专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07585776B2 Dry etching method of insulating film 失效
标题翻译：绝缘膜干蚀刻法
公开(公告)号：US07585776B2
公开(公告)日：2009-09-08
申请号：US11668057
申请日：2007-01-29
申请人： Nobuyuki Negishi , Masatoshi Oyama , Masahiro Sumiya
发明人： Nobuyuki Negishi , Masatoshi Oyama , Masahiro Sumiya
IPC分类号： H01L21/302
CPC分类号： H01L21/76816 , H01L21/31116 , H01L21/31144 , H01L28/40
摘要： It is an object to provide a high-precision method for forming deep holes of elliptic pattern, which can improve hole directionality on the short diameter side, the hole directionality being possibly deteriorated as a result of excessive polymer deposition in the initial etching stage. The insulating film dry etching method is for treating a work on which a mask of elliptic pattern is formed with a fluorocarbon gas, wherein the etching process is divided into a first and second steps after the etching is started, the first step operating to deposit a polymer at a rate set lower than that in the second step, and controlling step time in accordance with ellipticity (long diameter/short diameter ratio) of the elliptic pattern.
摘要翻译：本发明的目的是提供一种用于形成椭圆形深孔的高精度方法，其可以改善短径侧的孔方向性，由于在初始蚀刻阶段中聚合物沉积过多，孔方向性可能劣化。绝缘膜干式蚀刻方法是用碳氟化合物气体处理形成有椭圆图案掩模的工件，其中蚀刻工序在蚀刻开始后分为第一步骤和第二步骤，第一步操作以沉积聚合物，其速度设定为低于第二步骤，并且根据椭圆图案的椭圆率（长径/短径比）控制步骤时间。

2. 发明申请

US20080085605A1 DRY ETCHING METHOD OF INSULATING FILM 失效
标题翻译：绝缘膜干蚀刻方法
公开(公告)号：US20080085605A1
公开(公告)日：2008-04-10
申请号：US11668057
申请日：2007-01-29
申请人： Nobuyuki Negishi , Masatoshi Oyama , Masahiro Sumiya
发明人： Nobuyuki Negishi , Masatoshi Oyama , Masahiro Sumiya
IPC分类号： H01L21/461
CPC分类号： H01L21/76816 , H01L21/31116 , H01L21/31144 , H01L28/40
摘要： It is an object to provide a high-precision method for forming deep holes of elliptic pattern, which can improve hole directionality on the short diameter side, the hole directionality being possibly deteriorated as a result of excessive polymer deposition in the initial etching stage. The insulating film dry etching method is for treating a work on which a mask of elliptic pattern is formed with a fluorocarbon gas, wherein the etching process is divided into a first and second steps after the etching is started, the first step operating to deposit a polymer at a rate set lower than that in the second step, and controlling step time in accordance with ellipticity (long diameter/short diameter ratio) of the elliptic pattern.
摘要翻译：本发明的目的是提供一种用于形成椭圆形深孔的高精度方法，其可以改善短径侧的孔方向性，由于在初始蚀刻阶段中聚合物沉积过多，孔方向性可能劣化。绝缘膜干式蚀刻方法是用碳氟化合物气体处理形成有椭圆图案掩模的工件，其中蚀刻工序在蚀刻开始后分为第一步骤和第二步骤，第一步操作以沉积聚合物，其速度设定为低于第二步骤，并且根据椭圆图案的椭圆率（长径/短径比）控制步骤时间。

3. 发明申请

US20100297849A1 PLASMA ETCHING METHOD FOR ETCHING AN OBJECT 审中-公开
标题翻译：用于蚀刻对象的等离子体蚀刻方法
公开(公告)号：US20100297849A1
公开(公告)日：2010-11-25
申请号：US12512084
申请日：2009-07-30
申请人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
发明人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01L21/31144
摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.
摘要翻译：本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。

