专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100297849A1 PLASMA ETCHING METHOD FOR ETCHING AN OBJECT 审中-公开
标题翻译：用于蚀刻对象的等离子体蚀刻方法
公开(公告)号：US20100297849A1
公开(公告)日：2010-11-25
申请号：US12512084
申请日：2009-07-30
申请人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
发明人： Masatoshi Miyake , Nobuyuki Negishi , Masatoshi Oyama , Tadamitsu Kanekiyo , Masaru Izawa
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01L21/31144
摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.
摘要翻译：本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。

2. 发明授权

US08397668B2 Plasma processing apparatus 有权
公开(公告)号：US08397668B2
公开(公告)日：2013-03-19
申请号：US12398226
申请日：2009-03-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

3. 发明授权

US07662232B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07662232B2
公开(公告)日：2010-02-16
申请号：US11730962
申请日：2007-04-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/00 , B65B1/04
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性同时保持工艺深度的面内均匀性。

4. 发明申请

US20060236932A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060236932A1
公开(公告)日：2006-10-26
申请号：US11201243
申请日：2005-08-11
申请人： Kenetsu Yokogawa , Kenji Maeda , Hiroyuki Kobayashi , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Kenetsu Yokogawa , Kenji Maeda , Hiroyuki Kobayashi , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32633 , H01J37/321 , H01J37/32623 , H01L21/67069
摘要： The invention provides a plasma processing apparatus capable of preventing the production of particle and preventing the influence of particle on the sample. The plasma processing apparatus comprises a vacuum chamber; process gas introducing means for introducing process gas into the vacuum chamber; means, coupled to a first RF power supply, for applying RF energy to the process gas introduced into the vacuum chamber to turn the process gas into plasma; a sample mounting electrode for mounting a sample on an upper surface thereof and holding the sample in the vacuum chamber; evacuation means for evacuating the process gas in the vacuum chamber; and plasma confining means, provided on a peripheral side of the mounting electrode in the vacuum chamber, for inflecting flow of the process gas caused by the evacuation means on a downstream side of a sample mounting surface of the mounting electrode to prevent plasma from diffusing downstream of the sample mounting surface.
摘要翻译：本发明提供一种等离子体处理装置，其能够防止颗粒的产生并防止颗粒对样品的影响。等离子体处理装置包括真空室; 处理气体引入装置，用于将处理气体引入真空室; 装置，耦合到第一RF电源，用于将RF能量施加到引入到真空室中的工艺气体，以将工艺气体转化为等离子体; 用于将样品安装在其上表面并将样品保持在真空室中的样品安装电极; 用于抽真空室中的处理气体的排气装置; 以及设置在真空室中的安装电极的周边侧的等离子体限制装置，用于使由排气装置产生的处理气体的流动在安装电极的样品安装表面的下游侧流动，以防止等离子体向下游扩散的样品安装面。

5. 发明授权

US08733282B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08733282B2
公开(公告)日：2014-05-27
申请号：US13829676
申请日：2013-03-14
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性同时保持工艺深度的面内均匀性。

6. 发明申请

US20090194235A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090194235A1
公开(公告)日：2009-08-06
申请号：US12398226
申请日：2009-03-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： H01L21/306
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性同时保持工艺深度的面内均匀性。

7. 发明申请

US20070186972A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20070186972A1
公开(公告)日：2007-08-16
申请号：US11730962
申请日：2007-04-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： B08B7/00 , G01L21/30 , H01L21/302
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of 02 or N2are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中至少两种具有不同组成比的O 2或N 2 N的处理气体被引入到处理室通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。

8. 发明申请

US20060016559A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060016559A1
公开(公告)日：2006-01-26
申请号：US10911610
申请日：2004-08-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中具有不同组成比的O 2或N 2 2的至少两种处理气体被引入到处理室通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。

9. 发明授权

US06645870B2 Process for fabricating semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US06645870B2
公开(公告)日：2003-11-11
申请号：US09928500
申请日：2001-08-14
申请人： Nobuyuki Negishi , Masaru Izawa
发明人： Nobuyuki Negishi , Masaru Izawa
IPC分类号： H01L2100
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76897 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high resistivity layer in the formation of a contact hole, thereby reducing a contact resistance. The contact hole is formed in an etching step of reducing ion energy and an oxygen flow rate as an etching depth progresses, thereby suppressing the damage layer formed on the base. The reduction of the contact resistance is achieved by using a step of removing the high resistivity layer using hydrogen or a hydrogen-containing gas plasma.
摘要翻译：公开了一种半导体器件的制造方法，其有效地抑制形成在基底硅基板或互连层上的损伤层，并且在形成接触孔时去除高电阻率层，从而降低接触电阻。在蚀刻深度进行时，以减少离子能量和氧气流量的蚀刻工序形成接触孔，由此抑制形成在基材上的损伤层。通过使用氢或含氢气体等离子体去除高电阻率层的步骤来实现接触电阻的降低。

10. 发明申请

US20100025369A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100025369A1
公开(公告)日：2010-02-04
申请号：US12202642
申请日：2008-09-02
申请人： Nobuyuki NEGISHI , Masaru Izawa , Kenji Maeda
发明人： Nobuyuki NEGISHI , Masaru Izawa , Kenji Maeda
IPC分类号： G01L11/02
CPC分类号： H01J37/32642 , H01J37/32935 , H01J37/3299
摘要： To monitor the thickness of a focus ring consumed during wafer processing. A plasma processing apparatus includes a vacuum chamber 1, workpiece mounting means 5, high frequency electric power introducing means 4 and radio-frequency bias electric power introducing means 7 and processes a surface of a workpiece 6 using a plasma that is converted from a gas introduced into the vacuum chamber 1 by the action of a high frequency electric power introduced by the high frequency electric power introducing means 4. The plasma processing apparatus further includes an annular member 11 surrounding the workpiece 6 mounted on the workpiece mounting means 5, and a pair of tubes having an aspect ratio of 3 or higher and disposed on a side wall of the vacuum chamber 1 to face each other. Each tube is vacuum-sealed at a tip end thereof with a glass material. One of the tubes has a light source 15 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material, and the other tube has light receiving means 16 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material. The light receiving means 16 receives light passing across the surface of the annular member 11.
摘要翻译：监视在晶片处理期间消耗的聚焦环的厚度。等离子体处理装置包括真空室1，工件安装装置5，高频电力引入装置4和射频偏置电力引入装置7，并使用从引入的气体转换的等离子体处理工件6的表面通过高频电力引入装置4引入的高频电力进入真空室1.等离子体处理装置还包括环绕安装在工件安装装置5上的工件6的环形构件11和一对的长径比为3或更高并且设置在真空室1的侧壁上以彼此面对的管。每个管在其末端用玻璃材料进行真空密封。其中一个管具有面向玻璃材料的气氛侧的真空室的内部设置的光源15，另一个管具有光接收装置16，该接收装置16面对真空室的大气侧的内部玻璃材料。光接收装置16接收穿过环形构件11的表面的光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式