfgang Buchholtz , Andy Wei , Michael Raab
发明人： Markus Lenski , Wolfgang Buchholtz , Andy Wei , Michael Raab
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/823468
摘要： A substrate comprising a first transistor element and a second transistor element is provided. A layer of a material is deposited over the first transistor element and the second transistor element. A portion of the layer of material is modified, which may be done, e.g., by irradiating the portion with ions or performing an isotropic etching process to reduce its thickness. An etching process adapted to remove the modified portion of the layer of material more quickly than an unmodified portion of the layer located over the second transistor element is performed.
摘要翻译：提供了包括第一晶体管元件和第二晶体管元件的衬底。一层材料沉积在第一晶体管元件和第二晶体管元件上。材料层的一部分被修饰，其可以例如通过用离子照射部分或执行各向同性蚀刻工艺来实现，以减小其厚度。执行适于比位于第二晶体管元件上方的层的未修改部分更快地去除材料层的修饰部分的蚀刻工艺。

7. 发明申请

US20060131699A1 Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a buried insulating layer 审中-公开
标题翻译：用于形成具有位于掩埋绝缘层上方的具有不同特性的晶体半导体区域的衬底的技术
公开(公告)号：US20060131699A1
公开(公告)日：2006-06-22
申请号：US11185391
申请日：2005-07-20
申请人： Michael Raab , Andy Wei , Manfred Horstmann
发明人： Michael Raab , Andy Wei , Manfred Horstmann
IPC分类号： H01L29/04
CPC分类号： H01L29/7842 , H01L21/76243 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/1203 , H01L27/1207
摘要： By using an implantation technique for forming a buried insulation layer, an SOI-type configuration may be achieved for hybrid orientation substrates, thereby significantly enhancing the further fabrication processes in forming circuit elements on differently oriented semiconductor regions. Consequently, process complexity for methodology and production steps is significantly reduced compared to fabrication processes based on conventional hybrid orientation substrates.
摘要翻译：通过使用用于形成掩埋绝缘层的注入技术，可以实现用于混合取向基板的SOI型结构，从而显着增强在不同取向半导体区域上形成电路元件的进一步的制造工艺。因此，与基于常规混合取向衬底的制造工艺相比，方法学和生产步骤的工艺复杂性显着降低。

8. 发明申请

US20060042726A1 Non-chrome passivation of steel 审中-公开
公开(公告)号：US20060042726A1
公开(公告)日：2006-03-02
申请号：US10933014
申请日：2004-09-02
申请人： Andrea Keys , Jeffrey Melzer , Michael Raab
发明人： Andrea Keys , Jeffrey Melzer , Michael Raab
IPC分类号： C23C22/00
CPC分类号： C23C22/361 , C09D119/02 , C09D121/02 , C23C22/83
摘要： Chromate free treatments and compositions for applying a conversion or passivation coating to metal surfaces. Preferred compositions comprise a film forming latex polymer, fluoacid, phosphoric acid, and a polyoxyethylene/oxypropylene block copolymer. The requisite metal surfaces are contacted by the compositions and dried. Rinsing is optional.

9. 发明授权

US06593197B2 Sidewall spacer based fet alignment technology 有权
公开(公告)号：US06593197B2
公开(公告)日：2003-07-15
申请号：US09811733
申请日：2001-03-19
申请人： Karsten Wieczorek , Manfred Horstmann , Rolf Stephan , Michael Raab
发明人： Karsten Wieczorek , Manfred Horstmann , Rolf Stephan , Michael Raab
IPC分类号： H01L21336
CPC分类号： H01L29/6659
摘要： This invention provides methods of forming a field-effect transistor in an integrated circuit using self-aligning technology on the basis of a sidewall spacer masking procedure, both for defining the device isolation features and the source and drain regions. The active region is defined after patterning the gate electrode by means of deposition and etch processes instead of overlay alignment technique. Thus, the present invention enables an increase of the integration density of semiconductor devices, a minimization of the parasitic capacitances in field-effect transistor devices, and a quicker manufacturing process.

10. 发明授权

US06268257B1 Method of forming a transistor having a low-resistance gate electrode 有权
标题翻译：形成具有低电阻栅电极的晶体管的方法
公开(公告)号：US06268257B1
公开(公告)日：2001-07-31
申请号：US09557714
申请日：2000-04-25
申请人： Karsten Wieczorek , Michael Raab , Rolf Stephan
发明人： Karsten Wieczorek , Michael Raab , Rolf Stephan
IPC分类号： H01L21336
CPC分类号： H01L29/66507 , H01L21/28247 , H01L29/6659
摘要： A method is disclosed in which a low-resistance portion of the gate electrode of a transistor is formed independently of the formation of low-resistance portions in the drain and source regions. Accordingly, the device features a thick low-resistance portion in the gate electrode, for example, a thick gate silicide for supporting low gate delays by minimizing the gate resistance, and a thin low-resistance portion in the drain and source in order to meet the requirements for shallow junction integration. Moreover, a transistor is disclosed having a low-resistance gate electrode portion, the composition of which is different from the low-resistance portion of the drain and source.
摘要翻译：公开了一种方法，其中晶体管的栅电极的低电阻部分形成为独立于在漏极和源极区域中形成低电阻部分。因此，该器件在栅电极中具有厚的低电阻部分，例如，通过最小化栅极电阻来支持低栅极延迟的厚栅极硅化物，以及漏极和源极中的薄的低电阻部分，以便满足浅结合整合的要求。此外，公开了一种具有低电阻栅极电极部分的晶体管，其组成不同于漏极和源极的低电阻部分。

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