4. 发明授权

US06842658B2 Method of manufacturing a semiconductor device and manufacturing system 失效
标题翻译：制造半导体器件和制造系统的方法
公开(公告)号：US06842658B2
公开(公告)日：2005-01-11
申请号：US09791666
申请日：2001-02-26
申请人： Masaru Izawa , Masahito Mori , Nobuyuki Negishi , Shinichi Tachi
发明人： Masaru Izawa , Masahito Mori , Nobuyuki Negishi , Shinichi Tachi
IPC分类号： H01L21/302 , G05B19/418 , H01L21/00 , H01L21/02 , H01L21/3065 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/31288 , G05B2219/32053 , G05B2219/32198 , G05B2219/45031 , H01L21/67276 , Y02P90/14 , Y02P90/18 , Y02P90/20 , Y02P90/22 , Y02P90/26 , Y02P90/86
摘要： Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The computer equipped in semiconductor device fabrication equipment obtains the wafer processing and inspection results from a production line management computer in order to assist input of the process history. The computer in the fabrication equipment can be connected to computers in a fabrication equipment manufacturer on a communication network to automatically provide process conditions and maintenance schedule.
摘要翻译：将通过使用半导体器件制造设备中配备的计算机的数据库和过程建模，通过使用包括厚度和质量的晶片处理历史的输入来提供自动生成处理条件。配备在半导体器件制造设备中的计算机从生产线管理计算机获得晶片处理和检查结果，以帮助输入过程历史。制造设备中的计算机可以连接到通信网络上制造设备制造商中的计算机，以自动提供过程条件和维护计划。

5. 发明授权

US08747763B2 Plasma sterilization apparatus 有权
标题翻译：等离子灭菌装置
公开(公告)号：US08747763B2
公开(公告)日：2014-06-10
申请号：US13441026
申请日：2012-04-06
申请人： Takumi Tandou , Nobuyuki Negishi , Hiroyuki Kobayashi , Keizo Suzuki
发明人： Takumi Tandou , Nobuyuki Negishi , Hiroyuki Kobayashi , Keizo Suzuki
IPC分类号： B01J19/08
CPC分类号： A61L2/14 , H05H1/2406 , H05H2001/2425
摘要： In order to provide a plasma sterilization apparatus with high plasma generation efficiency, the apparatus includes first and second electrodes (3, 2), a first dielectric body layer (1), and an insulating spacer (6). The first dielectric body layer (1) is disposed between the first and second electrodes (3, 2). The insulating spacer (6) is disposed between the first electrode (3) and the first dielectric body layer (1). The insulating spacer (6) has a lower permittivity than a permittivity of the first dielectric body layer (1).
摘要翻译：为了提供具有高等离子体产生效率的等离子体灭菌装置，该装置包括第一和第二电极（3,2），第一介电体层（1）和绝缘间隔物（6）。第一电介质体层（1）设置在第一和第二电极（3,2）之间。绝缘间隔物（6）设置在第一电极（3）和第一介电体层（1）之间。绝缘间隔物（6）的介电常数比第一绝缘体层（1）的介电常数低。

6. 发明授权

US06645870B2 Process for fabricating semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US06645870B2
公开(公告)日：2003-11-11
申请号：US09928500
申请日：2001-08-14
申请人： Nobuyuki Negishi , Masaru Izawa
发明人： Nobuyuki Negishi , Masaru Izawa
IPC分类号： H01L2100
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76897 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high resistivity layer in the formation of a contact hole, thereby reducing a contact resistance. The contact hole is formed in an etching step of reducing ion energy and an oxygen flow rate as an etching depth progresses, thereby suppressing the damage layer formed on the base. The reduction of the contact resistance is achieved by using a step of removing the high resistivity layer using hydrogen or a hydrogen-containing gas plasma.
摘要翻译：公开了一种半导体器件的制造方法，其有效地抑制形成在基底硅基板或互连层上的损伤层，并且在形成接触孔时去除高电阻率层，从而降低接触电阻。在蚀刻深度进行时，以减少离子能量和氧气流量的蚀刻工序形成接触孔，由此抑制形成在基材上的损伤层。通过使用氢或含氢气体等离子体去除高电阻率层的步骤来实现接触电阻的降低。

