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1. 发明授权

US08343619B2 Optical waveguide film 有权
标题翻译：光波导膜
公开(公告)号：US08343619B2
公开(公告)日：2013-01-01
申请号：US12440886
申请日：2007-09-12
申请人： Wataru Gouda , Shunichi Osada , Masatoshi Oyama
发明人： Wataru Gouda , Shunichi Osada , Masatoshi Oyama
IPC分类号： B32B7/02 , G02B6/10
CPC分类号： G02B6/1221 , G02B6/02042 , G02B6/10 , Y10T428/2495
摘要： An optical waveguide film is provided having a cross-sectional structure wherein claddings composed of a thermoplastic resin B and dispersions (cores) composed of a thermoplastic resin A extend in the machine direction of the film and are arrayed in the transverse direction of the film, the optical waveguide film comprising not less than 3 cores, diameters (We1, We2) of cores located at the both ends in the transverse direction of the film and diameter (Wc) of a core in the central portion in the transverse direction of the film satisfying the following Formulae (1) and (2), the optical waveguide film comprising a continuous cladding layer at at least one side thereof, the thicknesses of the cladding layers (Te1, Te2) at the both ends thereof in the transverse direction of the film and the thickness (Tc) of the cladding layer in the central portion in the transverse direction of the film satisfying the following Formulae (3) and (4): 0.8≦We1/Wc≦1.2 Formula (1) 0.8≦We2/Wc≦1.2 Formula (2) 0.8≦Te1/Tc≦1.2 Formula (3) 0.8≦Te2/Tc≦1.2 Formula (4).
摘要翻译：提供一种光波导膜，其具有横截面结构，其中由热塑性树脂B构成的包层和由热塑性树脂A组成的分散体（芯）沿膜的纵向延伸并沿膜的横向排列，包括不小于3个芯的光波导膜，位于膜的横向两端的芯的直径（We1，We2）和膜的横向方向上的中心部分的芯的直径（Wc）满足以下公式（1）和（2）的光波导膜，其至少在其一侧包括连续包覆层，其两端的厚度在其两端的宽度方向上的厚度膜和在满足以下公式（3）和（4）的膜的中心部分中的包层的厚度（Tc）：0.8＆nlE; We1 / Wc＆nlE; 1.2式（1）0.8＆nlE; We2 / （2）0.8＆nlE; Te1 / Tc＆nlE; 1.2式（3）0.8＆nlE; Te2 / Tc＆nlE; 1.2式（4）。

2. 发明申请

US20100297849A1 PLASMA ETCHING METHOD FOR ETCHING AN OBJECT 审中-公开
标题翻译：用于蚀刻对象的等离子体蚀刻方法
公开(公告)号：US20100297849A1
公开(公告)日：2010-11-25
申请号：US12512084
申请日：2009-07-30
申请人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
发明人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01L21/31144
摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.
摘要翻译：本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。

3. 发明申请

US20060000804A1 Specimen surface processing apparatus and surface processing method 失效
标题翻译：试样表面处理装置及表面处理方法
公开(公告)号：US20060000804A1
公开(公告)日：2006-01-05
申请号：US11224967
申请日：2005-09-14
申请人： Masatoshi Oyama , Yoshiyuki Ohta , Tsuyoshi Yoshida , Hironobu Kawahara
发明人： Masatoshi Oyama , Yoshiyuki Ohta , Tsuyoshi Yoshida , Hironobu Kawahara
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01J37/32935 , H01J37/3299 , H01L21/31138 , H01L21/76802 , Y10S438/905 , Y10S438/907
摘要： For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.
摘要翻译：对于使用等离子体的表面处理装置，使用含氟气体和氧气的混合气体作为灰化气体。引入氧气和含氟气体的混合气体作为灰化气体。这允许同时执行以下步骤：去除掩模材料表面上残留的硅成分和包括固化掩模层等的区域中的掩模材料; 以及沉积在真空室的内壁上的碳基和硅基沉积物的去除。此外，在低压下进行掩模材料的除去，在随后的工序中，使用含氟气体和氧气的混合气体的工序，仅使用氧气的等离子体。结果，可以减少蚀刻后对膜层的损伤（蚀刻）。

4. 发明申请

US20110171833A1 DRY ETCHING METHOD OF HIGH-K FILM 审中-公开
标题翻译：高K膜的干蚀刻方法
公开(公告)号：US20110171833A1
公开(公告)日：2011-07-14
申请号：US13072904
申请日：2011-03-28
申请人： Koichi NAKAUNE , Masatoshi OYAMA , Motohiro TANAKA , Hitoshi TAMURA , Masamichi SAKAGUCHI
发明人： Koichi NAKAUNE , Masatoshi OYAMA , Motohiro TANAKA , Hitoshi TAMURA , Masamichi SAKAGUCHI
IPC分类号： H01L21/302
CPC分类号： H01L21/31122
摘要： An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.
摘要翻译：本发明的目的是提供一种具有蚀刻特性的金属氧化物High-k膜的干蚀刻方法，其具有小的蚀刻速率差异以及开放区域和致密区域之间的微小差异，同时保持对多晶硅的高选择性电影。在使用等离子体干法蚀刻High-k膜的方法中，将少量碳含量高的碳氟化合物气体加入到与稀有气体混合的BCl 3气体中。