7. 发明申请

US20120263628A1 Plasma Sterilization Apparatus 有权
标题翻译：等离子灭菌装置
公开(公告)号：US20120263628A1
公开(公告)日：2012-10-18
申请号：US13441026
申请日：2012-04-06
申请人： Takumi TANDOU , Nobuyuki Negishi , Hiroyuki Kobayashi , Keizo Suzuki
发明人： Takumi TANDOU , Nobuyuki Negishi , Hiroyuki Kobayashi , Keizo Suzuki
IPC分类号： A61L9/015
CPC分类号： A61L2/14 , H05H1/2406 , H05H2001/2425
摘要： In order to provide a plasma sterilization apparatus with high plasma generation efficiency, the apparatus includes first and second electrodes (3, 2), a first dielectric body layer (1), and an insulating spacer (6). The first dielectric body layer (1) is disposed between the first and second electrodes (3, 2). The insulating spacer (6) is disposed between the first electrode (3) and the first dielectric body layer (1). The insulating spacer (6) has a lower permittivity than a permittivity of the first dielectric body layer (1).
摘要翻译：为了提供具有高等离子体产生效率的等离子体灭菌装置，该装置包括第一和第二电极（3,2），第一介电体层（1）和绝缘间隔物（6）。第一介电体层（1）设置在第一和第二电极（3,2）之间。绝缘间隔物（6）设置在第一电极（3）和第一介电体层（1）之间。绝缘间隔物（6）的介电常数比第一绝缘体层（1）的介电常数低。

8. 发明授权

US07372582B2 Method for fabrication semiconductor device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US07372582B2
公开(公告)日：2008-05-13
申请号：US10531700
申请日：2002-10-18
申请人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
发明人： Nobuyuki Negishi , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： G01B11/14
CPC分类号： H01J37/32935 , H01J37/32091 , H01L21/31116 , H01L21/76802 , H01L22/12
摘要： The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber 1, a susceptor 7 arranged in the vacuum chamber 1 to place a wafer 8, a gas introducing means 2 to introduce the material gas into the vacuum chamber and a high-frequency power introducing means 6. The gas introduced into the vacuum chamber by the gas introducing means 2 is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film 23 of a main wafer surface in a plasma atmosphere. In the hole forming step, light 15 having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.
摘要翻译：本发明的目的是提供一种制造其产率和生产率提高的半导体器件的方法。在根据本发明的半导体器件的制造方法中，制备等离子体蚀刻系统，其包括真空室1，设置在真空室1中的基座7以放置晶片8，气体引入装置2将材料气体进入真空室和高频电力引入装置6。通过气体引入装置2引入真空室的气体通过高频电力转换为等离子体，并且在等离子体气氛中的主晶片表面的氧化物膜23中选择性地形成多个孔。在孔形成步骤中，将具有连续光谱的光15照射在半导体晶片的主表面的平坦部分和孔部分上，从而测量平坦部分和孔部分中的反射率变化。

9. 发明授权

US07371690B2 Dry etching method and apparatus 失效
标题翻译：干蚀刻方法和设备
公开(公告)号：US07371690B2
公开(公告)日：2008-05-13
申请号：US10924983
申请日：2004-08-25
申请人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
发明人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/0276 , H01L21/0275 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.
摘要翻译：将不使用Ar作为等离子气体的条件用于有机防反射涂层的加工，其抑制飞溅效应并降低抗蚀剂中C-H和OC-O键的裂解。结果，可以抑制加工抗反射涂层后的抗蚀剂的粗糙度，并且可以防止在处理下一个被加工膜（即绝缘膜）之后的点蚀和条纹。对于在加工绝缘膜时使用的稀有气体，施加Xe，Kr，Ar和Xe的混合气体以及Ar和Kr的混合气体代替Ar，导致还原蚀刻后的点蚀和条纹。此外，通过进行抗蚀剂修饰和轮匝蚀刻，可以提供具有较小临界尺寸偏移和装置成本和生产率两者优异的干蚀刻方法。

10. 发明申请

US20050048787A1 Dry etching method and apparatus 失效
标题翻译：干蚀刻方法和设备
公开(公告)号：US20050048787A1
公开(公告)日：2005-03-03
申请号：US10924983
申请日：2004-08-25
申请人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
发明人： Nobuyuki Negishi , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： G03F7/11 , G03F7/40 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/0276 , H01L21/0275 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.
摘要翻译：将不使用Ar作为等离子气体的条件用于有机防反射涂层的加工，其抑制飞溅效应并降低抗蚀剂中C-H和OC-O键的裂解。结果，可以抑制加工抗反射涂层后的抗蚀剂的粗糙度，并且可以防止在处理下一个被加工膜（即绝缘膜）之后的点蚀和条纹。对于在加工绝缘膜时使用的稀有气体，施加Xe，Kr，Ar和Xe的混合气体以及Ar和Kr的混合气体代替Ar，导致还原蚀刻后的点蚀和条纹。此外，通过进行抗蚀剂修饰和轮匝蚀刻，可以提供具有较小临界尺寸偏移和装置成本和生产率两者优异的干蚀刻方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式