5. 发明申请

US20090252940A1 OPTICAL WAVEGUIDE FILM 有权
标题翻译：光学波片
公开(公告)号：US20090252940A1
公开(公告)日：2009-10-08
申请号：US12440886
申请日：2007-09-12
申请人： Wataru Gouda , Shunichi Osada , Masatoshi Oyama
发明人： Wataru Gouda , Shunichi Osada , Masatoshi Oyama
IPC分类号： B32B7/02 , B29C47/14 , B29C47/00
CPC分类号： G02B6/1221 , G02B6/02042 , G02B6/10 , Y10T428/2495
摘要： An optical waveguide film is provided having a cross-sectional structure wherein claddings composed of a thermoplastic resin B and dispersions (cores) composed of a thermoplastic resin A extend in the machine direction of the film and are arrayed in the transverse direction of the film, the optical waveguide film comprising not less than 3 cores, diameters (We1, We2) of cores located at the both ends in the transverse direction of the film and diameter (Wc) of a core in the central portion in the transverse direction of the film satisfying the following Formulae (1) and (2), the optical waveguide film comprising a continuous cladding layer at least one side thereof, the thicknesses of the cladding layers (Te1, Te2) at the both ends thereof in the transverse direction of the film and the thickness (Tc) of the cladding layer in the central portion in the transverse direction of the film satisfying the following Formulae (3) and (4): 0.8≦We1/Wc≦1.2 Formula (1) 0.8≦We2/Wc≦1.2 Formula (2) 0.8≦Te1/Tc≦1.2 Formula (3) 0.8≦Te2/Tc≦1.2 Formula (4).
摘要翻译：提供一种光波导膜，其具有横截面结构，其中由热塑性树脂B构成的包层和由热塑性树脂A组成的分散体（芯）沿膜的纵向延伸并沿膜的横向排列，包括不小于3个芯的光波导膜，位于膜的横向两端的芯的直径（We1，We2）和膜的横向方向上的中心部分的芯的直径（Wc）满足以下公式（1）和（2）的光波导膜，其至少包括一个连续包层的光波导膜，膜的横向两端的包覆层（Te1，Te2）的厚度以及满足下式（3）和（4）的膜的横向中心部分中包层的厚度（Tc）：0.8 <= We1 / Wc 0.8 <= We2 / Wc 0.8 <= Te1 / Tc 0.8 <= Te2 / Tc

6. 发明申请

US20090065479A1 DRY ETCHING METHOD OF HIGH-K FILM 审中-公开
标题翻译：高K膜的干蚀刻方法
公开(公告)号：US20090065479A1
公开(公告)日：2009-03-12
申请号：US12016434
申请日：2008-01-18
申请人： Koichi NAKAUNE , Masatoshi Oyama , Motohiro Tanaka , Hitoshi Tamura , Masamichi Sakaguchi
发明人： Koichi NAKAUNE , Masatoshi Oyama , Motohiro Tanaka , Hitoshi Tamura , Masamichi Sakaguchi
IPC分类号： C23F1/00
CPC分类号： H01L21/31122
摘要： An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.
摘要翻译：本发明的目的是提供一种具有蚀刻特性的金属氧化物High-k膜的干蚀刻方法，其具有小的蚀刻速率差异以及开放区域和致密区域之间的微小差异，同时保持对多晶硅潜在的高选择性电影。在使用等离子体干法蚀刻High-k膜的方法中，将少量碳含量高的碳氟化合物气体加入到与稀有气体混合的BCl 3气体中。

7. 发明申请

US20080085605A1 DRY ETCHING METHOD OF INSULATING FILM 失效
标题翻译：绝缘膜干蚀刻方法
公开(公告)号：US20080085605A1
公开(公告)日：2008-04-10
申请号：US11668057
申请日：2007-01-29
申请人： Nobuyuki Negishi , Masatoshi Oyama , Masahiro Sumiya
发明人： Nobuyuki Negishi , Masatoshi Oyama , Masahiro Sumiya
IPC分类号： H01L21/461
CPC分类号： H01L21/76816 , H01L21/31116 , H01L21/31144 , H01L28/40
摘要： It is an object to provide a high-precision method for forming deep holes of elliptic pattern, which can improve hole directionality on the short diameter side, the hole directionality being possibly deteriorated as a result of excessive polymer deposition in the initial etching stage. The insulating film dry etching method is for treating a work on which a mask of elliptic pattern is formed with a fluorocarbon gas, wherein the etching process is divided into a first and second steps after the etching is started, the first step operating to deposit a polymer at a rate set lower than that in the second step, and controlling step time in accordance with ellipticity (long diameter/short diameter ratio) of the elliptic pattern.
摘要翻译：本发明的目的是提供一种用于形成椭圆形深孔的高精度方法，其可以改善短径侧的孔方向性，由于在初始蚀刻阶段中聚合物沉积过多，孔方向性可能劣化。绝缘膜干式蚀刻方法是用碳氟化合物气体处理形成有椭圆图案掩模的工件，其中蚀刻工序在蚀刻开始后分为第一步骤和第二步骤，第一步操作以沉积聚合物，其速度设定为低于第二步骤，并且根据椭圆图案的椭圆率（长径/短径比）控制步骤时间。

8. 发明授权

US07354525B2 Specimen surface processing apparatus and surface processing method 失效
标题翻译：试样表面处理装置及表面处理方法
公开(公告)号：US07354525B2
公开(公告)日：2008-04-08
申请号：US11224967
申请日：2005-09-14
申请人： Masatoshi Oyama , Yoshiyuki Ohta , Tsuyoshi Yoshida , Hironobu Kawahara
发明人： Masatoshi Oyama , Yoshiyuki Ohta , Tsuyoshi Yoshida , Hironobu Kawahara
IPC分类号： B44C1/22
CPC分类号： H01J37/32082 , H01J37/32935 , H01J37/3299 , H01L21/31138 , H01L21/76802 , Y10S438/905 , Y10S438/907
摘要： For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.
摘要翻译：对于使用等离子体的表面处理装置，使用含氟气体和氧气的混合气体作为灰化气体。引入氧气和含氟气体的混合气体作为灰化气体。这允许同时执行以下步骤：去除掩模材料表面上残留的硅成分和包括固化掩模层等的区域中的掩模材料; 以及沉积在真空室的内壁上的碳基和硅基沉积物的去除。此外，在低压下进行掩模材料的除去，在随后的工序中，使用含氟气体和氧气的混合气体的工序，仅使用氧气的等离子体。结果，可以减少蚀刻后对膜层的损伤（蚀刻）。

9. 发明授权

US06960533B2 Method of processing a sample surface having a masking material and an anti-reflective film using a plasma 失效
标题翻译：使用等离子体处理具有掩模材料的样品表面和抗反射膜的方法
公开(公告)号：US06960533B2
公开(公告)日：2005-11-01
申请号：US10314283
申请日：2002-12-09
申请人： Koichi Nakaune , Masatoshi Oyama
发明人： Koichi Nakaune , Masatoshi Oyama
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/31144
摘要： A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor. In the surface processing apparatus, which uses a plasma, a deposition gas is added to a light element of hydrogen as the etching gas. Ions accelerated by a bias electric power supply accelerate etching reaction. Sputtering at edges of the mask can be reduced by using the light element of hydrogen as the etching gas, and the selective ratio of the anti-reflective film to the masking material can be increased by mixing the deposition gas with the hydrogen.
摘要翻译：提供表面处理装置。在该装置中，诸如抗反射膜的BARC的有机材料与形成图案的掩模的抗蚀剂，即选择比率的蚀刻速率比高，抗反射膜是用于形成在半导体的表面处理中具有高精度的图案。在使用等离子体的表面处理装置中，将沉积气体作为蚀刻气体添加到氢的轻元素中。通过偏置电源加速的离子加速蚀刻反应。可以通过使用氢的光元素作为蚀刻气体来减少掩模边缘的溅射，并且可以通过将沉积气体与氢气混合来增加抗反射膜与掩模材料的选择比。

10. 发明申请

US20050126711A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050126711A1
公开(公告)日：2005-06-16
申请号：US10764528
申请日：2004-01-27
申请人： Hideyuki Kazumi , Kenji Maeda , Tsuyoshi Yoshida , Masatoshi Oyama
发明人： Hideyuki Kazumi , Kenji Maeda , Tsuyoshi Yoshida , Masatoshi Oyama
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , C23F1/00 , C23F4/00 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma processing apparatus capable of extending a period of maintenance and continuing stable processing is provided. The apparatus comprises a vacuum reactor 1 having a processing gas introduction device and a evacuating device, a shield electrode 14 formed on the outer circumferential wall of the vacuum reactor, and a specimen placing device 101 having an antenna electrode 51 for radiating high frequency power into the vacuum reactor, in which first high frequency power is supplied to the antenna electrode, and high frequency power at a frequency lower than that of the first high frequency power is supplied to the antenna electrode 51 and the shield electrode 15.
摘要翻译：提供了能够延长维护期和持续稳定处理的等离子体处理装置。该装置包括具有处理气体引入装置和抽真空装置的真空反应器1，形成在真空反应堆的外周壁上的屏蔽电极14和具有用于将高频功率辐射的天线电极51的试样放置装置101 向天线电极供给第一高频电力的真空电抗器和低于第一高频功率的频率的高频电力被供给到天线电极51和屏蔽电极15。

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